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Records |
Links |
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Author |
Zankowski, S.P.; Van Hoecke, L.; Mattelaer, F.; de Raedt, M.; Richard, O.; Detavernier, C.; Vereecken, P.M. |
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| |
Title |
Redox layer deposition of thin films of MnO2 on nanostructured substrates from aqueous solutions |
Type |
A1 Journal article |
| |
Year  |
2019 |
Publication |
Chemistry of materials |
Abbreviated Journal |
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| |
Volume |
31 |
Issue |
13 |
Pages |
4805-4816 |
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| |
Keywords |
A1 Journal article; Sustainable Energy, Air and Water Technology (DuEL) |
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| |
Abstract |
In this work, we report a new method for depositing thin films of MnO2 on planar and complex nanostructured surfaces, with high precision and conformality. The method is based on repeating cycles of adsorption of an unsaturated alcohol on a surface, followed by its oxidation with aqueous KMnO4 and formation of thin, solid MnO2. The amount of manganese oxide formed in each cycle is limited by the quantity of the adsorbed alcohol; thus, the growth exhibits the self-limiting characteristics of atomic layer deposition (ALD). Contrary to the typical ALD, however, the new redox layer deposition is performed in air, at room temperature, using common chemicals and simple laboratory glassware, which greatly reduces its cost and complexity. We also demonstrate application of the method for the fabrication of a nanostructured MnO2/Ni electrode, which was not possible with thermal ALD because of the rapid decomposition of the gaseous precursor on the high surface-area substrate. Thanks to its simplicity, the conformal deposition of MnO2 can be easily upscaled and thus exploited for its numerous (electro)chemical applications. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000475408400021 |
Publication Date |
2019-06-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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| |
ISSN |
0897-4756; 1520-5002 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ admin @ c:irua:161225 |
Serial |
8465 |
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| Permanent link to this record |
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Author |
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
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| |
Title |
Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures |
Type |
A1 Journal article |
| |
Year |
2018 |
Publication |
ECS journal of solid state science and technology |
Abbreviated Journal |
Ecs J Solid State Sc |
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| |
Volume |
7 |
Issue |
2 |
Pages |
P66-P72 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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| |
Abstract |
Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET and Gate All Around devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions. (C) The Author(s) 2018. Published by ECS. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Electrochemical society |
Place of Publication |
Pennington (N.J.) |
Editor |
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Language |
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Wos |
000425215200010 |
Publication Date |
2018-01-21 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
2162-8769; 2162-8777 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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| |
Impact Factor |
1.787 |
Times cited |
5 |
Open Access |
OpenAccess |
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| |
Notes |
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Approved |
Most recent IF: 1.787 |
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| |
Call Number |
UA @ lucian @ c:irua:149326 |
Serial |
4933 |
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| Permanent link to this record |
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Author |
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. |
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Title |
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures |
Type |
P1 Proceeding |
| |
Year |
2017 |
Publication |
Semiconductor Process Integration 10 |
Abbreviated Journal |
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| |
Volume |
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Issue |
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Pages |
241-252 |
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Keywords |
P1 Proceeding; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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| |
Abstract |
Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees C. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during the Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Electrochemical soc inc |
Place of Publication |
