toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
List View
 |   | 
   print
  Author Title (up) Year Publication Volume Times cited Additional Links Links
Baelus, B.J.; Peeters, F.M. Hall potentiometer in the ballistic regime 1999 Applied physics letters 74 13 UA library record; WoS full record; WoS citing articles doi
Frangis, N.; van Landuyt, J.; Lartiprete, R.; Martelli, S.; Borsella, E.; Chiussi, S.; Castro, J.; Leon, B. High resolution electron microscopy and X-ray photoelectron spectroscopy studies of heteroepitaxial SixGe1-x alloys produced through laser induced processing 1998 Applied physics letters 72 16 UA library record; WoS full record; WoS citing articles pdf doi
Amin-Ahmadi, B.; Idrissi, H.; Delmelle, R.; Pardoen, T.; Proost, J.; Schryvers, D. High resolution transmission electron microscopy characterization of fcc -> 9R transformation in nanocrystalline palladium films due to hydriding 2013 Applied physics letters 102 14 UA library record; WoS full record; WoS citing articles pdf doi
Cloetens, P.; Ludwig, W.; Baruchel, J.; van Dyck, D.; van Landuyt, J.; Guigay, J.P.; Schlenker, M. Holotomography: quantitative phase tomography with micrometer resolution using hard synchrotron radiation X-rays 1999 Applied physics letters 75 481 UA library record; WoS full record; WoS citing articles pdf doi
Reijniers, J.; Peeters, F.M. Hybrid ferromagnetic/semiconductor Hall effect device 1998 Applied physics letters 73 35 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Wouters, D.J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight 2014 Applied physics letters 104 79 UA library record; WoS full record; WoS citing articles doi
Guo, J.; Clima, S.; Pourtois, G.; Van Houdt, J. Identifying alternative ferroelectric materials beyond Hf(Zr)O-₂ 2020 Applied Physics Letters 117 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. Impact of field-induced quantum confinement in tunneling field-effect devices 2011 Applied physics letters 98 76 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic 2014 Applied physics letters 105 10 UA library record; WoS full record; WoS citing articles doi
Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D. Improved strain precision with high spatial resolution using nanobeam precession electron diffraction 2013 Applied physics letters 103 53 UA library record; WoS full record; WoS citing articles doi
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy 1992 Applied physics letters 60 20 UA library record; WoS full record; WoS citing articles pdf doi
Dobbelaere, W.; de Boeck, J.; Heremans, P.; Mertens, R.; Borghs, G.; Luyten, W.; van Landuyt, J. InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy 1992 Applied physics letters 600 32 UA library record; WoS full record; WoS citing articles pdf doi
Scalise, E.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. Inelastic electron tunneling spectroscopy of HfO2 gate stacks : a study based on first-principles modeling 2011 Applied physics letters 99 1 UA library record; WoS full record; WoS citing articles doi
Mlinar, V.; Peeters, F.M. Influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots 2006 Applied physics letters 89 16 UA library record; WoS full record; WoS citing articles url doi
Chen, Y.Y.; Pourtois, G.; Adelmann, C.; Goux, L.; Govoreanu, B.; Degreave, R.; Jurczak, M.; Kittl, J.A.; Groeseneken, G.; Wouters, D.J. Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device 2012 Applied physics letters 100 29 UA library record; WoS full record; WoS citing articles doi
Dumpala, S.; Broderick, S.R.; Khalilov, U.; Neyts, E.C.; van Duin, A.C.T.; Provine, J.; Howe, R.T.; Rajan, K. Integrated atomistic chemical imaging and reactive force field molecular dynamic simulations on silicon oxidation 2015 Applied physics letters 106 19 UA library record; WoS full record; WoS citing articles url doi
Li, H.; Bender, H.; Conard, T.; Maex, K.; Gutakovskii, A.; van Landuyt, J.; Froyen, L. Interaction of a Ti-capped Co thin film with Si3N4 2000 Applied physics letters 77 3 UA library record; WoS full record; WoS citing articles pdf doi
Yang, W.; Chang, K.; Wu, X.G.; Zheng, H.Z.; Peeters, F.M.; Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport 2006 Applied physics letters 89 10 UA library record; WoS full record; WoS citing articles url doi
Milovanović, S.P.; Masir, M.R.; Peeters, F.M. Interplay between snake and quantum edge states in a graphene Hall bar with a pn-junction 2014 Applied physics letters 105 18 UA library record; WoS full record; WoS citing articles doi
Liu, Y.; Brelet, Y.; He, Z.; Yu, L.; Forestier, B.; Deng, Y.; Jiang, H.; Houard, A. Laser-induced periodic annular surface structures on fused silica surface 2013 Applied physics letters 102 19 UA library record; WoS full record; WoS citing articles doi
Lu, Y.-G.; Turner, S.; Verbeeck, J.; Janssens, S.D.; Haenen, K.; Van Tendeloo, G. Local bond length variations in boron-doped nanocrystalline diamond measured by spatially resolved electron energy-loss spectroscopy 2013 Applied physics letters 103 15 UA library record; WoS full record; WoS citing articles pdf doi
Sorée, B.; Magnus, W.; Vandenberghe, W. Low-field mobility in ultrathin silicon nanowire junctionless transistors 2011 Applied physics letters 99 20 UA library record; WoS full record; WoS citing articles url doi
Brück, S.; Paul, M.; Tian, H.; Müller, A.; Kufer, D.; Praetorius, C.; Fauth, K.; Audehm, P.; Goering, E.; Verbeeck, J.; Van Tendeloo, G.; Sing, M.; Claessen, R.; Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO 2012 Applied physics letters 100 12 UA library record; WoS full record; WoS citing articles pdf doi
Chang, K.; Xia, J.B.; Peeters, F.M. Magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot 2003 Applied physics letters 82 56 UA library record; WoS full record; WoS citing articles url doi
Müller, E.; Kruse, P.; Gerthsen, D.; Schowalter, M.; Rosenauer, A.; Lamoen, D.; Kling, R.; Waag, A. Measurement of the mean inner potential of ZnO nanorods by transmission electron holography 2005 Applied Physics Letters 86 5 UA library record; WoS full record; WoS citing articles doi
Çakir, D.; Peeters, F.M.; Sevik, C. Mechanical and thermal properties of h-MX2 (M = Cr, Mo, W; X = O, S, Se, Te) monolayers : a comparative study 2014 Applied physics letters 104 130 UA library record; WoS full record; WoS citing articles doi
Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors 2006 Applied physics letters 89 15 UA library record; WoS full record; WoS citing articles pdf doi
Zhang, Q.-Z.; Tinck, S.; de Marneffe, J.-F.; Zhang, L.; Bogaerts, A. Mechanisms for plasma cryogenic etching of porous materials 2017 Applied physics letters 111 2 UA library record; WoS full record; WoS citing articles pdf url doi
Wang, J.; Gauquelin, N.; Huijben, M.; Verbeeck, J.; Rijnders, G.; Koster, G. Metal-insulator transition of SrVO 3 ultrathin films embedded in SrVO 3 / SrTiO 3 superlattices 2020 Applied Physics Letters 117 8 UA library record; WoS full record; WoS citing articles pdf url doi
Buffière, M.; Brammertz, G.; Batuk, M.; Verbist, C.; Mangin, D.; Koble, C.; Hadermann, J.; Meuris, M.; Poortmans, J. Microstructural analysis of 9.7% efficient Cu2ZnSnSe4 thin film solar cells 2014 Applied physics letters 105 17 UA library record; WoS full record; WoS citing articles pdf url doi
Select All    Deselect All
List View
 |   | 
   print

Save Citations:
Export Records: