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	Author	Vansweevelt, R.; Mortet, V.; D' Haen, J.; Ruttens, bart; van Haesendonck, C.; Partoens, B.; Peeters, F.M.; Wagner, P.
	Title	Study on the giant positive magnetoresistance and Hall effect in ultrathin graphite flakes			Type	A1 Journal article
	Year	2011	Publication	Physica status solidi : A : applications and materials science	Abbreviated Journal	Phys Status Solidi A
	Volume	208	Issue	6	Pages	1252-1258
	Keywords	A1 Journal article; Condensed Matter Theory (CMT)
	Abstract	In this paper, we report on the electronic transport properties of mesoscopic, ultrathin graphite flakes with a thickness corresponding to a stack of 150 graphene layers. The graphite flakes show an unexpectedly strong positive magnetoresistance (PMR) already at room temperature, which scales in good approximation with the square of the magnetic field. Furthermore, we show that the resistivity is unaffected by magnetic fields oriented in plane with the graphene layers. Hall effect measurements indicate that the charge carriers are p-type and their concentration increases with increasing temperature while the mobility is decreasing. The Hall voltage is non-linear in higher magnetic fields. Possible origins of the observed effects are discussed. Ball and stick model of the two topmost carbon layers of the hexagonal graphite structure.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000292945800008	Publication Date	2011-02-24
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6300;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.775	Times cited	8	Open Access
	Notes	; The authors gratefully acknowledge the support by FWO – Research Foundation Flanders (project G.0159.07 “Structural and electronic properties of biologically modified, graphene-based layers”), by the Federal Belgian Interuniversity Attraction Poles Programme BELSPO (project TAP VI P6/42 “Quantum effects in clusters and nanowires”) and by the Methusalem network “NANO – Antwerp-Hasselt,” funded by the Flemish Community. Technical assistance by Stoffel D. Janssens (magnet calibration and software development), Dr. Hong Yin (AFM-based thickness studies), Dr. Ronald Thoelen (data analysis), and Prof. Hans-Gerd Boyen (XPS spectroscopy) is greatly appreciated. ;			Approved	Most recent IF: 1.775; 2011 IF: 1.463
	Call Number	UA @ lucian @ c:irua:91941			Serial	3343
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	Author	Mortet, V.; Zhang, L.; Eckert, M.; D'Haen, J.; Soltani, A.; Moreau, M.; Troadec, D.; Neyts, E.; De Jaeger, J.C.; Verbeeck, J.; Bogaerts, A.; Van Tendeloo, G.; Haenen, K.; Wagner, P.
	Title	Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study			Type	A1 Journal article
	Year	2012	Publication	Physica status solidi : A : applications and materials science	Abbreviated Journal	Phys Status Solidi A
	Volume	209	Issue	9	Pages	1675-1682
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	In this work, a detailed structural and spectroscopic study of nanocrystalline diamond (NCD) thin films grown by a continuous bias assisted CVD growth technique is reported. This technique allows the tuning of grain size and phase purity in the deposited material. The crystalline properties of the films are characterized by SEM, TEM, EELS, and Raman spectroscopy. A clear improvement of the crystalline structure of the nanograined diamond film is observed for low negative bias voltages, while high bias voltages lead to thin films consisting of diamond grains of only ∼10 nm nanometer in size, showing remarkable similarities with so-called ultrananocrystalline diamond. These layers arecharacterized by an increasing amount of sp2-bonded carbon content of the matrix in which the diamond grains are embedded. Classical molecular dynamics simulations support the observed experimental data, giving insight in the underlying mechanism for the observed increase in deposition rate with bias voltage. Furthermore, a high atomic concentration of hydrogen has been determined in these films. Finally, Raman scattering analyses confirm that the Raman line observed at ∼1150 cm−1 cannot be attributed to trans-poly-acetylene, which continues to be reported in literature, reassigning it to a deformation mode of CHx bonds in NCD.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000308942100009	Publication Date	2012-09-04
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6300;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.775	Times cited	31	Open Access
	Notes	M.E. and E.N. acknowledge financial support from, respectively, the Institute for Promotion of Innovation through Science and Technology in Flanders (IWT), and the Research Foundation-Flanders (FWO). J.V. gratefully acknowledges financial support from the GOA project “XANES meets ELNES” of the research fund of the University of Antwerp. Calculation support was provided by the University of Antwerp through the core facility CALCUA. G.V.T. acknowledges the ERC grant COUNTATOMS. The work was also financially supported by the joint UAUHasseltMethusalem “NANO” network, the Research Programs G.0068.07 and G.0555.10N of the Research Foundation-Flanders (FWO), the IAP-P6/42 project “Quantum Effects in Clusters and Nanowires”, and by the EU FP7 through the Integrated Infrastructure Initiative “ESMI” (No. 262348), the Marie Curie ITN “MATCON” (PITN-GA-2009-238201), and the Collaborative Project “DINAMO” (No. 245122).			Approved	Most recent IF: 1.775; 2012 IF: 1.469
	Call Number	UA @ lucian @ c:irua:101516UA @ admin @ c:irua:101516			Serial	1364
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	Author	Jalabert, D.; Pelloux-Gervais, D.; Béché, A.; Hartmann, J.M.; Gergaud, P.; Rouvière, J.L.; Canut, B.
