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Author |
Title |
Year |
Publication  |
Volume |
Times cited |
Additional Links |
Links |
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Toledano-Luque, M.; Matagne, P.; Sibaja-Hernandez, A.; Chiarella, T.; Ragnarsson, L.-A.; Sorée, B.; Cho, M.; Mocuta, A.; Thean, A. |
Superior reliability of junctionless pFinFETs by reduced oxide electric field |
2014 |
IEEE electron device letters |
35 |
13 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. |
Temperature-dependent modeling and characterization of through-silicon via capacitance |
2011 |
IEEE electron device letters |
32 |
27 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Uniform strain in heterostructure tunnel field-effect transistors |
2016 |
IEEE electron device letters |
37 |
17 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Contino, A.; Ciofi, I.; Wu, X.; Asselberghs, I.; Celano, U.; Wilson, C.J.; Tokei, Z.; Groeseneken, G.; Sorée, B. |
Modeling of edge scattering in graphene interconnects |
2018 |
IEEE electron device letters |
39 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bizindavyi, J.; Verhulst, A.S.; Verreck, D.; Sorée, B.; Groeseneken, G. |
Large variation in temperature dependence of band-to-band tunneling current in tunnel devices |
2019 |
IEEE electron device letters |
40 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. |
Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes |
2018 |
IEEE journal of the Electron Devices Society |
6 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Direct and indirect band-to-band tunneling in germanium-based TFETs |
2012 |
IEEE transactions on electron devices |
59 |
212 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. |
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets |
2012 |
IEEE transactions on electron devices |
59 |
72 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. |
Signature of ballistic band-tail tunneling current in tunnel FET |
2020 |
Ieee Transactions On Electron Devices |
67 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Moors, K.; Sorée, B.; Magnus, W. |
Modeling and tackling resistivity scaling in metal nanowires |
2015 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC |
|
|
UA library record; WoS full record |
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Reyntjens, P.D.; Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab-initio study of magnetically intercalated Tungsten diselenide |
2020 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 |
|
|
UA library record; WoS full record |
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects |
2018 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX |
|
|
UA library record; WoS full record; WoS citing articles |
|
|
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Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. |
Ab initio modeling of few-layer dilute magnetic semiconductors |
2021 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX |
|
|
UA library record; WoS full record |
|
|
|
Deylgat, E.; Chen, E.; Sorée, B.; Vandenberghe, W.G. |
Quantum transport study of contact resistance of edge- and top-contacted two-dimensional materials |
2023 |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2023, Kobe, Japan |
|
|
UA library record; WoS full record |
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|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
2009 |
Journal of applied physics |
106 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach |
2011 |
Journal of applied physics |
109 |
41 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; |
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models |
2014 |
Journal of applied physics |
115 |
34 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. |
A method to calculate tunneling leakage currents in silicon inversion layers |
2006 |
Journal of applied physics |
100 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. |
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor |
2010 |
Journal Of Applied Physics |
107 |
150 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a cylindrical nanowire transistor |
2013 |
Journal of applied physics |
113 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
2009 |
Journal of applied physics |
106 |
29 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. |
Quantum mechanical solver for confined heterostructure tunnel field-effect transistors |
2014 |
Journal of applied physics |
115 |
15 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor |
2004 |
Journal of applied physics |
96 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor |
2003 |
Journal of applied physics |
93 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. |
Resistivity scaling and electron relaxation times in metallic nanowires |
2014 |
Journal of applied physics |
116 |
17 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. |
Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation |
2014 |
Journal of applied physics |
115 |
26 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. |
Zener tunneling in semiconductors under nonuniform electric fields |
2010 |
Journal of applied physics |
107 |
22 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. |
Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors |
2015 |
Journal of applied physics |
118 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Inter-ribbon tunneling in graphene: An atomistic Bardeen approach |
2016 |
Journal of applied physics |
119 |
6 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Moors, K.; Sorée, B.; Magnus, W. |
Modeling surface roughness scattering in metallic nanowires |
2015 |
Journal of applied physics |
118 |
11 |
UA library record; WoS full record; WoS citing articles |
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