Pennington |
Editor |
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Language |
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Wos |
000426269800024 |
Publication Date |
2017-10-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
80 |
Series Issue |
4 |
Edition |
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| |
ISSN |
978-1-60768-821-1; 978-1-62332-473-5 |
ISBN |
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Additional Links |
UA library record; WoS full record |
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Impact Factor |
|
Times cited |
|
Open Access |
Not_Open_Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:149965 |
Serial |
4966 |
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| Permanent link to this record |
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Author |
Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. |
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Title |
Structural characterization of SnS crystals formed by chemical vapour deposition |
Type |
A1 Journal article |
| |
Year |
2017 |
Publication |
Journal of microscopy
T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND |
Abbreviated Journal |
J Microsc-Oxford |
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| |
Volume |
268 |
Issue |
3 |
Pages |
276-287 |
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Keywords |
A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT) |
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Abstract |
<script type='text/javascript'>document.write(unpmarked('The crystal and defect structure of SnS crystals grown using chemical vapour deposition for application in electronic devices are investigated. The structural analysis shows the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nanometer scale thickness, and much thicker but smaller crystallites. Both show similar Raman response associated with SnS. The structural analysis with transmission electron microscopy shows that the flakes are single crystals of -SnS with [010] normal to the substrate. Parallel with the surface of the flakes, lamellae with varying thickness of a new SnS phase are observed. High-resolution transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), first-principles simulations (DFT) and nanobeam diffraction (NBD) techniques are employed to characterise this phase in detail. DFT results suggest that the phase is a strain stabilised \u0027 one grown epitaxially on the -SnS crystals. TEM analysis shows that the crystallites are also -SnS with generally the [010] direction orthogonal to the substrate. Contrary to the flakes the crystallites consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. Under high-dose electron irradiation, the SnS structure is reduced and -Sn formed. It is shown that this damage only occurs for SnS in direct contact with SiO2. Lay description SnS is a p-type semiconductor, which has attracted significant interest for electronic devices due to its unique properties, low-toxicity and abundance of Sn in nature. Although in the past it has been most extensively studied as the absorber material in solar cells, it has recently garnered interest for application as a p-type two-dimensional semiconductor in nanoelectronic devices due to its anisotropic layered structure similar to the better known phosphorene. Tin sulphide can take the form of several phases and the electronic properties of the material depend strongly on its crystal structure. It is therefore crucial to study the crystal structure of the material in order to predict the electronic properties and gain insight into the growth mechanism. In this work, SnS crystals deposited using a chemical vapour deposition technique are investigated extensively for their crystal and defect structure using transmission electron microscopy (TEM) and related techniques. We find the presence of two distinct crystal morphologies, that is thin flakes with lateral sizes up to 50 m and nm scale thickness, and much thicker but smaller crystallites. The flakes are single crystals of -SnS and contain lamellae with varying thickness of a different phase which appear to be -SnS at first glance. High-resolution scanning transmission electron microscopy is used to characterise these lamellae where the annular bright field (ABF) mode better reveals the position of the sulphur columns. The sulphur columns in the lamellae are found to be shifted relative to the -SnS structure which indicates the formation of a new phase which is a distorted version of the phase which we tentatively refer to as \u0027-SnS. Simulations based on density functional theory (DFT) are used to model the interface and a similar shift of sulphur columns in the -SnS layer is observed which takes place as a result of strong interaction at the interface between the two phases resulting in strain transfer. Nanobeam electron diffraction (NBD) is used to map the lattice mismatch in the thickness of the flakes which reveals good in-plane matching and some expansion out-of-plane in the lamellae. Contrary to the flakes the crystallites are made solely of -SnS and consist of two to four grains which are tilted up to 15 degrees relative to the substrate. The various grain boundary structures and twin relations are discussed. At high electron doses, SnS is reduced to -Sn, however the damage occurs only for SnS in direct contact with SiO2.')); |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Wiley |
