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  Author Title Year Publication Volume Times cited (up) Additional Links Links
Van de Put, M.L. Modeling of quantum electron transport with applications in energy filtering nanostructures 2016 UA library record
Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Ab-initio study of magnetically intercalated platinum diselenide : the impact of platinum vacancies 2021 Materials 14 UA library record; WoS full record; WoS citing articles url doi
Tiwari, S.; Vanherck, J.; Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B. Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy 2021 Physical review research 3 UA library record; WoS full record; WoS citing articles url doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers 2021 npj 2D Materials and Applications 5 UA library record; WoS full record; WoS citing articles url doi
Tiwari, S.; Van de Put, M.L.; Temst, K.; Vandenberghe, W.G.; Sorée, B. Atomistic modeling of spin and electron dynamics in two-dimensional magnets switched by two-dimensional topological insulators 2023 Physical review applied 19 UA library record; WoS full record; WoS citing articles doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Ab initio modeling of few-layer dilute magnetic semiconductors 2021 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX UA library record; WoS full record pdf doi
Reyntjens, P.D.; Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Ab-initio study of magnetically intercalated Tungsten diselenide 2020 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 UA library record; WoS full record pdf doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects 2018 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX UA library record; WoS full record; WoS citing articles pdf doi
Reyntjens, P.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B. Ultrascaled graphene-capped interconnects : a quantum mechanical study 2023 Proceedings of the IEEE ... International Interconnect Technology Conference T2 – IEEE International Interconnect Technology Conference (IITC) / IEEE, Materials for Advanced Metallization Conference (MAM), MAY 22-25, 2023, Dresden, Germany UA library record; WoS full record pdf doi
Van de Put, M.; Thewissen, M.; Magnus, W.; Sorée, B.; Sellier, J.M. Spectral force approach to solve the time-dependent Wigner-Liouville equation 2014 2014 International Workshop On Computational Electronics (iwce) UA library record; WoS full record;
Verreck, D.; Van de Put, M.L.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Dabral, A.; Thean, A.; Groeseneken, G. 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url doi
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B.; Fischetti, M.V. Modeling of inter-ribbon tunneling in graphene 2015 18th International Workshop On Computational Electronics (iwce 2015) UA library record; WoS full record url
Verhulst, A.S.; Verreck, D.; Smets, Q.; Kao, K.-H.; Van de Put, M.; Rooyackers, R.; Sorée, B.; Vandooren, A.; De Meyer, K.; Groeseneken, G.; Heyns, M.M.; Mocuta, A.; Collaert, N.; Thean, A.V.-Y. Perspective of tunnel-FET for future low-power technology nodes 2014 2014 Ieee International Electron Devices Meeting (iedm) UA library record; WoS full record
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors 2017 Simulation of Semiconductor Processes and, Devices (SISPAD)AND DEVICES (SISPAD 2017) UA library record; WoS full record pdf
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Critical behavior of the ferromagnets CrI₃, CrBr₃, and CrGeTe₃ and the antiferromagnet FeCl₂ : a detailed first-principles study 2021 Physical Review B 103 UA library record; WoS full record; WoS citing articles url doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions 2018 Journal of applied physics 124 1 UA library record; WoS full record; WoS citing articles pdf doi
Reyntjens, P.D.; Tiwari, S.; van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Magnetic properties and critical behavior of magnetically intercalated WSe₂ : a theoretical study 2021 2d Materials 8 1 UA library record; WoS full record; WoS citing articles url doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. Phonon-assisted tunneling in direct-bandgap semiconductors 2019 Journal of applied physics 125 2 UA library record; WoS full record; WoS citing articles pdf doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Carrier transport in two-dimensional topological insulator nanoribbons in the presence of vacancy defects 2019 2D materials 6 3 UA library record; WoS full record; WoS citing articles url doi
Moors, K.; Contino, A.; Van de Put, M.L.; Vandenberghe, W.G.; Fischetti, M., V; Magnus, W.; Sorée, B. Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness 2019 Physical review materials 3 4 UA library record; WoS full record; WoS citing articles url doi
Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B. An envelope function formalism for lattice-matched heterostructures 2015 Physica: B : condensed matter 470-471 5 UA library record; WoS full record; WoS citing articles doi
Van de Put, M.L.; Sorée, B.; Magnus, W. Efficient solution of the Wigner-Liouville equation using a spectral decomposition of the force field 2017 Journal of computational physics 350 5 UA library record; WoS full record; WoS citing articles pdf doi
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. Inter-ribbon tunneling in graphene: An atomistic Bardeen approach 2016 Journal of applied physics 119 6 UA library record; WoS full record; WoS citing articles url doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides 2016 Journal of applied physics 120 6 UA library record; WoS full record; WoS citing articles url doi
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. Can p-channel tunnel field-effect transistors perform as good as n-channel? 2014 Applied physics letters 105 8 UA library record; WoS full record; WoS citing articles url doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors 2015 Journal of applied physics 118 9 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors 2014 Journal of applied physics 115 15 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Uniform strain in heterostructure tunnel field-effect transistors 2016 IEEE electron device letters 37 17 UA library record; WoS full record; WoS citing articles pdf url doi
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation 2014 Journal of applied physics 115 26 UA library record; WoS full record; WoS citing articles doi
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models 2014 Journal of applied physics 115 34 UA library record; WoS full record; WoS citing articles doi
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