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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Raymenants, E.; Bultynck, O.; Wan, D.; Devolder, T.; Garello, K.; Souriau, L.; Thiam, A.; Tsvetanova, D.; Canvel, Y.; Nikonov, D.E.; Young, I.A.; Heyns, M.; Sorée, B.; Asselberghs, I.; Radu, I.; Couet, S.; Nguyen, V.D. Nanoscale domain wall devices with magnetic tunnel junction read and write 2021 Nature Electronics 4 UA library record; WoS full record; WoS citing articles url doi
Devolder, T.; Bultynck, O.; Bouquin, P.; Nguyen, V.D.; Rao, S.; Wan, D.; Sorée, B.; Radu, I.P.; Kar, G.S.; Couet, S. Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions 2020 Physical Review B 102 UA library record; WoS full record; WoS citing articles url doi
Heyne, M.H.; Marinov, D.; Braithwaite, N.; Goodyear, A.; de Marneffe, J.-F.; Cooke, M.; Radu, I.; Neyts, E.C.; De Gendt, S. A route towards the fabrication of 2D heterostructures using atomic layer etching combined with selective conversion 2019 2D materials 6 UA library record; WoS full record; WoS citing articles pdf doi
Heyne, M.H.; de Marneffe, J.-F.; Radu, I.; Neyts, E.C.; De Gendt, S. Thermal recrystallization of short-range ordered WS2 films 2018 Journal of vacuum science and technology: A: vacuum surfaces and films 36 2 UA library record; WoS full record; WoS citing articles pdf doi
Heyne, M.H.; de Marneffe, J.-F.; Nuytten, T.; Meersschaut, J.; Conard, T.; Caymax, M.; Radu, I.; Delabie, A.; Neyts, E.C.; De Gendt, S. The conversion mechanism of amorphous silicon to stoichiometric WS2 2018 Journal of materials chemistry C : materials for optical and electronic devices 6 4 UA library record; WoS full record; WoS citing articles pdf url doi
Dutta, S.; Zografos, O.; Gurunarayanan, S.; Radu, I.; Sorée, B.; Catthoor, F.; Naeemi, A. Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computation 2017 Scientific reports 7 2 UA library record; WoS full record; WoS citing articles url doi
Duflou, R.; Ciubotaru, F.; Vaysset, A.; Heyns, M.; Sorée, B.; Radu, I.P.; Adelmann, C. Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides 2017 Applied physics letters 111 UA library record; WoS full record; WoS citing articles url doi
Zografos, O.; Manfrini, M.; Vaysset, A.; Sorée, B.; Ciubotaru, F.; Adelmann, C.; Lauwereins, R.; Raghavan, P.; Radu, I.P. Exchange-driven magnetic logic 2017 Scientific reports 7 7 UA library record; WoS full record; WoS citing articles url doi
Lu, A.K.A.; Houssa, M.; Radu, I.P.; Pourtois, G. Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures : a first-principles study 2017 ACS applied materials and interfaces 9 10 UA library record; WoS full record; WoS citing articles pdf doi
Zografos, O.; Dutta, S.; Manfrini, M.; Vaysset, A.; Sorée, B.; Naeemi, A.; Raghavan, P.; Lauwereins, R.; Radu, I.P. Non-volatile spin wave majority gate at the nanoscale 2017 AIP advances T2 – 61st Annual Conference on Magnetism and Magnetic Materials (MMM), OCT 31-NOV 04, 2016, New Orleans, LA 7 13 UA library record; WoS full record; WoS citing articles pdf doi
Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study 2017 Journal of applied physics 121 UA library record; WoS full record; WoS citing articles url doi
Heyne, M.H.; de Marneffe, J.-F.; Delabie, A.; Caymax, M.; Neyts, E.C.; Radu, I.; Huyghebaert, C.; De Gendt, S. Two-dimensional WS2 nanoribbon deposition by conversion of pre-patterned amorphous silicon 2017 Nanotechnology 28 13 UA library record; WoS full record; WoS citing articles pdf url doi
Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study 2016 Applied physics letters 108 4 UA library record; WoS full record; WoS citing articles doi
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors 2016 Applied physics letters 108 13 UA library record; WoS full record; WoS citing articles doi
Heyne, M.H.; Chiappe, D.; Meersschaut, J.; Nuytten, T.; Conard, T.; Bender, H.; Huyghebaert, C.; Radu, I.P.; Caymax, M.; de Marneffe, J.F.; Neyts, E.C.; De Gendt, S.; Multilayer MoS2 growth by metal and metal oxide sulfurization 2016 Journal of materials chemistry C : materials for optical and electronic devices 4 UA library record; WoS full record; WoS citing articles doi
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