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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Prabhakara, V.; Nuytten, T.; Bender, H.; Vandervorst, W.; Bals, S.; Verbeeck, J. Linearized radially polarized light for improved precision in strain measurements using micro-Raman spectroscopy 2021 Optics Express 29 2 UA library record; WoS full record; WoS citing articles pdf url doi
Prabhakara, V.; Jannis, D.; Guzzinati, G.; Béché, A.; Bender, H.; Verbeeck, J. HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale 2020 Ultramicroscopy 219 4 UA library record; WoS full record; WoS citing articles url doi
Mehta, A.N.; Gauquelin, N.; Nord, M.; Orekhov, A.; Bender, H.; Cerbu, D.; Verbeeck, J.; Vandervorst, W. Unravelling stacking order in epitaxial bilayer MX₂ using 4D-STEM with unsupervised learning 2020 Nanotechnology 31 13 UA library record; WoS full record; WoS citing articles pdf url doi
Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice 2020 Journal Of Physical Chemistry C 124 2 UA library record; WoS full record; WoS citing articles pdf doi
Prabhakara, V.; Jannis, D.; Béché, A.; Bender, H.; Verbeeck, J. Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique 2019 Semiconductor science and technology 8 UA library record; WoS full record; WoS citing articles url doi
Vereecke, G.; De Coster, H.; Van Alphen, S.; Carolan, P.; Bender, H.; Willems, K.; Ragnarsson, L.-A.; Van Dorpe, P.; Horiguchi, N.; Holsteyns, F. Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors 2018 Microelectronic engineering 200 UA library record; WoS full record; WoS citing articles pdf doi
Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. Structural characterization of SnS crystals formed by chemical vapour deposition 2017 Journal of microscopy T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND 268 2 UA library record; WoS full record; WoS citing articles pdf doi
Heyne, M.H.; Chiappe, D.; Meersschaut, J.; Nuytten, T.; Conard, T.; Bender, H.; Huyghebaert, C.; Radu, I.P.; Caymax, M.; de Marneffe, J.F.; Neyts, E.C.; De Gendt, S.; Multilayer MoS2 growth by metal and metal oxide sulfurization 2016 Journal of materials chemistry C : materials for optical and electronic devices 4 UA library record; WoS full record; WoS citing articles doi
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. Compositional characterization of nickel silicides by HAADF-STEM imaging 2011 Journal of materials science 46 1 UA library record; WoS full record; WoS citing articles doi
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. Characterization of nickel silicides using EELS-based methods 2010 Journal of microscopy 240 11 UA library record; WoS full record; WoS citing articles doi
Ke, X.; Bals, S.; Cott, D.; Hantschel, T.; Bender, H.; Van Tendeloo, G. Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts 2010 Microscopy and microanalysis 16 42 UA library record; WoS full record; WoS citing articles doi
Ke, X.; Bals, S.; Romo Negreira, A.; Hantschel, T.; Bender, H.; Van Tendeloo, G. TEM sample preparation by FIB for carbon nanotube interconnects 2009 Ultramicroscopy 109 21 UA library record; WoS full record; WoS citing articles pdf doi
Ghica, C.; Nistor, L.C.; Bender, H.; Richard, O.; Van Tendeloo, G.; Ulyashin, A. TEM characterization of extended defects induced in Si wafers by H-plasma treatment 2007 Journal of physics: D: applied physics 40 10 UA library record; WoS full record; WoS citing articles pdf doi
Ghica, C.; Nistor, L.C.; Bender, H.; Richard, O.; Van Tendeloo, G.; Ulyashin, A.; Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments 2006 Philosophical magazine 86 12 UA library record; WoS full record; WoS citing articles pdf doi
Nistor, L.C.; Richard, O.; Zhao, C.; Bender, H.; Van Tendeloo, G. Thermal stability of atomic layer deposited Zr:Al mixed oxide thin films: an in situ transmission electron microscopy study 2005 Journal of materials research 20 UA library record; WoS full record doi
