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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
|
|
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. |
Can p-channel tunnel field-effect transistors perform as good as n-channel? |
2014 |
Applied physics letters |
105 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
2009 |
Journal of applied physics |
106 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Tunneling-lifetime model for metal-oxide-semiconductor structures |
2009 |
Physical review : B : solid state |
80 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; de Meyer, K.; Meuris, M.; Heyns, M. |
General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors |
2008 |
Journal of computational electronics |
7 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Lujan, G.S.; Magnus, W.; Soree, B.; Pourghaderi, M.A.; Veloso, A.; van Dal, M.J.H.; Lauwers, A.; Kubicek, S.; De Gendt, S.; Heyns, M.; De Meyer, K.; |
A new method to calculate leakage current and its applications for sub-45nm MOSFETs |
2005 |
Solid-State Device Research (ESSDERC), European Conference
T2 – ESSDERC 2005 : proceedings of 35th European Solid-State Device Research Conference, September 12-16, 2005, Grenoble, France |
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|
UA library record; WoS full record |
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