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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Clima, S.; O'Sullivan, B.J.; Ronchi, N.; Bardon, M.G.; Banerjee, K.; Van den Bosch, G.; Pourtois, G.; van Houdt, J. Ferroelectric switching in FEFET : physics of the atomic mechanism and switching dynamics in HfZrOx, HfO2 with oxygen vacancies and Si dopants 2020 UA library record; WoS full record; WoS citing articles pdf doi
Guo, J.; Clima, S.; Pourtois, G.; Van Houdt, J. Identifying alternative ferroelectric materials beyond Hf(Zr)O-₂ 2020 Applied Physics Letters 117 UA library record; WoS full record; WoS citing articles doi
Khanam, A.; Vohra, A.; Slotte, J.; Makkonen, I.; Loo, R.; Pourtois, G.; Vandervorst, W. A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-XSnx 2020 Journal Of Applied Physics 127 UA library record; WoS full record; WoS citing articles url doi
Vohra, A.; Makkonen, I.; Pourtois, G.; Slotte, J.; Porret, C.; Rosseel, E.; Khanam, A.; Tirrito, M.; Douhard, B.; Loo, R.; Vandervorst, W. Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx 2020 Ecs Journal Of Solid State Science And Technology 9 UA library record; WoS full record; WoS citing articles url doi
Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice 2020 Journal Of Physical Chemistry C 124 2 UA library record; WoS full record; WoS citing articles pdf doi
Clima, S.; Garbin, D.; Opsomer, K.; Avasarala, N.S.; Devulder, W.; Shlyakhov, I.; Keukelier, J.; Donadio, G.L.; Witters, T.; Kundu, S.; Govoreanu, B.; Goux, L.; Detavernier, C.; Afanas'ev, V.; Kar, G.S.; Pourtois, G. Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles 2020 Physica Status Solidi-Rapid Research Letters 3 UA library record; WoS full record; WoS citing articles pdf doi
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Porret, C.; Loo, R.; Vandervorst, W. Heavily phosphorus doped germanium : strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation 2019 Journal of applied physics 125 1 UA library record; WoS full record; WoS citing articles url doi
Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G. Material relaxation in chalcogenide OTS SELECTOR materials 2019 Microelectronic engineering 215 1 UA library record; WoS full record; WoS citing articles pdf doi
Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers 2019 ECS journal of solid state science and technology 8 UA library record; WoS full record pdf doi
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W. Evolution of phosphorus-vacancy clusters in epitaxial germanium 2019 Journal of applied physics 125 5 UA library record; WoS full record; WoS citing articles pdf doi
Dabral, A.; Lu, A.K.A.; Chiappe, D.; Houssa, M.; Pourtois, G. A systematic study of various 2D materials in the light of defect formation and oxidation 2019 Physical chemistry, chemical physics 21 1 UA library record; WoS full record; WoS citing articles pdf doi
Adelmann, C.; Sankaran, K.; Dutta, S.; Gupta, A.; Kundu, S.; Jamieson, G.; Moors, K.; Pinna, N.; Ciofi, I.; Van Elshocht, S.; Bommels, J.; Boccardi, G.; Wilson, C.J.; Pourtois, G.; Tokei, Z. Alternative Metals: from ab initio Screening to Calibrated Narrow Line Models 2018 Proceedings of the IEEE ... International Interconnect Technology Conference T2 – IEEE International Interconnect Technology Conference (IITC), JUN 04-07, 2018, Santa Clara, CA UA library record; WoS full record; WoS citing articles pdf doi
Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations 2018 ECS journal of solid state science and technology 7 2 UA library record; WoS full record; WoS citing articles doi
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Defects in amorphous semiconductors : the case of amorphous indium gallium zinc oxide 2018 Physical review applied 9 7 UA library record; WoS full record; WoS citing articles url doi
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications 2018 ECS journal of solid state science and technology 7 4 UA library record; WoS full record; WoS citing articles url doi
De Clercq, M.; Moors, K.; Sankaran, K.; Pourtois, G.; Dutta, S.; Adelmann, C.; Magnus, W.; Sorée, B. Resistivity scaling model for metals with conduction band anisotropy 2018 Physical review materials 2 UA library record; WoS full record; WoS citing articles url doi
