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Author |
Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. |
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Title |
Temperature-dependent modeling and characterization of through-silicon via capacitance |
Type |
A1 Journal article |
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Year  |
2011 |
Publication |
IEEE electron device letters |
Abbreviated Journal |
Ieee Electr Device L |
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Volume |
32 |
Issue |
4 |
Pages |
563-565 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
A semianalytical model of the through-silicon via (TSV) capacitance for elevated operating temperatures is derived and verified with electrical measurements. The effect of temperature on the increase in TSV capacitance over different technology parameters is explored, and it is shown that higher oxide thickness reduces the impact of temperature rise on TSV capacitance, while with low doped substrates, which are instrumental for reducing the TSV capacitance, the sensitivity of TSV capacitance to temperature is large and cannot be ignored. |
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Wos |
000288664800045 |
Publication Date |
2011-03-04 |
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Series Volume |
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Edition |
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ISSN |
0741-3106;1558-0563; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.048 |
Times cited |
27 |
Open Access |
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Notes |
; ; |
Approved |
Most recent IF: 3.048; 2011 IF: 2.849 |
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Call Number |
UA @ lucian @ c:irua:89402 |
Serial |
3498 |
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| Permanent link to this record |