	Title	Depth strain profile with sub-nm resolution in a thin silicon film using medium energy ion scattering			Type	A1 Journal article
	Year	2012	Publication	Physica Status Solidi A-Applications And Materials Science	Abbreviated Journal	Phys Status Solidi A
	Volume	209	Issue	2	Pages	265-267
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub-nanometer resolution and high strain sensitivity that the thin Si cap presents residual compressive strain caused by Ge diffusion coming from the fully strained SiGe layer underneath. The strain state of the SiGe buffer have been checked by X-ray diffraction (XRD) and nano-beam electron diffraction (NBED) measurements.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000303382700005	Publication Date	2011-11-11
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6300;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.775	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 1.775; 2012 IF: 1.469
	Call Number	UA @ lucian @ c:irua:136430			Serial	4497
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	Author	Turner, S.; Shenderova, O.; da Pieve, F.; Lu, Y.-G.; Yücelen, E.; Verbeeck, J.; Lamoen, D.; Van Tendeloo, G.
	Title	Aberration-corrected microscopy and spectroscopy analysis of pristine, nitrogen containing detonation nanodiamond			Type	A1 Journal article
	Year	2013	Publication	Physica status solidi : A : applications and materials science	Abbreviated Journal	Phys Status Solidi A
	Volume	210	Issue	10	Pages	1976-1984
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	Aberration-corrected transmission electron microscopy, electron energy-loss spectroscopy, and density functional theory (DFT) calculations are used to solve several key questions about the surface structure, the particle morphology, and the distribution and nature of nitrogen impurities in detonation nanodiamond (DND) cleaned by a recently developed ozone treatment. All microscopy and spectroscopy measurements are performed at a lowered acceleration voltage (80/120kV), allowing prolonged and detailed experiments to be carried out while minimizing the risk of knock-on damage or surface graphitization of the nanodiamond. High-resolution TEM (HRTEM) demonstrates the stability of even the smallest nanodiamonds under electron illumination at low voltage and is used to image the surface structure of pristine DND. High resolution electron energy-loss spectroscopy (EELS) measurements on the fine structure of the carbon K-edge of nanodiamond demonstrate that the typical * pre-peak in fact consists of three sub-peaks that arise from the presence of, amongst others, minimal fullerene-like reconstructions at the nanoparticle surfaces and deviations from perfect sp(3) coordination at defects in the nanodiamonds. Spatially resolved EELS experiments evidence the presence of nitrogen within the core of DND particles. The nitrogen is present throughout the whole diamond core, and can be enriched at defect regions. By comparing the fine structure of the experimental nitrogen K-edge with calculated energy-loss near-edge structure (ELNES) spectra from DFT, the embedded nitrogen is most likely related to small amounts of single substitutional and/or A-center nitrogen, combined with larger nitrogen clusters.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000329299700025	Publication Date	2013-10-18
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6300;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.775	Times cited	37	Open Access
	Notes	262348 ESMI; 246791 COUNTATOMS; FWO; Hercules; GOA XANES meets ELNES			Approved	Most recent IF: 1.775; 2013 IF: 1.525
	Call Number	UA @ lucian @ c:irua:110821UA @ admin @ c:irua:110821			Serial	41
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	Author	Van Gompel, M.; Atalay, A.Y.; Gaulke, A.; Van Bael, M.K.; D'Haen, J.; Turner, S.; Van Tendeloo, G.; Vanacken, J.; Moshchalkov, V.V.; Wagner, P.
	Title	Morphological TEM studies and magnetoresistance analysis of sputtered Al-substituted ZnO films : the role of oxygen			Type	A1 Journal article
	Year	2015	Publication	Physica status solidi : A : applications and materials science	Abbreviated Journal	Phys Status Solidi A
	Volume	212	Issue	212	Pages	1191-1201
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	In this article, we report on the synthesis of thin, epitaxial films of the transparent conductive oxide Al:ZnO on (0001)-oriented synthetic sapphire substrates by DC sputtering from targets with a nominal 1 at.% Al substitution. The deposition was carried out at an unusually low substrate temperature of only 250 °C in argonoxygen mixtures as well as in pure argon. The impact of the processgas composition on the morphology was analysed by transmission electron microscopy, revealing epitaxial growth in all the cases with a minor impact of the process parameters on the resulting grain sizes. The transport properties resistivity, Hall effect and magnetoresistance were studied in the range from 10 to 300 K in DC and pulsed magnetic fields up to 45 T. While the carrier density and mobility are widely temperature independent, we identified a low fieldlow temperature regime in which the magnetoresistance shows an anomalous, negative behaviour. At higher fields and temperatures, the magnetoresistance exhibits a more conventional, positive curvature with increasing field strength. As a possible explanation, we propose carrier scattering at localised magnetic trace impurities and magnetic correlations.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000356706500003	Publication Date	2015-04-21
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1862-6300;	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	1.775	Times cited		Open Access
	Notes	Methusalem project NANO; FWO; 246791 COUNTATOMS			Approved	Most recent IF: 1.775; 2015 IF: 1.616
	Call Number	c:irua:126732			Serial	2204
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	Author	Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N.
