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Author Jones, L.; Martinez, G.T.; Béché, A.; Van Aert, S.; Nellist, P.D. doi  openurl
  Title Getting the best from an imperfect detector : an alternative normalisation procedure for quantitative HAADF STEM Type A1 Journal article
  Year 2014 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal  
  Volume 20 Issue S3 Pages 126-127  
  Keywords A1 Journal article; Engineering Management (ENM); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge, Mass. Editor  
  Language Wos Publication Date 2014-08-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1431-9276 ISBN Additional Links UA library record  
  Impact Factor 1.891 Times cited (up) Open Access  
  Notes Approved Most recent IF: 1.891; 2014 IF: 1.877  
  Call Number UA @ lucian @ c:irua:136445 Serial 4500  
Permanent link to this record
 

 
Author de Backer, A.; De wael, A.; Gonnissen, J.; Martinez, G.T.; Béché, A.; MacArthur, K.E.; Jones, L.; Nellist, P.D.; Van Aert, S. url  doi
openurl 
  Title Quantitative annular dark field scanning transmission electron microscopy for nanoparticle atom-counting : what are the limits? Type A1 Journal article
  Year 2015 Publication Journal of physics : conference series Abbreviated Journal  
  Volume 644 Issue Pages 012034-4  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Quantitative atomic resolution annular dark field scanning transmission electron microscopy (ADF STEM) has become a powerful technique for nanoparticle atom-counting. However, a lot of nanoparticles provide a severe characterisation challenge because of their limited size and beam sensitivity. Therefore, quantitative ADF STEM may greatly benefit from statistical detection theory in order to optimise the instrumental microscope settings such that the incoming electron dose can be kept as low as possible whilst still retaining single-atom precision. The principles of detection theory are used to quantify the probability of error for atom-counting. This enables us to decide between different image performance measures and to optimise the experimental detector settings for atom-counting in ADF STEM in an objective manner. To demonstrate this, ADF STEM imaging of an industrial catalyst has been conducted using the near-optimal detector settings. For this experiment, we discussed the limits for atomcounting diagnosed by combining a thorough statistical method and detailed image simulations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Bristol Editor  
  Language Wos Publication Date  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588; 1742-6596 ISBN Additional Links UA library record  
  Impact Factor Times cited (up) Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:129198 Serial 4506  
Permanent link to this record
 

 
Author Guzzinati, G.; Ghielens, W.; Mahr, C.; Béché, A.; Rosenauer, A.; Calders, T.; Verbeeck, J. doi  openurl
  Title Electron Bessel beam diffraction patterns, line scan of Si/SiGe multilayer Type Dataset
  Year 2019 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords Dataset; ADReM Data Lab (ADReM); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ admin @ c:irua:169114 Serial 6865  
Permanent link to this record
 

 
Author Guzzinati, G.; Béché, A.; McGrouther, D.; Verbeeck, J. doi  openurl
  Title Rotation of electron beams in the presence of localised, longitudinal magnetic fields Type Dataset
  Year 2019 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords Dataset; Electron microscopy for materials research (EMAT)  
  Abstract Electron Bessel beams have been generated by inserting an annular aperture in the illumination system of a TEM. These beams have passed through a localised magnetic field. As a result a low amount of image rotation (which is expected to be proportional to the longitudinal component of the magnetic field) is observed in the far field. A measure of this rotation should give access to the magneti field. The two datasets have been acquired in a FEI Titan3 microscope, operated at 300kV. The file focalseries.tif contains a series of images acquired varying the magnetic field through the objective lens. The file lineprofile.ser contains a series of images acquired by scanning the beam over a sample with several magnetised nanopillars. For reference, check the associated publication.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ admin @ c:irua:169135 Serial 6883  
Permanent link to this record
 

 
Author Jannis, D.; Müller-Caspary, K.; Béché, A.; Oelsner, A.; Verbeeck, J. doi  openurl
  Title Spectrocopic coincidence experiment in transmission electron microscopy Type Dataset
  Year 2019 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords Dataset; Electron microscopy for materials research (EMAT)  
  Abstract This dataset contains individual EEL and EDX events where for every event (electron or X-ray), their energy and time of arrival is stored. The experiment was performed in a transmission electron microscope (Tecnai Osiris) at 200 keV. The material investigated is an Al-Mg-Si-Cu alloy. The 'full_dataset.mat' contains the full dataset and the 'subset.mat' has the first five frames of the full dataset. The attached 'EELS-EDX.ipynb' is a jupyter notebook file. This file describes the data processing in order to observe the temporal correlation between the electrons and X-rays.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Additional Links UA library record  
  Impact Factor Times cited (up) Open Access  
  Notes Approved no  
  Call Number UA @ admin @ c:irua:169112 Serial 6888  
Permanent link to this record
 

 
Author De Backer, A.; De Wael, A.; Gonnissen, J.; Martinez, G.T.; Béché, A.; MacArthur, K.E.; Jones, L.; Nellist, P.D.; Van Aert, S. pdf  url
doi  openurl
  Title Quantitative annular dark field scanning transmission electron microscopy for nanoparticle atom-counting: What are the limits? Type P1 Proceeding
  Year 2015 Publication Journal of physics : conference series Abbreviated Journal  
  Volume 644 Issue 644 Pages 012034  
  Keywords P1 Proceeding; Electron microscopy for materials research (EMAT)  
  Abstract Quantitative atomic resolution annular dark field scanning transmission electron microscopy (ADF STEM) has become a powerful technique for nanoparticle atom-counting. However, a lot of nanoparticles provide a severe characterisation challenge because of their limited size and beam sensitivity. Therefore, quantitative ADF STEM may greatly benefit from statistical detection theory in order to optimise the instrumental microscope settings such that the incoming electron dose can be kept as low as possible whilst still retaining single-atom precision. The principles of detection theory are used to quantify the probability of error for atom-counting. This enables us to decide between different image performance measures and to optimise the experimental detector settings for atom-counting in ADF STEM in an objective manner. To demonstrate this, ADF STEM imaging of an industrial catalyst has been conducted using the near-optimal detector settings. For this experiment, we discussed the limits for atom-counting diagnosed by combining a thorough statistical method and detailed image simulations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000366826200034 Publication Date 2015-10-13  
  Series Editor Series Title Abbreviated Series Title Electron Microscopy and Analysis Group Conference (EMAG), JUN 02-JUL 02, 2015, Manchester, ENGLAND  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Additional Links UA library record; WoS full record  
  Impact Factor Times cited (up) Open Access  
  Notes The authors acknowledge financial support from the Research Foundation Flanders (FWO, Belgium) through project funding (G.0368.15N, G.0369.15N, and G.0374.15N) and a PhD research grant to A De Backer. The research leading to these results has received funding from the European Union Seventh Framework Programme under Grant Agreement 312483 – ESTEEM2 (Integrated Infrastructure Initiative-I3), ERC Starting Grant 278510 Vortex, and the UK Engineering and Physical Sciences Research Council (EP/K032518/1). The authors acknowledge Johnson-Matthey for providing the sample and PhD funding to K E MacArthur. A Rosenauer is acknowledged for providing the STEMsim program.; esteem2jra2; ECASJO; Approved Most recent IF: NA  
  Call Number c:irua:130314 c:irua:130314 Serial 4050  
Permanent link to this record
 

