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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links  |
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Vanherck, J.; Bacaksiz, C.; Sorée, B.; Milošević, M.V.; Magnus, W. |
2D ferromagnetism at finite temperatures under quantum scrutiny |
2020 |
Applied Physics Letters |
117 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B. |
Voltage-controlled superconducting magnetic memory |
2019 |
AIP advances
T2 – 64th Annual Conference on Magnetism and Magnetic Materials (MMM), NOV 04-08, 2019, Las Vegas, NV |
9 |
|
UA library record; WoS full record |
|
|
|
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. |
Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions |
2018 |
Journal of applied physics |
124 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. |
Phonon-assisted tunneling in direct-bandgap semiconductors |
2019 |
Journal of applied physics |
125 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Beckers, A.; Thewissen, M.; Sorée, B. |
Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors |
2018 |
Journal of applied physics |
124 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Zografos, O.; Dutta, S.; Manfrini, M.; Vaysset, A.; Sorée, B.; Naeemi, A.; Raghavan, P.; Lauwereins, R.; Radu, I.P. |
Non-volatile spin wave majority gate at the nanoscale |
2017 |
AIP advances
T2 – 61st Annual Conference on Magnetism and Magnetic Materials (MMM), OCT 31-NOV 04, 2016, New Orleans, LA |
7 |
13 |
UA library record; WoS full record; WoS citing articles |
|
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|
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. |
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors |
2016 |
Applied physics letters |
108 |
13 |
UA library record; WoS full record; WoS citing articles |
|
|
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Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. |
Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors |
2015 |
Journal of applied physics |
118 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
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Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. |
Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic |
2014 |
Applied physics letters |
105 |
10 |
UA library record; WoS full record; WoS citing articles |
|
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|
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; |
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models |
2014 |
Journal of applied physics |
115 |
34 |
UA library record; WoS full record; WoS citing articles |
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Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. |
Quantum mechanical solver for confined heterostructure tunnel field-effect transistors |
2014 |
Journal of applied physics |
115 |
15 |
UA library record; WoS full record; WoS citing articles |
|
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Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. |
Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation |
2014 |
Journal of applied physics |
115 |
26 |
UA library record; WoS full record; WoS citing articles |
|
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Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a cylindrical nanowire transistor |
2013 |
Journal of applied physics |
113 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. |
Figure of merit for and identification of sub-60 mV/decade devices |
2013 |
Applied physics letters |
102 |
64 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
2012 |
Applied physics letters |
100 |
25 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach |
2011 |
Journal of applied physics |
109 |
41 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
|
|
|
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. |
Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections |
2010 |
Applied Physics Letters |
96 |
26 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. |
Zener tunneling in semiconductors under nonuniform electric fields |
2010 |
Journal of applied physics |
107 |
22 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. |
Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor |
2010 |
Journal Of Applied Physics |
107 |
150 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
2009 |
Journal of applied physics |
106 |
29 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
2009 |
Journal of applied physics |
106 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. |
A method to calculate tunneling leakage currents in silicon inversion layers |
2006 |
Journal of applied physics |
100 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor |
2004 |
Journal of applied physics |
96 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor |
2003 |
Journal of applied physics |
93 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.; Clemente, F.; Sorée, B.; van der Veen, M.H.; Vosch, T.; Stesmans, A.; Sels, B.; de Gendt, S. |
Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing |
2010 |
Journal Of Physical Chemistry C |
114 |
54 |
UA library record; WoS full record; WoS citing articles |
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|
|
Balaban, S.N.; Pokatilov, E.P.; Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; van Rossum, M.; Sorée, B. |
Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET |
2002 |
Solid-State Electronics |
46 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Deylgat, E.; Chen, E.; Fischetti, M.V.; Sorée, B.; Vandenberghe, W.G. |
Image-force barrier lowering in top- and side-contacted two-dimensional materials |
2022 |
Solid state electronics |
198 |
|
UA library record; WoS full record |
|
|
|
Carrillo-Nunez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a p-n diode silicon nanowire |
2013 |
Solid state electronics |
79 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Modeling the impact of junction angles in tunnel field-effect transistors |
2012 |
Solid state electronics |
69 |
9 |
UA library record; WoS full record; WoS citing articles |
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