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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. |
Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference |
2008 |
Physical review : B : condensed matter and materials physics |
77 |
8 |
UA library record; WoS full record; WoS citing articles |
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Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. |
Structural characterization of SnS crystals formed by chemical vapour deposition |
2017 |
Journal of microscopy
T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND |
268 |
2 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Belmonte, A.; Degraeve, R.; Fantini, A.; Goux, L.; Govoreanu, B.; Jurczak, M.; Ota, K.; Redolfi, A.; Kar, G.S.; Pourtois, G. |
Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories |
2017 |
Journal of computational electronics |
16 |
2 |
UA library record; WoS full record; WoS citing articles |
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Guo, J.; Clima, S.; Pourtois, G.; Van Houdt, J. |
Identifying alternative ferroelectric materials beyond Hf(Zr)O-₂ |
2020 |
Applied Physics Letters |
117 |
|
UA library record; WoS full record; WoS citing articles |
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Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling |
2011 |
Applied physics letters |
99 |
1 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors |
2018 |
Physical review B |
97 |
2 |
UA library record; WoS full record; WoS citing articles |
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Quan Manh, P.; Pourtois, G.; Swerts, J.; Pierloot, K.; Delabie, A. |
Atomic layer deposition of Ruthenium on Ruthenium surfaces : a theoretical study |
2015 |
The journal of physical chemistry: C : nanomaterials and interfaces |
119 |
10 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Defects in amorphous semiconductors : the case of amorphous indium gallium zinc oxide |
2018 |
Physical review applied |
9 |
7 |
UA library record; WoS full record; WoS citing articles |
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Phung, Q.M.; Vancoillie, S.; Pourtois, G.; Swerts, J.; Pierloot, K.; Delabie, A. |
Atomic layer deposition of ruthenium on a titanium nitride surface : a density functional theory study |
2013 |
The journal of physical chemistry: C : nanomaterials and interfaces |
117 |
6 |
UA library record; WoS full record; WoS citing articles |
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Scalise, E.; Houssa, M.; Cinquanta, E.; Grazianetti, C.; van den Broek, B.; Pourtois, G.; Stesmans, A.; Fanciulli, M.; Molle, A. |
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates |
2014 |
2D materials |
1 |
49 |
UA library record; WoS full record; WoS citing articles |
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Khalilov, U.; Pourtois, G.; Huygh, S.; van Duin, A.C.T.; Neyts, E.C.; Bogaerts, A. |
New mechanism for oxidation of native silicon oxide |
2013 |
The journal of physical chemistry: C : nanomaterials and interfaces |
117 |
24 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
2013 |
ECS solid state letters |
2 |
12 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Garbin, D.; Opsomer, K.; Avasarala, N.S.; Devulder, W.; Shlyakhov, I.; Keukelier, J.; Donadio, G.L.; Witters, T.; Kundu, S.; Govoreanu, B.; Goux, L.; Detavernier, C.; Afanas'ev, V.; Kar, G.S.; Pourtois, G. |
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles |
2020 |
Physica Status Solidi-Rapid Research Letters |
|
3 |
UA library record; WoS full record; WoS citing articles |
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Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures |
2018 |
ECS journal of solid state science and technology |
7 |
5 |
UA library record; WoS full record; WoS citing articles |
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Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures |
2017 |
Semiconductor Process Integration 10 |
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UA library record; WoS full record |
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Clima, S.; Kaczer, B.; Govoreanu, B.; Popovici, M.; Swerts, J.; Verhulst, A.S.; Jurczak, M.; De Gendt, S.; Pourtois, G. |
Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations |
2013 |
IEEE electron device letters |
34 |
3 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Govoreanu, B.; Jurczak, M.; Pourtois, G. |
HfOx as RRAM material : first principles insights on the working principles |
2014 |
Microelectronic engineering |
120 |
22 |
UA library record; WoS full record; WoS citing articles |
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Sankaran, K.; Swerts, J.; Carpenter, R.; Couet, S.; Garello, K.; Evans, R.F.L.; Rao, S.; Kim, W.; Kundu, S.; Crotti, D.; Kar, G.S.; Pourtois, G. |
Evidence of magnetostrictive effects on STT-MRAM performance by atomistic and spin modeling |
2018 |
2018 Ieee International Electron Devices Meeting (iedm) |
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UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K. |
Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
9 |
UA library record; WoS full record; WoS citing articles |
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Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. |
Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice |
2020 |
Journal Of Physical Chemistry C |
124 |
2 |
UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. |
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications |
2018 |
ECS journal of solid state science and technology |
7 |
4 |
UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; |
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films |
2016 |
Applied physics letters |
108 |
9 |
UA library record; WoS full record; WoS citing articles |
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Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. |
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2018 |
ECS journal of solid state science and technology |
7 |
2 |
UA library record; WoS full record; WoS citing articles |
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Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. |
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2017 |
Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar |
|
1 |
UA library record; WoS full record; WoS citing articles |
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Chen, Y.Y.; Pourtois, G.; Adelmann, C.; Goux, L.; Govoreanu, B.; Degreave, R.; Jurczak, M.; Kittl, J.A.; Groeseneken, G.; Wouters, D.J. |
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device |
2012 |
Applied physics letters |
100 |
29 |
UA library record; WoS full record; WoS citing articles |
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Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M. |
Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems |
2012 |
ECS solid state letters |
1 |
11 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor |
2017 |
Journal of physics : condensed matter |
29 |
5 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. |
On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study |
2017 |
Journal of applied physics |
121 |
|
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K. |
Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates |
2012 |
Journal of vacuum science and technology: A: vacuum surfaces and films |
30 |
41 |
UA library record; WoS full record; WoS citing articles |
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Mees, M.J.; Pourtois, G.; Rosciano, F.; Put, B.; Vereecken, P.M.; Stesmans, A. |
First-principles material modeling of solid-state electrolytes with the spinel structure |
2014 |
Physical chemistry, chemical physics |
|
8 |
UA library record; WoS full record; WoS citing articles |
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