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Author Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. pdf  doi
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  Title The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures Type A1 Journal article
  Year (down) 2001 Publication Materials science in semiconductor processing Abbreviated Journal Mat Sci Semicon Proc  
  Volume 4 Issue 1/3 Pages 117-119  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Shallow trench isolation (STI) is a promising technology for the isolation structures of the new generation of ULSI devices with dimensions below 0.18 mum. The various processing steps cause stress fields in STI structures, which can lead to defect formation in the silicon substrate. In their turn, stress fields affect the electrical parameters and the reliability of devices. Convergent beam electron diffraction (CBED) is used in this study to examine the influence of a wet and a dry pre-gate oxidation on the stress distribution around STI structures. The measurements are performed on STI structures with different width and spacing. CBED analysis is compared with bright-field TEM images. Defects are observed in high-strain areas of small isolated structures. (C) 2001 Elsevier Science Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language Wos 000167727200028 Publication Date 2002-10-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1369-8001; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.359 Times cited 6 Open Access  
  Notes Approved Most recent IF: 2.359; 2001 IF: 0.419  
  Call Number UA @ lucian @ c:irua:94968 Serial 3602  
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