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“Binding energy of the barbell exciton”. Peeters FM, Golub JE, Physical review : B : condensed matter and materials physics 43, 5159 (1991)
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.736
Times cited: 27
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“Binding energy and structure of localized biexcitons in quantum wells”. Riva C, Varga K, Schweigert VA, Peeters FM, Physica status solidi: B: basic research 210, 689 (1998). http://doi.org/10.1002/(SICI)1521-3951(199812)210:2<689::AID-PSSB689>3.0.CO;2-M
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.674
Times cited: 12
DOI: 10.1002/(SICI)1521-3951(199812)210:2<689::AID-PSSB689>3.0.CO;2-M
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“Binding energies of positive and negative trions: From quantum wells to quantum dots”. Bracker AS, Stinaff EA, Gammon D, Ware ME, Tischler JG, Park D, Gershoni D, Filinov AV, Bonitz M, Peeters F, Riva C, Physical review : B : condensed matter and materials physics 72, 035332 (2005). http://doi.org/10.1103/PhysRevB.72.035332
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 77
DOI: 10.1103/PhysRevB.72.035332
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“Binary dusty plasma Coulomb balls”. Apolinario SWS, Peeters FM, Physical review : E : statistical physics, plasmas, fluids, and related interdisciplinary topics 83, 041136 (2011). http://doi.org/10.1103/PhysRevE.83.041136
Abstract: We investigated the mixing and segregation of a system consisting of two different species of particles, having different charges, interacting through a pure Coulomb potential, and confined in a three-dimensional parabolic trap. The structure of the cluster and its normal mode spectrum are analyzed as a function of the relative charge and the relative number of different types of particles. We found that (a) the system can be in a mixed or segregated state depending on the relative charge ratio parameter and (b) the segregation process is mediated by a first or second order structural phase transition which strongly influences the magic cluster properties of the system.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.366
Times cited: 10
DOI: 10.1103/PhysRevE.83.041136
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“Bilayer SnS2 : tunable stacking sequence by charging and loading pressure”. Bacaksiz C, Cahangirov S, Rubio A, Senger RT, Peeters FM, Sahin H, Physical review B 93, 125403 (2016). http://doi.org/10.1103/PhysRevB.93.125403
Abstract: Employing density functional theory-based methods, we investigate monolayer and bilayer structures of hexagonal SnS2, which is a recently synthesized monolayer metal dichalcogenide. Comparison of the 1H and 1T phases of monolayer SnS2 confirms the ground state to be the 1T phase. In its bilayer structure we examine different stacking configurations of the two layers. It is found that the interlayer coupling in bilayer SnS2 is weaker than that of typical transition-metal dichalcogenides so that alternative stacking orders have similar structural parameters and they are separated with low energy barriers. A possible signature of the stacking order in the SnS2 bilayer has been sought in the calculated absorbance and reflectivity spectra. We also study the effects of the external electric field, charging, and loading pressure on the characteristic properties of bilayer SnS2. It is found that (i) the electric field increases the coupling between the layers at its preferred stacking order, so the barrier height increases, (ii) the bang gap value can be tuned by the external E field and under sufficient E field, the bilayer SnS2 can become a semimetal, (iii) the most favorable stacking order can be switched by charging, and (iv) a loading pressure exceeding 3 GPa changes the stacking order. The E-field tunable band gap and easily tunable stacking sequence of SnS2 layers make this 2D crystal structure a good candidate for field effect transistor and nanoscale lubricant applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 38
DOI: 10.1103/PhysRevB.93.125403
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“Bilayer graphene with single and multiple electrostatic barriers: band structure and transmission”. Barbier M, Vasilopoulos P, Peeters FM, Pereira JM, Physical review : B : solid state 79, 155402 (2009). http://doi.org/10.1103/PhysRevB.79.155402
Abstract: We evaluate the electronic transmission and conductance in bilayer graphene through a finite number of potential barriers. Further, we evaluate the dispersion relation in a bilayer graphene superlattice with a periodic potential applied to both layers. As a model we use the tight-binding Hamiltonian in the continuum approximation. For zero bias the dispersion relation shows a finite gap for carriers with zero momentum in the direction parallel to the barriers. This is in contrast to single-layer graphene where no such gap was found. A gap also appears for a finite bias. Numerical results for the energy spectrum, conductance, and the density of states are presented and contrasted with those pertaining to single-layer graphene.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 74
