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Author |
Title |
Year  |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor |
2017 |
Journal of physics : condensed matter |
29 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Lu, A.K.A.; Houssa, M.; Radu, I.P.; Pourtois, G. |
Toward an understanding of the electric field-induced electrostatic doping in van der Waals heterostructures : a first-principles study |
2017 |
ACS applied materials and interfaces |
9 |
10 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. |
On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study |
2017 |
Journal of applied physics |
121 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Sankaran, K.; Swerts, J.; Couet, S.; Stokbro, K.; Pourtois, G. |
Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta vertical bar CoFe vertical bar MgO magnetic tunnel junctions : a first-principles study |
2016 |
Physical review B |
94 |
4 |
UA library record; WoS full record; WoS citing articles |
|
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van den Broek, B.; Houssa, M.; Lu, A.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. |
Silicene nanoribbons on transition metal dichalcogenide substrates : effects on electronic structure and ballistic transport |
2016 |
Nano Research |
9 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Clima, S.; Chen, Y.Y.; Chen, C.Y.; Goux, L.; Govoreanu, B.; Degraeve, R.; Fantini, A.; Jurczak, M.; Pourtois, G. |
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device |
2016 |
Journal of applied physics |
119 |
17 |
UA library record; WoS full record; WoS citing articles |
|
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Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; |
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films |
2016 |
Applied physics letters |
108 |
9 |
UA library record; WoS full record; WoS citing articles |
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Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. |
Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study |
2016 |
Applied physics letters |
108 |
4 |
UA library record; WoS full record; WoS citing articles |
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van den Broek, B.; Houssa, M.; Iordanidou, K.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Functional silicene and stanene nanoribbons compared to graphene: electronic structure and transport |
2016 |
2D materials |
3 |
19 |
UA library record; WoS full record; WoS citing articles |
|
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de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. |
Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor : structure, tail states and strain effects |
2015 |
Journal of physics: D: applied physics |
48 |
23 |
UA library record; WoS full record; WoS citing articles |
|
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Schoeters, B.; Leenaerts, O.; Pourtois, G.; Partoens, B. |
Ab-initio study of the segregation and electronic properties of neutral and charged B and P dopants in Si and Si/SiO2 nanowires |
2015 |
Journal of applied physics |
118 |
3 |
UA library record; WoS full record; WoS citing articles |
|
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Clima, S.; Chen, Y.Y.; Fantini, A.; Goux, L.; Degraeve, R.; Govoreanu, B.; Pourtois, G.; Jurczak, M. |
Intrinsic tailing of resistive states distributions in amorphous <tex>HfOx </tex> and TaOx based resistive random access memories |
2015 |
IEEE electron device letters |
36 |
33 |
UA library record; WoS full record; WoS citing articles |
|
|
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Nishio, K.; Lu, A.K.A.; Pourtois, G. |
Low-strain Si/O superlattices with tunable electronic properties : ab initio calculations |
2015 |
Physical review : B : condensed matter and materials physics |
91 |
6 |
UA library record; WoS full record; WoS citing articles |
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Quan Manh, P.; Pourtois, G.; Swerts, J.; Pierloot, K.; Delabie, A. |
Atomic layer deposition of Ruthenium on Ruthenium surfaces : a theoretical study |
2015 |
The journal of physical chemistry: C : nanomaterials and interfaces |
119 |
10 |
UA library record; WoS full record; WoS citing articles |
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|
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Sankaran, K.; Clima, S.; Mees, M.; Pourtois, G. |
Exploring alternative metals to Cu and W for interconnects applications using automated first-principles simulations |
2015 |
ECS journal of solid state science and technology |
4 |
19 |
UA library record; WoS full record; WoS citing articles |
|
|