Place of Publication |
Hoboken |
Editor |
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Language |
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Wos |
000415900300009 |
Publication Date |
2017-09-28 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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| |
ISSN |
0022-2720 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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| |
Impact Factor |
1.692 |
Times cited |
2 |
Open Access |
Not_Open_Access |
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Notes |
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Approved |
Most recent IF: 1.692 |
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| |
Call Number |
UA @ lucian @ c:irua:147692 |
Serial |
4898 |
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| Permanent link to this record |
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Author |
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. |
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| |
Title |
Compositional characterization of nickel silicides by HAADF-STEM imaging |
Type |
A1 Journal article |
| |
Year |
2011 |
Publication |
Journal of materials science |
Abbreviated Journal |
J Mater Sci |
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| |
Volume |
46 |
Issue |
7 |
Pages |
2001-2008 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
A methodology for the quantitative compositional characterization of nickel silicides by high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging is presented. HAADF-STEM images of a set of nickel silicide reference samples Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2 are taken at identical experimental conditions. The correlation between sample thickness and HAADF-STEM intensity is discussed. In order to quantify the relationship between the experimental Z-contrast intensities and the composition of the analysed layers, the ratio of the HAADF-STEM intensity to the sample thickness or to the intensity of the silicon substrate is determined for each nickel silicide reference sample. Diffraction contrast is still detected on the HAADF-STEM images, even though the detector is set at the largest possible detection angle. The influence on the quantification results of intensity fluctuations caused by diffraction contrast and channelling is examined. The methodology is applied to FUSI gate devices and to horizontal TFET devices with different nickel silicides formed on source, gate and drain. It is shown that, if the elements which are present are known, this methodology allows a fast quantitative 2-dimensional compositional analysis. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000286633000002 |
Publication Date |
2011-01-06 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
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| |
ISSN |
0022-2461;1573-4803; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.599 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
Most recent IF: 2.599; 2011 IF: 2.015 |
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Call Number |
UA @ lucian @ c:irua:88950 |
Serial |
446 |
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| Permanent link to this record |
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Author |
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. |
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Title |
Characterization of nickel silicides using EELS-based methods |
Type |
A1 Journal article |
| |
Year |
2010 |
Publication |
Journal of microscopy |
Abbreviated Journal |
J Microsc-Oxford |
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| |
Volume |
240 |
Issue |
1 |
Pages |
75-82 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
The characterization of Ni-silicides using electron energy loss spectroscopy (EELS) based methods is discussed. A series of Ni-silicide phases is examined: Ni3Si, Ni31Si12, Ni2Si, NiSi and NiSi2. The composition of these phases is determined by quantitative core-loss EELS. A study of the low loss part of the EELS spectrum shows that both the energy and the shape of the plasmon peak are characteristic for each phase. Examination of the Ni-L edge energy loss near edge structure (ELNES) shows that the ratio and the sum of the L2 and L3 white line intensities are also characteristic for each phase. The sum of the white line intensities is used to determine the trend in electron occupation of the 3d states of the phases. The dependence of the plasmon energy on the electron occupation of the 3d states is demonstrated. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Oxford |