DOI: 10.1103/PhysRevB.79.155402
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“Bilayer graphene Hall bar with a pn-junction”. Milovanovic SP, Masir MR, Peeters FM, Journal of applied physics 114, 113706 (2013). http://doi.org/10.1063/1.4821264
Abstract: We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from zero magnetic field.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 3
DOI: 10.1063/1.4821264
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“Bilayer crystals of charged magnetic dipoles : structure and phonon spectrum”. Ramos IRO, Ferreira WP, Munarin FF, Farias GA, Peeters FM, Physical review : E : statistical, nonlinear, and soft matter physics 85, 051404 (2012). http://doi.org/10.1103/PhysRevE.85.051404
Abstract: We study the structure and phonon spectrum of a two-dimensional bilayer system of classical charged dipoles oriented perpendicular to the plane of the layers for equal density in each layer. This system can be tuned through six different crystalline phases by changing the interlayer separation or the charge and/or dipole moment of the particle. The presence of the charge on the dipole particles is responsible for the nucleation of five staggered phases and a disordered phase which are not found in the magnetic dipole bilayer system. These extra phases are a consequence of the competition between the repulsive Coulomb and the attractive dipole interlayer interaction. We present the phase diagram and determine the order of the phase transitions. The phonon spectrum of the system was calculated within the harmonic approximation, and a nonmonotonic behavior of the phonon spectrum is found as a function of the effective strength of the interparticle interaction. The stability of the different phases is determined.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.366
Times cited: 8
DOI: 10.1103/PhysRevE.85.051404
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“Biexciton spin and angular momentum transitions in vertically coupled quantum dots”. Anisimovas E, Peeters FM, Physical review : B : condensed matter and materials physics 71, 115319 (2005). http://doi.org/10.1103/PhysRevB.71.115319
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 6
DOI: 10.1103/PhysRevB.71.115319
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“Biexciton binding energy in fractional dimensional semiconductors”. Rønnow TF, Pedersen TG, Partoens B, Physical review : B : condensed matter and materials physics 85, 045412 (2012). http://doi.org/10.1103/PhysRevB.85.045412
Abstract: Biexcitons in fractional dimensional spaces are studied using variational quantum Monte Carlo. We investigate the biexciton binding energy as a function of the electron-hole mass fraction sigma as well as study the dimensional dependence of biexcitons for sigma = 0 and sigma = 1. As our first application of this model we treat the H(2) molecule in two and three dimensions. Next we investigate biexcitons in carbon nanotubes within the fractional dimensional model. To this end we find a relation between the nanotube radius and the effective dimension. The results of both applications are compared with results obtained using different models and we find a reasonable agreement. Within the fractional dimensional model we find that the biexciton binding energy in carbon nanotubes accurately scales as E(B)(r,epsilon) = 1280 meV angstrom/(r epsilon), as a function of radius r and the dielectric screening epsilon.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 21
DOI: 10.1103/PhysRevB.85.045412
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“Biaxial strain tuning of exciton energy and polarization in monolayer WS2”. Kourmoulakis G, Michail A, Paradisanos I, Marie X, Glazov MM, Jorissen B, Covaci L, Stratakis E, Papagelis K, Parthenios J, Kioseoglou G, Applied Physics Letters 123 (2023). http://doi.org/10.1063/5.0167724
Abstract: We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of −130 meV per % of strain is observed in the neutral exciton emission at room temperature. Under near-resonant excitation, we measure a monotonic decrease in the circular polarization degree under the applied strain. We experimentally separate the effect of the strain-induced energy detuning and evaluate the pure effect coming from the biaxial strain. The analysis shows that the suppression of the circular polarization degree under the biaxial strain is related to an interplay of energy and polarization relaxation channels as well as to variations in the exciton oscillator strength affecting the long-range exchange interaction.
