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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Prabhakara, V.; Nuytten, T.; Bender, H.; Vandervorst, W.; Bals, S.; Verbeeck, J. |
Linearized radially polarized light for improved precision in strain measurements using micro-Raman spectroscopy |
2021 |
Optics Express |
29 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Prabhakara, V.; Jannis, D.; Guzzinati, G.; Béché, A.; Bender, H.; Verbeeck, J. |
HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale |
2020 |
Ultramicroscopy |
219 |
4 |
UA library record; WoS full record; WoS citing articles |
|
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Mehta, A.N.; Gauquelin, N.; Nord, M.; Orekhov, A.; Bender, H.; Cerbu, D.; Verbeeck, J.; Vandervorst, W. |
Unravelling stacking order in epitaxial bilayer MX₂ using 4D-STEM with unsupervised learning |
2020 |
Nanotechnology |
31 |
13 |
UA library record; WoS full record; WoS citing articles |
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Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. |
Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice |
2020 |
Journal Of Physical Chemistry C |
124 |
2 |
UA library record; WoS full record; WoS citing articles |
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Prabhakara, V.; Jannis, D.; Béché, A.; Bender, H.; Verbeeck, J. |
Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique |
2019 |
Semiconductor science and technology |
|
8 |
UA library record; WoS full record; WoS citing articles |
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Vereecke, G.; De Coster, H.; Van Alphen, S.; Carolan, P.; Bender, H.; Willems, K.; Ragnarsson, L.-A.; Van Dorpe, P.; Horiguchi, N.; Holsteyns, F. |
Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors |
2018 |
Microelectronic engineering |
200 |
|
UA library record; WoS full record; WoS citing articles |
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Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. |
Structural characterization of SnS crystals formed by chemical vapour deposition |
2017 |
Journal of microscopy
T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND |
268 |
2 |
UA library record; WoS full record; WoS citing articles |
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Heyne, M.H.; Chiappe, D.; Meersschaut, J.; Nuytten, T.; Conard, T.; Bender, H.; Huyghebaert, C.; Radu, I.P.; Caymax, M.; de Marneffe, J.F.; Neyts, E.C.; De Gendt, S.; |
Multilayer MoS2 growth by metal and metal oxide sulfurization |
2016 |
Journal of materials chemistry C : materials for optical and electronic devices |
4 |
|
UA library record; WoS full record; WoS citing articles |
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Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. |
Compositional characterization of nickel silicides by HAADF-STEM imaging |
2011 |
Journal of materials science |
46 |
1 |
UA library record; WoS full record; WoS citing articles |
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Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. |
Characterization of nickel silicides using EELS-based methods |
2010 |
Journal of microscopy |
240 |
11 |
UA library record; WoS full record; WoS citing articles |
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Ke, X.; Bals, S.; Cott, D.; Hantschel, T.; Bender, H.; Van Tendeloo, G. |
Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts |
2010 |
Microscopy and microanalysis |
16 |
42 |
UA library record; WoS full record; WoS citing articles |
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Ke, X.; Bals, S.; Romo Negreira, A.; Hantschel, T.; Bender, H.; Van Tendeloo, G. |
TEM sample preparation by FIB for carbon nanotube interconnects |
2009 |
Ultramicroscopy |
109 |
21 |
UA library record; WoS full record; WoS citing articles |
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Ghica, C.; Nistor, L.C.; Bender, H.; Richard, O.; Van Tendeloo, G.; Ulyashin, A. |
TEM characterization of extended defects induced in Si wafers by H-plasma treatment |
2007 |
Journal of physics: D: applied physics |
40 |
10 |
UA library record; WoS full record; WoS citing articles |
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Ghica, C.; Nistor, L.C.; Bender, H.; Richard, O.; Van Tendeloo, G.; Ulyashin, A.; |
Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments |
2006 |
Philosophical magazine |
86 |
12 |
UA library record; WoS full record; WoS citing articles |
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Nistor, L.C.; Richard, O.; Zhao, C.; Bender, H.; Van Tendeloo, G. |
Thermal stability of atomic layer deposited Zr:Al mixed oxide thin films: an in situ transmission electron microscopy study |
2005 |
Journal of materials research |
20 |
|
UA library record; WoS full record |
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Shimizu, K.; Habazaki, H.; Bender, H.; Gijbels, R. |
The dawn of surface analysis that stands by the side users: ultra-thin film analysis by rf-GDOES |
2004 |
Engineering materials |
52 |
|
UA library record |
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Nistor, L.C.; Richard, O.; Zhao, O.; Bender, H.; Stesmans, A.; Van Tendeloo, G. |
A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films |
2003 |
Institute of physics conference series
T2 – Microscopy of semiconducting materials |
|
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UA library record; WoS full record; |
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Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. |
Reliability of copper dual damascene influenced by pre-clean |
2002 |
Analysis Of Integrated Circuits |
|
5 |
UA library record; WoS full record; WoS citing articles |
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Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates |
2001 |
Journal of materials research |
16 |
4 |
UA library record; WoS full record; WoS citing articles |
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Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. |
The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures |
2001 |
Materials science in semiconductor processing |
4 |
6 |
UA library record; WoS full record; WoS citing articles |
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Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. |
Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy |
2001 |
Materials science in semiconductor processing |
4 |
|
UA library record; WoS full record |
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Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. |
In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines |
2001 |
Journal of applied physics |
90 |
97 |
UA library record; WoS full record; WoS citing articles |
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Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. |
Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures |
2001 |
Journal of the electrochemical society |
148 |
13 |
UA library record; WoS full record; WoS citing articles |
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Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. |
Stress analysis with convergent beam electron diffraction around NMOS transistors |
2001 |
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UA library record; WoS full record; |
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Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. |
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation |
2001 |
Institute of physics conference series |
|
|
UA library record; WoS full record; |
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Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. |
HREM investigation of a Fe/GaN/Fe tunnel junction |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England |
|
|
UA library record; WoS full record; |
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Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. |
Quantitative EFTEM study of germanium quantum dots |
2001 |
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UA library record; WoS full record; |
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Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. |
EFTEM study of plasma etched low-k Si-O-C dielectrics |
2001 |
Institute of physics conference series
T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND |
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UA library record; WoS full record; |
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Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. |
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer |
2000 |
Applied physics letters |
77 |
44 |
UA library record; WoS full record; WoS citing articles |
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Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Interaction of a Ti-capped Co thin film with Si3N4 |
2000 |
Applied physics letters |
77 |
3 |
UA library record; WoS full record; WoS citing articles |
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