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  Author Title Year Publication Volume Times cited Additional Links Links
Papp, G.; Peeters, F.M. Magnetoresistance in a hybrid ferromagnetic/semiconductor device 2010 Journal of applied physics 107 10 UA library record; WoS full record; WoS citing articles doi
Carrillo-Nuñez, H.; Magnus, W.; Peeters, F.M. A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus 2010 Journal of applied physics 108 7 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. Zener tunneling in semiconductors under nonuniform electric fields 2010 Journal of applied physics 107 22 UA library record; WoS full record; WoS citing articles doi
Castelano, L.K.; Hai, G.Q.; Partoens, B.; Peeters, F.M. Artificial molecular quantum rings under magnetic field influence 2009 Journal of applied physics 106 5 UA library record; WoS full record; WoS citing articles doi
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology 2009 Journal of applied physics 106 3 UA library record; WoS full record; WoS citing articles doi
Ariskin, D.A.; Schweigert, I.V.; Alexandrov, A.L.; Bogaerts, A.; Peeters, F.M. Modeling of chemical processes in the low pressure capacitive radio frequency discharges in a mixture of Ar/C2H2 2009 Journal of applied physics 105 21 UA library record; WoS full record; WoS citing articles doi
Dhong, H.M.; Zhang, J.; Peeters, F.M.; Xu, W. Optical conductance and transmission in bilayer graphene 2009 Journal of applied physics 106 11 UA library record; WoS full record; WoS citing articles doi
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers 2009 Journal of applied physics 106 29 UA library record; WoS full record; WoS citing articles doi
Hao, Y.L.; Peeters, F.M. Micro-Hall bar as a sensor to detect the interaction of nanoscale ferromagnetic disks and columns 2007 Journal of applied physics 101 UA library record; WoS full record url doi
Papp, G.; Peeters, F.M. Resistance maps for a submicron Hall electrosensor in the diffusive regime 2007 Journal of applied physics 101 7 UA library record; WoS full record; WoS citing articles url doi
Papp, G.; Peeters, F.M. Resistance maps from local probing of a ballistic mesoscopic Hall bar 2007 Journal of applied physics 101 5 UA library record; WoS full record; WoS citing articles url doi
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. A method to calculate tunneling leakage currents in silicon inversion layers 2006 Journal of applied physics 100 1 UA library record; WoS full record; WoS citing articles doi
Papp, G.; Peeters, F.M. Tunable giant magnetoresistance with magnetic barriers 2006 Journal of applied physics 100 49 UA library record; WoS full record; WoS citing articles doi
Papp, G.; Borza, S.; Peeters, F.M. Spin transport in a Mn-doped ZnSe asymmetric tunnel structure 2005 Journal of applied physics 97 26 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor 2004 Journal of applied physics 96 14 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor 2003 Journal of applied physics 93 16 UA library record; WoS full record; WoS citing articles doi
Cornelissens, Y.G.; Peeters, F.M. Response function of a Hall magnetosensor in the diffusive regime 2002 Journal of applied physics 92 24 UA library record; WoS full record; WoS citing articles doi
Tadić, M.; Peeters, F.M.; Janssens, K.L.; Korkusinski, M.; Hawrylak, P. Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots 2002 Journal of applied physics 92 73 UA library record; WoS full record; WoS citing articles url doi
Chang, K.; Peeters, F.M. Asymmetric stark shifts in InGaAs/GaAs near-surface quantum wells: the image charge effect 2000 Journal of applied physics 88 20 UA library record; WoS full record; WoS citing articles doi
Reijniers, J.; Peeters, F.M. Diffusive transport in the hybrid Hall effect device 2000 Journal of applied physics 87 12 UA library record; WoS full record; WoS citing articles doi
Sarmadian, N.; Saniz, R.; Partoens, B.; Lamoen, D. First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides 2016 Journal of applied physics 120 29 UA library record; WoS full record; WoS citing articles pdf url doi
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. Inter-ribbon tunneling in graphene: An atomistic Bardeen approach 2016 Journal of applied physics 119 6 UA library record; WoS full record; WoS citing articles url doi
Andrikopoulos, D.; Sorée, B.; De Boeck, J. Skyrmion-induced bound states on the surface of three-dimensional topological insulators 2016 Journal of applied physics 119 8 UA library record; WoS full record; WoS citing articles url doi
Frota, D.A.; Chaves, A.; Ferreira, W.P.; Farias, G.A.; Milošević, M.V. Superconductor-ferromagnet bilayer under external drive : the role of vortex-antivortex matter 2016 Journal of applied physics 119 4 UA library record; WoS full record; WoS citing articles doi
Fatima; Oguz, I.C.; Çakir, D.; Hossain, S.; Mohottige, R.; Gulseren, O.; Oncel, N. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface 2016 Journal of applied physics 120 7 UA library record; WoS full record; WoS citing articles url doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides 2016 Journal of applied physics 120 6 UA library record; WoS full record; WoS citing articles url doi
Torun, E.; Sahin, H.; Cahangirov, S.; Rubio, A.; Peeters, F.M. Anisotropic electronic, mechanical, and optical properties of monolayer WTe2 2016 Journal of applied physics 119 62 UA library record; WoS full record; WoS citing articles url doi
Berdiyorov, G.R.; Mortazavi, B.; Ahzi, S.; Peeters, F.M.; Khraisheh, M.K. Effect of straining graphene on nanopore creation using Si cluster bombardment: A reactive atomistic investigation 2016 Journal of applied physics 120 10 UA library record; WoS full record; WoS citing articles url doi
Mirzakhani, M.; Zarenia, M.; Peeters, F.M. Edge states in gated bilayer-monolayer graphene ribbons and bilayer domain walls 2018 Journal of applied physics 123 3 UA library record; WoS full record; WoS citing articles pdf doi
Chen, Q.; Wang, W.; Peeters, F.M. Magneto-polarons in monolayer transition-metal dichalcogenides 2018 Journal of applied physics 123 19 UA library record; WoS full record; WoS citing articles pdf doi
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