Editor |
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Language |
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Wos |
000281715400009 |
Publication Date |
2010-05-20 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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| |
ISSN |
0022-2720; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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| |
Impact Factor |
1.692 |
Times cited |
11 |
Open Access |
|
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| |
Notes |
|
Approved |
Most recent IF: 1.692; 2010 IF: 1.872 |
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| |
Call Number |
UA @ lucian @ c:irua:84879 |
Serial |
329 |
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| Permanent link to this record |
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Author |
Ghica, C.; Nistor, L.C.; Bender, H.; Richard, O.; Van Tendeloo, G.; Ulyashin, A. |
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Title |
TEM characterization of extended defects induced in Si wafers by H-plasma treatment |
Type |
A1 Journal article |
| |
Year |
2007 |
Publication |
Journal of physics: D: applied physics |
Abbreviated Journal |
J Phys D Appl Phys |
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| |
Volume |
40 |
Issue |
2 |
Pages |
395-400 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000243725800017 |
Publication Date |
2007-01-06 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-3727;1361-6463; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
2.588 |
Times cited |
10 |
Open Access |
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| |
Notes |
Bil 01/73 |
Approved |
Most recent IF: 2.588; 2007 IF: 2.200 |
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Call Number |
UA @ lucian @ c:irua:62601 |
Serial |
3476 |
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| Permanent link to this record |
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Author |
Ghica, C.; Nistor, L.C.; Bender, H.; Richard, O.; Van Tendeloo, G.; Ulyashin, A.; |
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Title |
Characterization of {111} planar defects induced in silicon by hydrogen plasma treatments |
Type |
A1 Journal article |
| |
Year |
2006 |
Publication |
Philosophical magazine |
Abbreviated Journal |
Philos Mag |
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| |
Volume |
86 |
Issue |
32 |
Pages |
5137-5151 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
000239756300010 |
Publication Date |
2006-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
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ISSN |
1478-6435;1478-6443; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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| |
Impact Factor |
1.505 |
Times cited |
12 |
Open Access |
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Notes |
Bil 01/73 |
Approved |
Most recent IF: 1.505; 2006 IF: 1.354 |
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Call Number |
UA @ lucian @ c:irua:60895 |
Serial |
315 |
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| Permanent link to this record |
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Author |
Nistor, L.C.; Richard, O.; Zhao, C.; Bender, H.; Van Tendeloo, G. |
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Title |
Thermal stability of atomic layer deposited Zr:Al mixed oxide thin films: an in situ transmission electron microscopy study |
Type |
A1 Journal article |
| |
Year |
2005 |
Publication |
Journal of materials research |
Abbreviated Journal |
J Mater Res |
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| |
Volume |
20 |
Issue |
7 |
Pages |
1741-1750 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000230296100012 |
Publication Date |
2005-07-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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| |
Series Volume |
|
Series Issue |
|
Edition |
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| |
ISSN |
0884-2914;2044-5326; |
ISBN |
|
Additional Links |
UA library record; WoS full record |
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| |
Impact Factor |
1.673 |
Times cited |
|
Open Access |
|
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| |
Notes |
Bil 01/73; IAP V-1 |
Approved |
Most recent IF: 1.673; 2005 IF: 2.104 |
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| |
Call Number |
UA @ lucian @ c:irua:54884 |
Serial |
3631 |
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| Permanent link to this record |
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Author |
Nistor, L.C.; Richard, O.; Zhao, O.; Bender, H.; Stesmans, A.; Van Tendeloo, G. |
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Title |
A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films |
Type |
A1 Journal article |
| |
Year |
2003 |
Publication |
Institute of physics conference series
T2 – Microscopy of semiconducting materials |
Abbreviated Journal |
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| |