	Title	Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures			Type	A1 Journal article
	Year	2018	Publication	ECS journal of solid state science and technology	Abbreviated Journal	Ecs J Solid State Sc
	Volume	7	Issue	2	Pages	P66-P72
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	Epitaxially grown ultra-thin Si layers are often used to passivate Ge surfaces in the high-k gate module of (strained) Ge FinFET and Gate All Around devices. We use Si4H10 as Si precursor as it enables epitaxial Si growth at temperatures down to 330 degrees. C-V characteristics of blanket capacitors made on Ge virtual substrates point to the presence of an optimal Si thickness. In case of compressively strained Ge fin structures, the Si growth results in non-uniform and high strain levels in the strained Ge fin. These strain levels have been calculated for different shapes of the Ge fin and in function of the grown Si thickness. The high strain is the driving force for potential (unwanted) Ge surface reflow during Si deposition. The Ge surface reflow is strongly affected by the strength of the H-passivation during Si-capping and can be avoided by carefully selected process conditions. (C) The Author(s) 2018. Published by ECS.
	Address
	Corporate Author				Thesis
	Publisher	Electrochemical society	Place of Publication	Pennington (N.J.)	Editor
	Language		Wos	000425215200010	Publication Date	2018-01-21
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-8769; 2162-8777	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.787	Times cited	5	Open Access	OpenAccess
	Notes				Approved	Most recent IF: 1.787
	Call Number	UA @ lucian @ c:irua:149326			Serial	4933
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	Author	Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M.
	Title	Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations			Type	A1 Journal article
	Year	2018	Publication	ECS journal of solid state science and technology	Abbreviated Journal	Ecs J Solid State Sc
	Volume	7	Issue	6	Pages	N73-N80
	Keywords	A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	In this contribution, we report a fundamental study of the factors that set the contact resistivity between metals and highly doped n-type 2D and 3D semiconductors. We investigate the case of n-type doped Si contacted with amorphous TiSi combining first principles calculations with Non-Equilibrium Green functions transport simulations. The evolution of the intrinsic contact resistivity with the doping concentration is found to saturate at similar to 2 x 10(-10) Omega.cm(2) for the case of TiSi and imposes an intrinsic limit to the ultimate contact resistance achievable for n-doped Silamorphous-TiSi (aTiSi). The limit arises from the intrinsic properties of the semiconductors and of the metals such as their electron effective masses and Fermi energies. We illustrate that, in this regime, contacting heavy electron effective mass metals with semiconductor helps reducing the interface intrinsic contact resistivity. This observation seems to hold true regardless of the 3D character of the semiconductor, as illustrated for the case of three 2D semiconducting materials, namely MoS2, ZrS2 and HfS2. (C) The Author(s) 2018. Published by ECS.
	Address
	Corporate Author				Thesis
	Publisher	Electrochemical society	Place of Publication	Pennington (N.J.)	Editor
	Language		Wos	000440836000004	Publication Date	2018-05-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-8769; 2162-8777	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.787	Times cited	2	Open Access	Not_Open_Access
	Notes	; The authors thank the imec core CMOS program members, the European Commission, its TAKEMI5 ECSEL research project and the local authorities for their support. ;			Approved	Most recent IF: 1.787
	Call Number	UA @ lucian @ c:irua:153205UA @ admin @ c:irua:153205			Serial	5130
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	Author	Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W.
	Title	On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications			Type	A1 Journal article
	Year	2018	Publication	ECS journal of solid state science and technology	Abbreviated Journal	Ecs J Solid State Sc
	Volume	7	Issue	5	Pages	P228-P237
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (<1%). Literature proposes the formation of local semiconducting Si3P4 complexes to explain the observed behaviors in Si:P [Z. Ye et al., ECS Trans., 50(9) 2013, p. 1007-10111. The development of tensile strain and the saturation in active carrier is attributed to the presence of local complexes while their dispersal on annealing is attributed to strain reduction and increase in active carrier density. However, the existence of such local complexes is not proven and a fundamental void exists in understanding the structure-property correlation in Si:P films. In this respect, our work investigates the reason behind the evolution of strain and electrical properties in the as-grown and annealed Si:P epitaxial layers using ab-initio techniques and corroborate the results with physical characterization techniques. It will be shown that the strain developed in Si:P films is not due to any specific complexes while the formation of Phosphorus-vacancy complexes will be shown responsible for the carrier saturation and the increase in resistivity in the as-grown films. Interstitial/precipitate formation is suggested to be a reason for the strain loss in the annealed films. (C) The Author(s) 2018. Published by ECS.