 
Author Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. pdf  doi
openurl 
  Title The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography Type A1 Journal article
  Year 2011 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume 26 Issue 12 Pages 1-10  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Si/Si(1 − x − y)GexCy superlattices are used in the construction of new microelectronic architectures such as multichannel transistors. The introduction of carbon in SiGe allows for compensation of the strain and to avoid plastic relaxation. However, the formation of incoherent β-SiC clusters during annealing limits the processability of SiGeC. This precipitation leads to a modification of the strain in the alloy due to the reduction of the substitutional carbon content. Here, we investigated the strain in annealed Si/Si0.744Ge0.244C0.012 superlattices grown by reduced pressure chemical vapour deposition using dark-field electron holography. The variation of the substitutional C content was calculated by correlating the results with finite-element simulations. The obtained values were then compared with Fourier-transformed infrared spectrometry measurements. It was shown that after annealing for 2 min at 1050 °C carbon no longer has any influence on strain in the superlattice, which behaves like pure SiGe. However, a significant proportion of substitutional C atoms remain in a third-nearest neighbour (3nn) configuration. It was deduced that the influence of 3nn C on strain is negligible and that only isolated atoms have a significant contribution. It was also proposed that the 3nn configuration is an intermediary step during the formation of SiC clusters.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000300151300010 Publication Date 2011-11-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.305 Times cited (up) Open Access  
  Notes Approved Most recent IF: 2.305; 2011 IF: 1.723  
  Call Number UA @ lucian @ c:irua:136427 Serial 4508  
Permanent link to this record
 

 
Author Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L. doi  openurl
  Title Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy Type A1 Journal article
  Year 2012 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 100 Issue Pages 233121  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The strain in pMOS p-type metal-oxide-semiconductor devicesgrown on silicon-on-insulator substrates has been measured by using the geometrical phase analysis of high angle annular dark field scanning electron microscopy. We show that by using the latest generations of electron microscopes, the strain can now be quantitatively measured with a large field of view, a spatial resolution as low as 1 nm with a sensitivity as good as 0.15%. This technique is extremely flexible, provides both structural and strain information, and can be applied to all types of nanoscale materials both quickly and easily.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos Publication Date 2012-06-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited (up) Open Access  
  Notes Approved Most recent IF: 3.411; 2012 IF: 3.794  
  Call Number UA @ lucian @ c:irua:136432 Serial 4509  
Permanent link to this record
 

 
Author Idrissi, H.; Ghidelli, M.; Béché, A.; Turner, S.; Gravier, S.; Blandin, J.-J.; Raskin, J.-P.; Schryvers, D.; Pardoen, T. url  doi
openurl 
  Title Atomic-scale viscoplasticity mechanisms revealed in high ductility metallic glass films Type A1 Journal article
  Year 2019 Publication Scientific reports Abbreviated Journal Sci Rep-Uk  
  Volume 9 Issue 1 Pages 13426  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract The fundamental plasticity mechanisms in thin freestanding Zr65Ni35 metallic glass films are investigated in order to unravel the origin of an outstanding strength/ductility balance. The deformation process is homogenous until fracture with no evidence of catastrophic shear banding. The creep/relaxation behaviour of the films was characterized by on-chip tensile testing, revealing an activation volume in the range 100–200 Å3. Advanced high-resolution transmission electron microscopy imaging and spectroscopy exhibit a very fine glassy nanostructure with well-defined dense Ni-rich clusters embedded in Zr-rich clusters of lower atomic density and a ~2–3 nm characteristic length scale. Nanobeam electron diffraction analysis reveals that the accumulation of plastic deformation at roomtemperature

correlates with monotonously increasing disruption of the local atomic order. These results provide experimental evidences of the dynamics of shear transformation zones activation in metallic glasses. The impact of the nanoscale structural heterogeneities on the mechanical properties including the rate dependent behaviour is discussed, shedding new light on the governing plasticity mechanisms in metallic glasses with initially heterogeneous atomic arrangement.
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000486139700008 Publication Date 2019-09-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2045-2322 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.259 Times cited (up) Open Access  
  Notes H. Idrissi is mandated by the Belgian National Fund for Scientific Research (FSR-FNRS). This work was supported by the FNRS under Grant PDR – T.0178.19. FWO project G093417N (‘Compressed sensing enabling low dose imaging in transmission electron microscopy’) and Hercules fund ‘Direct electron detector for soft matter TEM’ from Flemish Government are acknowledged. Approved Most recent IF: 4.259  
  Call Number EMAT @ emat @c:irua:162786 Serial 5375  
Permanent link to this record
 

 
Author MacArthur, K.E.; Yankovich, A.B.; Béché, A.; Luysberg, M.; Brown, H.G.; Findlay, S.D.; Heggen, M.; Allen, L.J. pdf  url
doi  openurl
  Title Optimizing Experimental Conditions for Accurate Quantitative Energy-Dispersive X-ray Analysis of Interfaces at the Atomic Scale Type A1 Journal article
  Year 2021 Publication Microscopy And Microanalysis Abbreviated Journal Microsc Microanal  
  Volume Issue Pages 1-15  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The invention of silicon drift detectors has resulted in an unprecedented improvement in detection efficiency for energy-dispersive X-ray (EDX) spectroscopy in the scanning transmission electron microscope. The result is numerous beautiful atomic-scale maps, which provide insights into the internal structure of a variety of materials. However, the task still remains to understand exactly where the X-ray signal comes from and how accurately it can be quantified. Unfortunately, when crystals are aligned with a low-order zone axis parallel to the incident beam direction, as is necessary for atomic-resolution imaging, the electron beam channels. When the beam becomes localized in this way, the relationship between the concentration of a particular element and its spectroscopic X-ray signal is generally nonlinear. Here, we discuss the combined effect of both spatial integration and sample tilt for ameliorating the effects of channeling and improving the accuracy of EDX quantification. Both simulations and experimental results will be presented for a perovskite-based oxide interface. We examine how the scattering and spreading of the electron beam can lead to erroneous interpretation of interface compositions, and what approaches can be made to improve our understanding of the underlying atomic structure.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000664532400007 Publication Date 2021-04-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1431-9276 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.891 Times cited (up) Open Access OpenAccess  
  Notes The authors would like to thank Jürgen Schubert for helping to supply the sample and valuable discussions on the topic. K. E. MacArthur and M. Heggen acknowledge the Helmholtz Funding agency and the DFG (grant number HE 7192/1-2) for their financial support of this work. L. J. Allen acknowledges the support of the Alexander von Humboldt Foundation. This research was supported under the Discovery Projects funding scheme of the Australian Research Council (Projects DP140102538 and FT190100619). K.E. MacArthur, A.B. Yankovich and A. Béché acknowledge support from the European Union’s Horizon 2020 research innovation program under grant agreement No. 823717 – ESTEEM3. A.B. Yankovich also acknowledges support from the Materials Science Area of Advance at Chalmers and the Swedish Research Council (VR, under grant No: 2020-04986).; esteem3TA; esteem3reported Approved Most recent IF: 1.891  
  Call Number EMAT @ emat @c:irua:178129 Serial 6760  
Permanent link to this record
 

