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  Author Title Year Publication Volume Times cited Additional Links Links
Sels, D.; Sorée, B.; Groeseneken, G. Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor 2011 Journal of computational electronics 10 12 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors 2014 Journal of applied physics 115 15 UA library record; WoS full record; WoS citing articles doi
Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations 2012 Solid state electronics 71 2 UA library record; WoS full record; WoS citing articles pdf doi
Balaban, S.N.; Pokatilov, E.P.; Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; van Rossum, M.; Sorée, B. Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET 2002 Solid-State Electronics 46 16 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor 2004 Journal of applied physics 96 14 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor 2003 Journal of applied physics 93 16 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics 2008 Solid state communications 147 8 UA library record; WoS full record; WoS citing articles doi
Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. Resistivity scaling and electron relaxation times in metallic nanowires 2014 Journal of applied physics 116 17 UA library record; WoS full record; WoS citing articles url doi
Van de Put, M.; Thewissen, M.; Magnus, W.; Sorée, B.; Sellier, J.M. Spectral force approach to solve the time-dependent Wigner-Liouville equation 2014 2014 International Workshop On Computational Electronics (iwce) UA library record; WoS full record;
Toledano-Luque, M.; Matagne, P.; Sibaja-Hernandez, A.; Chiarella, T.; Ragnarsson, L.-A.; Sorée, B.; Cho, M.; Mocuta, A.; Thean, A. Superior reliability of junctionless pFinFETs by reduced oxide electric field 2014 IEEE electron device letters 35 13 UA library record; WoS full record; WoS citing articles doi
Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. Temperature-dependent modeling and characterization of through-silicon via capacitance 2011 IEEE electron device letters 32 27 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation 2014 Journal of applied physics 115 26 UA library record; WoS full record; WoS citing articles doi
Magnus, W.; Brosens, F.; Sorée, B. Time dependent transport in 1D micro- and nanostructures: solving the Boltzmann and Wigner-Boltzmann equations 2009 Journal of physics : conference series 193 2 UA library record; WoS full record; WoS citing articles url doi
Pathangi, H.; Cherman, V.; Khaled, A.; Sorée, B.; Groeseneken, G.; Witvrouw, A. Towards CMOS-compatible single-walled carbon nanotube resonators 2013 Microelectronic engineering 107 6 UA library record; WoS full record; WoS citing articles doi
Magnus, W.; Carrillo-Nunez, H.; Sorée, B. Transport in nanostructures 2011 UA library record
Nourbakhsh, A.; Cantoro, M.; Klekachev, A.; Clemente, F.; Sorée, B.; van der Veen, M.H.; Vosch, T.; Stesmans, A.; Sels, B.; de Gendt, S. Tuning the Fermi level of SiO2-supported single-layer graphene by thermal annealing 2010 Journal Of Physical Chemistry C 114 54 UA library record; WoS full record; WoS citing articles doi
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. Tunneling-lifetime model for metal-oxide-semiconductor structures 2009 Physical review : B : solid state 80 2 UA library record; WoS full record; WoS citing articles url doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. Zener tunneling in semiconductors under nonuniform electric fields 2010 Journal of applied physics 107 22 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G. 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url doi
Moors, K.; Sorée, B.; Magnus, W. Analytic solution of Ando's surface roughness model with finite domain distribution functions 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors 2016 Applied physics letters 108 13 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors 2015 Journal of applied physics 118 9 UA library record; WoS full record; WoS citing articles doi
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. Inter-ribbon tunneling in graphene: An atomistic Bardeen approach 2016 Journal of applied physics 119 6 UA library record; WoS full record; WoS citing articles url doi
Moors, K.; Sorée, B.; Magnus, W. Modeling and tackling resistivity scaling in metal nanowires 2015 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC UA library record; WoS full record url
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.; Fischetti, M.V. Modeling of inter-ribbon tunneling in graphene 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url
Moors, K.; Sorée, B.; Magnus, W. Modeling surface roughness scattering in metallic nanowires 2015 Journal of applied physics 118 11 UA library record; WoS full record; WoS citing articles url doi
Andrikopoulos, D.; Sorée, B.; De Boeck, J. Skyrmion-induced bound states on the surface of three-dimensional topological insulators 2016 Journal of applied physics 119 8 UA library record; WoS full record; WoS citing articles url doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Uniform strain in heterostructure tunnel field-effect transistors 2016 IEEE electron device letters 37 17 UA library record; WoS full record; WoS citing articles pdf url doi
Moors, K.; Sorée, B.; Magnus, W. Validity criteria for Fermi's golden rule scattering rates applied to metallic nanowires 2016 Journal of physics : condensed matter 28 2 UA library record; WoS full record; WoS citing articles pdf doi
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors 2016 Solid-State Device Research (ESSDERC), European Conference T2 – 46th European Solid-State Device Research Conference (ESSDERC) / 42nd, European Solid-State Circuits Conference (ESSCIRC), SEP 12-15, 2016, Lausanne, SWITZERLAND UA library record; WoS full record
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