Keywords: A1 Journal Article; Condensed Matter Theory (CMT) ;
Impact Factor: 4
DOI: 10.1063/5.0167724
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“Beating of oscillations in transport coefficients of a one-dimensionally periodically modulatedtwo-dimensional electron gas in the presence of spin-orbit interaction”. Wang XF, Peeters FM, Physical review : B : condensed matter and materials physics 71, 125301 (2005). http://doi.org/10.1103/PhysRevB.71.125301
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 35
DOI: 10.1103/PhysRevB.71.125301
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“BCS-BEC crossover in quantum confined superconductors”. Guidini A, Flammia L, Milošević, MV, Perali A, Journal of superconductivity and novel magnetism 29, 711 (2016). http://doi.org/10.1007/s10948-015-3308-y
Abstract: Ultranarrow superconductors are in the strong quantum confinement regime with formation of multiple coherent condensates associated with the many subbands of the electronic structure. Here, we analyze the multiband BCS-BEC crossover induced by the chemical potential tuned close to a subband bottom, in correspondence of a superconducting shape resonance. The evolution of the condensate fraction and of the pair correlation length in the ground state as functions of the chemical potential demonstrates the tunability of the BCS-BEC crossover for the condensate component of the selected subband. The extension of the crossover regime increases when the pairing strength and/or the characteristic energy of the interaction get larger. Our results indicate the coexistence of large and small Cooper pairs in the crossover regime, leading to the optimal parameter configuration for high transition temperature superconductivity.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 1.18
Times cited: 12
DOI: 10.1007/s10948-015-3308-y
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“Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility”. Lujan GS, Magnus W, Sorée B, Ragnarsson LA, Trojman L, Kubicek S, De Gendt S, Heyns A, De Meyer K, Microelectronic engineering 80, 82 (2005). http://doi.org/10.1016/j.mee.2005.04.047
Abstract: The electron wave functions in the inversion layer are analyzed in the case where the dielectric barriers are not infinite. This forces the electron concentration closer to the interface silicon/oxide and reduces the subband energy. This treatment of the inversion layer is extended to the calculation of the electron mobility degradation due to remote Coulomb scattering on a high-k dielectric stacked transistor. The subband energy reduction leads to a decrease of the scattering charge needed to explain the experimental results. This model can also fit better the experimental data when compared with the case where no barrier permeation is considered.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 1.806
Times cited: 1
DOI: 10.1016/j.mee.2005.04.047
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“Bandgap engineering of two-dimensional semiconductor materials”. Chaves A, Azadani JG, Alsalman H, da Costa DR, Frisenda R, Chaves AJ, Song SH, Kim YD, He D, Zhou J, Castellanos-Gomez A, Peeters FM, Liu Z, Hinkle CL, Oh S-H, Ye PD, Koester SJ, Lee YH, Avouris P, Wang X, Low T, npj 2D Materials and Applications 4, 29 (2020). http://doi.org/10.1038/S41699-020-00162-4
Abstract: Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Times cited: 329
DOI: 10.1038/S41699-020-00162-4
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“Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes”. Bizindavyi J, Verhulst AS, Smets Q, Verreck D, Sorée B, Groeseneken G, IEEE journal of the Electron Devices Society 6, 633 (2018). http://doi.org/10.1109/JEDS.2018.2834825
Abstract: Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs). We resolve this discrepancy for highly-doped, direct-bandgap Esaki diodes by successfully calibrating a semi-classical model for high-doping-induced ballistic band-tails tunneling currents at multiple temperatures with two In0.53Ga0.47As Esaki diodes using their SIMS doping profiles, C-V characteristics and their forward-bias current density in the negative differential resistance (NDR) regime. The current swing in the NDR regime is shown not to be linked to the band-tails Urbach energy. We further demonstrate theoretically that the calibrated band-tails contribution is also the dominant band-tails contribution to the subthreshold swing of the corresponding TFETs. Lastly, we verify that the presented procedure is applicable to all direct-bandgap semiconductors by successfully applying it to InAs Esaki diodes in literature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.141
Times cited: 5
DOI: 10.1109/JEDS.2018.2834825