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van den Broek, B.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Current-voltage characteristics of armchair Sn nanoribbons |
2014 |
Physica status solidi: rapid research letters |
8 |
9 |
UA library record; WoS full record; WoS citing articles |
|
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van den Broek, B.; Houssa, M.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Two-dimensional hexagonal tin : ab initio geometry, stability, electronic structure and functionalization |
2014 |
2D materials |
1 |
58 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Scalise, E.; Houssa, M.; Cinquanta, E.; Grazianetti, C.; van den Broek, B.; Pourtois, G.; Stesmans, A.; Fanciulli, M.; Molle, A. |
Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X = S,Se,Te) chalchogenide templates |
2014 |
2D materials |
1 |
49 |
UA library record; WoS full record; WoS citing articles |
|
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Clima, S.; Sankaran, K.; Chen, Y.Y.; Fantini, A.; Celano, U.; Belmonte, A.; Zhang, L.; Goux, L.; Govoreanu, B.; Degraeve, R.; Wouters, D.J.; Jurczak, M.; Vandervorst, W.; Gendt, S.D.; Pourtois, G.; |
RRAMs based on anionic and cationic switching : a short overview |
2014 |
Physica status solidi: rapid research letters |
8 |
28 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Clima, S.; Wouters, D.J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G. |
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight |
2014 |
Applied physics letters |
104 |
79 |
UA library record; WoS full record; WoS citing articles |
|
|
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Mees, M.J.; Pourtois, G.; Rosciano, F.; Put, B.; Vereecken, P.M.; Stesmans, A. |
First-principles material modeling of solid-state electrolytes with the spinel structure |
2014 |
Physical chemistry, chemical physics |
|
8 |
UA library record; WoS full record; WoS citing articles |
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Xu, X.; Vereecke, G.; Chen, C.; Pourtois, G.; Armini, S.; Verellen, N.; Tsai, W.K.; Kim, D.W.; Lee, E.; Lin, C.Y.; Van Dorpe, P.; Struyf, H.; Holsteyns, F.; Moshchalkov, V.; Indekeu, J.; De Gendt, S.; |
Capturing wetting states in nanopatterned silicon |
2014 |
ACS nano |
8 |
39 |
UA library record; WoS full record; WoS citing articles |
|
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Houssa, M.; van den Broek, B.; Scalise, E.; Ealet, B.; Pourtois, G.; Chiappe, D.; Cinquanta, E.; Grazianetti, C.; Fanciulli, M.; Molle, A.; Afanas’ev, V.V.; Stesmans, A.; |
Theoretical aspects of graphene-like group IV semiconductors |
2014 |
Applied surface science |
291 |
20 |
UA library record; WoS full record; WoS citing articles |
|
|
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van den Broek, B.; Houssa, M.; Scalise, E.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
First-principles electronic functionalization of silicene and germanene by adatom chemisorption |
2014 |
Applied surface science |
291 |
32 |
UA library record; WoS full record; WoS citing articles |
|
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Scalise, E.; Cinquanta, E.; Houssa, M.; van den Broek, B.; Chiappe, D.; Grazianetti, C.; Pourtois, G.; Ealet, B.; Molle, A.; Fanciulli, M.; Afanas’ev, V.V.; Stesmans, A.; |
Vibrational properties of epitaxial silicene layers on (111) Ag |
2014 |
Applied surface science |
291 |
36 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Clima, S.; Govoreanu, B.; Jurczak, M.; Pourtois, G. |
HfOx as RRAM material : first principles insights on the working principles |
2014 |
Microelectronic engineering |
120 |
22 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
First-principles study of strained 2D MoS2 |
2014 |
Physica. E: Low-dimensional systems and nanostructures |
56 |
72 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sankaran, K.; Clima, S.; Mees, M.; Adelmann, C.; Tokei, Z.; Pourtois, G. |
Exploring alternative metals to Cu and W for interconnects : an ab initio Insight |
2014 |
2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) |
|
|
UA library record; WoS full record; |
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Adelmann, C.; Wen, L.G.; Peter, A.P.; Pourtois, G.; et al. |
Alternative metals for advanced interconnects |
2014 |
2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) |
|
|
UA library record; WoS full record; |
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Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; |
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates |
2013 |
ECS solid state letters |
2 |
12 |
UA library record; WoS full record; WoS citing articles |
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