 
Author Esteban, D.A.; Vanrompay, H.; Skorikov, A.; Béché, A.; Verbeeck, J.; Freitag, B.; Bals, S. pdf  url
doi  openurl
  Title Fast electron low dose tomography for beam sensitive materials Type A1 Journal article
  Year 2021 Publication Microscopy And Microanalysis Abbreviated Journal Microsc Microanal  
  Volume 27 Issue S1 Pages 2116-2118  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 2021-07-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1431-9276 ISBN Additional Links UA library record  
  Impact Factor 1.891 Times cited (up) Open Access OpenAccess  
  Notes Approved Most recent IF: 1.891  
  Call Number EMAT @ emat @c:irua:183278 Serial 6813  
Permanent link to this record
 

 
Author Savchenko, T.M.; Buzzi, M.; Howald, L.; Ruta, S.; Vijayakumar, J.; Timm, M.; Bracher, D.; Saha, S.; Derlet, P.M.; Béché, A.; Verbeeck, J.; Chantrell, R.W.; Vaz, C.A.F.; Nolting, F.; Kleibert, A. pdf  url
doi  openurl
  Title Single femtosecond laser pulse excitation of individual cobalt nanoparticles Type A1 Journal article
  Year 2020 Publication Physical Review B Abbreviated Journal Phys Rev B  
  Volume 102 Issue 20 Pages 205418  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Laser-induced manipulation of magnetism at the nanoscale is a rapidly growing research topic with potential for applications in spintronics. In this work, we address the role of the scattering cross section, thermal effects, and laser fluence on the magnetic, structural, and chemical stability of individual magnetic nanoparticles excited by single femtosecond laser pulses. We find that the energy transfer from the fs laser pulse to the nanoparticles is limited by the Rayleigh scattering cross section, which in combination with the light absorption of the supporting substrate and protective layers determines the increase in the nanoparticle temperature. We investigate individual Co nanoparticles (8 to 20 nm in size) as a prototypical model system, using x-ray photoemission electron microscopy and scanning electron microscopy upon excitation with single femtosecond laser pulses of varying intensity and polarization. In agreement with calculations, we find no deterministic or stochastic reversal of the magnetization in the nanoparticles up to intensities where ultrafast demagnetization or all-optical switching is typically reported in thin films. Instead, at higher fluences, the laser pulse excitation leads to photo-chemical reactions of the nanoparticles with the protective layer, which results in an irreversible change in the magnetic properties. Based on our findings, we discuss the conditions required for achieving laser-induced switching in isolated nanomagnets.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000589602000005 Publication Date 2020-11-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Additional Links UA library record; WoS full record  
  Impact Factor 3.7 Times cited (up) 1 Open Access OpenAccess  
  Notes This work received funding by the Swiss National Foundation (SNF) (Grants No. 200021160186 and No. 2002153540), the Swiss Nanoscience Institute (SNI) (Grant No. SNI P1502), the European Union’s Horizon 2020 research and innovation programme under Grant Agreement No. 737093 (FEMTOTERABYTE), and the COST Action CA17123 (MAGNETOFON). Part of this work was performed at the SIM beamline of the Swiss Light Source (SLS), Paul Scherrer Institut, Villigen, Switzerland. Part of the simulations were undertaken on the VIKING cluster, which is a high-performance compute facility provided by the University of York. We kindly acknowledge Anja Weber from PSI for preparation of substrates with marker structures. A.B. and Jo Verbeeck acknowledge funding through FWO Project No. G093417N (“Compressed sensing enabling low dose imaging in transmission electron microscopy”) from the Flanders Research Fund. Jo Verbeeck acknowledges funding from the European Union’s Horizon 2020 research and innovation program under Grant Agreement No. 823717 – ESTEEM3. S.S. acknowledges ETH Zurich Post-Doctoral fellowship and Marie Curie actions for people COFUND program.; esteem3JRA; esteem3reported Approved Most recent IF: 3.7; 2020 IF: 3.836  
  Call Number EMAT @ emat @c:irua:174273 Serial 6669  
Permanent link to this record
 

 
Author Vijayakumar, J.; Savchenko, T.M.; Bracher, D.M.; Lumbeeck, G.; Béché, A.; Verbeeck, J.; Vajda, Š.; Nolting, F.; Vaz, Ca.f.; Kleibert, A. url  doi
openurl 
  Title Absence of a pressure gap and atomistic mechanism of the oxidation of pure Co nanoparticles Type A1 Journal Article
  Year 2023 Publication Nature communications Abbreviated Journal Nat Commun  
  Volume 14 Issue 1 Pages 174  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Understanding chemical reactivity and magnetism of 3<italic>d</italic>transition metal nanoparticles is of fundamental interest for applications in fields ranging from spintronics to catalysis. Here, we present an atomistic picture of the early stage of the oxidation mechanism and its impact on the magnetism of Co nanoparticles. Our experiments reveal a two-step process characterized by (i) the initial formation of small CoO crystallites across the nanoparticle surface, until their coalescence leads to structural completion of the oxide shell passivating the metallic core; (ii) progressive conversion of the CoO shell to Co<sub>3</sub>O<sub>4</sub>and void formation due to the nanoscale Kirkendall effect. The Co nanoparticles remain highly reactive toward oxygen during phase (i), demonstrating the absence of a pressure gap whereby a low reactivity at low pressures is postulated. Our results provide an important benchmark for the development of theoretical models for the chemical reactivity in catalysis and magnetism during metal oxidation at the nanoscale.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000955726400021 Publication Date 2023-01-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2041-1723 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 16.6 Times cited (up) 1 Open Access OpenAccess  
  Notes Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, 200021160186 2002153540 ; EC | Horizon 2020 Framework Programme, 810310 823717 ; University of Basel | Swiss Nanoscience Institute, P1502 ; This work is funded by Swiss National Foundation (SNF) (Grants. No 200021160186 and 2002153540) and the Swiss Nanoscience Institut (SNI) (Grant No. SNI P1502). S.V. acknowledges support from the European Union’s Horizon 2020 research and innovation programme under grant agreement no. 810310, which corresponds to the J. Heyrovsky Chair project (“ERA Chair at J. Heyrovský Institute of Physical Chemistry AS CR – The institutional approach towards ERA”). The funders had no role in the preparation of the article. Part of this work was performed at the Surface/Interface: Microscopy (SIM) beamline of the Swiss Light Source (SLS), Paul Scherrer Institut, Villigen, Switzerland. We kindly acknowledge Anja Weber and Elisabeth Müller from PSI for their help in fabricating the sample markers. A.B. and J. Verbeeck received funding from the European Union’s Horizon 2020 Research Infrastructure – Integrating Activities for Advanced Communities under grant agreement No. 823717 – ESTEEM3 reported Approved Most recent IF: 16.6; 2023 IF: 12.124  
  Call Number EMAT @ emat @c:irua:196738 Serial 8804  
Permanent link to this record
 

