toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
List View
 |   | 
   print
  Author Title Year Publication (down) Volume Times cited Additional Links Links
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation 2014 Journal of applied physics 115 26 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. Zener tunneling in semiconductors under nonuniform electric fields 2010 Journal of applied physics 107 22 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors 2015 Journal of applied physics 118 9 UA library record; WoS full record; WoS citing articles doi
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. Inter-ribbon tunneling in graphene: An atomistic Bardeen approach 2016 Journal of applied physics 119 6 UA library record; WoS full record; WoS citing articles url doi
Moors, K.; Sorée, B.; Magnus, W. Modeling surface roughness scattering in metallic nanowires 2015 Journal of applied physics 118 11 UA library record; WoS full record; WoS citing articles url doi
Andrikopoulos, D.; Sorée, B.; De Boeck, J. Skyrmion-induced bound states on the surface of three-dimensional topological insulators 2016 Journal of applied physics 119 8 UA library record; WoS full record; WoS citing articles url doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides 2016 Journal of applied physics 120 6 UA library record; WoS full record; WoS citing articles url doi
Beckers, A.; Thewissen, M.; Sorée, B. Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors 2018 Journal of applied physics 124 3 UA library record; WoS full record; WoS citing articles pdf doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.L.; Magnus, W.; Sorée, B.; Groeseneken, G. Phonon-assisted tunneling in direct-bandgap semiconductors 2019 Journal of applied physics 125 2 UA library record; WoS full record; WoS citing articles pdf doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Magnus, W.; Collaert, N.; Mocuta, A.; Groeseneken, G. Self-consistent procedure including envelope function normalization for full-zone Schrodinger-Poisson problems with transmitting boundary conditions 2018 Journal of applied physics 124 1 UA library record; WoS full record; WoS citing articles pdf doi
Osca, J.; Sorée, B. Torque field and skyrmion motion by spin transfer torque in a quasi-2D interface in presence of strong spin-orbit interaction 2021 Journal Of Applied Physics 130 UA library record; WoS full record; WoS citing articles doi
Deylgat, E.; Chen, E.; Sorée, B.; Vandenberghe, W.G. Quantum transport study of contact resistance of edge- and top-contacted two-dimensional materials 2023 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2023, Kobe, Japan UA library record; WoS full record pdf doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Ab initio modeling of few-layer dilute magnetic semiconductors 2021 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 27-29, 2021, Dallas, TX UA library record; WoS full record pdf doi
Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Carrier transport in a two-dimensional topological insulator nanoribbon in the presence of vacancy defects 2018 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 24-26, 2018, Austin, TX UA library record; WoS full record; WoS citing articles pdf doi
Reyntjens, P.D.; Tiwari, S.; Van de Put, M.L.; Sorée, B.; Vandenberghe, W.G. Ab-initio study of magnetically intercalated Tungsten diselenide 2020 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 23-OCT 06, 2020 UA library record; WoS full record pdf doi
Moors, K.; Sorée, B.; Magnus, W. Modeling and tackling resistivity scaling in metal nanowires 2015 International Conference on Simulation of Semiconductor Processes and Devices : [proceedings] T2 – International Conference on Simulation of Semiconductor Processes and, Devices (SISPAD), SEP 09-11, 2015, Washington, DC UA library record; WoS full record url
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Direct and indirect band-to-band tunneling in germanium-based TFETs 2012 IEEE transactions on electron devices 59 212 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets 2012 IEEE transactions on electron devices 59 72 UA library record; WoS full record; WoS citing articles doi
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Signature of ballistic band-tail tunneling current in tunnel FET 2020 Ieee Transactions On Electron Devices 67 UA library record; WoS full record; WoS citing articles pdf doi
Bizindavyi, J.; Verhulst, A.S.; Smets, Q.; Verreck, D.; Sorée, B.; Groeseneken, G. Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes 2018 IEEE journal of the Electron Devices Society 6 5 UA library record; WoS full record; WoS citing articles url doi
Toledano-Luque, M.; Matagne, P.; Sibaja-Hernandez, A.; Chiarella, T.; Ragnarsson, L.-A.; Sorée, B.; Cho, M.; Mocuta, A.; Thean, A. Superior reliability of junctionless pFinFETs by reduced oxide electric field 2014 IEEE electron device letters 35 13 UA library record; WoS full record; WoS citing articles doi
Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. Temperature-dependent modeling and characterization of through-silicon via capacitance 2011 IEEE electron device letters 32 27 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.L.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Uniform strain in heterostructure tunnel field-effect transistors 2016 IEEE electron device letters 37 17 UA library record; WoS full record; WoS citing articles pdf url doi
Contino, A.; Ciofi, I.; Wu, X.; Asselberghs, I.; Celano, U.; Wilson, C.J.; Tokei, Z.; Groeseneken, G.; Sorée, B. Modeling of edge scattering in graphene interconnects 2018 IEEE electron device letters 39 1 UA library record; WoS full record; WoS citing articles pdf doi
Bizindavyi, J.; Verhulst, A.S.; Verreck, D.; Sorée, B.; Groeseneken, G. Large variation in temperature dependence of band-to-band tunneling current in tunnel devices 2019 IEEE electron device letters 40 UA library record; WoS full record; WoS citing articles pdf doi
Cantoro, M.; Klekachev, A.V.; Nourbakhsh, A.; Sorée, B.; Heyns, M.M.; de Gendt, S. Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy 2011 European physical journal : B : condensed matter and complex systems 79 10 UA library record; WoS full record; WoS citing articles doi
Sorée, B.; Magnus, W.; Szepieniec, M.; Vandenbreghe, W.; Verhulst, A.; Pourtois, G.; Groeseneken, G.; de Gendt, S.; Heyns, M. Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET 2010 ECS transactions 28 UA library record; WoS full record; WoS citing articles
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs 2018 Conference digest T2 – 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA UA library record; WoS full record
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Impact of calibrated band-tails on the subthreshold swing of pocketed TFETs 2018 Conference digest T2 – 76th Device Research Conference (DRC), JUN 24-27, 2018, Santa Barbara, CA UA library record; WoS full record doi
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Vandenberghe, W.G. Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation 2021 Communications Physics 4 UA library record; WoS full record; WoS citing articles url doi
Select All    Deselect All
List View
 |   | 
   print

Save Citations:
Export Records: