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Author |
Title |
Year |
Publication  |
Volume |
Times cited |
Additional Links |
Links |
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Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. |
Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations |
2018 |
ECS journal of solid state science and technology |
7 |
2 |
UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. |
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications |
2018 |
ECS journal of solid state science and technology |
7 |
4 |
UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. |
Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers |
2019 |
ECS journal of solid state science and technology |
8 |
|
UA library record; WoS full record |
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Vohra, A.; Makkonen, I.; Pourtois, G.; Slotte, J.; Porret, C.; Rosseel, E.; Khanam, A.; Tirrito, M.; Douhard, B.; Loo, R.; Vandervorst, W. |
Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx |
2020 |
Ecs Journal Of Solid State Science And Technology |
9 |
|
UA library record; WoS full record; WoS citing articles |
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Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M. |
Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems |
2012 |
ECS solid state letters |
1 |
11 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
2013 |
ECS solid state letters |
2 |
12 |
UA library record; WoS full record; WoS citing articles |
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Sorée, B.; Magnus, W.; Szepieniec, M.; Vandenbreghe, W.; Verhulst, A.; Pourtois, G.; Groeseneken, G.; de Gendt, S.; Heyns, M. |
Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET |
2010 |
ECS transactions |
28 |
|
UA library record; WoS full record; WoS citing articles |
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Houssa, M.; van den Broek, B.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Theoretical study of silicene and germanene |
2013 |
Graphene, Ge/iii-v, And Emerging Materials For Post Cmos Applications 5 |
|
6 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Kaczer, B.; Govoreanu, B.; Popovici, M.; Swerts, J.; Verhulst, A.S.; Jurczak, M.; De Gendt, S.; Pourtois, G. |
Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations |
2013 |
IEEE electron device letters |
34 |
3 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Chen, Y.Y.; Fantini, A.; Goux, L.; Degraeve, R.; Govoreanu, B.; Pourtois, G.; Jurczak, M. |
Intrinsic tailing of resistive states distributions in amorphous <tex>HfOx </tex> and TaOx based resistive random access memories |
2015 |
IEEE electron device letters |
36 |
33 |
UA library record; WoS full record; WoS citing articles |
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Schoeters, B.; Leenaerts, O.; Pourtois, G.; Partoens, B. |
Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires |
2015 |
Journal of applied physics |
118 |
3 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Chen, Y.Y.; Chen, C.Y.; Goux, L.; Govoreanu, B.; Degraeve, R.; Fantini, A.; Jurczak, M.; Pourtois, G. |
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device |
2016 |
Journal of applied physics |
119 |
17 |
UA library record; WoS full record; WoS citing articles |
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Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. |
Thickness dependence of the resistivity of platinum-group metal thin films |
2017 |
Journal of applied physics |
122 |
42 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO |
2018 |
Journal of applied physics |
123 |
4 |
UA library record; WoS full record; WoS citing articles |
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Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W. |
Evolution of phosphorus-vacancy clusters in epitaxial germanium |
2019 |
Journal of applied physics |
125 |
5 |
UA library record; WoS full record; WoS citing articles |
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Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Porret, C.; Loo, R.; Vandervorst, W. |
Heavily phosphorus doped germanium : strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation |
2019 |
Journal of applied physics |
125 |
1 |
UA library record; WoS full record; WoS citing articles |
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Khanam, A.; Vohra, A.; Slotte, J.; Makkonen, I.; Loo, R.; Pourtois, G.; Vandervorst, W. |
A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-XSnx |
2020 |
Journal Of Applied Physics |
127 |
|
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. |
On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study |
2017 |
Journal of applied physics |
121 |
|
UA library record; WoS full record; WoS citing articles |
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Neyts, E.C.; Thijsse, B.J.; Mees, M.J.; Bal, K.M.; Pourtois, G. |
Establishing uniform acceptance in force biased Monte Carlo simulations |
2012 |
Journal of chemical theory and computation |
8 |
20 |
UA library record; WoS full record; WoS citing articles |
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Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Belmonte, A.; Degraeve, R.; Fantini, A.; Goux, L.; Govoreanu, B.; Jurczak, M.; Ota, K.; Redolfi, A.; Kar, G.S.; Pourtois, G. |
Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories |
2017 |
Journal of computational electronics |
16 |
2 |
UA library record; WoS full record; WoS citing articles |
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Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. |
Structural characterization of SnS crystals formed by chemical vapour deposition |
2017 |
Journal of microscopy
T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND |
268 |
2 |
UA library record; WoS full record; WoS citing articles |
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Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. |
Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice |
2020 |
Journal Of Physical Chemistry C |
124 |
2 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor |
2017 |
Journal of physics : condensed matter |
29 |
5 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor : structure, tail states and strain effects |
2015 |
Journal of physics: D: applied physics |
48 |
23 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K. |
Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates |
2012 |
Journal of vacuum science and technology: A: vacuum surfaces and films |
30 |
41 |
UA library record; WoS full record; WoS citing articles |
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Hardy, A.; Van Elshocht, S.; De Dobbelaere, C.; Hadermann, J.; Pourtois, G.; De Gendt, S.; Afanas'ev, V.V.; Van Bael, M.K. |
Properties and thermal stability of solution processed ultrathin, high-k bismuth titanate (Bi2Ti2O7) films |
2012 |
Materials research bulletin |
47 |
|
UA library record; WoS full record; WoS citing articles |
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Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. |
First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts |
2005 |
Microelectronic engineering |
80 |
31 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Govoreanu, B.; Jurczak, M.; Pourtois, G. |
HfOx as RRAM material : first principles insights on the working principles |
2014 |
Microelectronic engineering |
120 |
22 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G. |
Material relaxation in chalcogenide OTS SELECTOR materials |
2019 |
Microelectronic engineering |
215 |
1 |
UA library record; WoS full record; WoS citing articles |
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