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Author |
Title |
Year |
Publication |
Volume |
Times cited  |
Additional Links |
Links |
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Clima, S.; Kaczer, B.; Govoreanu, B.; Popovici, M.; Swerts, J.; Verhulst, A.S.; Jurczak, M.; De Gendt, S.; Pourtois, G. |
Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations |
2013 |
IEEE electron device letters |
34 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Schoeters, B.; Neyts, E.C.; Khalilov, U.; Pourtois, G.; Partoens, B. |
Stability of Si epoxide defects in Si nanowires : a mixed reactive force field/DFT study |
2013 |
Physical chemistry, chemical physics |
15 |
3 |
UA library record; WoS full record; WoS citing articles |
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|
|
Schoeters, B.; Leenaerts, O.; Pourtois, G.; Partoens, B. |
Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires |
2015 |
Journal of applied physics |
118 |
3 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Garbin, D.; Opsomer, K.; Avasarala, N.S.; Devulder, W.; Shlyakhov, I.; Keukelier, J.; Donadio, G.L.; Witters, T.; Kundu, S.; Govoreanu, B.; Goux, L.; Detavernier, C.; Afanas'ev, V.; Kar, G.S.; Pourtois, G. |
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles |
2020 |
Physica Status Solidi-Rapid Research Letters |
|
3 |
UA library record; WoS full record; WoS citing articles |
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Sankaran, K.; Swerts, J.; Couet, S.; Stokbro, K.; Pourtois, G. |
Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta vertical bar CoFe vertical bar MgO magnetic tunnel junctions : a first-principles study |
2016 |
Physical review B |
94 |
4 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. |
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study |
2016 |
Applied physics letters |
108 |
4 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO |
2018 |
Journal of applied physics |
123 |
4 |
UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. |
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications |
2018 |
ECS journal of solid state science and technology |
7 |
4 |
UA library record; WoS full record; WoS citing articles |
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Phung, Q.M.; Vancoillie, S.; Delabie, A.; Pourtois, G.; Pierloot, K. |
Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition : a comparative study of dissociation enthalpies |
2012 |
Theoretical chemistry accounts : theory, computation, and modeling |
131 |
5 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor |
2017 |
Journal of physics : condensed matter |
29 |
5 |
UA library record; WoS full record; WoS citing articles |
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Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures |
2018 |
ECS journal of solid state science and technology |
7 |
5 |
UA library record; WoS full record; WoS citing articles |
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Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W. |
Evolution of phosphorus-vacancy clusters in epitaxial germanium |
2019 |
Journal of applied physics |
125 |
5 |
UA library record; WoS full record; WoS citing articles |
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Phung, Q.M.; Vancoillie, S.; Pourtois, G.; Swerts, J.; Pierloot, K.; Delabie, A. |
Atomic layer deposition of ruthenium on a titanium nitride surface : a density functional theory study |
2013 |
The journal of physical chemistry: C : nanomaterials and interfaces |
117 |
6 |
UA library record; WoS full record; WoS citing articles |
|
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Nishio, K.; Lu, A.K.A.; Pourtois, G. |
Low-strain Si/O superlattices with tunable electronic properties : ab initio calculations |
2015 |
Physical review : B : condensed matter and materials physics |
91 |
6 |
UA library record; WoS full record; WoS citing articles |
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Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Theoretical study of silicene and germanene |
2013 |
Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 |
|
6 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. |
Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study |
2017 |
Physical review applied |
8 |
6 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Defects in amorphous semiconductors : the case of amorphous indium gallium zinc oxide |
2018 |
Physical review applied |
9 |
7 |
UA library record; WoS full record; WoS citing articles |
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Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. |
Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference |
2008 |
Physical review : B : condensed matter and materials physics |
77 |
8 |
UA library record; WoS full record; WoS citing articles |
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Mees, M.J.; Pourtois, G.; Rosciano, F.; Put, B.; Vereecken, P.M.; Stesmans, A. |
First-principles material modeling of solid-state electrolytes with the spinel structure |
2014 |
Physical chemistry, chemical physics |
|
8 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Bhoolokam, A.; Pourtois, G.; Genoe, J.; Heremans, P. |
Oxygen vacancies effects in a-IGZO : formation mechanisms, hysteresis, and negative bias stress effects |
2017 |
Physica status solidi : A : applications and materials science |
214 |
8 |
UA library record; WoS full record; WoS citing articles |
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van den Broek, B.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Current-voltage characteristics of armchair Sn nanoribbons |
2014 |
Physica status solidi: rapid research letters |
8 |
9 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K. |
Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
9 |
UA library record; WoS full record; WoS citing articles |
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Cornil, D.; Li, H.; Wood, C.; Pourtois, G.; Bredas, J.-L.; Cornil, J. |
Work-function modification of Au and Ag surfaces upon deposition of self-assembled monolayers : influence of the choice of the theoretical approach and the thiol decomposition scheme |
2013 |
ChemPhysChem : a European journal of chemical physics and physical chemistry |
14 |
9 |
UA library record; WoS full record; WoS citing articles |
|
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; |
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films |
2016 |
Applied physics letters |
108 |
9 |
UA library record; WoS full record; WoS citing articles |
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Quan Manh, P.; Pourtois, G.; Swerts, J.; Pierloot, K.; Delabie, A. |
Atomic layer deposition of Ruthenium on Ruthenium surfaces : a theoretical study |
2015 |
The journal of physical chemistry: C : nanomaterials and interfaces |
119 |
10 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Lu, A.K.A.; Houssa, M.; Radu, I.P.; Pourtois, G. |
Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures : a first-principles study |
2017 |
ACS applied materials and interfaces |
9 |
10 |
UA library record; WoS full record; WoS citing articles |
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|
Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M. |
Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems |
2012 |
ECS solid state letters |
1 |
11 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
2013 |
ECS solid state letters |
2 |
12 |
UA library record; WoS full record; WoS citing articles |
|
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Sankaran, K.; Pourtois, G.; Degraeve, R.; Zahid, M.B.; Rignanese, G.-M.; Van Houdt, J. |
First-principles modeling of intrinsic and extrinsic defects in \gamma-Al2O3 |
2010 |
Applied physics letters |
97 |
12 |
UA library record; WoS full record; WoS citing articles |
|
|
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Neyts, E.; Maeyens, A.; Pourtois, G.; Bogaerts, A. |
A density-functional theory simulation of the formation of Ni-doped fullerenes by ion implantation |
2011 |
Carbon |
49 |
13 |
UA library record; WoS full record; WoS citing articles |
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