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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G. |
Image-force barrier lowering in top- and side-contacted two-dimensional materials |
2022 |
Solid state electronics |
198 |
|
UA library record; WoS full record |
|
|
|
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Inter-ribbon tunneling in graphene: An atomistic Bardeen approach |
2016 |
Journal of applied physics |
119 |
6 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.; Fischetti, M.V. |
Modeling of inter-ribbon tunneling in graphene |
2015 |
18th International Workshop On Computational Electronics (iwce 2015) |
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UA library record; WoS full record |
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Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. |
Figure of merit for and identification of sub-60 mV/decade devices |
2013 |
Applied physics letters |
102 |
64 |
UA library record; WoS full record; WoS citing articles |
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|
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Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach |
2011 |
Journal of applied physics |
109 |
41 |
UA library record; WoS full record; WoS citing articles |
|
|
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Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
|
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O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. |
Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections |
2010 |
Applied Physics Letters |
96 |
26 |
UA library record; WoS full record; WoS citing articles |
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Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
2009 |
Journal of applied physics |
106 |
29 |
UA library record; WoS full record; WoS citing articles |
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