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Author  |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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de Bleecker, K.; Bogaerts, A.; Goedheer, W.J.; Gijbels, R. |
Modelling of formation and transport of nanoparticles in silane discharges |
2004 |
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UA library record |
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de Bleecker, K.; Herrebout, D.; Bogaerts, A.; Gijbels, R.; Descamps, P. |
One-dimensional modelling of a capacitively coupled rf plasma in silane/helium, including small concentrations of O2 and N2 |
2003 |
Journal of physics: D: applied physics |
36 |
|
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Bhoolokam, A.; Pourtois, G.; Genoe, J.; Heremans, P. |
Oxygen vacancies effects in a-IGZO : formation mechanisms, hysteresis, and negative bias stress effects |
2017 |
Physica status solidi : A : applications and materials science |
214 |
8 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor : structure, tail states and strain effects |
2015 |
Journal of physics: D: applied physics |
48 |
23 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor |
2017 |
Journal of physics : condensed matter |
29 |
5 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors |
2018 |
Physical review B |
97 |
2 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Defects in amorphous semiconductors : the case of amorphous indium gallium zinc oxide |
2018 |
Physical review applied |
9 |
7 |
UA library record; WoS full record; WoS citing articles |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO |
2018 |
Journal of applied physics |
123 |
4 |
UA library record; WoS full record; WoS citing articles |
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de Mondt, R.; Adriaensen, L.; Vangaever, F.; Lenaerts, J.; van Vaeck, L.; Gijbels, R. |
Empirical evaluation of metal deposition for the analysis of organic compounds with static secondary ion mass spectrometry (S-SIMS) |
2006 |
Applied surface science |
252 |
9 |
UA library record; WoS full record; WoS citing articles |
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de Vyt, A.; Gijbels, R.; Davock, H.; van Roost, C.; Geuens, I. |
Characterization of AgxAuy nano particles by TEM and STEM |
1999 |
Journal of analytical atomic spectrometry |
14 |
2 |
UA library record; WoS full record; WoS citing articles |
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de Vyt, A.; Gijbels, R.; van Roost, C.; Geuens, I. |
Quantitative analysis of individual AgxAuy nanoparticles by TEM-EDX: track 1 |
1998 |
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UA library record |
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de Witte, H.; Conard, T.; Sporken, R.; Gouttebaron, R.; Magnee, R.; Vandervorst, W.; Caudano, R.; Gijbels, R. |
XPS study of ion induced oxidation of silicon with and without oxygen flooding |
2000 |
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UA library record |
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de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks |
2003 |
Applied surface science |
203 |
15 |
UA library record; WoS full record; WoS citing articles |
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de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding |
2000 |
Surface and interface analysis |
29 |
4 |
UA library record; WoS full record; WoS citing articles |
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de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. |
Study of oxynitrides with dual beam TOF-SIMS |
2000 |
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UA library record |
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de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution |
1999 |
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UA library record; WoS full record; |
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de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. |
Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on wafer surfaces |
2000 |
Journal of the electrochemical society |
147 |
14 |
UA library record; WoS full record; WoS citing articles |
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de Witte, H.; Vandervorst, W.; Gijbels, R. |
Modeling of bombardment induced oxidation of silicon |
2001 |
Journal of applied physics |
89 |
16 |
UA library record; WoS full record; WoS citing articles |
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de Witte, H.; Vandervorst, W.; Gijbels, R. |
Modeling of bombardment induced oxidation of silicon with and without oxygen flooding |
1998 |
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UA library record |
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Deben, C.; Cardenas De La Hoz, E.; Le Compte, M.; Van Schil, P.; Hendriks, J.M.H.; Lauwers, P.; Yogeswaran, S.K.; Lardon, F.; Pauwels, P.; van Laere, S.; Bogaerts, A.; Smits, E.; Vanlanduit, S.; Lin, A. |
OrBITS : label-free and time-lapse monitoring of patient derived organoids for advanced drug screening |
2022 |
Cellular Oncology (2211-3428) |
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UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K. |
Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
9 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K. |
Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates |
2012 |
Journal of vacuum science and technology: A: vacuum surfaces and films |
30 |
41 |
UA library record; WoS full record; WoS citing articles |
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Demuynck, R.; Efimova, I.; Lin, A.; Declercq, H.; Krysko, D.V. |
A 3D cell death assay to quantitatively determine ferroptosis in spheroids |
2020 |
Cells |
9 |
5 |
UA library record; WoS full record; WoS citing articles |
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Depla, D.; Chen, Z.Y.; Bogaerts, A.; Ignatova, V.; de Gryse, R.; Gijbels, R. |
Modeling of the target surface modification by reactive ion implantation during magnetron sputtering |
2004 |
Journal of vacuum science and technology: A: vacuum surfaces and films |
22 |
13 |
UA library record; WoS full record; WoS citing articles |
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Depla, D.; Li, X.Y.; Mahieu, S.; van Aeken, K.; Leroy, W.P.; Haemers, J.; de Gryse, R.; Bogaerts, A. |
Rotating cylindrical magnetron sputtering: simulation of the reactive process |
2010 |
Journal of applied physics |
107 |
15 |
UA library record; WoS full record; WoS citing articles |
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Derzsi, A.; Donko, Z.; Bogaerts, A.; Hoffmann, V. |
The influence of the secondary electron emission coefficient and effect of the gas heating on the calculated electrical characteristics of a grimm type glow discharge cell |
2008 |
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UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. |
On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications |
2018 |
ECS journal of solid state science and technology |
7 |
4 |
UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. |
Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers |
2019 |
ECS journal of solid state science and technology |
8 |
|
UA library record; WoS full record |
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Dinh, D.K.; Trenchev, G.; Lee, D.H.; Bogaerts, A. |
Arc plasma reactor modification for enhancing performance of dry reforming of methane |
2020 |
Journal Of Co2 Utilization |
42 |
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UA library record; WoS full record; WoS citing articles |
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Drukarev, E.; Mikhailov, A.; Rakhimov, K.Y.; Yusupov, H. |
Relativistic photoeffect for s states in a central field |
2020 |
European Physical Journal D |
74 |
|
UA library record; WoS full record |
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