	Address
	Corporate Author				Thesis
	Publisher	Electrochemical society	Place of Publication	Pennington (N.J.)	Editor
	Language		Wos	000440834200010	Publication Date	2018-05-01
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-8769; 2162-8777	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.787	Times cited	4	Open Access	OpenAccess
	Notes				Approved	Most recent IF: 1.787
	Call Number	UA @ lucian @ c:irua:153204			Serial	5122
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	Author	Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W.
	Title	Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers			Type	A1 Journal article
	Year	2019	Publication	ECS journal of solid state science and technology	Abbreviated Journal	Ecs J Solid State Sc
	Volume	8	Issue	4	Pages	P209-P216
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	Si:C and Si:C:P alloys are potential candidates for source-drain stressor applications in n-type Fin Field Effect Transistors (FinFETs). Increasing the C content to achieve high strain results in the arrangement of C atoms as third nearest neighbors (3nn) in the Si: C lattice. During thermal annealing, the presence of C atoms as 3nn may promote clustering at the interstitial sites, causing loss of stress. The concentration of C atoms as 3nn is reduced by the incorporation of a small amount of Ge atoms during the growth, whereas in-situ P doping does not influence this 3nn distribution [J Solid State Sci. Technol vol 6, p 755, 2017]. Small amounts of Ge are provided during low temperature selective epitaxial growth scheme, which are based on cyclic deposition and etching (CDE). In this work, we aim to provide physical insights into the aforementioned phenomena, to understand the behavior of 3nn C atoms and the types of defects that are formed in the annealed Si: C films. Using ab-initio simulations, the Ge-C interaction in the Si matrix is investigated and this insight is used to explain how the Ge incorporation leads to a reduced 3nn distribution of the C atoms. The interaction between C and P in the Si: C: P films is also investigated to explain why the P incorporation has not led to a reduction in the 3nn distribution. We then report on the Raman characterization of Si: C layers subjected to post epi annealing. As the penetration depth of the laser is dependent on the wavelength, Raman measurements at two different wavelengths enable us to probe the depth distribution of 3nn C atoms after applying different annealing conditions. We observed a homogeneous loss in 3nn C throughout the layer. Whereas in the kinematic modeling of high resolution X-ray diffraction spectra, a gradient in the substitutional C loss was observed close to the epitaxial layer/substrate interface. This gradient can be due to the out diffusion of C atoms into the Si substrate or to the formation of interstitial C clusters, which cannot be distinguished in HR-XRD. Deep Level Transient Spectroscopy indicated that the prominent out-diffusing species was interstitial CO complex while the interstitial C defects were also prevalent in the epi layer. (c) 2019 The Electrochemical Society.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000465069200001	Publication Date	2019-04-18
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-8769; 2162-8777	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	1.787	Times cited		Open Access	Not_Open_Access
	Notes				Approved	Most recent IF: 1.787
	Call Number	UA @ admin @ c:irua:160399			Serial	5275
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	Author	Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G.
	Title	Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations			Type	A1 Journal article
	Year	2015	Publication	ECS journal of solid state science and technology	Abbreviated Journal	Ecs J Solid State Sc
	Volume	4	Issue	4	Pages	N3127-N3133
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract	The bulk properties of elementary metals and copper based binary alloys have been investigated using automated first-principles simulations to evaluate their potential to replace copper and tungsten as interconnecting wires in the coming CMOS technology nodes. The intrinsic properties of the screened candidates based on their cohesive energy and on their electronic properties have been used as a metrics to reflect their resistivity and their sensitivity to electromigration. Using these values, the 'performances' of the alloys have been benchmarked with respect to the Cu and W ones. It turns out that for some systems, alloying Cu with another element leads to a reduced tendency to electromigration. This is however done at the expense of a decrease of the conductivity of the alloy with respect to the bulk metal. (C) 2014 The Electrochemical Society. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher	Electrochemical society	Place of Publication	Pennington (N.J.)	Editor
	Language		Wos	000349547900018	Publication Date	2014-11-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-8769;2162-8777;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.787	Times cited	19	Open Access
	Notes				Approved	Most recent IF: 1.787; 2015 IF: 1.558
	Call Number	c:irua:125296			Serial	1150
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	Author	Charkin, D.O.; Plokhikh, I.V.; Kazakov, S.M.; Kalmykov, S.N.; Akinfiev, V.S.; Gorbachev, A.V.; Batuk, M.; Abakumov, A.M.; Teterin, Y.A.; Maslakov, K.I.; Teterin, A.Y.; Ivanov, K.E.