 
Author Yu, CP.; Vega Ibañez, F.; Béché, A.; Verbeeck, J. url  doi
openurl 
  Title Quantum wavefront shaping with a 48-element programmable phase plate for electrons Type A1 Journal Article
  Year 2023 Publication SciPost Physics Abbreviated Journal SciPost Phys.  
  Volume 15 Issue Pages 223  
  Keywords A1 Journal Article; Electron Microscopy for Materials Science (EMAT)  
  Abstract We present a 48-element programmable phase plate for coherent electron waves produced by a combination of photolithography and focused ion beam. This brings the highly successful concept of wavefront shaping from light optics into the realm of electron optics and provides an important new degree of freedom to prepare electron quantum states. The phase plate chip is mounted on an aperture rod placed in the C2 plane of a transmission electron microscope operating in the 100-300 kV range. The phase plate's behavior is characterized by a Gerchberg-Saxton algorithm, showing a phase sensitivity of 0.075 rad/mV at 300 kV, with a phase resolution of approximately 3x10e−3π. In addition, we provide a brief overview of possible use cases and support it with both simulated and experimental results.  
  Address  
  Corporate Author Thesis  
  Publisher SciPost Place of Publication Editor  
  Language English Wos 001116838500002 Publication Date 2023-12-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2542-4653 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 5.5 Times cited (up) 1 Open Access  
  Notes This project is the result of a long-term effort involving many differ- ent sources of funding: JV acknowledges funding from an ERC proof of concept project DLV- 789598 ADAPTEM, as well as a University IOF proof of concept project towards launching the AdaptEM spin-off and the eBEAM project, supported by the European Union’s Horizon 2020 research and innovation program FETPROACT-EIC-07-2020: emerging paradigms and com- munities. This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No 823717 – ESTEEM3 and via The IMPRESS project from the HORIZON EUROPE framework program for research and innovation under grant agreement n. 101094299. FV, JV, and AB acknowledge funding from G042820N ‘Explor- ing adaptive optics in transmission electron microscopy.’ CPY acknowledges funding from a TOP-BOF project from the University of Antwerp. Approved Most recent IF: 5.5; 2023 IF: NA  
  Call Number EMAT @ emat @c:irua:202037 Serial 8984  
Permanent link to this record
 

 
Author Jalabert, D.; Pelloux-Gervais, D.; Béché, A.; Hartmann, J.M.; Gergaud, P.; Rouvière, J.L.; Canut, B. doi  openurl
  Title Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering Type A1 Journal article
  Year 2012 Publication Physica Status Solidi A-Applications And Materials Science Abbreviated Journal Phys Status Solidi A  
  Volume 209 Issue 2 Pages 265-267  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000303382700005 Publication Date 2011-11-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6300; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.775 Times cited (up) 3 Open Access  
  Notes Approved Most recent IF: 1.775; 2012 IF: 1.469  
  Call Number UA @ lucian @ c:irua:136430 Serial 4497  
Permanent link to this record
 

 
Author Van Aert, S.; De Backer, A.; Jones, L.; Martinez, G.T.; Béché, A.; Nellist, P.D. pdf  url
doi  openurl
  Title Control of Knock-On Damage for 3D Atomic Scale Quantification of Nanostructures: Making Every Electron Count in Scanning Transmission Electron Microscopy Type A1 Journal article
  Year 2019 Publication Physical review letters Abbreviated Journal Phys Rev Lett  
  Volume 122 Issue 6 Pages 066101  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Understanding nanostructures down to the atomic level is the key to optimizing the design of advancedmaterials with revolutionary novel properties. This requires characterization methods capable of quantifying the three-dimensional (3D) atomic structure with the highest possible precision. A successful approach to reach this goal is to count the number of atoms in each atomic column from 2D annular dark field scanning transmission electron microscopy images. To count atoms with single atom sensitivity, a minimum electron dose has been shown to be necessary, while on the other hand beam damage, induced by the high energy electrons, puts a limit on the tolerable dose. An important challenge is therefore to develop experimental strategies to optimize the electron dose by balancing atom-counting fidelity vs the risk of knock-on damage. To achieve this goal, a statistical framework combined with physics-based modeling of the dose-dependent processes is here proposed and experimentally verified. This model enables an investigator to theoretically predict, in advance of an experimental measurement, the optimal electron dose resulting in an unambiguous quantification of nanostructures in their native state with the highest attainable precision.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000458824200008 Publication Date 2019-02-13  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-9007 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 8.462 Times cited (up) 3 Open Access OpenAccess  
  Notes This project has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (Grant Agreement No. 770887). The authors acknowledge financial support from the Research Foundation Flanders (FWO, Belgium) through project fundings (WO.010.16N, G.0934.17N, G.0502.18N, G.0267.18N), and a grant to A. D. B. The research leading to these results has received funding from the European Union Seventh Framework Programme under Grant Agreement No. 312483— ESTEEM2 (Integrated Infrastructure Initiative-I3) and the UK EPSRC (Grant No. EP/M010708/1). Approved Most recent IF: 8.462  
  Call Number EMAT @ emat @UA @ admin @ c:irua:157175 Serial 5156  
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Author Guzzinati, G.; Béché, A.; McGrouther, D.; Verbeeck, J. pdf  url
doi  openurl
  Title Prospects for out-of-plane magnetic field measurements through interference of electron vortex modes in the TEM Type A1 Journal article
  Year 2019 Publication Journal of optics Abbreviated Journal J Optics-Uk  
  Volume 21 Issue 12 Pages 124002  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Magnetic field mapping in transmission electron microscopy is commonplace, but all conventional methods provide only a projection of the components of the magnetic induction perpendicular to the electron trajectory. Recent experimental advances with electron vortices have shown that it is possible to map the out of plane magnetic induction in a TEM setup via interferometry with a specifically prepared electron vortex state carrying high orbital angular momentum (OAM). The method relies on the Aharonov?Bohm phase shift that the electron undergoes when going through a longitudinal field. Here we show how the same effect naturally occurs for any electron wave function, which can always be described as a superposition of OAM modes. This leads to a clear connection between the occurrence of high-OAM partial waves and the amount of azimuthal rotation in the far field angular distribution of the beam. We show that out of plane magnetic field measurement can thus be obtained with a much simpler setup consisting of a ring-like aperture with azimuthal spokes. We demonstrate the experimental setup and explore the achievable sensitivity of the magnetic field measurement.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000499367800001 Publication Date 2019-10-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2040-8978 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.741 Times cited (up) 3 Open Access  
  Notes The authors thank V Grillo and T Harvey for interesting and fruitful discussion. GG acknowledges support from a postdoctoral fellow-ship grant from the Fonds Wetenschappelijk Onderzoek – Vlaanderen (FWO). The Qu-Ant-EM microscope was partly funded by the Hercules fund from the Flemish Government. This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3. AB acknowledges funding from FWO project G093417N ('Compressed sensing enabling low dose imaging in transmission electron microscopy'). DM gratefully acknowledges funding of the FEBID capability through joint funding by University of Glasgow & EPSRC through a Strategic Equipment Grant (EP/P001483/1). Approved Most recent IF: 1.741  
  Call Number UA @ admin @ c:irua:165116 Serial 6319  
Permanent link to this record
 