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“Band-gap tuning of graphene by Be doping and Be, B co-doping : a DFT study”. Ullah S, Hussain A, Syed WA, Saqlain MA, Ahmad I, Leenaerts O, Karim A, RSC advances 5, 55762 (2015). http://doi.org/10.1039/c5ra08061d
Abstract: First-principles density functional theory (DFT) calculations were carried out to investigate the structural and electronic properties of beryllium (Be) doped and Be and boron (B) co-doped graphene systems. We observed that not only the concentration of impurity atoms is important to tune the band-gap to some desired level, but also the specific substitution sites play a key role. In our system, which consists of 32 atoms, a maximum of 4Be and, in the co-doped state, 2Be and 3B atom substitutions are investigated. Both dopants are electron deficient relative to C atoms and cause the Fermi level to shift downward (p-type doping). A maximum band gap of 1.44 eV can be achieved on incorporation of 4Be atoms. The introduction of Be is more sensitive in terms of geometry and stability than B. However, in opening the energy gap, Be is more effective than B and N (nitrogen). Our results offer the possibility to modify the band-gap of graphene sufficiently for utilization in diverse electronic device applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.108
Times cited: 33
DOI: 10.1039/c5ra08061d
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“Band-gap formation and morphing in alpha-T-3 superlattices”. Cunha SM, de Costa DR, Pereira Jr JM, Costa Filho RN, Van Duppen B, Peeters FM, Physical Review B 104, 115409 (2021). http://doi.org/10.1103/PHYSREVB.104.115409
Abstract: Electrons in alpha-T-3 lattices behave as condensed-matter analogies of integer-spin Dirac fermions. The three atoms making up the unit cell bestow the energy spectrum with an additional energy band that is completely flat, providing unique electronic properties. The interatomic hopping term, alpha, is known to strongly affect the electronic spectrum of the two-dimensional (2D) lattice, allowing it to continuously morph from graphenelike responses to the behavior of fermions in a dice lattice. For pristine lattice structures the energy bands are gapless, but small deviations in the atomic equivalence of the three sublattices will introduce gaps in the spectrum. It is unknown how these affect transport and electronic properties such as the energy spectrum of superlattice minibands. Here we investigate the dependency of these properties on the parameter a accounting for different symmetry-breaking terms, and we show how it affects band-gap formation. Furthermore, we find that superlattices can force band gaps to close and shift in energy. Our results demonstrate that alpha-T-3 superlattices provide a versatile material for 2D band-gap engineering purposes.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 6
DOI: 10.1103/PHYSREVB.104.115409
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“Band structure, density of states, and transmission in graphene bilayer superlattices”. Barbier M, Vasilopoulos P, Peeters FM, Pereira JM, AIP conference proceedings 1199, 547 (2009). http://doi.org/10.1063/1.3295550
Abstract: The energy spectrum and density of states of graphene bilayer superlattices (SLs) are evaluated. We take into account doping and/or gating of the layers as well as tunnel coupling between them. In addition, we evaluate the transmission through such SLs and through single or double barriers. The transmission exhibits a strong dependence on the direction of the incident wave vector.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1063/1.3295550
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“Band structure of a two-dimensional electron gas in the presence of two-dimensional electric and magnetic modulations and a perpendicular magnetic field”. Wang XF, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 70, 155312 (2004). http://doi.org/10.1103/PhysRevB.70.155312
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 6
DOI: 10.1103/PhysRevB.70.155312
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“Band gap and magnetism engineering in Dirac half-metallic Na2C nanosheet via layer thickness, strain and point defects”. Bafekry A, Mortazavic B, Shayesteh SF, Journal of magnetism and magnetic materials 491, 165565 (2019). http://doi.org/10.1016/J.JMMM.2019.165565
