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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links  |
Links |
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Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W. |
Evolution of phosphorus-vacancy clusters in epitaxial germanium |
2019 |
Journal of applied physics |
125 |
5 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; McMitchell, S.R.C.; Florent, K.; Nyns, L.; Popovici, M.; Ronchi, N.; Di Piazza, L.; Van Houdt, J.; Pourtois, G. |
First-principles perspective on poling mechanisms and ferroelectric/antiferroelectric behavior of Hf1-xZrxO2 for FEFET applications |
2018 |
2018 Ieee International Electron Devices Meeting (iedm) |
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UA library record; WoS full record; WoS citing articles |
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Sankaran, K.; Swerts, J.; Carpenter, R.; Couet, S.; Garello, K.; Evans, R.F.L.; Rao, S.; Kim, W.; Kundu, S.; Crotti, D.; Kar, G.S.; Pourtois, G. |
Evidence of magnetostrictive effects on STT-MRAM performance by atomistic and spin modeling |
2018 |
2018 Ieee International Electron Devices Meeting (iedm) |
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UA library record; WoS full record; WoS citing articles |
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Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. |
Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers |
2019 |
ECS journal of solid state science and technology |
8 |
|
UA library record; WoS full record |
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Adelmann, C.; Sankaran, K.; Dutta, S.; Gupta, A.; Kundu, S.; Jamieson, G.; Moors, K.; Pinna, N.; Ciofi, I.; Van Elshocht, S.; Bommels, J.; Boccardi, G.; Wilson, C.J.; Pourtois, G.; Tokei, Z. |
Alternative Metals: from ab initio Screening to Calibrated Narrow Line Models |
2018 |
Proceedings of the IEEE ... International Interconnect Technology Conference
T2 – IEEE International Interconnect Technology Conference (IITC), JUN 04-07, 2018, Santa Clara, CA |
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UA library record; WoS full record; WoS citing articles |
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Sankaran, K.; Moors, K.; Dutta, S.; Adelmann, C.; Tokei, Z.; Pourtois, G. |
Metallic ceramics for low resitivity interconnects : an ab initio insight |
2018 |
Proceedings of the IEEE ... International Interconnect Technology Conference
T2 – IEEE International Interconnect Technology Conference (IITC), JUN 04-07, 2018, Santa Clara, CA |
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UA library record; WoS full record; WoS citing articles |
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Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Porret, C.; Loo, R.; Vandervorst, W. |
Heavily phosphorus doped germanium : strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation |
2019 |
Journal of applied physics |
125 |
1 |
UA library record; WoS full record; WoS citing articles |
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Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G. |
Material relaxation in chalcogenide OTS SELECTOR materials |
2019 |
Microelectronic engineering |
215 |
1 |
UA library record; WoS full record; WoS citing articles |
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Yu, H.; Schaekers, M.; Chew, S.A.; Eyeraert, J.-L.; Dabral, A.; Pourtois, G.; Horiguchi, N.; Mocuta, D.; Collaert, N.; De Meyer, K. |
Titanium (germano-)silicides featuring 10-9 Ω.cm2 contact resistivity and improved compatibility to advanced CMOS technology |
2018 |
2018 18th International Workshop On Junction Technology (iwjt) |
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UA library record; WoS full record |
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Clima, S.; Garbin, D.; Opsomer, K.; Avasarala, N.S.; Devulder, W.; Shlyakhov, I.; Keukelier, J.; Donadio, G.L.; Witters, T.; Kundu, S.; Govoreanu, B.; Goux, L.; Detavernier, C.; Afanas'ev, V.; Kar, G.S.; Pourtois, G. |
Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles |
2020 |
Physica Status Solidi-Rapid Research Letters |
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3 |
UA library record; WoS full record; WoS citing articles |
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Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. |
Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice |
2020 |
Journal Of Physical Chemistry C |
124 |
2 |
UA library record; WoS full record; WoS citing articles |
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Vohra, A.; Makkonen, I.; Pourtois, G.; Slotte, J.; Porret, C.; Rosseel, E.; Khanam, A.; Tirrito, M.; Douhard, B.; Loo, R.; Vandervorst, W. |
Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx |
2020 |
Ecs Journal Of Solid State Science And Technology |
9 |
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UA library record; WoS full record; WoS citing articles |
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Khanam, A.; Vohra, A.; Slotte, J.; Makkonen, I.; Loo, R.; Pourtois, G.; Vandervorst, W. |
A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-XSnx |