 
Author Vega Ibañez, F.; Béché, A.; Verbeeck, J. url  doi
openurl 
  Title Can a programmable phase plate serve as an aberration corrector in the transmission electron microscope (TEM)? Type A1 Journal article
  Year 2022 Publication Microscopy and microanalysis Abbreviated Journal Microsc Microanal  
  Volume Issue Pages Pii S1431927622012260-10  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Current progress in programmable electrostatic phase plates raises questions about their usefulness for specific applications. Here, we explore different designs for such phase plates with the specific goal of correcting spherical aberration in the transmission electron microscope (TEM). We numerically investigate whether a phase plate could provide down to 1 angstrom ngstrom spatial resolution on a conventional uncorrected TEM. Different design aspects (fill factor, pixel pattern, symmetry) were evaluated to understand their effect on the electron probe size and current density. Some proposed designs show a probe size () down to 0.66 angstrom, proving that it should be possible to correct spherical aberration well past the 1 angstrom limit using a programmable phase plate consisting of an array of electrostatic phase-shifting elements.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000849975400001 Publication Date 2022-09-21  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1431-9276 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.8 Times cited (up) 3 Open Access OpenAccess  
  Notes All authors acknowledge funding from the Flemish Research Fund under contract G042820N “Exploring adaptive optics in transmission electron microscopy”. J.V. acknowledges funding from the European Union’s Horizon 2020 Research Infrastructure – Integrating Activities for Advanced Communities under grant agreement No 823717 – ESTEEM3 and from the University of Antwerp through a TOP BOF project.; esteem3reported; esteem3jra Approved Most recent IF: 2.8  
  Call Number UA @ admin @ c:irua:190627 Serial 7134  
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Author Bhat, S.G.; Gauquelin, N.; Sebastian, N.K.; Sil, A.; Béché, A.; Verbeeck, J.; Samal, D.; Kumar, P.S.A. pdf  doi
openurl 
  Title Orthorhombic vs. hexagonal epitaxial SrIrO3 thin films : structural stability and related electrical transport properties Type A1 Journal article
  Year 2018 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett  
  Volume 122 Issue 2 Pages 28003  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Metastable orthorhombic SrIrO3 (SIO) is an arch-type spin-orbit coupled material. We demonstrate here a controlled growth of relatively thick (200 nm) SIO films that transform from bulk “6H-type” structure with monoclinic distortion to an orthorhombic lattice by controlling growth temperature. Extensive studies based on high-resolution X-ray diffraction and transmission electron microscopy infer a two distinct structural phases of SIO. Electrical transport reveals a weak temperature-dependent semi-metallic character for both phases. However, the temperature-dependent Hall-coefficient for the orthorhombic SIO exhibits a prominent sign change, suggesting a multiband character in the vicinity of E-F. Our findings thus unravel the subtle structure-property relation in SIO epitaxial thin films. Copyright (C) EPLA, 2018  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Paris Editor  
  Language Wos 000435517300001 Publication Date 2018-06-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0295-5075 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.957 Times cited (up) 4 Open Access Not_Open_Access  
  Notes ; SGB and DS acknowledge useful discussions with E. P. Houwman, University of Twente, on X-ray diffraction. DS would like to thank H. Takagi, Max-Planck Institute for Solid State Research, Stuttgart, for the fruitful discussion on the transport properties of SIO thin films. SGB and NKS thank A. Aravind, Bishop Moore College, Mavelikara, for his valuable inputs while depositing the thin films of SIO. SGB, NKS and PSAK acknowledge Nano Mission Council, Department of Science & Technology, India, for the funding. DS acknowledges the financial support from Max-Planck Society through MaxPlanck Partner Group. NG, AB and JV acknowledge funding from GOA project “Solarpaint” of the University of Antwerp and FWO project G093417N. ; Approved Most recent IF: 1.957  
  Call Number UA @ lucian @ c:irua:152074UA @ admin @ c:irua:152074 Serial 5034  
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Author Prabhakara, V.; Jannis, D.; Guzzinati, G.; Béché, A.; Bender, H.; Verbeeck, J. url  doi
openurl 
  Title HAADF-STEM block-scanning strategy for local measurement of strain at the nanoscale Type A1 Journal article
  Year 2020 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 219 Issue Pages 113099  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Lattice strain measurement of nanoscale semiconductor devices is crucial for the semiconductor industry as strain substantially improves the electrical performance of transistors. High resolution scanning transmission electron microscopy (HR-STEM) imaging is an excellent tool that provides spatial resolution at the atomic scale and strain information by applying Geometric Phase Analysis or image fitting procedures. However, HR-STEM images regularly suffer from scanning distortions and sample drift during image acquisition. In this paper, we propose a new scanning strategy that drastically reduces artefacts due to drift and scanning distortion, along with extending the field of view. It consists of the acquisition of a series of independent small subimages containing an atomic resolution image of the local lattice. All subimages are then analysed individually for strain by fitting a nonlinear model to the lattice images. The method allows flexible tuning of spatial resolution and the field of view within the limits of the dynamic range of the scan engine while maintaining atomic resolution sampling within the subimages. The obtained experimental strain maps are quantitatively benchmarked against the Bessel diffraction technique. We demonstrate that the proposed scanning strategy approaches the performance of the diffraction technique while having the advantage that it does not require specialized diffraction cameras.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000594768500006 Publication Date 2020-09-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.2 Times cited (up) 4 Open Access OpenAccess  
  Notes A.B. D.J. and J.V. acknowledge funding through FWO project G093417N ('Compressed sensing enabling low dose imaging in transmission electron microscopy') from the Flanders Research Fund. J.V acknowledges funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3. The Qu-Ant-EM microscope and the direct electron detector used in the diffraction experiments was partly funded by the Hercules fund from the Flemish Government. This project has received funding from the GOA project “Solarpaint” of the University of Antwerp. GG acknowledges support from a postdoctoral fellowship grant from the Fonds Wetenschappelijk Onderzoek – Vlaanderen (FWO). Special thanks to Dr. Thomas Nuytten, Prof. Dr. Wilfried Vandervorst, Dr. Paola Favia, Dr. Olivier Richard from IMEC, Leuven and Prof. Dr. Sara Bals from EMAT, Antwerp for their continuous support and collaboration with the project and to the IMEC processing group for the device fabrication. Approved Most recent IF: 2.2; 2020 IF: 2.843  
  Call Number EMAT @ emat @c:irua:172485 Serial 6404  
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Author Jannis, D.; Velazco, A.; Béché, A.; Verbeeck, J. url  doi
openurl 
  Title Reducing electron beam damage through alternative STEM scanning strategies, Part II: Attempt towards an empirical model describing the damage process Type A1 Journal article
  Year 2022 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume Issue Pages 113568  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract In this second part of a series we attempt to construct an empirical model that can mimick all experimental observations made regarding the role of an alternative interleaved scan pattern in STEM imaging on the beam damage in a specific zeolite sample. We make use of a 2D diffusion model that describes the dissipation of the deposited beam energy in the sequence of probe positions that are visited during the scan pattern. The diffusion process allows for the concept of trying to ‘outrun’ the beam damage by carefully tuning the dwell time and distance between consecutively visited probe positions. We add a non linear function to include a threshold effect and evaluate the accumulated damage in each part of the image as a function of scan pattern details. Together, these ingredients are able to describe qualitatively all aspects of the experimental data and provide us with a model that could guide a further optimisation towards even lower beam damage without lowering the applied electron dose. We deliberately remain vague on what is diffusing here which avoids introducing too many sample specific details. This provides hope that the model can be applied also in sample classes that were not yet studied in such great detail by adjusting higher level parameters: a sample dependent diffusion constant and damage threshold.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000832788000003 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.2 Times cited (up) 4 Open Access OpenAccess  
