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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Jalabert, D.; Pelloux-Gervais, D.; Béché, A.; Hartmann, J.M.; Gergaud, P.; Rouvière, J.L.; Canut, B. Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering 2012 Physica Status Solidi A-Applications And Materials Science 209 3 UA library record; WoS full record; WoS citing articles doi
Denneulin, T.; Rouvière, J.L.; Béché, A.; Py, M.; Barnes, J.P.; Rochat, N.; Hartmann, J.M.; Cooper, D. The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography 2011 Semiconductor science and technology 26 UA library record; WoS full record; WoS citing articles pdf doi
Béché, A.; Rouvière, J.L.; Barnes, J.P.; Cooper, D. Dark field electron holography for strain measurement 2011 Ultramicroscopy 111 31 UA library record; WoS full record; WoS citing articles doi
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