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  Author Title Year Publication (down) Volume Times cited Additional Links Links
Gou, F.; Neyts, E.; Eckert, M.; Tinck, S.; Bogaerts, A. Molecular dynamics simulations of Cl+ etching on a Si(100) surface 2010 Journal of applied physics 107 15 UA library record; WoS full record; WoS citing articles doi
Sen, H.S.; Sahin, H.; Peeters, F.M.; Durgun, E. Monolayers of MoS2 as an oxidation protective nanocoating material 2014 Journal of applied physics 116 52 UA library record; WoS full record; WoS citing articles doi
Dhong, H.M.; Zhang, J.; Peeters, F.M.; Xu, W. Optical conductance and transmission in bilayer graphene 2009 Journal of applied physics 106 11 UA library record; WoS full record; WoS citing articles doi
Li, L.L.; Xu, W.; Peeters, F.M. Optical conductivity of topological insulator thin films 2015 Journal of applied physics 117 9 UA library record; WoS full record; WoS citing articles doi
Neyts, E.; Yan, M.; Bogaerts, A.; Gijbels, R. Particle-in-cell/Monte Carlo simulations of a low-pressure capacitively coupled radio-frequency discharge: effect of adding H2 to an Ar discharge 2003 Journal of applied physics 93 15 UA library record; WoS full record; WoS citing articles doi
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. Phonon-assisted Zener tunneling in a cylindrical nanowire transistor 2013 Journal of applied physics 113 4 UA library record; WoS full record; WoS citing articles doi
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers 2009 Journal of applied physics 106 29 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors 2014 Journal of applied physics 115 15 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor 2004 Journal of applied physics 96 14 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor 2003 Journal of applied physics 93 16 UA library record; WoS full record; WoS citing articles doi
Papp, G.; Peeters, F.M. Resistance maps for a submicron Hall electrosensor in the diffusive regime 2007 Journal of applied physics 101 7 UA library record; WoS full record; WoS citing articles url doi
Papp, G.; Peeters, F.M. Resistance maps from local probing of a ballistic mesoscopic Hall bar 2007 Journal of applied physics 101 5 UA library record; WoS full record; WoS citing articles url doi
Cornelissens, Y.G.; Peeters, F.M. Response function of a Hall magnetosensor in the diffusive regime 2002 Journal of applied physics 92 24 UA library record; WoS full record; WoS citing articles doi
Carrillo-Nuñez, H.; Magnus, W.; Peeters, F.M. A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus 2010 Journal of applied physics 108 7 UA library record; WoS full record; WoS citing articles doi
Shestakov, M.V.; Meledina, M.; Turner, S.; Tikhomirov, V.K.; Verellen, N.; Rodríguez, V.D.; Velázquez, J.J.; Van Tendeloo, G.; Moshchalkov, V.V. The size and structure of Ag particles responsible for surface plasmon effects and luminescence in Ag homogeneously doped bulk glass 2013 Journal of applied physics 114 19 UA library record; WoS full record; WoS citing articles pdf doi
Yan, M.; Bogaerts, A.; Gijbels, R.; Goedheer, W.J. Spatial behavior of energy relaxation of electrons in capacitively coupled discharges: comparison between Ar and SiH4 2000 Journal of applied physics 87 14 UA library record; WoS full record; WoS citing articles doi
Papp, G.; Borza, S.; Peeters, F.M. Spin transport in a Mn-doped ZnSe asymmetric tunnel structure 2005 Journal of applied physics 97 26 UA library record; WoS full record; WoS citing articles doi
Tadić, M.; Peeters, F.M.; Janssens, K.L.; Korkusinski, M.; Hawrylak, P. Strain and band edges in single and coupled cylindrical InAs/GaAs and InP/InGaP self-assembled quantum dots 2002 Journal of applied physics 92 73 UA library record; WoS full record; WoS citing articles url doi
Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; Hevesi, K.; Gensterblum, G.; Yu, L.M.; Pireaux, J.J.; Grey, F.; Bohr, J. Structural defects and epitaxial rotation of C60 and C70 (111) films on GeS(001) 1996 Journal of applied physics 80 6 UA library record; WoS full record; WoS citing articles pdf doi
Lebedev, O.I.; Verbeeck, J.; Van Tendeloo, G.; Dubourdieu, C.; Rosina, M.; Chaudouët, P. Structure and properties of artificial [(La0.7Sr0.3MnO3)m(SrTiO3)n]15 superlattices on (001)SrTiO3 2003 Journal of applied physics 94 22 UA library record; WoS full record; WoS citing articles pdf doi
Rossell, M.D.; Lebedev, O.I.; Van Tendeloo, G.; Hayashi, N.; Terashima, T.; Takano, M. Structure of epitaxial Ca2Fe2O5 films deposited on different perovskite-type substrates 2004 Journal of applied physics 95 16 UA library record; WoS full record; WoS citing articles pdf doi
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation 2014 Journal of applied physics 115 26 UA library record; WoS full record; WoS citing articles doi
Zhao, C.X.; Xu, W.; Li, L.L.; Zhang, C.; Peeters, F.M. Terahertz plasmon-polariton modes in graphene driven by electric field inside a Fabry-Perot cavity 2015 Journal of applied physics 117 13 UA library record; WoS full record; WoS citing articles doi
Chu, D.P.; Peeters, F.M.; Kolodinski, S.; Roca, E. Theoretical investigation of CoSi2/Si1-xGex detectors: influence of a Si tunneling barrier on the electro-optical characteristics 1996 Journal of applied physics 79 3 UA library record; WoS full record; WoS citing articles
Berdiyorov, G.R.; Bahlouli, H.; Peeters, F.M. Theoretical study of electronic transport properties of a graphene-silicene bilayer 2015 Journal of applied physics 117 10 UA library record; WoS full record; WoS citing articles url doi
de Sousa, J.S.; Covaci, L.; Peeters, F.M.; Farias, G.A. Time-dependent investigation of charge injection in a quantum dot containing one electron 2012 Journal of applied physics 112 1 UA library record; WoS full record; WoS citing articles doi
Papp, G.; Peeters, F.M. Tunable giant magnetoresistance with magnetic barriers 2006 Journal of applied physics 100 49 UA library record; WoS full record; WoS citing articles doi
Neyts, E.; Bogaerts, A.; van de Sanden, M.C.M. Unraveling the deposition mechanism in a-C:H thin-film growth: a molecular-dynamics study for the reaction behavior of C3 and C3H radicals with a-C:H surfaces 2006 Journal of applied physics 99 25 UA library record; WoS full record; WoS citing articles doi
De Schutter, B.; Van Stiphout, K.; Santos, N.M.; Bladt, E.; Jordan-Sweet, J.; Bals, S.; Lavoie, C.; Comrie, C.M.; Vantomme, A.; Detavernier, C. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111) 2016 Journal of applied physics 119 14 UA library record; WoS full record; WoS citing articles pdf url doi
Clima, S.; Chen, Y.Y.; Chen, C.Y.; Goux, L.; Govoreanu, B.; Degraeve, R.; Fantini, A.; Jurczak, M.; Pourtois, G. First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device 2016 Journal of applied physics 119 17 UA library record; WoS full record; WoS citing articles url doi
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