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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors 2015 Journal of applied physics 118 9 UA library record; WoS full record; WoS citing articles doi
Moors, K.; Sorée, B.; Magnus, W. Modeling surface roughness scattering in metallic nanowires 2015 Journal of applied physics 118 11 UA library record; WoS full record; WoS citing articles url doi
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B. An envelope function formalism for lattice-matched heterostructures 2015 Physica: B : condensed matter 470-471 5 UA library record; WoS full record; WoS citing articles doi
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.; Fischetti, M.V. Modeling of inter-ribbon tunneling in graphene 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url
Moors, K.; Sorée, B.; Magnus, W. Analytic solution of Ando's surface roughness model with finite domain distribution functions 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url
Moors, K.; Sorée, B.; Magnus, W. Modeling and tackling resistivity scaling in metal nanowires 2015 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC UA library record; WoS full record url
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic 2014 Applied physics letters 105 10 UA library record; WoS full record; WoS citing articles doi
Toledano-Luque, M.; Matagne, P.; Sibaja-Hernandez, A.; Chiarella, T.; Ragnarsson, L.-A.; Sorée, B.; Cho, M.; Mocuta, A.; Thean, A. Superior reliability of junctionless pFinFETs by reduced oxide electric field 2014 IEEE electron device letters 35 13 UA library record; WoS full record; WoS citing articles doi
Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. Resistivity scaling and electron relaxation times in metallic nanowires 2014 Journal of applied physics 116 17 UA library record; WoS full record; WoS citing articles url doi
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. Can p-channel tunnel field-effect transistors perform as good as n-channel? 2014 Applied physics letters 105 8 UA library record; WoS full record; WoS citing articles url doi
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models 2014 Journal of applied physics 115 34 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors 2014 Journal of applied physics 115 15 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation 2014 Journal of applied physics 115 26 UA library record; WoS full record; WoS citing articles doi
Van de Put, M.; Thewissen, M.; Magnus, W.; Sorée, B.; Sellier, J.M. Spectral force approach to solve the time-dependent Wigner-Liouville equation 2014 2014 International Workshop On Computational Electronics (iwce) UA library record; WoS full record;
Verhulst, A.S.; Verreck, D.; Smets, Q.; Kao, K.-H.; Van de Put, M.; Rooyackers, R.; Sorée, B.; Vandooren, A.; De Meyer, K.; Groeseneken, G.; Heyns, M.M.; Mocuta, A.; Collaert, N.; Thean, A.V.-Y. Perspective of tunnel-FET for future low-power technology nodes 2014 2014 Ieee International Electron Devices Meeting (iedm) UA library record; WoS full record
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. Phonon-assisted Zener tunneling in a cylindrical nanowire transistor 2013 Journal of applied physics 113 4 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. Figure of merit for and identification of sub-60 mV/decade devices 2013 Applied physics letters 102 64 UA library record; WoS full record; WoS citing articles pdf doi
Carrillo-Nunez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. Phonon-assisted Zener tunneling in a p-n diode silicon nanowire 2013 Solid state electronics 79 2 UA library record; WoS full record; WoS citing articles pdf doi
Pathangi, H.; Cherman, V.; Khaled, A.; Sorée, B.; Groeseneken, G.; Witvrouw, A. Towards CMOS-compatible single-walled carbon nanotube resonators 2013 Microelectronic engineering 107 6 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets 2012 IEEE transactions on electron devices 59 72 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors 2012 Applied physics letters 100 25 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Modeling the impact of junction angles in tunnel field-effect transistors 2012 Solid state electronics 69 9 UA library record; WoS full record; WoS citing articles pdf doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Direct and indirect band-to-band tunneling in germanium-based TFETs 2012 IEEE transactions on electron devices 59 212 UA library record; WoS full record; WoS citing articles doi
Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations 2012 Solid state electronics 71 2 UA library record; WoS full record; WoS citing articles pdf doi
Sorée, B.; Magnus, W.; Vandenberghe, W. Low-field mobility in ultrathin silicon nanowire junctionless transistors 2011 Applied physics letters 99 20 UA library record; WoS full record; WoS citing articles url doi
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current 2011 Solid state electronics 65-66 2 UA library record; WoS full record; WoS citing articles pdf doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach 2011 Journal of applied physics 109 41 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. Impact of field-induced quantum confinement in tunneling field-effect devices 2011 Applied physics letters 98 76 UA library record; WoS full record; WoS citing articles doi
Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. Temperature-dependent modeling and characterization of through-silicon via capacitance 2011 IEEE electron device letters 32 27 UA library record; WoS full record; WoS citing articles doi
Sels, D.; Sorée, B.; Groeseneken, G. Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor 2011 Journal of computational electronics 10 12 UA library record; WoS full record; WoS citing articles doi
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