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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Vereecke, G.; De Coster, H.; Van Alphen, S.; Carolan, P.; Bender, H.; Willems, K.; Ragnarsson, L.-A.; Van Dorpe, P.; Horiguchi, N.; Holsteyns, F. |
Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors |
2018 |
Microelectronic engineering |
200 |
|
UA library record; WoS full record; WoS citing articles |
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Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. |
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2018 |
ECS journal of solid state science and technology |
7 |
2 |
UA library record; WoS full record; WoS citing articles |
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Yu, H.; Schaekers, M.; Chew, S.A.; Eyeraert, J.-L.; Dabral, A.; Pourtois, G.; Horiguchi, N.; Mocuta, D.; Collaert, N.; De Meyer, K. |
Titanium (germano-)silicides featuring 10-9 Ω.cm2 contact resistivity and improved compatibility to advanced CMOS technology |
2018 |
2018 18th International Workshop On Junction Technology (iwjt) |
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UA library record; WoS full record |
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Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. |
Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2017 |
Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar |
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1 |
UA library record; WoS full record; WoS citing articles |
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