  Notes D.J., A.V, A.B. and J.V. acknowledge funding from FWO project G093417N (’Compressed sensing enabling low dose imaging in transmission electron microscopy’) and G042920N (’Coincident event detection for advanced spectroscopy in transmission electron microscopy’). This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 823717 ESTEEM3. The Qu-Ant-EM microscope was partly funded by the Hercules fund from the Flemish Government. J.V. acknowledges funding from GOA project “Solarpaint” of the University of Antwerp .; esteem3reported; esteem3jra; Approved Most recent IF: 2.2  
  Call Number EMAT @ emat @c:irua:188535 Serial 7071  
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Author Idrissi, H.; Béché, A.; Gauquelin, N.; Ul-Haq, I.; Bollinger, C.; Demouchy, S.; Verbeeck, J.; Pardoen, T.; Schryvers, D.; Cordier, P. url  doi
openurl 
  Title On the formation mechanisms of intragranular shear bands in olivine by stress-induced amorphization Type A1 Journal article
  Year 2022 Publication Acta materialia Abbreviated Journal Acta Mater  
  Volume 239 Issue Pages 118247-118249  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Intragranular amorphization shear lamellae are found in deformed olivine aggregates. The detailed trans-mission electron microscopy analysis of intragranular lamella arrested in the core of a grain provides novel information on the amorphization mechanism. The deformation field is complex and heteroge-neous, corresponding to a shear crack type instability involving mode I, II and III loading components. The formation and propagation of the amorphous lamella is accompanied by the formation of crystal defects ahead of the tip. These defects are geometrically necessary [001] dislocations, characteristics of high-stress deformation in olivine, and rotational nanodomains which are tentatively interpreted as disclinations. We show that these defects play an important role in dictating the path followed by the amorphous lamella. Stress-induced amorphization in olivine would thus result from a direct crystal-to -amorphous transformation associated with a shear instability and not from a mechanical destabilization due to the accumulation of high number of defects from an intense preliminary deformation. The pref-erential alignment of some lamellae along (010) is a proof of the lower ultimate mechanical strength of these planes.(c) 2022 The Authors. Published by Elsevier Ltd on behalf of Acta Materialia Inc. This is an open access article under the CC BY license ( http://creativecommons.org/licenses/by/4.0/ )  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000861076600004 Publication Date 2022-08-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1359-6454 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 9.4 Times cited (up) 5 Open Access OpenAccess  
  Notes The QuanTEM microscope was partially funded by the Flemish government. The K2 camera was funded by FWO Hercules fund G0H4316N 'Direct electron detector for soft matter TEM'. A. Beche acknowledges funding from FWO project G093417N ('Compressed sensing enabling low dose imaging in transmission electron microscopy'). H. Idrissi is mandated by the Belgian National Fund for Scientific Research (FSR-FNRS). This work was supported by the FNRS under Grant PDR – T011322F and by the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme under grant agreement No 787,198 Time Man. J-L Rouviere is acknowledged for his support with the GPA softawre. Approved Most recent IF: 9.4  
  Call Number UA @ admin @ c:irua:191432 Serial 7186  
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Author Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S. doi  openurl
  Title Towards rapid nanoscale measurement of strain in III-nitride heterostructures Type A1 Journal article
  Year 2013 Publication Applied Physics Letters Abbreviated Journal Appl Phys Lett  
  Volume 103 Issue Pages 231904  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We report the structural and compositional nanoscale characterization of InAlN/GaN nanoribbon-structured high electron mobility transistors (HEMTs) through the use of geometric phase analysis (GPA) and nanobeam electron diffraction (NBED). The strain distribution in the HEMT layer is quantified and compared to the expected strain profile for the nominal structure predicted by finite element analysis (FEA). Using the experimental strain results, the actual structure is determined and used to modify the FEA model. The improved fit of the model demonstrates that GPA and NBED provide a powerful platform for routine and rapid characterization of strain in III-V semiconducting device systems leading to insights into device evolution during processing and future device optimization.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000328634900025 Publication Date 2013-12-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; 1077-3118 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited (up) 6 Open Access  
  Notes Approved Most recent IF: 3.411; 2013 IF: 3.515  
  Call Number UA @ lucian @ c:irua:136443 Serial 4513  
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Author Clark, L.; Guzzinati, G.; Béché, A.; Lubk, A.; Verbeeck, J. pdf  url
doi  openurl
  Title Symmetry-constrained electron vortex propagation Type A1 Journal article
  Year 2016 Publication Physical review A Abbreviated Journal Phys Rev A  
  Volume 93 Issue 93 Pages 063840  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Electron vortex beams hold great promise for development in transmission electron microscopy but have yet to be widely adopted. This is partly due to the complex set of interactions that occur between a beam carrying orbital angular momentum (OAM) and a sample. Herein, the system is simplified to focus on the interaction between geometrical symmetries, OAM, and topology. We present multiple simulations alongside experimental data to study the behavior of a variety of electron vortex beams after interacting with apertures of different symmetries and investigate the effect on their OAM and vortex structure, both in the far field and under free-space propagation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000378197200006 Publication Date 2016-06-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2469-9926 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.925 Times cited (up) 7 Open Access  
  Notes L.C., A.B., G.G., and J.V. acknowledge funding from the European Research Council under the 7th Framework Program (FP7), ERC Starting Grant No. 278510—VORTEX. J.V. and A.L. acknowledge financial support from the European Union through the 7th Framework Program (FP7) under a contract for an Integrated Infrastructure Initiative (Reference No. 312483 ESTEEM2). The Qu-Ant-EM microscope was partly funded by the Hercules fund of the Flemish Government.; esteem2jra3; ECASJO; Approved Most recent IF: 2.925  
  Call Number c:irua:134086 c:irua:134086 Serial 4090  
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Author Van den Broek, W.; Reed, B.W.; Béché, A.; Velazco, A.; Verbeeck, J.; Koch, C.T. pdf  doi
openurl 
  Title Various compressed sensing setups evaluated against Shannon sampling under constraint of constant illumination Type A1 Journal article
  Year 2019 Publication IEEE transactions on computational imaging Abbreviated Journal  
  Volume 5 Issue 3 Pages 502-514  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Under the constraint of constant illumination, an information criterion is formulated for the Fisher information that compressed sensing measurements in optical and transmission electron microscopy contain about the underlying parameters. Since this approach requires prior knowledge of the signal's support in the sparse basis, we develop a heuristic quantity, the detective quantum efficiency (DQE), that tracks this information criterion well without this knowledge. In this paper, it is shown that for the investigated choice of sensing matrices, and in the absence of read-out noise, i.e., with only Poisson noise present, compressed sensing does not raise the amount of Fisher information in the recordings above that of Shannon sampling. Furthermore, enabled by the DQE's analytical tractability, the experimental designs are optimized by finding out the optimal fraction of on pixels as a function of dose and read-out noise. Finally, we introduce a regularization and demonstrate, through simulations and experiment, that it yields reconstructions attaining minimum mean squared error at experimental settings predicted by the DQE as optimal.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000480352600013 Publication Date 2019-01-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2333-9403 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4.546 Times cited (up) 7 Open Access  
  Notes ; This work was supported by the Hercules fund from the Flemish Government (Qu-Ant-EM microscope used for the experimental data). The work of W. Van den Broek was supported by the DFG under Grant BR 5095/2-1 (Compressed sensing in ptychography and transmission electron microscopy). The work of A. Beche, A. Velazco, and J. Verbeeck was supported by the FWO under Grant G093417N (Compressed sensing enabling low dose imaging in transmission electron microscopy). The work of Christoph T. Koch was supported by the DFG under Grant CRC 951. The associate editor coordinating the review of this manuscript and approving it for publication was Dr. Chrysanthe Preza. ; Approved Most recent IF: NA  
  Call Number UA @ admin @ c:irua:161792 Serial 5368  
Permanent link to this record
 

