toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
 |   | 
Details
   print
  Records Links
Author Cassiers, K.; van der Voort, P.; Linssen, T.; Vansant, E.F.; Lebedev, O.; van Landuyt, J. doi  openurl
  Title A counterion-catalyzed (S0H+)(X-I+) pathway toward heat- and steam-stable mesostructured silica assembled from amines in acidic conditions Type A1 Journal article
  Year 2003 Publication The journal of physical chemistry : B : condensed matter, materials, surfaces, interfaces and biophysical Abbreviated Journal J Phys Chem B  
  Volume 107 Issue 16 Pages 3690-3696  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Laboratory of adsorption and catalysis (LADCA)  
  Abstract An alternative pathway to assemble mesoporous molecular sieve silicas is developed using nonionic alkylamines and N,N-dimethylalkylamines (SO) as structure-directing agents in acidic conditions. The synthesized mesostructures possess wormhole-like frameworks with pore sizes and pore volumes in the range of 20-90 Angstrom and 0.5-1.3 cm(3)/g, respectively. The formation of the mesophase is controlled by a counterion-mediated mechanism of the type (S(0)H(+))(X(-)I(+)), where S(0)H(+) are protonated water molecules that are hydrogen bonded to the lone electron pairs on the amine surfactant headgroups (S(0)H(+)), X(-) is the counteranion originating from the acid, and I(+) are the positively charged (protonated) silicate species. We found that the stronger the ion X(-) is bonded to S(0)H(+), the more it catalyzes the silica condensation into (S(0)H(+))(X(-)I(+)). Br(-) is shown to be a strong binding anion and therefore a fast silica polymerization promoter compared to Cl(-) resulting in the formation of a higher quality mesophase for the Br(-) syntheses. We also showed that the polymerization rate of the silica, dictated by the counterion, controls the morphology of the mesostructures from nonuniform agglomerated blocks in the case of Br(-) syntheses to spherical particles for the Cl(-) syntheses. Next to many benefits such as low temperature, short synthesis time, and the use of inexpensive, nontoxic, and easily extractable amine templates, the developed materials have a remarkable higher thermal and hydrothermal stability compared to hexagonal mesoporous silica, which is also prepared with nonionic amines but formed through the S(0)I(0) mechanism.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language (up) Wos 000182350200005 Publication Date 2003-04-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1520-6106;1520-5207; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.177 Times cited 9 Open Access  
  Notes Approved Most recent IF: 3.177; 2003 IF: 3.679  
  Call Number UA @ lucian @ c:irua:103300 Serial 24  
Permanent link to this record
 

 
Author Van Tendeloo, G.; Hadermann, J.; Abakumov, A.M.; Antipov, E.V. pdf  doi
openurl 
  Title Advanced electron microscopy and its possibilities to solve complex structures: application to transition metal oxides Type A1 Journal article
  Year 2009 Publication Journal of materials chemistry Abbreviated Journal J Mater Chem  
  Volume 19 Issue 18 Pages 2660-2670  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Design and optimization of materials properties can only be performed through a thorough knowledge of the structure of the compound. In this feature article we illustrate the possibilities of advanced electron microscopy in materials science and solid state chemistry. The different techniques are briefly discussed and several examples are given where the structures of complex oxides, often with a modulated structure, have been solved using electron microscopy.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge Editor  
  Language (up) Wos 000265740600002 Publication Date 2009-02-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0959-9428;1364-5501; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 9 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:77065 Serial 68  
Permanent link to this record
 

 
Author Corbel, G.; Attfield, J.P.; Hadermann, J.; Abakumov, A.M.; Alekseeva, A.M.; Rozova, M.G.; Antipov, E.V. pdf  doi
openurl 
  Title Anion rearrangements in fluorinated Nd2CuO3.5 Type A1 Journal article
  Year 2003 Publication Chemistry of materials Abbreviated Journal Chem Mater  
  Volume 15 Issue Pages 189-195  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington, D.C. Editor  
  Language (up) Wos 000180368000029 Publication Date 2003-01-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0897-4756;1520-5002; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 9.466 Times cited 9 Open Access  
  Notes Approved Most recent IF: 9.466; 2003 IF: 4.374  
  Call Number UA @ lucian @ c:irua:40348 Serial 123  
Permanent link to this record
 

