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	Author	Title	Year	Publication	Volume	Times cited	Additional Links	Links
	Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G.	Impact of layer alignment on the behavior of MoS₂-ZrS₂ tunnel field-effect transistors : an ab initio study	2017	Physical review applied	8	6	UA library record; WoS full record; WoS citing articles
	Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M.	On the electrostatic control achieved in transistors based on multilayered MoS₂ : a first-principles study	2017	Journal of applied physics	121		UA library record; WoS full record; WoS citing articles

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