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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Gorbanev, Y.; Verlackt, C.C.W.; Tinck, S.; Tuenter, E.; Foubert, K.; Cos, P.; Bogaerts, A. Combining experimental and modelling approaches to study the sources of reactive species induced in water by the COST RF plasma jet 2018 Physical chemistry, chemical physics 20 23 UA library record; WoS full record; WoS citing articles pdf url doi
Zhang, Q.-Z.; Tinck, S.; de Marneffe, J.-F.; Zhang, L.; Bogaerts, A. Mechanisms for plasma cryogenic etching of porous materials 2017 Applied physics letters 111 2 UA library record; WoS full record; WoS citing articles pdf url doi
Ishikawa, K.; Karahashi, K.; Ichiki, T.; Chang, J.P.; George, S.M.; Kessels, W.M.M.; Lee, H.J.; Tinck, S.; Um, J.H.; Kinoshita, K. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? 2017 Japanese journal of applied physics 56 18 UA library record; WoS full record; WoS citing articles pdf url doi
Tinck, S.; Tillocher, T.; Georgieva, V.; Dussart, R.; Neyts, E.; Bogaerts, A. Concurrent effects of wafer temperature and oxygen fraction on cryogenic silicon etching with SF6/O2plasmas 2017 Plasma processes and polymers 14 UA library record; WoS full record; WoS citing articles pdf url doi
Tinck, S.; Tillocher, T.; Dussart, R.; Neyts, E.C.; Bogaerts, A. Elucidating the effects of gas flow rate on an SF6inductively coupled plasma and on the silicon etch rate, by a combined experimental and theoretical investigation 2016 Journal of physics: D: applied physics 49 1 UA library record; WoS full record; WoS citing articles pdf url doi
Tinck, S.; Bogaerts, A. Role of vibrationally excited HBr in a HBr/He inductively coupled plasma used for etching of silicon 2016 Journal of physics: D: applied physics 49 UA library record; WoS full record; WoS citing articles pdf url doi
Tinck, S.; Bogaerts, A. Computational study of the CF4 /CHF3 / H2 /Cl2 /O2 /HBr gas phase plasma chemistry 2016 Journal of physics: D: applied physics 49 5 UA library record; WoS full record; WoS citing articles pdf url doi
Tinck, S.; Tillocher, T.; Dussart, R.; Bogaerts, A. Cryogenic etching of silicon with SF6 inductively coupled plasmas: a combined modelling and experimental study 2015 Journal of physics: D: applied physics 48 9 UA library record; WoS full record; WoS citing articles pdf url doi
Zhang, Y.-R.; Tinck, S.; De Schepper, P.; Wang, Y.-N.; Bogaerts, A. Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime 2015 Journal of vacuum science and technology: A: vacuum surfaces and films 33 3 UA library record; WoS full record; WoS citing articles url doi
Gul, B.; Tinck, S.; De Schepper, P.; Aman-ur-Rehman; Bogaerts, A. Numerical investigation of HBr/He transformer coupled plasmas used for silicon etching 2015 Journal of physics: D: applied physics 48 7 UA library record; WoS full record; WoS citing articles pdf url doi
Tinck, S.; Neyts, E.C.; Bogaerts, A. Fluorinesilicon surface reactions during cryogenic and near room temperature etching 2014 The journal of physical chemistry: C : nanomaterials and interfaces 118 11 UA library record; WoS full record; WoS citing articles url doi
Tinck, S.; Altamirano-Sánchez, E.; De Schepper, P.; Bogaerts, A. Formation of a nanoscale SiO2 capping layer on photoresist lines with an Ar/SiCl4/O2 inductively coupled plasma : a modeling investigation 2014 Plasma processes and polymers 11 1 UA library record; WoS full record; WoS citing articles pdf doi
Tinck, S.; De Schepper, P.; Bogaerts, A. Numerical investigation of SiO2 coating deposition in wafer processing reactors with SiCl4/O2/Ar inductively coupled plasmas 2013 Plasma processes and polymers 10 3 UA library record; WoS full record; WoS citing articles pdf doi
Van Laer, K.; Tinck, S.; Samara, V.; de Marneffe, J.F.; Bogaerts, A. Etching of low-k materials for microelectronics applications by means of a N2/H2 plasma : modeling and experimental investigation 2013 Plasma sources science and technology 22 13 UA library record; WoS full record; WoS citing articles pdf doi
Tinck, S.; Bogaerts, A. Modeling SiH4/O2/Ar inductively coupled plasmas used for filling of microtrenches in shallow trench isolation (STI) 2012 Plasma processes and polymers 9 5 UA library record; WoS full record; WoS citing articles pdf doi
Tinck, S.; Boullart, W.; Bogaerts, A. Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching : effects of SiO2 chamber wall coating 2011 Plasma sources science and technology 20 22 UA library record; WoS full record; WoS citing articles pdf doi
Tinck, S.; Bogaerts, A.; Shamiryan, D. Simultaneous etching and deposition processes during the etching of silicon with a Cl2/O2/Ar inductively coupled plasma 2011 Plasma processes and polymers 8 5 UA library record; WoS full record; WoS citing articles doi
Tinck, S.; Bogaerts, A. Computer simulations of an oxygen inductively coupled plasma used for plasma-assisted atomic layer deposition 2011 Plasma sources science and technology 20 11 UA library record; WoS full record; WoS citing articles doi
Tinck, S. Numerical simulations of inductively coupled plasmas for applications in the microelectronics industry 2011 UA library record
Gou, F.; Neyts, E.; Eckert, M.; Tinck, S.; Bogaerts, A. Molecular dynamics simulations of Cl+ etching on a Si(100) surface 2010 Journal of applied physics 107 15 UA library record; WoS full record; WoS citing articles doi
Bogaerts, A.; De Bie, C.; Eckert, M.; Georgieva, V.; Martens, T.; Neyts, E.; Tinck, S. Modeling of the plasma chemistry and plasmasurface interactions in reactive plasmas 2010 Pure and applied chemistry 82 13 UA library record; WoS full record; WoS citing articles pdf doi
Tinck, S.; Boullart, W.; Bogaerts, A. Investigation of etching and deposition processes of Cl2/O2/Ar inductively coupled plasmas on silicon by means of plasmasurface simulations and experiments 2009 Journal of physics: D: applied physics 42 23 UA library record; WoS full record; WoS citing articles doi
Tinck, S.; Boullart, W.; Bogaerts, A. Simulation of an Ar/Cl2 inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments 2008 Journal of physics: D: applied physics 41 31 UA library record; WoS full record; WoS citing articles doi
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