Abstract: Na2C is a novel two-dimensional material with Dirac Half-metal (DHM) characteristic, exhibiting a combination of single-spin massless Dirac fermions and half-semimetal. In this paper based on the first-principles calculations, we studied the mechanical, electronic, magnetic and optical properties of Na2C nanosheet. The elastic modulus of Na2C was measured to 18.5 N/m and isotropic, whereas it shows anisotropic tensile strengths of 2.85 and 2.04 N/m, for the loading along the zigzag and armchair directions, respectively. We found that Na2C, is a DHM with band gap of 0.7 eV in the up-spin channel and has 2 mu(B) magnetic moment per unit cell. In addition, we investigated the effects of number of atomic layers (thickness), electric field and strain on the possibility of further tuning of the electronic and magnetic properties of Na2C. Our calculations show that by increasing the number of layers from monolayer to bulk, a transition from DHM to ferromagnetic metal occurs with a high magnetic moments in the range of 16-30 mu(B). With applying an electric field on the Na2C bilayer (within the ferromagnetic and anti-ferromagnetic orders), energy band gap is slightly increased. In addition our results indicate that the electronic structure can be significantly modified by applying the mechanical straining. In this regard, under the biaxial strain (from 0% to – 8%) or large uniaxial strains (> – 6%), we observed the DHM to ferromagnetic-metal transition. Moreover, vacancy defects and atom substitutions can also effect the electronic and magnetic properties of Na2C nanosheet. Defective Na2C with single and double vacancies, was found to show the metallic response. With various atom substitutions this nanosheet exhibits; ferromagnetic-metal (Si and Be) with 5.2 and 3 mu(B); dilute-magnetic semiconductor (B and N) with 3 and 7 mu(B) magnetic moments, respectively. In the case of B or N atoms replacing the native C atom, the down-spin channel yields about 1 eV band gap. Interestingly, replacing the Na atoms in the native Na2C lattice with the Li can result in the formation of magnetic topological insulator phase with nontrivial band gap in the down-spin channel (25 meV and 0.15 eV) and up-spin channel (0.75 eV), in addition exhibit 8 mu(B) magnetic moment in the ground state.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.63
Times cited: 13
DOI: 10.1016/J.JMMM.2019.165565
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“Band flattening in buckled monolayer graphene”. Milovanović, SP, Andelkovic M, Covaci L, Peeters FM, Physical Review B 102, 245427 (2020). http://doi.org/10.1103/PHYSREVB.102.245427
Abstract: The strain fields of periodically buckled graphene induce a periodic pseudomagnetic field (PMF) that modifies the electronic band structure. From the geometry, amplitude, and period of the periodic pseudomagnetic field, we determine the necessary conditions to access the regime of correlated phases by examining the band flattening. As compared to twisted bilayer graphene the proposed system has the advantages that (1) only a single layer of graphene is needed, (2) one is not limited to hexagonal superlattices, and (3) narrower flat bandwidth and larger separation between flat bands can be induced. We, therefore, propose that periodically strained graphene single layers can become a platform for the exploration of exotic many-body phases.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT); Condensed Matter Theory (CMT)
Impact Factor: 3.7
Times cited: 11
DOI: 10.1103/PHYSREVB.102.245427
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“Band alignment of lateral two-dimensional heterostructures with a transverse dipole”. Leenaerts O, Vercauteren S, Partoens B, Applied physics letters 110, 181602 (2017). http://doi.org/10.1063/1.4982791
Abstract: It was recently shown that the electronic band alignment in lateral two-dimensional heterostructures is strongly dependent on the system geometry, such as heterostructure width and layer thickness. This is so even in the absence of polar edge terminations because of the appearance of an interface dipole between the two different materials. In this study, this work is expanded to include two-dimensional materials that possess an electronic dipole over their surface, i.e., in the direction transverse to the crystal plane. To this end, a heterostucture consisting of polar hydrofluorinated graphene and non-polar graphane layers is studied with first-principles calculations. As for nonpolar heterostructures, a significant geometry dependence is observed with two different limits for the band offset. For infinitely wide heterostructures, the potential step in the vacuum is equally divided over the two sides of the heterostructure, resulting in a finite potential step in the heterostructure. For infinitely thick heterostructure slabs, on the other hand, the band offset is reduced, similar to the three-dimensional case.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 4
DOI: 10.1063/1.4982791