Volume |
|
Issue |
|
Pages |
397-400 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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| |
Abstract |
The thermal stability of amorphous Al2O3 films (similar to8 and 80 nut thick) deposited by atomic layer deposition on HF-last and thin SiO2 covered (001) Si substrates is studied by transmission electron microscopy. The layers are in- and ex-situ annealed in the same temperature range. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
Iop |
Place of Publication |
Cambridge |
Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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| |
ISSN |
0-7503-0979-2 |
ISBN |
|
Additional Links |
UA library record; WoS full record; |
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| |
Impact Factor |
|
Times cited |
|
Open Access |
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| |
Notes |
|
Approved |
Most recent IF: NA |
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| |
Call Number |
UA @ lucian @ c:irua:54860 |
Serial |
2048 |
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| Permanent link to this record |
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| |
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Author |
Ranjan, R.; Pandey, D.; Schuddinck, W.; Richard, O.; De Meulenaere, P.; van Landuyt, J.; Van Tendeloo, G. |
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| |
Title |
Evolution of crystallographic phases in (Sr1-xCax)TiO3 with composition (x) |
Type |
A1 Journal article |
| |
Year |
2001 |
Publication |
Journal of solid state chemistry |
Abbreviated Journal |
J Solid State Chem |
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| |
Volume |
162 |
Issue |
1 |
Pages |
20-28 |
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Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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| |
Language |
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Wos |
000172586400003 |
Publication Date |
2002-09-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0022-4596; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
2.299 |
Times cited |
45 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 2.299; 2001 IF: 1.614 |
|
| |
Call Number |
UA @ lucian @ c:irua:54711 |
Serial |
1098 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Richard, O.; Van Tendeloo, G.; Lemée, N.; le Lannic, J.; Guilloux-Viry, M.; Perrin, A. |
|
| |
Title |
Microstructure of CuXMo6S8 Chevrel phase thin films on R-plane sapphire |
Type |
A1 Journal article |
| |
Year |
2000 |
Publication |
Journal of electron microscopy |
Abbreviated Journal |
Microscopy-Jpn |
|
| |
Volume |
49 |
Issue |
3 |
Pages |
493-501 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Tokyo |
Editor |
|
|
| |
Language |
|
Wos |
000088308100015 |
Publication Date |
2012-04-19 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0022-0744;1477-9986; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
0.9 |
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:54722 |
Serial |
2069 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Ferroni, M.; Carotta, M.C.; Guidi, V.; Martinelli, G.; Ronconi, F.; Richard, O.; van Dyck, D.; van Landuyt, J. |
|
| |
Title |
Structural characterization of Nb-TiO2 nanosized thick-films for gas sensing application |
Type |
P1 Proceeding |
| |
Year |
2000 |
Publication |
Sensors and actuators : B : chemical |
Abbreviated Journal |
Sensor Actuat B-Chem |
|
| |
Volume |
68 |
Issue |
1-3 |
Pages |
140-145 |
|
| |
Keywords |
P1 Proceeding; Electron microscopy for materials research (EMAT); Vision lab |
|
| |
Abstract |
Pure and Nb-doped TiO2 thick-films were prepared by screen-printing, starting from nanosized powders. Grain growth and crystalline phase modification occurred as consequence of firing at high temperature. It has been shown that niobium addition inhibits grain coarsening and hinders anatase-to-rutile phase transition. These semiconducting films exhibited n-type behavior, while Nb acted as donor-dopant. Gas measurements demonstrated that the films are suitable for CO or NO2 sensing. Microstructural characterization by electron microscopy and differential thermal analysis (DTA) highlights the dependence of gas-sensing behavior on film's properties. (C) 2000 Elsevier Science S.A. All rights reserved. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Lausanne |
Editor |
|
|
| |
Language |
|
Wos |
000089218000022 |
Publication Date |
2002-07-25 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0925-4005; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
5.401 |
Times cited |
51 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 5.401; 2000 IF: 1.470 |
|
| |
Call Number |
UA @ lucian @ c:irua:95167 |
Serial |
3223 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Lemmens, H.; Richard, O.; Van Tendeloo, G.; Bismayer, U. |
|
| |
Title |
Microstructure and phase transitions in Pb(Sc0.5Ta0.5)O3 |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Journal of electron microscopy |
Abbreviated Journal |