	Title	Synthesis and structural characterization of a novel Sillén – Aurivillius bismuth oxyhalide, PbBi3VO7.5Cl, and its derivatives			Type	A1 Journal article
	Year	2018	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	75	Issue		Pages	27-33
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	A new Sillen – Aurivillius family of layered bismuth oxyhalides has been designed and successfully constructed on the basis of PbBiO2X(X = halogen) synthetic perites and g-form of Bi2VO5.5 solid elec- trolyte. This demonstrates, for the first time, the ability of the latter to serve as a building block in construction of mixed-layer structures. The parent compound PbBi3VO7.5-dCl (d = 0.05) has been investigated by powder XRD, TEM, XPS methods and magnetic susceptibility measurements. An unexpected but important condition for the formation of the mixed-layer structure is partial (ca. 5%) reduction of VV into VIV which probably suppresses competitive formation of apatite-like Pb – Bi vanadates. This reduction also stabilizes the g polymorphic form of Bi2VO5.5 not only in the intergrowth structure, but in Bi2V1-xMxO5.5-y (M – Nb, Sb) solid solutions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000418566200005	Publication Date	2017-11-21
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	1	Open Access	Not_Open_Access
	Notes	The work was partially supported by M.V. Lomonosov Moscow State University Program of Development and Russian Science Foundation under Grant No.14-13-00738. We also thank Dr. K.V. Zakharov (MSU) for the magnetic measurements of the PbBi3- VO7.5Cl sample.			Approved	Most recent IF: 1.811
	Call Number	EMAT @ emat @c:irua:147239			Serial	4769
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	Author	Floros, N.; Hervieu, M.; Van Tendeloo, G.; Michel, C.; Maignan, A.; Raveau, B.
	Title	The layered manganate Sr_4-xBa_xMn₃O₁₀: synthesis, structural and magnetic properties			Type	A1 Journal article
	Year	2000	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	2	Issue	1	Pages	1-9
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000087149500001	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	29	Open Access
	Notes				Approved	Most recent IF: 1.811; 2000 IF: 0.625
	Call Number	UA @ lucian @ c:irua:54695			Serial	1805
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	Author	Lobanov, M.V.; Abakumov, A.M.; Sidorova, A.V.; Rozova, M.G.; D'yachenko, O.G.; Antipov, E.V.; Hadermann, J.; Van Tendeloo, G.
	Title	Synthesis and investigation of novel Mn-based oxyfluoride Sr₂Mn₂O_5-xF_1+x			Type	A1 Journal article
	Year	2002	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	4	Issue		Pages	19-22
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000174141100004	Publication Date	2002-07-25
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	21	Open Access
	Notes				Approved	Most recent IF: 1.811; 2002 IF: 1.667
	Call Number	UA @ lucian @ c:irua:40346			Serial	3432
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	Author	Enjalbert, R.; Galy, J.; Castro, A.; Lidin, S.; Withers, R.; Van Tendeloo, G.
	Title	Order and twining in Sb₂W_0.75Mo_0.25O₆			Type	A1 Journal article
	Year	2003	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	5	Issue	5	Pages	721-724
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000183284700006	Publication Date	2003-05-19
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	3	Open Access
	Notes				Approved	Most recent IF: 1.811; 2003 IF: 1.327
	Call Number	UA @ lucian @ c:irua:54697			Serial	2500
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	Author	Abakumov, A.M.; Mironov, A.V.; Govorov, V.A.; Lobanov, M.V.; Rozova, M.G.; Antipov, E.V.; Lebedev, O.I.; Van Tendeloo, G.
	Title	Synthesis and structural investigations on the new Sr_1.32Mn_0.83Cu_0.17O₃ compound			Type	A1 Journal article
	Year	2003	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	5	Issue	8	Pages	1117-1125
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000185204900005	Publication Date	2003-06-30
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	8	Open Access
	Notes				Approved	Most recent IF: 1.811; 2003 IF: 1.327
	Call Number	UA @ lucian @ c:irua:54696			Serial	3436
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	Author	Abakumov, A.M.; Rozova, M.G.; Alekseeva, A.M.; Kovba, M.L.; Antipov, E.V.; Lebedev, O.I.; Van Tendeloo, G.