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“Ballistic thermoelectric properties of monolayer semiconducting transition metal dichalcogenides and oxides”. Ozbal G, Senger RT, Sevik C, Sevincli H, Physical review B 100, 085415 (2019). http://doi.org/10.1103/PHYSREVB.100.085415
Abstract: Combining first-principles calculations with Landauer-Mittiker formalism, ballistic thermoelectric transport properties of semiconducting two-dimensional transition metal dichalcogenides (TMDs) and oxides (TMOs) (namely MX2 with M = Cr, Mo, W, Ti, Zr, Hf; X = O, S, Se, Te) are investigated in their 2H and 1T phases. Having computed structural, as well as ballistic electronic and phononic transport properties for all structures, we report the thermoelectric properties of the semiconducting ones. We find that 2H phases of four of the studied structures have very promising thermoelectric properties, unlike their 1T phases. The maximum room temperature p-type thermoelectric figure of merit (ZT) of 1.57 is obtained for 2H-HfSe2, which can be as high as 3.30 at T = 800 K. Additionally, 2H-ZrSe2, 2H-ZrTe2, and 2H-HfS2 have considerable ZT values (both nand p-type), that are above 1 at room temperature. The 1T phases of Zr and Hf-based oxides possess relatively high power factors, however their high lattice thermal conductance values limit their ZT values to below 1 at room temperature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
DOI: 10.1103/PHYSREVB.100.085415
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“Ballistic spin transport through electronic stub tuners : spin precession, selection, and square-wave transmission”. Wang XF, Vasilopoulos P, Peeters FM, Applied physics letters 80, 1400 (2002). http://doi.org/10.1063/1.1455146
Abstract: Ballistic spin transport is studied through electronic tuners with double stubs attached to them. The spins precess due to the spin-orbit interaction. Injected polarized spins can exit the structure polarized in the opposite direction. A nearly square-wave spin transmission, with values 1 and 0, can be obtained using a periodic system of symmetric stubs and changing their length or width. The gaps in the transmission can be widened using asymmetric stubs. An additional modulation is obtained upon combining stub structures with different values of the spin-orbit strength. D 2002 American Institute of Physics.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 49
DOI: 10.1063/1.1455146
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“Ballistic electron channels including weakly protected topological states in delaminated bilayer graphene”. Lane TLM, Andelkovic M, Wallbank JR, Covaci L, Peeters FM, Fal'ko VI, Physical review B 97, 045301 (2018). http://doi.org/10.1103/PHYSREVB.97.045301
Abstract: <script type='text/javascript'>document.write(unpmarked('We show that delaminations in bilayer graphene (BLG) with electrostatically induced interlayer symmetry can provide one with ballistic channels for electrons with energies inside the electrostatically induced BLG gap. These channels are formed by a combination of valley-polarized evanescent states propagating along the delamination edges (which persist in the presence of a strong magnetic field) and standing waves bouncing between them inside the delaminated region (in a strong magnetic field, these transform into Landau levels in the monolayers). For inverted stackings in BLGs on the left and right of the delamination (AB-2ML-BA or BA-2ML-AB, where 2ML indicates two decoupled monolayers of graphene), the lowest-energy ballistic channels are gapless, have linear dispersion, and appear to be weakly topologically protected. When BLG stackings on both sides of the delamination are the same (AB-2ML-AB or BA-2ML-BA), the lowest-energy ballistic channels are gapped, with a gap epsilon(g) scaling as epsilon(g) alpha W-1 with delamination width and epsilon(g) alpha delta(-1) with the on-layer energy difference in the delaminated part of the structure. Depending on the width, delaminations may also support several \u0022higher-energy\u0022 waveguide modes. Our results are based on both the analytical study of the wave matching of Dirac states and tight-binding model calculations, and we analyze in detail the dependence of the delamination spectrum on the electrostatic conditions in the structure, such as the vertical displacement field.'));
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 11
DOI: 10.1103/PHYSREVB.97.045301
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“Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology”. Pourghaderi MA, Magnus W, Sorée B, Meuris M, de Meyer K, Heyns M, Journal of applied physics 106, 053702 (2009). http://doi.org/10.1063/1.3197635