Microscopy-Jpn |
|
| |
Volume |
48 |
Issue |
6 |
Pages |
843-847 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
The microstructure and phase transitions in the perovskite-based ferroelectric lead scandium tantalate, Pb(Sc0.5Ta0.5)O-3 have been investigated by transmission electron microscopy. The effects of ordering of Sc and Ta cations are apparent in reciprocal space as well as in direct space images. High-resolution observations allow direct structure imaging of the domain structure. The structure of the low temperature ferroelectric phase is studied by selected area electron diffraction (SAED) and electron microdiffraction. The relaxer behaviour of this paraelectric-ferroelectric transition is displayed by diffuse intensities in the SAED patterns at temperatures around the Curie point. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Tokyo |
Editor |
|
|
| |
Language |
|
Wos |
000085129600023 |
Publication Date |
2012-04-19 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0022-0744;1477-9986; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
0.9 |
Times cited |
7 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:95195 |
Serial |
2057 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Seo, J.W.; Schryvers, D.; Vermeulen, W.; Richard, O.; Potapov, P. |
|
| |
Title |
Electron microscopy investigation of ternary \gamma-brass-type precipitation in a Ni39.6Mn47.5Ti12.9 alloy |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
Philos Mag A |
|
| |
Volume |
79 |
Issue |
6 |
Pages |
1279-1294 |
|
| |
Keywords |
A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT); Laboratory Experimental Medicine and Pediatrics (LEMP) |
|
| |
Abstract |
Homogenized Ni39.6Mn47.5T12.9 material was investigated by different electron microscopy techniques. Apart from the martensite precursor distortions typical for B2 phase alloys undergoing a thermoelastic martensitic transformation upon cooling, coherent dodecahedron-shaped precipitates with sizes between 20 and 100 nm and faceted by lozenge shapes of {110}-type planes are observed. Selected-area and microdiffraction patterns reveal an overall unit cell with a size of 3 x 3 x 3 units of the bcc lattice of the matrix and a body-centred symmetry without screw axes. Finally a ternary gamma-brass-type atomic structure of space group 14(3) over bar m is suggested for these precipitates in accordance with the obtained symmetry constraints, the energy-dispersive X-ray measurements and high-resolution transmission electron microscopy images. This is the first time this type of structure is found in an alloy completely consisting of transition-metal elements. |
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| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
London |
Editor |
|
|
| |
Language |
|
Wos |
000080687900002 |
Publication Date |
2007-07-08 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0141-8610;1460-6992; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
|
Times cited |
3 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:104297 |
Serial |
956 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Leroux, C.; Badeche, T.; Nihoul, G.; Richard, O.; Van Tendeloo, G. |
|
| |
Title |
A homologous series Pb2n+1Nb2n-1O7n-1 studied by electron microscopy |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
European physical journal: applied physics |
Abbreviated Journal |
Eur Phys J-Appl Phys |
|
| |
Volume |
7 |
Issue |
|
Pages |
33-40 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Paris |
Editor |
|
|
| |
Language |
|
Wos |
000082211000005 |
Publication Date |
2003-06-20 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1286-0042;1286-0050; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
0.684 |
Times cited |
4 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 0.684; 1999 IF: 0.208 |
|
| |
Call Number |
UA @ lucian @ c:irua:29717 |
Serial |
1488 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Richard, O.; Schuddinck, W.; Van Tendeloo, G.; Millange, F.; Hervieu, M.; Caignaert, C.; Raveau, B. |
|
| |
Title |
Room temperature and low-temperature structure of Nd1-xCaxMnO3 (0.3*x*0.5) |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Acta crystallographica: section A: foundations of crystallography |
Abbreviated Journal |
Acta Crystallogr A |
|
| |
Volume |
55 |
Issue |
|
Pages |
704-718 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Copenhagen |
Editor |
|
|
| |
Language |
|
Wos |
000081697500013 |
Publication Date |
2002-07-27 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0108-7673; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
5.725 |
Times cited |
24 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 5.725; 1999 IF: 1.601 |
|
| |
Call Number |
UA @ lucian @ c:irua:29715 |
Serial |
2929 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Fröba, M.; Köhn, R.; Bouffaud, G.; Richard, O.; Van Tendeloo, G. |
|
| |
Title |
_Fe2O3 nanoparticles with mesoporous MCM-48 silica: in situ formation and characterisation |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Chemistry of materials |
