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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study 2016 Applied physics letters 108 4 UA library record; WoS full record; WoS citing articles doi
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