 
Author Oleshko, V.; Gijbels, R.; Jacob, W.; Alfimov, M. openurl 
  Title Characterization of complex silver halide photographic systems by means of analytical electron microscopy Type A1 Journal article
  Year 1995 Publication Microbeam analysis Abbreviated Journal  
  Volume 4 Issue 1 Pages 1-29  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Deerfield Beach, Fla Editor  
  Language (up) Wos A1995RR65700001 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1061-3420 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 9 Open Access  
  Notes Approved PHYSICS, APPLIED 28/145 Q1 #  
  Call Number UA @ lucian @ c:irua:12275 Serial 318  
Permanent link to this record
 

 
Author Fomin, V.M.; Misko, V.R.; Devreese, J.T.; Brongersma, H.H. doi  openurl
  Title Comparative analysis of the low-energy He+ ions scattering on Al and Al2O3 surfaces Type A1 Journal article
  Year 1998 Publication Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms Abbreviated Journal Nucl Instrum Meth B  
  Volume 145 Issue Pages 545-552  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language (up) Wos 000077508800008 Publication Date 2003-04-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.109 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.109; 1998 IF: 1.093  
  Call Number UA @ lucian @ c:irua:24440 Serial 415  
Permanent link to this record
 

 
Author Niermann, T.; Verbeeck, J.; Lehmann, M. pdf  doi
openurl 
  Title Creating arrays of electron vortices Type A1 Journal article
  Year 2014 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 136 Issue Pages 165-170  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We demonstrate the production of an ordered array of electron vortices making use of an electron optical setup consisting of two electrostatic biprisms. The biprism filaments are oriented nearly orthogonal with respect to each other in a transmission electron microscope. Matching the position of the filaments, we can choose to form different topological features in the electron wave. We outline the working principle of the setup and demonstrate fist experimental results. This setup partially bridges the gap between angular momentum carried by electron spin, which is intrinsic and therefore present in any position of the wave, and angular momentum carried by the vortex character of the wave, which can be extrinsic depending on the axis around which it is measured. (C) 2013 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language (up) Wos 000327884700021 Publication Date 2013-10-15  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 9 Open Access  
  Notes FP7; Countatoms; Vortex ECASJO_; Approved Most recent IF: 2.843; 2014 IF: 2.436  
  Call Number UA @ lucian @ c:irua:112837UA @ admin @ c:irua:112837 Serial 538  
Permanent link to this record
 

 
Author Boulay, E.; Nakano, J.; Turner, S.; Idrissi, H.; Schryvers, D.; Godet, S. pdf  doi
openurl 
  Title Critical assessments and thermodynamic modeling of BaO-SiO2 and SiO2-TiO2 systems and their extensions into liquid immiscibility in the BaO-SiO2-TiO2 system Type A1 Journal article
  Year 2014 Publication Calphad computer coupling of phase diagrams and thermochemistry Abbreviated Journal Calphad  
  Volume 47 Issue Pages 68-82  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This study discusses rational reproduction of liquid immiscibility in the BaO-SiO2-TiO2 system. While a ternary assessment requires sub-binary descriptions in the same thermodynamic model, the related sub-binary systems BaO-SiO2, BaO-TiO2 and SiO2-TiO2 liquid and solid phases have been evaluated using different thermodynamic models in the literature. In this study, BaO-SiO2 and SiO2-TiO2 were assessed using the Ionic Two Sublattice model (I2SL) based on experimental data from the literature. BaO-TiO2 was already assessed using this model. Binary descriptions developed were then used for the assessment of liquid immiscibility in the BaO-SiO2-TiO2 system. Ternary interaction parameters were found necessary for rational reproduction of the new ternary experimental data gathered in the present work. The model parameters for each system were evaluated using a CAPLHAD approach. A set of parameters is proposed. They show good agreement between the calculated and experimental equilibrium liquidus, liquid immiscibility and thermochemical properties in the BaO-SiO2-TiO2 system. (C) 2014 Elsevier Ltd. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Oxford Editor  
  Language (up) Wos 000346224700008 Publication Date 2014-07-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0364-5916; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.6 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.6; 2014 IF: 1.370  
  Call Number UA @ lucian @ c:irua:122776 Serial 540  
Permanent link to this record
 