Abbreviated Journal |
Chem Mater |
|
| |
Volume |
11 |
Issue |
|
Pages |
2858-2865 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Washington, D.C. |
Editor |
|
|
| |
Language |
|
Wos |
000083261100032 |
Publication Date |
2002-07-26 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0897-4756;1520-5002; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
9.466 |
Times cited |
202 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 9.466; 1999 IF: 3.273 |
|
| |
Call Number |
UA @ lucian @ c:irua:29721 |
Serial |
3530 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Rembeza, E.S.; Richard, O.; van Landuyt, J. |
|
| |
Title |
Influence of laser and isothermal treatments on microstructural properties of SnO2 films |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Materials research bulletin |
Abbreviated Journal |
Mater Res Bull |
|
| |
Volume |
34 |
Issue |
10/11 |
Pages |
1527-1533 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
New York, N.Y. |
Editor |
|
|
| |
Language |
|
Wos |
000084625300006 |
Publication Date |
2002-07-25 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0025-5408; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
2.446 |
Times cited |
17 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 2.446; 1999 IF: 0.840 |
|
| |
Call Number |
UA @ lucian @ c:irua:29691 |
Serial |
1626 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Seo, J.W.; Schryvers, D.; Vermeulen, W.; Richard, O.; Potapov, P. |
|
| |
Title |
EM investigation of precursors and precipitation in a Ni39.6Mn47.5Ti12.9 alloy |
Type |
A1 Journal article |
| |
Year |
1999 |
Publication |
Philosophical magazine: A: physics of condensed matter: defects and mechanical properties |
Abbreviated Journal |
Philos Mag A |
|
| |
Volume |
79 |
Issue |
|
Pages |
1279-1294 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
London |
Editor |
|
|
| |
Language |
|
Wos |
000080687900002 |
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0141-8610; 1364-2804 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
|
Times cited |
3 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:29378 |
Serial |
1029 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Schryvers, D.; Seo, J.W.; Richard, O.; Vermeulen, W.; Potapov, P. |
|
| |
Title |
Decomposition phenomena in Ni-Mn-Ti austenite |
Type |
H1 Book chapter |
| |
Year |
1999 |
Publication |
|
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
887-892 |
|
| |
Keywords |
H1 Book chapter; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
s.l. |
Editor |
|
|
| |
Language |
|
Wos |
000086479100194 |
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:48372 |
Serial |
609 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Francesconi, M.G.; Kirbyshire, A.L.; Greaves, C.; Richard, O.; Van Tendeloo, G. |
|
| |
Title |
Synthesis and structure of Bi14O20(SO4), a new bismuth oxide sulfate |
Type |
A1 Journal article |
| |
Year |
1998 |
Publication |
Chem. mater. |
Abbreviated Journal |
Chem Mater |
|
| |
Volume |
10 |
Issue |
|
Pages |
626-632 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Wos |
000072146800027 |
Publication Date |
2002-07-26 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0897-4756;1520-5002; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
9.466 |
Times cited |
30 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: 9.466; 1998 IF: 3.359 |
|
| |
Call Number |
UA @ lucian @ c:irua:25660 |
Serial |
3442 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Van Tendeloo, G.; Richard, O.; Schuddinck, W.; Hervieu, M. |
|
| |
Title |
Fine structure of CMR perovskites by HREM and CBEM |
Type |
A1 Journal article |
| |
Year |
1998 |
Publication |
Electron microscopy: vol. 1 |
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
383-384 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Wos |
000077017600178 |
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; |
|
| |
Impact Factor |
|
Times cited |
|
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:25674 |
Serial |
1194 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Hervieu, M.; Van Tendeloo, G.; Schuddinck, W.; Richard, O.; Caignaert, V.; Millange, F.; Raveau, B. |
|
| |
Title |
Structural phase transition in the manganite Nd0.5Ca0.2Sr0.3MnO3-\delta |
Type |
A1 Journal article |
| |
Year |
1997 |
Publication |
Journal of electron microscopy |
Abbreviated Journal |
Microscopy-Jpn |
|
| |
Volume |
46 |
Issue |
4 |
Pages |
263-269 |
|
| |
Keywords |
A1 Journal article; Electron microscopy for materials research (EMAT) |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
Tokyo |
Editor |
|
|
| |
Language |
|
Wos |
A1997XY94900001 |
Publication Date |
0000-00-00 |
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0022-0744; 1477-9986 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
| |
Impact Factor |
0.9 |
Times cited |
2 |
Open Access |
|
|
| |
Notes |
|
Approved |
Most recent IF: NA |
|
| |
Call Number |
UA @ lucian @ c:irua:21446 |
Serial |
3249 |
|
| Permanent link to this record |