	Title	Synthesis and structure of Sr₂MnGaO_5+\delta brownmillerites with variable oxygen content			Type	A1 Journal article
	Year	2003	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	5	Issue	6	Pages	871-882
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000184765000005	Publication Date	2003-06-21
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	12	Open Access
	Notes				Approved	Most recent IF: 1.811; 2003 IF: 1.327
	Call Number	UA @ lucian @ c:irua:54698			Serial	3445
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	Author	Lazoryak, B.I.; Morozov, V.A.; Belik, A.A.; Stefanovich, S.Y.; Grebenev, V.V.; Leonidov, I.A.; Mitberg, E.B.; Davydov, S.A.; Lebedev, O.I.; Van Tendeloo, G.
	Title	Ferroelectric phase transition in the whitlockite-type Ca₉Fe(PO₄)₇; crystal structure of the paraelectric phase at 923 K			Type	A1 Journal article
	Year	2004	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	6	Issue	2	Pages	185-195
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000220312700005	Publication Date	2004-02-06
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	41	Open Access
	Notes				Approved	Most recent IF: 1.811; 2004 IF: 1.598
	Call Number	UA @ lucian @ c:irua:54699			Serial	1180
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	Author	Lebedev, O.I.; Van Tendeloo, G.; Collart, O.; Cool, P.; Vansant, E.F.
	Title	Structure and microstructure of nanoscale mesoporous silica spheres			Type	A1 Journal article
	Year	2004	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	6	Issue		Pages	489-498
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000221604500011	Publication Date	2004-03-20
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	42	Open Access
	Notes	Pai/Iuap P5/01			Approved	Most recent IF: 1.811; 2004 IF: 1.598
	Call Number	UA @ lucian @ c:irua:46262			Serial	3289
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	Author	Abakumov, A.M.; Kalyuzhnaya, A.S.; Rozova, M.G.; Antipov, E.V.; Hadermann, J.; Van Tendeloo, G.
	Title	Compositionally induced phase transition in the Ca₂MnGa_1-xAl_xO₅ solid solutions: ordering of tetrahedral chains in brownmillerite structure			Type	A1 Journal article
	Year	2005	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	7	Issue	7	Pages	801-811
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000230259500001	Publication Date	2005-04-30
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	38	Open Access
	Notes	IAP V-1; RFBR 04-03-32785-a.			Approved	Most recent IF: 1.811; 2005 IF: 1.708
	Call Number	UA @ lucian @ c:irua:54700			Serial	448
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	Author	Malakho, A.P.; Morozov, V.A.; Pokholok, K.V.; Lazoryak, B.I.; Van Tendeloo, G.
	Title	Layered ordering of vacancies of lead iron phosphate Pb₃Fe₂(PO₄)₄			Type	A1 Journal article
	Year	2005	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	7	Issue	4	Pages	397-404
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000228951300007	Publication Date	2005-03-22
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	7	Open Access
	Notes				Approved	Most recent IF: 1.811; 2005 IF: 1.708
	Call Number	UA @ lucian @ c:irua:54701			Serial	1806
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	Author	Khobrakova, E.T.; Morozov, V.A.; Khasanov, S.S.; Tsyrenova, G.D.; Khaikina, E.G.; Lebedev, O.I.; Van Tendeloo, G.; Lazoryak, B.I.
	Title	New molybdenum oxides Ag₄M₂Zr(MoO₄)₆ (M=Mg, Mn, Co, Zn) with a channel-like structure			Type	A1 Journal article
	Year	2005	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	7	Issue	11	Pages	1397-1405
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000233620600014	Publication Date	2005-10-15
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	9	Open Access
	Notes				Approved	Most recent IF: 1.811; 2005 IF: 1.708
	Call Number	UA @ lucian @ c:irua:54703			Serial	2327
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	Author	Kremer, S.P.B.; Kirschhock, C.E.A.; Aerts, A.; Aerts, C.A.; Houthoofd, K.J.; Grobet, P.J.; Jacobs, P.A.; Lebedev, O.I.; Van Tendeloo, G.; Martens, J.A.
	Title	Zeotile-2: a microporous analogue of MCM-48			Type	A1 Journal article
	Year	2005	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	7	Issue	7	Pages	861-867
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000230259500006	Publication Date	2005-04-20
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	10	Open Access
	Notes				Approved	Most recent IF: 1.811; 2005 IF: 1.708
	Call Number	UA @ lucian @ c:irua:54702			Serial	3931
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	Author	Hadermann, J.; Abakumov, A.M.; Nikolaev, I.V.; Antipov, E.V.; Van Tendeloo, G.
	Title	Local structure of perovskite-based “Pb₂Fe₂O₅”			Type	A1 Journal article
	Year	2008	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	10	Issue	4	Pages	382-389
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000256200200003	Publication Date	2008-01-20
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	29	Open Access
	Notes				Approved	Most recent IF: 1.811; 2008 IF: 1.742
	Call Number	UA @ lucian @ c:irua:69289			Serial	1832
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	Author	Lepoittevin, C.; Malo, S.; Van Tendeloo, G.; Hervieu, M.
