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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Heyne, M.H.; de Marneffe, J.-F.; Nuytten, T.; Meersschaut, J.; Conard, T.; Caymax, M.; Radu, I.; Delabie, A.; Neyts, E.C.; De Gendt, S. |
The conversion mechanism of amorphous silicon to stoichiometric WS2 |
2018 |
Journal of materials chemistry C : materials for optical and electronic devices |
6 |
4 |
UA library record; WoS full record; WoS citing articles |
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Heyne, M.H.; Chiappe, D.; Meersschaut, J.; Nuytten, T.; Conard, T.; Bender, H.; Huyghebaert, C.; Radu, I.P.; Caymax, M.; de Marneffe, J.F.; Neyts, E.C.; De Gendt, S.; |
Multilayer MoS2 growth by metal and metal oxide sulfurization |
2016 |
Journal of materials chemistry C : materials for optical and electronic devices |
4 |
|
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
2013 |
ECS solid state letters |
2 |
12 |
UA library record; WoS full record; WoS citing articles |
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Ignatova, V.A.; Möller, W.; Conard, T.; Vandervorst, W.; Gijbels, R. |
Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation |
2005 |
Applied physics A : materials science & processing |
81 |
4 |
UA library record; WoS full record; WoS citing articles |
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Ignatova, V.A.; Conard, T.; Möller, W.; Vandervorst, W.; Gijbels, R. |
Depth profiling of ZrO2/SiO2/Si stacks : a TOF-SIMS and computer simulation study |
2004 |
Applied surface science |
231/232 |
4 |
UA library record; WoS full record; WoS citing articles |
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de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks |
2003 |
Applied surface science |
203 |
15 |
UA library record; WoS full record; WoS citing articles |
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de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding |
2000 |
Surface and interface analysis |
29 |
4 |
UA library record; WoS full record; WoS citing articles |
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de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on wafer surfaces |
2000 |
Journal of the electrochemical society |
147 |
14 |
UA library record; WoS full record; WoS citing articles |
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Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. |
Interaction of a Ti-capped Co thin film with Si3N4 |
2000 |
Applied physics letters |
77 |
3 |
UA library record; WoS full record; WoS citing articles |
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de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
Study of oxynitrides with dual beam TOF-SIMS |
2000 |
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UA library record |
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de Witte, H.; Conard, T.; Sporken, R.; Gouttebaron, R.; Magnee, R.; Vandervorst, W.; Caudano, R.; Gijbels, R. |
XPS study of ion induced oxidation of silicon with and without oxygen flooding |
2000 |
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UA library record |
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Conard, T.; de Witte, H.; Loo, R.; Verheyen, P.; Vandervorst, W.; Caymax, M.; Gijbels, R. |
XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers |
1999 |
Thin solid films : an international journal on the science and technology of thin and thick films |
343/344 |
1 |
UA library record; WoS full record; WoS citing articles |
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de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution |
1999 |
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UA library record; WoS full record; |
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