Abstract: In this study we investigate the effect of device topology on the ballistic current in n-channel metal-oxide-semiconductor field-effect transistors. Comparison of the nanoscale planar and double-gate devices reveals that, down to a certain thickness of the double gate film, the ballistic current flowing in the double gate device is twice as large compared to its planar counterpart. On the other hand, further thinning of the film beyond this threshold is found to change noticeably the confinement and transport characteristics, which are strongly depending on the film material and the surface orientation. For double gate Ge and Si devices there exists a critical film thickness below which the transverse gate field is no longer effectively screened by the inversion layer electron gas and mutual inversion of the two gates is turned on. In the case of GaAs and other similar IIIV compounds, a decrease in the film thickness may drastically change the occupation of the L-valleys and therefore amend the transport properties. The simulation results show that, in both cases, the ballistic current and the transconductance are considerably enhanced.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.068
Times cited: 3
DOI: 10.1063/1.3197635
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“Back hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions”. Devolder T, Bultynck O, Bouquin P, Nguyen VD, Rao S, Wan D, Sorée B, Radu IP, Kar GS, Couet S, Physical Review B 102, 184406 (2020). http://doi.org/10.1103/PHYSREVB.102.184406
Abstract: We analyze the phenomenon of back hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot time-resolved conductance measurements of the pulse-induced back hopping. Studying several material variants reveals that the back hopping is a feature of the nominally fixed system of the tunnel junction. The back hopping is found to proceed by two sequential switching events that lead to a final state P' of conductance close to-but distinct from-that of the conventional parallel state. The P' state does not exist at remanence. It generally relaxes to the conventional antiparallel state if the current is removed. The P' state involves a switching of the sole spin-polarizing part of the fixed layers. The analysis of literature indicates that back hopping occurs only when the spin-polarizing layer is too weakly coupled to the rest of the fixed system, which justifies a posteriori the mitigation strategies of back hopping that were implemented empirically in spin-transfer-torque magnetic random access memories.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.7
DOI: 10.1103/PHYSREVB.102.184406
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“Axion insulator states in a topological insulator proximitized to magnetic insulators : a tight-binding characterization”. Shafiei M, Fazileh F, Peeters FM, Milošević, MV, Physical review materials 6, 074205 (2022). http://doi.org/10.1103/PHYSREVMATERIALS.6.074205
Abstract: The recent discovery of axion states in materials such as antiferromagnetic topological insulators has boosted investigations of the magnetoelectric response in topological insulators and their promise towards realizing dissipationless topological electronics. In this paper, we develop a tight-binding methodology to explore the emergence of axion states in Bi2Se3 in proximity to magnetic insulators on the top and bottom surfaces. The topological protection of the surface states is lifted by a time-reversal-breaking perturbation due to the proximity of a magnetic insulator, and a gap is opened on the surfaces, giving rise to half-quantized Hall conductance and a zero Hall plateau-evidencing an axion insulator state. We developed a real-space tight-binding Hamiltonian for Bi2Se3 using first-principles data. Transport properties of the system were obtained within the Landauer-Buttiker formalism, and we discuss the creation of axion states through Hall conductance and a zero Hall plateau at the surfaces, as a function of proximitized magnetization and corresponding potentials at the surfaces, as well as the thickness of the topological insulator.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.4
DOI: 10.1103/PHYSREVMATERIALS.6.074205
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“Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation”. Chirayath VA, Callewaert V, Fairchild AJ, Chrysler MD, Gladen RW, Mcdonald AD, Imam SK, Shastry K, Koymen AR, Saniz R, Barbiellini B, Rajeshwar K, Partoens B, Weiss AH, Nature communications 8, 16116 (2017). http://doi.org/10.1038/ncomms16116
Abstract: Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (<1.25 eV) to create valence-band holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 12.124
Times cited: 20
DOI: 10.1038/ncomms16116
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