	Title	Synthesis and structural mechanisms of the 2201-type ferrites and polytypes: Fe₂(Sr_2-xA_x)FeO_6.5-\delta/2 (A = Ba, La, Tl, Pb and Bi)			Type	A1 Journal article
	Year	2009	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	11	Issue	3	Pages	595-607
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	The Fe2(Sr2 − xAx)FeO6.5 − ä/2 systems have been investigated, by doping the iron rich 2201-type parent structure with Ba2+, La3+ and 5d10 post-transition cations. The syntheses have been carried out up to the limit of the 2201-type solid solutions, in order to test the role of the double iron layer Fe2O2.5 − ä/2. The localisation of the charge carriers in these compounds is consistent with their strong antiferro-magnetism. The investigation was then carried out in the transition part of the diagram up to the formation of stable phases. The study of structural mechanisms was carried using high resolution electron microscopy (transmission and scanning transmission), electron diffraction and energy dispersive spectroscopy. Different non-stoichiometry mechanisms are observed, depending on the electronic structure and chemical properties of the doping elements. The specific behavior of the modulated double iron layer is discussed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000264644800001	Publication Date	2008-12-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	3	Open Access
	Notes	Esteem 026019			Approved	Most recent IF: 1.811; 2009 IF: 1.675
	Call Number	UA @ lucian @ c:irua:76416			Serial	3437
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	Author	Hervieu, M.; Damay, F.; Poienar, M.; Elkaim, E.; Rouquette, J.; Abakumov, A.M.; Van Tendeloo, G.; Maignan, A.; Martin, C.
	Title	Nanostructures in LuFe₂O_4+\delta			Type	A1 Journal article
	Year	2013	Publication	Solid state sciences	Abbreviated Journal	Solid State Sci
	Volume	23	Issue		Pages	26-34
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	A LuFe2O4+delta sample, previously characterized by X-ray synchrotron and neutron diffraction, has been studied by electron microscopy techniques, in order to get a precise description of its micro- and nanostructures at room temperature. The X-ray synchrotron data vs. temperature show that the monoclinic distortion is associated with the charge ordering; this distortion results in elongated twinning domains, which enhance the complexity of the microstructural state at room temperature. The structural modulation associated with oxygen excess is observed in large domains inside a non modulated matrix, in contrast with the modulations associated with the charge ordering of the Fe2+ and Fe3+ species, which are mostly short-range. The investigation of the nature and density of defects in the sample shows that they are nano-scaled, preserving the regularity of the layer stacking mode, and limited to the formation of one- or two-units large stacking faults, associated with gliding mechanisms. Based on these observations, an original description of the LuFe2O4 ferrite structure, through puckered [LuO4](infinity) sandwiching [Fe-2](infinity) layers, is proposed. (C) 2013 Elsevier Masson SAS. All rights reserved.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam	Editor
	Language		Wos	000324156200005	Publication Date	2013-06-13
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1293-2558;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.811	Times cited	7	Open Access
	Notes				Approved	Most recent IF: 1.811; 2013 IF: 1.679
	Call Number	UA @ lucian @ c:irua:111196			Serial	2276
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	Author	Akamine, H.; Mitsuhara, M.; Nishida, M.; Samaee, V.; Schryvers, D.; Tsukamoto, G.; Kunieda, T.; Fujii, H.
	Title	Precipitation behaviors in Ti-2.3 Wt Pct Cu alloy during isothermal and two-step aging			Type	A1 Journal article
	Year	2021	Publication	Metallurgical And Materials Transactions A-Physical Metallurgy And Materials Science	Abbreviated Journal	Metall Mater Trans A
	Volume	52	Issue		Pages	2760-2772
	Keywords	A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
	Abstract	Time evolution of precipitates related to age-hardening in Ti-2.3 wt pct Cu alloys was investigated by electron microscopy. In isothermal aging at 723 K, the hardness increases continuously owing to precipitation strengthening, whereas in two-step aging where the aging temperature is switched from 673 K to 873 K after 100 hours, the hardness is found to drastically drop after the aging temperature switches. In isothermal aging, metastable and stable precipitates are independently nucleated, whereas characteristic V-shaped clusters of precipitates are observed during the two-step aging. It is revealed by atomic-scale observations that the V-shaped clusters are composed of metastable and stable precipitates and each type of precipitate has a different orientation relationship with the alpha phase: (10 (3) over bar)//(0001)(alpha) and [0 (1) over bar0]//respectively. The drop in hardness during two-step aging can be explained by a synergistic effect of decreased precipitation strengthening and solid solution strengthening. (C) The Minerals, Metals & Materials Society and ASM International 2021
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000644823000001	Publication Date	2021-04-27
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1073-5623	ISBN		Additional Links	UA library record; WoS full record
	Impact Factor	1.874	Times cited		Open Access	OpenAccess
	Notes				Approved	Most recent IF: 1.874
	Call Number	UA @ admin @ c:irua:178222			Serial	6786
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	Author	Chizhov, A.S.; Rumyantseva, M.N.; Vasiliev, R.B.; Filatova, D.G.; Drozdov, K.A.; Krylov, I.V.; Marchevsky, A.V.; Karakulina, O.M.; Abakumov, A.M.; Gaskov, A.M.