Shimizu, K.; Habazaki, H.; Bender, H.; Gijbels, R. The dawn of surface analysis that stands by the side users: ultra-thin film analysis by rf-GDOES 2004 Engineering materials 52 UA library record
Nistor, L.C.; Richard, O.; Zhao, O.; Bender, H.; Stesmans, A.; Van Tendeloo, G. A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films 2003 Institute of physics conference series T2 – Microscopy of semiconducting materials UA library record; WoS full record;
Tokei, Z.; Lanckmans, F.; van den Bosch, G.; Van Hove, M.; Maex, K.; Bender, H.; Hens, S.; van Landuyt, J. Reliability of copper dual damascene influenced by pre-clean 2002 Analysis Of Integrated Circuits 5 UA library record; WoS full record; WoS citing articles doi
Ghica, C.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. In situ transmission electron microscopy study of the silicidation process in Co thin films on patterned (001) Si substrates 2001 Journal of materials research 16 4 UA library record; WoS full record; WoS citing articles doi
Stuer, C.; van Landuyt, J.; Bender, H.; Rooyackers, R.; Badenes, G. The use of convergent beam electron diffraction for stress measurements in shallow trench isolation structures 2001 Materials science in semiconductor processing 4 6 UA library record; WoS full record; WoS citing articles pdf doi
Hens, S.; van Landuyt, J.; Bender, H.; Boullart, W.; Vanhaelemeersch, S. Chemical and structural analysis of etching residue layers in semiconductor devices with energy filtering transmission electron microscopy 2001 Materials science in semiconductor processing 4 UA library record; WoS full record pdf doi
Stuer, C.; van Landuyt, J.; Bender, H.; de Wolf, I.; Rooyackers, R.; Badenes, G. Investigation by convergent beam electron diffraction of the stress around shallow trench isolation structures 2001 Journal of the electrochemical society 148 13 UA library record; WoS full record; WoS citing articles pdf doi
Teodorescu, V.; Nistor, L.; Bender, H.; Steegen, A.; Lauwers, A.; Maex, K.; van Landuyt, J. In situ transmission electron microscopy study of Ni silicide phases formed on (001) Si active lines 2001 Journal of applied physics 90 97 UA library record; WoS full record; WoS citing articles pdf doi
Stuer, G.; Bender, H.; van Landuyt, J.; Eyben, P. Stress analysis with convergent beam electron diffraction around NMOS transistors 2001 UA library record; WoS full record;
Hens, S.; Stuer, C.; Bender, H.; Loo, R.; van Landuyt, J. Quantitative EFTEM study of germanium quantum dots 2001 UA library record; WoS full record;
Nistor, L.; Bender, H.; van Landuyt, J.; Nemeth, S.; Boeve, H.; De Boeck, J.; Borghs, G. HREM investigation of a Fe/GaN/Fe tunnel junction 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England UA library record; WoS full record;
Hens, S.; Bender, H.; Donaton, R.A.; Maex, K.; Vanhaelemeersch, S.; van Landuyt, J. EFTEM study of plasma etched low-k Si-O-C dielectrics 2001 Institute of physics conference series T2 – Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND UA library record; WoS full record;
Stuer, C.; Steegen, A.; van Landuyt, J.; Bender, H.; Maex, K. Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation 2001 Institute of physics conference series UA library record; WoS full record;
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. Interaction of a Ti-capped Co thin film with Si3N4 2000 Applied physics letters 77 3 UA library record; WoS full record; WoS citing articles pdf doi
Nistor, L.; Bender, H.; Vantomme, A.; Wu, M.F.; van Landuyt, J.; O'Donnell, K.P.; Martin, R.; Jacobs, K.; Moerman, I. Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer 2000 Applied physics letters 77 44 UA library record; WoS full record; WoS citing articles pdf doi
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