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  Author Title Year Publication Volume (down) Times cited Additional Links Links
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic 2014 Applied physics letters 105 10 UA library record; WoS full record; WoS citing articles doi
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. Can p-channel tunnel field-effect transistors perform as good as n-channel? 2014 Applied physics letters 105 8 UA library record; WoS full record; WoS citing articles url doi
van Duijn, F.; Osca, J.; Sorée, B. Skyrmion elongation, duplication, and rotation by spin-transfer torque under spatially varying spin current 2021 Physical Review B 104 UA library record; WoS full record; WoS citing articles url doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Critical behavior of the ferromagnets CrI₃, CrBr₃, and CrGeTe₃ and the antiferromagnet FeCl₂ : a detailed first-principles study 2021 Physical Review B 103 UA library record; WoS full record; WoS citing articles url doi
Vanderveken, F.; Mulkers, J.; Leliaert, J.; Van Waeyenberge, B.; Sorée, B.; Zografos, O.; Ciubotaru, F.; Adelmann, C. Confined magnetoelastic waves in thin waveguides 2021 Physical Review B 103 UA library record; WoS full record; WoS citing articles pdf url doi
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. Figure of merit for and identification of sub-60 mV/decade devices 2013 Applied physics letters 102 64 UA library record; WoS full record; WoS citing articles pdf doi
Devolder, T.; Bultynck, O.; Bouquin, P.; Nguyen, V.D.; Rao, S.; Wan, D.; Sorée, B.; Radu, I.P.; Kar, G.S.; Couet, S. Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions 2020 Physical Review B 102 UA library record; WoS full record; WoS citing articles url doi
Osca, J.; Sorée, B. Skyrmion spin transfer torque due to current confined in a nanowire 2020 Physical Review B 102 UA library record; WoS full record; WoS citing articles doi
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. A method to calculate tunneling leakage currents in silicon inversion layers 2006 Journal of applied physics 100 1 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors 2012 Applied physics letters 100 25 UA library record; WoS full record; WoS citing articles doi
Sorée, B.; Magnus, W.; Vandenberghe, W. Low-field mobility in ultrathin silicon nanowire junctionless transistors 2011 Applied physics letters 99 20 UA library record; WoS full record; WoS citing articles url doi
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. Impact of field-induced quantum confinement in tunneling field-effect devices 2011 Applied physics letters 98 76 UA library record; WoS full record; WoS citing articles doi
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections 2010 Applied Physics Letters 96 26 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor 2004 Journal of applied physics 96 14 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor 2003 Journal of applied physics 93 16 UA library record; WoS full record; WoS citing articles doi
Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K. Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility 2005 Microelectronic engineering 80 1 UA library record; WoS full record; WoS citing articles pdf doi
Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts 2005 Microelectronic engineering 80 31 UA library record; WoS full record; WoS citing articles pdf doi
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. Tunneling-lifetime model for metal-oxide-semiconductor structures 2009 Physical review : B : solid state 80 2 UA library record; WoS full record; WoS citing articles url doi
Cantoro, M.; Klekachev, A.V.; Nourbakhsh, A.; Sorée, B.; Heyns, M.M.; de Gendt, S. Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy 2011 European physical journal : B : condensed matter and complex systems 79 10 UA library record; WoS full record; WoS citing articles doi
Carrillo-Nunez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. Phonon-assisted Zener tunneling in a p-n diode silicon nanowire 2013 Solid state electronics 79 2 UA library record; WoS full record; WoS citing articles pdf doi
Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference 2008 Physical review : B : condensed matter and materials physics 77 8 UA library record; WoS full record; WoS citing articles doi
Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations 2012 Solid state electronics 71 2 UA library record; WoS full record; WoS citing articles pdf doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Modeling the impact of junction angles in tunnel field-effect transistors 2012 Solid state electronics 69 9 UA library record; WoS full record; WoS citing articles pdf doi
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Signature of ballistic band-tail tunneling current in tunnel FET 2020 Ieee Transactions On Electron Devices 67 UA library record; WoS full record; WoS citing articles pdf doi
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current 2011 Solid state electronics 65-66 2 UA library record; WoS full record; WoS citing articles pdf doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Direct and indirect band-to-band tunneling in germanium-based TFETs 2012 IEEE transactions on electron devices 59 212 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets 2012 IEEE transactions on electron devices 59 72 UA library record; WoS full record; WoS citing articles doi
Lauwens, J.; Kerkhofs, L.; Sala, A.; Sorée, B. Superconductor-semiconductor hybrid capacitance with a nonlinear charge-voltage profile 2024 Journal of physics: D: applied physics 57 UA library record; WoS full record pdf doi
Vanderveken, F.; Ahmad, H.; Heyns, M.; Sorée, B.; Adelmann, C.; Ciubotaru, F. Excitation and propagation of spin waves in non-uniformly magnetized waveguides 2020 Journal Of Physics D-Applied Physics 53 1 UA library record; WoS full record; WoS citing articles pdf url doi
Balaban, S.N.; Pokatilov, E.P.; Fomin, V.M.; Gladilin, V.N.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; van Rossum, M.; Sorée, B. Quantum transport in a cylindrical sub-0.1 μm silicon-based MOSFET 2002 Solid-State Electronics 46 16 UA library record; WoS full record; WoS citing articles doi
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