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Van Daele, B.; Van Tendeloo, G.; Derluyn, J.; Shrivastava, P.; Lorenz, A.; Leys, M.R.; Germain, M.; Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN/GaN high-electron-mobility transistors 2006 Applied physics letters 89 15 UA library record; WoS full record; WoS citing articles pdf doi
van Daele, B.; Van Tendeloo, G.; Ruythooren, W.; Derluyn, J.; Leys, M.R.; Germain, M. Transmission electron microscopy characterisation of Ti and Al/Ti contacts on GaN and AlGaN/GaN 2005 Springer proceedings in physics 107 UA library record; WoS full record;
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