 
Author van den Bos, K.H.W.; Krause, F.F.; Béché, A.; Verbeeck, J.; Rosenauer, A.; Van Aert, S. url  doi
openurl 
  Title Locating light and heavy atomic column positions with picometer precision using ISTEM Type A1 Journal article
  Year 2016 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 172 Issue 172 Pages 75-81  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Recently, imaging scanning transmission electron microscopy (ISTEM) has been proposed as a promising new technique combining the advantages of conventional TEM (CTEM) and STEM [1]. The ability to visualize light and heavy elements together makes it a particularly interesting new, spatially incoherent imaging mode. Here, we evaluate this technique in term of precision with which atomic column locations can be measured. By using statistical parameter estimation theory, we will show that these locations can be accurately measured with a precision in the picometer range. Furthermore, a quantitative comparison is made with HAADF STEM imaging to investigate the advantages of ISTEM.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000390600200009 Publication Date 2016-10-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited (up) 8 Open Access  
  Notes The authors acknowledge financial support from the Research Foundation Flanders (FWO, Belgium) through project fundings (G.0374.13N, G.0368.15N, G.0369.15N), and by a Ph.D. grant to K.H.W. van den Bos. The research leading to these results has received funding from the Deutsche Forschungsgemeinschaft under Contract No. RO 2057/4-2 and the European Union Seventh Framework Programme under Grant Agreement 312483 – ESTEEM2. We thank Prof. G. Koster from the University of Twente for kindly providing us with the PbTiO3 test sample. Approved Most recent IF: 2.843  
  Call Number EMAT @ emat @ c:irua:136109UA @ admin @ c:irua:136109 Serial 4288  
Permanent link to this record
 