 
Author Tinck, S.; Tillocher, T.; Dussart, R.; Bogaerts, A. pdf  url
doi  openurl
  Title Cryogenic etching of silicon with SF6 inductively coupled plasmas: a combined modelling and experimental study Type A1 Journal article
  Year 2015 Publication Journal of physics: D: applied physics Abbreviated Journal J Phys D Appl Phys  
  Volume 48 Issue 48 Pages 155204  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A hybrid Monte Carlofluid model is applied to simulate the wafer-temperature-dependent etching of silicon with SF6 inductively coupled plasmas (ICP). The bulk plasma within the ICP reactor volume as well as the surface reactions occurring at the wafer are self-consistently described. The calculated etch rates are validated by experiments. The calculations and experiments are performed at two different wafer temperatures, i.e. 300 and 173 K, resembling conventional etching and cryoetching, respectively. In the case of cryoetching, a physisorbed SFx layer (x = 06) is formed on the wafer, which is negligible at room temperature, because of fast thermal desorption, However, even in the case of cryoetching, this layer can easily be disintegrated by low-energy ions, so it does not affect the etch rates. In the investigated pressure range of 19 Pa, the etch rate is always slightly higher at cryogenic conditions, both in the experiments and in the model, and this could be explained in the model due to a local cooling of the gas above the wafer, making the gas denser and increasing the flux of reactive neutrals, like F and F2, towards the wafer.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language (up) Wos 000351856600009 Publication Date 2015-03-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-3727;1361-6463; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.588 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.588; 2015 IF: 2.721  
  Call Number c:irua:124209 Serial 551  
Permanent link to this record
 

 
Author Tsirlin, A.A.; Chernaya, V.V.; Shpanchenko, R.V.; Antipov, E.V.; Hadermann, J. pdf  doi
openurl 
  Title Crystal structure and properties of the new complex vanadium oxide K2SrV3O9 Type A1 Journal article
  Year 2005 Publication Materials research bulletin Abbreviated Journal Mater Res Bull  
  Volume 40 Issue 5 Pages 800-809  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language (up) Wos 000229376500010 Publication Date 2005-03-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0025-5408; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.446 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.446; 2005 IF: 1.380  
  Call Number UA @ lucian @ c:irua:52373 Serial 564  
Permanent link to this record
 

 
Author van den Broek, B.; Houssa, M.; Pourtois, G.; Afanas'ev, V.V.; Stesmans, A. doi  openurl
  Title Current-voltage characteristics of armchair Sn nanoribbons Type A1 Journal article
  Year 2014 Publication Physica status solidi: rapid research letters Abbreviated Journal Phys Status Solidi-R  
  Volume 8 Issue 11 Pages 931-934  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Two-dimensional group-IV lattices silicene and germanene are known to share many of graphene's remarkable mechanical and electronic properties. Due to the out-of-plane buckling of the former materials, there are more means of electronic funtionalization, e.g. by applying uniaxial strain or an out-of-plane electric field. We consider monolayer hexagonal Sn (stanene) as an ideal candidate to feasibly implement and exploit graphene physics for nanoelectronic applications: with increased out-of-plane buckling and sizable spin-orbit coupling it lends itself to improved Dirac cone engineering. We investigate the ballistic charge transport regime of armchair Sn nanoribbons, classified according to the ribbon width W = {3m – 1, 3m, 3m + 1} with integer m. We study transport through (non-magnetic) armchair ribbons using a combination of density functional theory and non-equilibrium Green's functions. Sn ribbons have earlier current onsets and carry currents 20% larger than C/Si/Ge-nanoribbons as the contact resistance of these ribbons is found to be comparable. ((c) 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language (up) Wos 000345274300009 Publication Date 2014-09-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1862-6254; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.032 Times cited 9 Open Access  
  Notes Approved Most recent IF: 3.032; 2014 IF: 2.142  
  Call Number UA @ lucian @ c:irua:122148 Serial 594  
Permanent link to this record
 