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors 2018 Physical review B 97 2 UA library record; WoS full record; WoS citing articles url doi
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures 2018 ECS journal of solid state science and technology 7 5 UA library record; WoS full record; WoS citing articles url doi
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO 2018 Journal of applied physics 123 4 UA library record; WoS full record; WoS citing articles pdf url doi
Yu, H.; Schaekers, M.; Chew, S.A.; Eyeraert, J.-L.; Dabral, A.; Pourtois, G.; Horiguchi, N.; Mocuta, D.; Collaert, N.; De Meyer, K. Titanium (germano-)silicides featuring 10-9 Ω.cm2 contact resistivity and improved compatibility to advanced CMOS technology 2018 2018 18th International Workshop On Junction Technology (iwjt) UA library record; WoS full record pdf
Sankaran, K.; Moors, K.; Dutta, S.; Adelmann, C.; Tokei, Z.; Pourtois, G. Metallic ceramics for low resitivity interconnects : an ab initio insight 2018 Proceedings of the IEEE ... International Interconnect Technology Conference T2 – IEEE International Interconnect Technology Conference (IITC), JUN 04-07, 2018, Santa Clara, CA UA library record; WoS full record; WoS citing articles pdf
Clima, S.; McMitchell, S.R.C.; Florent, K.; Nyns, L.; Popovici, M.; Ronchi, N.; Di Piazza, L.; Van Houdt, J.; Pourtois, G. First-principles perspective on poling mechanisms and ferroelectric/antiferroelectric behavior of Hf1-xZrxO2 for FEFET applications 2018 2018 Ieee International Electron Devices Meeting (iedm) UA library record; WoS full record; WoS citing articles pdf
Sankaran, K.; Swerts, J.; Carpenter, R.; Couet, S.; Garello, K.; Evans, R.F.L.; Rao, S.; Kim, W.; Kundu, S.; Crotti, D.; Kar, G.S.; Pourtois, G. Evidence of magnetostrictive effects on STT-MRAM performance by atomistic and spin modeling 2018 2018 Ieee International Electron Devices Meeting (iedm) UA library record; WoS full record; WoS citing articles
Pourtois, G.; Dabral, A.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Houssa, M.; Collaert, N.; Horiguchi, N. Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations 2017 Semiconductors, Dielectrics, And Metals For Nanoelectronics 15: In Memory Of Samares Kar 1 UA library record; WoS full record; WoS citing articles pdf doi
Loo, R.; Arimura, H.; Cott, D.; Witters, L.; Pourtois, G.; Schulze, A.; Douhard, B.; Vanherle, W.; Eneman, G.; Richard, O.; Favia, P.; Mitard, J.; Mocuta, D.; Langer, R.; Collaert, N. Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures 2017 Semiconductor Process Integration 10 UA library record; WoS full record pdf doi
Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. Structural characterization of SnS crystals formed by chemical vapour deposition 2017 Journal of microscopy T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND 268 2 UA library record; WoS full record; WoS citing articles pdf doi
Lu, A.K.A.; Houssa, M.; Luisier, M.; Pourtois, G. Impact of layer alignment on the behavior of MoS2-ZrS2 tunnel field-effect transistors : an ab initio study 2017 Physical review applied 8 6 UA library record; WoS full record; WoS citing articles url doi
Clima, S.; Belmonte, A.; Degraeve, R.; Fantini, A.; Goux, L.; Govoreanu, B.; Jurczak, M.; Ota, K.; Redolfi, A.; Kar, G.S.; Pourtois, G. Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories 2017 Journal of computational electronics 16 2 UA library record; WoS full record; WoS citing articles pdf doi
Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. Thickness dependence of the resistivity of platinum-group metal thin films 2017 Journal of applied physics 122 42 UA library record; WoS full record; WoS citing articles doi
de de Meux, A.J.; Bhoolokam, A.; Pourtois, G.; Genoe, J.; Heremans, P. Oxygen vacancies effects in a-IGZO : formation mechanisms, hysteresis, and negative bias stress effects 2017 Physica status solidi : A : applications and materials science 214 8 UA library record; WoS full record; WoS citing articles pdf doi
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