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Author |
Moors, K.; Sorée, B.; Magnus, W. |
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Title |
Modeling and tackling resistivity scaling in metal nanowires |
Type |
P1 Proceeding |
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Year  |
2015 |
Publication |
International Conference on Simulation of Semiconductor Processes and Devices : [proceedings]
T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC |
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Pages |
222-225 |
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Keywords |
P1 Proceeding; Condensed Matter Theory (CMT) |
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Abstract |
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nanowire to its resistivity, the picture appears to be more complicated due to quantum-mechanical scattering and quantization effects, especially for surface roughness scattering. |
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Publisher |
Ieee |
Place of Publication |
New york |
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Wos |
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Publication Date |
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Series Title |
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Abbreviated Series Title |
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Edition |
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ISSN |
978-1-4673-7860-4 |
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Additional Links |
UA library record; WoS full record |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:135046 |
Serial |
4205 |
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