 
Author Prabhakara, V.; Jannis, D.; Béché, A.; Bender, H.; Verbeeck, J. url  doi
openurl 
  Title Strain measurement in semiconductor FinFET devices using a novel moiré demodulation technique Type A1 Journal article
  Year 2019 Publication Semiconductor science and technology Abbreviated Journal Semicond Sci Tech  
  Volume Issue Pages  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Moiré fringes are used throughout a wide variety of applications in physics and

engineering to bring out small variations in an underlying lattice by comparing with another reference lattice. This method was recently demonstrated in Scanning Transmission Electron Microscopy imaging to provide local strain measurement in crystals by comparing the crystal lattice with the scanning raster that then serves as the reference. The images obtained in this way contain a beating fringe pattern with a local period that represents the deviation of the lattice from the reference. In order to obtain the actual strain value, a region containing a full period of the fringe is required, which results in a compromise between strain sensitivity and spatial resolution. In this paper we propose an advanced setup making use of an optimised scanning pattern and a novel phase stepping demodulation scheme. We demonstrate the novel method on a series of 16 nm Si-Ge semiconductor FinFET devices in which strain plays a crucial role in modulating the charge carrier mobility. The obtained results are compared with both Nano-beam diffraction and the recently proposed Bessel beam diffraction technique. The setup provides a much improved spatial resolution over conventional moiré imaging in STEM while at the same time being fast and requiring no specialised diffraction camera as opposed to the diffraction techniques we compare to.
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000537721200002 Publication Date 2019-11-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0268-1242 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.305 Times cited (up) 8 Open Access  
  Notes The Qu-Ant-EM microscope and the direct electron detector used in the diffraction experiments was partly funded by the Hercules fund from the Flemish Government. This project has received funding from the GOA project “Solarpaint” of the University of Antwerp. We would also like to thank Dr. Thomas Nuytten and Prof. Dr. Wilfried Vandervorst from IMEC, Leuven for their continuous support and collaboration with the project. Approved Most recent IF: 2.305  
  Call Number EMAT @ emat @c:irua:165794 Serial 5445  
Permanent link to this record
 

 
Author Jannis, D.; Müller-Caspary, K.; Béché, A.; Verbeeck, J. pdf  url
doi  openurl
  Title Coincidence Detection of EELS and EDX Spectral Events in the Electron Microscope Type A1 Journal article
  Year 2021 Publication Applied Sciences-Basel Abbreviated Journal Appl Sci-Basel  
  Volume 11 Issue 19 Pages 9058  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Recent advances in the development of electron and X-ray detectors have opened up the possibility to detect single events from which its time of arrival can be determined with nanosecond resolution. This allows observing time correlations between electrons and X-rays in the transmission electron microscope. In this work, a novel setup is described which measures individual events using a silicon drift detector and digital pulse processor for the X-rays and a Timepix3 detector for the electrons. This setup enables recording time correlation between both event streams while at the same time preserving the complete conventional electron energy loss (EELS) and energy dispersive X-ray (EDX) signal. We show that the added coincidence information improves the sensitivity for detecting trace elements in a matrix as compared to conventional EELS and EDX. Furthermore, the method allows the determination of the collection efficiencies without the use of a reference sample and can subtract the background signal for EELS and EDX without any prior knowledge of the background shape and without pre-edge fitting region. We discuss limitations in time resolution arising due to specificities of the silicon drift detector and discuss ways to further improve this aspect.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000710160300001 Publication Date 2021-09-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2076-3417 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.679 Times cited (up) 9 Open Access OpenAccess  
  Notes Fonds Wetenschappelijk Onderzoek, G042920 ; Horizon 2020 Framework Programme, 101017720 ; Helmholtz-Fonds, VH-NG-1317 ; Approved Most recent IF: 1.679  
  Call Number EMAT @ emat @c:irua:183336 Serial 6821  
Permanent link to this record
 

 
Author Gao, C.; Hofer, C.; Jannis, D.; Béché, A.; Verbeeck, J.; Pennycook, T.J. pdf  url
doi  openurl
  Title Overcoming contrast reversals in focused probe ptychography of thick materials: An optimal pipeline for efficiently determining local atomic structure in materials science Type A1 Journal article
  Year 2022 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 121 Issue 8 Pages 081906  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Ptychography provides highly efficient imaging in scanning transmission electron microscopy (STEM), but questions have remained over its applicability to strongly scattering samples such as those most commonly seen in materials science. Although contrast reversals can appear in ptychographic phase images as the projected potentials of the sample increase, we show here how these can be easily overcome by a small amount of defocus. The amount of defocus is small enough that it not only can exist naturally when focusing using the annular dark field (ADF) signal but can also be adjusted post acquisition. The ptychographic images of strongly scattering materials are clearer at finite doses than other STEM techniques and can better reveal light atomic columns within heavy lattices. In addition, data for ptychography can now be collected simultaneously with the fastest of ADF scans. This combination of sensitivity and interpretability presents an ideal workflow for materials science.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000844403300006 Publication Date 2022-08-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 4 Times cited (up) 9 Open Access OpenAccess  
  Notes European Research Council, 802123-HDEM ; HORIZON EUROPE European Research Council, 823717-ESTEEM3 ; Fonds Wetenschappelijk Onderzoek, G042920N ; Fonds Wetenschappelijk Onderzoek, G042820N ; Horizon 2020 Framework Programme, 101017720 ; Fonds Wetenschappelijk Onderzoek, G013122N ; esteem3reported; esteem3jra Approved Most recent IF: 4  
  Call Number EMAT @ emat @c:irua:190670 Serial 7120  
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Author Lubk, A.; Béché, A.; Verbeeck, J. pdf  url
doi  openurl
  Title Electron Microscopy of Probability Currents at Atomic Resolution Type A1 Journal article
  Year 2015 Publication Physical review letters Abbreviated Journal Phys Rev Lett  
  Volume 115 Issue 115 Pages 176101  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Atomic resolution transmission electron microscopy records the spatially resolved scattered electron density to infer positions, density, and species of atoms. These data are indispensable for studying the relation between structure and properties in solids. Here, we show how this signal can be augmented by the lateral probability current of the scattered electrons in the object plane at similar resolutions and fields of view. The currents are reconstructed from a series of three atomic resolution TEM images recorded under a slight difference of perpendicular line foci. The technique does not rely on the coherence of the electron beam and can be used to reveal electric, magnetic, and strain fields with incoherent electron beams as well as correlations in inelastic transitions, such as electron magnetic chiral dichroism.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000363023700011 Publication Date 2015-10-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-9007;1079-7114; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 8.462 Times cited (up) 12 Open Access  
  Notes J. V. and A. B. acknowledge funding from the European Research Council under the 7th Framework Program (FP7), ERC Starting Grant No. 278510 VORTEX. The Qu-Ant- EM microscope was partly funded by the Hercules fund from the Flemish Government. All authors acknowledge financial support from the European Union under the Seventh Framework Program under a contract for an Integrated Infrastructure Initiative. Reference No. 312483- ESTEEM2. J. V. acknowledges funding from the FWO under Project No. G.0044.13N.; esteem2jra2; esteem2jra3 ECASJO_; Approved Most recent IF: 8.462; 2015 IF: 7.512  
  Call Number c:irua:129190 c:irua:129190UA @ admin @ c:irua:129190 Serial 3954  
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