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  Author (up) Title Year Publication Volume Times cited Additional Links Links
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Modeling the impact of junction angles in tunnel field-effect transistors 2012 Solid state electronics 69 9 UA library record; WoS full record; WoS citing articles pdf doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets 2012 IEEE transactions on electron devices 59 72 UA library record; WoS full record; WoS citing articles doi
Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. Temperature-dependent modeling and characterization of through-silicon via capacitance 2011 IEEE electron device letters 32 27 UA library record; WoS full record; WoS citing articles doi
Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B. Electronically tunable quantum phase slips in voltage-biased superconducting rings as a base for phase-slip flux qubits 2020 Superconductor Science & Technology 33 4 UA library record; WoS full record; WoS citing articles pdf doi
Kenawy, A.; Magnus, W.; Milošević, M.V.; Sorée, B. Voltage-controlled superconducting magnetic memory 2019 AIP advances T2 – 64th Annual Conference on Magnetism and Magnetic Materials (MMM), NOV 04-08, 2019, Las Vegas, NV 9 UA library record; WoS full record doi
Kenawy, A.; Magnus, W.; Sorée, B. Flux quantization and Aharonov-Bohm effect in superconducting rings 2018 Journal of superconductivity and novel magnetism 31 UA library record; WoS full record doi
Lauwens, J.; Kerkhofs, L.; Sala, A.; Sorée, B. Superconductor-semiconductor hybrid capacitance with a nonlinear charge-voltage profile 2024 Journal of physics: D: applied physics 57 UA library record; WoS full record pdf doi
Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K. Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility 2005 Microelectronic engineering 80 1 UA library record; WoS full record; WoS citing articles pdf doi
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. A method to calculate tunneling leakage currents in silicon inversion layers 2006 Journal of applied physics 100 1 UA library record; WoS full record; WoS citing articles doi
Magnus, W.; Brosens, F.; Sorée, B. Modeling drive currents and leakage currents : a dynamic approach 2009 Journal of computational electronics 8 4 UA library record; WoS full record; WoS citing articles doi
Magnus, W.; Brosens, F.; Sorée, B. Time dependent transport in 1D micro- and nanostructures: solving the Boltzmann and Wigner-Boltzmann equations 2009 Journal of physics : conference series 193 2 UA library record; WoS full record; WoS citing articles url doi
Magnus, W.; Carrillo-Nunez, H.; Sorée, B. Transport in nanostructures 2011 UA library record
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides 2016 Journal of applied physics 120 6 UA library record; WoS full record; WoS citing articles url doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. Phonon-assisted tunneling in direct-bandgap semiconductors 2019 Journal of applied physics 125 2 UA library record; WoS full record; WoS citing articles pdf doi
Moors, K.; Contino, A.; Van de Put, M.L.; Vandenberghe, W.G.; Fischetti, M., V; Magnus, W.; Sorée, B. Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness 2019 Physical review materials 3 4 UA library record; WoS full record; WoS citing articles url doi
Moors, K.; Sorée, B.; Magnus, W. Analytic solution of Ando's surface roughness model with finite domain distribution functions 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url
Moors, K.; Sorée, B.; Magnus, W. Modeling and tackling resistivity scaling in metal nanowires 2015 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC UA library record; WoS full record url
Moors, K.; Sorée, B.; Magnus, W. Modeling surface roughness scattering in metallic nanowires 2015 Journal of applied physics 118 11 UA library record; WoS full record; WoS citing articles url doi
Moors, K.; Sorée, B.; Magnus, W. Validity criteria for Fermi's golden rule scattering rates applied to metallic nanowires 2016 Journal of physics : condensed matter 28 2 UA library record; WoS full record; WoS citing articles pdf doi
Moors, K.; Sorée, B.; Magnus, W. Resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering 2017 Microelectronic engineering 167 6 UA library record; WoS full record; WoS citing articles doi
Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. Resistivity scaling and electron relaxation times in metallic nanowires 2014 Journal of applied physics 116 17 UA library record; WoS full record; WoS citing articles url doi
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.; Clemente, F.; Sorée, B.; van der Veen, M.H.; Vosch, T.; Stesmans, A.; Sels, B.; de Gendt, S. Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing 2010 Journal Of Physical Chemistry C 114 54 UA library record; WoS full record; WoS citing articles doi
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections 2010 Applied Physics Letters 96 26 UA library record; WoS full record; WoS citing articles doi
Osca, J.; Moors, K.; Sorée, B.; Serra, L. Fabry-Perot interferometry with gate-tunable 3D topological insulator nanowires 2021 Nanotechnology 32 UA library record; WoS full record; WoS citing articles pdf doi
Osca, J.; Sorée, B. Skyrmion spin transfer torque due to current confined in a nanowire 2020 Physical Review B 102 UA library record; WoS full record; WoS citing articles doi
Osca, J.; Sorée, B. Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin-orbit interaction 2021 Journal Of Applied Physics 130 UA library record; WoS full record; WoS citing articles doi
Pathangi, H.; Cherman, V.; Khaled, A.; Sorée, B.; Groeseneken, G.; Witvrouw, A. Towards CMOS-compatible single-walled carbon nanotube resonators 2013 Microelectronic engineering 107 6 UA library record; WoS full record; WoS citing articles doi
Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations 2012 Solid state electronics 71 2 UA library record; WoS full record; WoS citing articles pdf doi
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current 2011 Solid state electronics 65-66 2 UA library record; WoS full record; WoS citing articles pdf doi
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; de Meyer, K.; Meuris, M.; Heyns, M. General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors 2008 Journal of computational electronics 7 3 UA library record; WoS full record; WoS citing articles doi
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