	Title	Visible light activation of room temperature NO2 gas sensors based on ZnO, SnO2 and In2O3 sensitized with CdSe quantum dots			Type	A1 Journal article
	Year	2016	Publication	Thin solid films : an international journal on the science and technology of thin and thick films	Abbreviated Journal	Thin Solid Films
	Volume	618	Issue	618	Pages	253-262
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract	This work reports the analysis of visible light activation of room temperature NO2 gas sensitivity of metal oxide semiconductors (MOS): blank and CdSe quantum dots (QDs) sensitized nanocrystallinematrixes ZnO, SnO2 and In2O3. Nanocrystalline metal oxides (MOx) ZnO, SnO2, In2O3 were synthesized by the precipitation method. Colloidal CdSe QDs were obtained by high temperature colloidal synthesis. Sensitization was effectuated by direct adsorption of CdSe QDs stabilized with oleic acid on MOx surface. The role of illumination consists in generation of electrons, which can be transferred into MOx conduction band, and holes that can recombine with the electrons previously trapped by the chemisorbed acceptor species and thus activate desorption of analyte molecules. Under green light illumination for blank SnO2 and In2O3 matrixes the indirect consequential mechanism for the generation of holes is proposed. Anothermechanismis realized in the presence of CdSe QDs. In this case the electron-hole pair is generated in the CdSe quantum dot. Sensor measurements demonstrated that synthesizedmaterials can be used for NO2 detection under visible (green) light illumination at room temperature without any thermal heating.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Wos	000389164400005	Publication Date	2016-09-18
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0040-6090	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.879	Times cited	19	Open Access
	Notes	The work was financially supported by Russian Foundation for Basic Research grant no. 15-03-03026.			Approved	Most recent IF: 1.879
	Call Number	EMAT @ emat @ c:irua:138598			Serial	4321
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	Author	Schryvers, D.; Yandouzi, M.; Toth, L.
	Title	TEM study of B2 + L1₂ decomposition in a nanoscale Ni-rich Ni-Al film			Type	A1 Journal article
	Year	1998	Publication	Thin solid films : an international journal on the science and technology of thin and thick films	Abbreviated Journal	Thin Solid Films
	Volume	326	Issue		Pages	126-133
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam : Elsevier	Editor
	Language		Wos	000075693800017	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0040-6090;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.879	Times cited	1	Open Access
	Notes				Approved	Most recent IF: 1.879; 1998 IF: 1.019
	Call Number	UA @ lucian @ c:irua:48371			Serial	3487
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	Author	Conard, T.; de Witte, H.; Loo, R.; Verheyen, P.; Vandervorst, W.; Caymax, M.; Gijbels, R.
	Title	XPS and TOFSIMS studies of shallow Si/Si_1-xGe_x/Si layers			Type	A1 Journal article
	Year	1999	Publication	Thin solid films : an international journal on the science and technology of thin and thick films	Abbreviated Journal	Thin Solid Films
	Volume	343/344	Issue		Pages	583-586
	Keywords	A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Amsterdam : Elsevier	Editor
	Language		Wos	000081103100149	Publication Date	2002-07-26
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0040-6090;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.879	Times cited	1	Open Access
	Notes				Approved	Most recent IF: 1.879; 1999 IF: 1.101
	Call Number	UA @ lucian @ c:irua:24934			Serial	3926
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	Author	Mahieu, S.; Ghekiere, P.; de Winter, G.; Depla, D.; de Gryse, R.; Lebedev, O.I.; Van Tendeloo, G.
	Title	Influence of the Ar/O₂ ratio on the growth and biaxial alignment of yttria stabilized zirconia layers during reactive unbalanced magnetron sputtering			Type	A1 Journal article
	Year	2005	Publication	Thin solid films : an international journal on the science and technology of thin and thick films	Abbreviated Journal	Thin Solid Films
	Volume	484	Issue		Pages	18-25
	Keywords	A1 Journal article; Electron microscopy for materials research (EMAT)
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Lausanne	Editor
	Language		Wos	000230045900003	Publication Date	2005-03-01
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0040-6090;	ISBN		Additional Links	UA library record; WoS full record; WoS citing articles
	Impact Factor	1.879	Times cited	23	Open Access
	Notes				Approved	Most recent IF: 1.879; 2005 IF: 1.569
	Call Number	UA @ lucian @ c:irua:54879			Serial	1656
Permanent link to this record