2020 |
Journal Of Applied Physics |
127 |
|
UA library record; WoS full record; WoS citing articles |
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Guo, J.; Clima, S.; Pourtois, G.; Van Houdt, J. |
Identifying alternative ferroelectric materials beyond Hf(Zr)O-₂ |
2020 |
Applied Physics Letters |
117 |
|
UA library record; WoS full record; WoS citing articles |
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Clima, S.; O'Sullivan, B.J.; Ronchi, N.; Bardon, M.G.; Banerjee, K.; Van den Bosch, G.; Pourtois, G.; van Houdt, J. |
Ferroelectric switching in FEFET : physics of the atomic mechanism and switching dynamics in HfZrOx, HfO2 with oxygen vacancies and Si dopants |
2020 |
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UA library record; WoS full record; WoS citing articles |
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Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. |
Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference |
2008 |
Physical review : B : condensed matter and materials physics |
77 |
8 |
UA library record; WoS full record; WoS citing articles |
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Neyts, E.; Maeyens, A.; Pourtois, G.; Bogaerts, A. |
A density-functional theory simulation of the formation of Ni-doped fullerenes by ion implantation |
2011 |
Carbon |
49 |
13 |
UA library record; WoS full record; WoS citing articles |
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Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
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Neyts, E.C.; Khalilov, U.; Pourtois, G.; van Duin, A.C.T. |
Hyperthermal oxygen interacting with silicon surfaces : adsorption, implantation, and damage creation |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
28 |
UA library record; WoS full record; WoS citing articles |
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Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Structural and vibrational properties of amorphous GeO2 from first-principles |
2011 |
Applied physics letters |
98 |
226 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Sioncke, S.; Rip, J.; van Elshocht, S.; Caymax, M.; Pourtois, G.; Pierloot, K. |
Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
9 |
UA library record; WoS full record; WoS citing articles |
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Nourbakhsh, A.; Cantoro, M.; Klekachev, A.V.; Pourtois, G.; Vosch, T.; Hofkens, J.; van der Veen, M.H.; Heyns, M.M.; de Gendt, S.; Sels, B.F. |
Single layer vs bilayer graphene : a comparative study of the effects of oxygen plasma treatment on their electronic and optical properties |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
46 |
UA library record; WoS full record; WoS citing articles |
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Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Electronic properties of two-dimensional hexagonal germanium |
2010 |
Applied physics letters |
96 |
86 |
UA library record; WoS full record; WoS citing articles |
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Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current |
2011 |
Solid state electronics |
65-66 |
2 |
UA library record; WoS full record; WoS citing articles |
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Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. |
Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling |
2011 |
Applied physics letters |
99 |
1 |
UA library record; WoS full record; WoS citing articles |
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Khalilov, U.; Neyts, E.C.; Pourtois, G.; van Duin, A.C.T. |
Can we control the thickness of ultrathin silica layers by hyperthermal silicon oxidation at room temperature? |
2011 |
The journal of physical chemistry: C : nanomaterials and interfaces |
115 |
36 |
UA library record; WoS full record; WoS citing articles |
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Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. |
First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts |
2005 |
Microelectronic engineering |
80 |
31 |
UA library record; WoS full record; WoS citing articles |
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Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K. |
Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates |
2012 |
Journal of vacuum science and technology: A: vacuum surfaces and films |
30 |
41 |
UA library record; WoS full record; WoS citing articles |
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Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.; Stesmans, A. |
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 |
2012 |
Nano Research |
5 |
407 |
UA library record; WoS full record; WoS citing articles |
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Mees, M.J.; Pourtois, G.; Neyts, E.C.; Thijsse, B.J.; Stesmans, A. |
Uniform-acceptance force-bias Monte Carlo method with time scale to study solid-state diffusion |
2012 |
Physical review : B : condensed matter and materials physics |
85 |
31 |
UA library record; WoS full record; WoS citing articles |
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