 
Author Carvalho, J.C.N.; Nelissen, K.; Ferreira, W.P.; Farias, G.A.; Peeters, F.M. url  doi
openurl 
  Title Diffusion in a quasi-one-dimensional system on a periodic substrate Type A1 Journal article
  Year 2012 Publication Physical review : E : statistical, nonlinear, and soft matter physics Abbreviated Journal Phys Rev E  
  Volume 85 Issue 2:1 Pages 021136-021136,8  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The diffusion of charged particles interacting through a repulsive Yukawa potential, exp(-r/lambda)/r, confined by a parabolic potential in the y direction and subjected to a periodic substrate potential in the x direction is investigated. Langevin dynamic simulations are used to investigate the effect of the particle density, the amplitude of the periodic substrate, and the range of the interparticle interaction potential on the diffusive behavior of the particles. We found that in general the diffusion is suppressed with increasing the amplitude of the periodic potential, but for specific values of the strength of the substrate potential a remarkable increase of the diffusion is found with increasing the periodic potential amplitude. In addition, we found a strong dependence of the diffusion on the specific arrangement of the particles, e. g., single-chain versus multichain configuration. For certain particle configurations, a reentrant behavior of the diffusion is found as a function of the substrate strength due to structural transitions in the ordering of the particles.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication Woodbury (NY) Editor  
  Language (up) Wos 000300671500007 Publication Date 2012-02-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1539-3755;1550-2376; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.366 Times cited 9 Open Access  
  Notes ; This work was supported by the Brazilian agencies CNPq and FUNCAP (PRONEX-Grant), the Flemish Science Foundation (FWO-Vl), and the bilateral projects between Flanders and Brazil and the Flemish Science Foundation (FWO-VI) and CNPq. ; Approved Most recent IF: 2.366; 2012 IF: 2.313  
  Call Number UA @ lucian @ c:irua:97203 Serial 698  
Permanent link to this record
 

 
Author Anisimovas, E.; Peeters, F.M. url  doi
openurl 
  Title Dynamic response of artificial bipolar molecules Type A1 Journal article
  Year 2002 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 66 Issue 7 Pages 075311  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We calculate the equilibrium properties and the dynamic response of two vertically coupled circular quantum dots populated by particles of different electrical charge sign, i.e., electrons and holes. The equilibrium density profiles are obtained and used to compute the frequencies and oscillator strengths of magnetoplasma excitations. We find a strong coupling between the modes derived from the center-of-mass modes of the individual dots which leads to an anticrossing with a pronounced oscillator strength transfer from the “acoustic” to the “optical” branch. Also, due to the breaking of the generalized Kohn theorem a number of other than center-of-mass modes are excited whose oscillator strengths, however, are rather weak.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language (up) Wos 000177969800103 Publication Date 2002-10-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 9 Open Access  
  Notes Approved Most recent IF: 3.836; 2002 IF: NA  
  Call Number UA @ lucian @ c:irua:99397 Serial 765  
Permanent link to this record
 

 
Author Berdiyorov, G.R.; Milošević, M.V.; Peeters, F.M. pdf  doi
openurl 
  Title Dynamics of kinematic vortices in a mesoscopic superconducting loop Type A1 Journal article
  Year 2010 Publication Physica: C : superconductivity Abbreviated Journal Physica C  
  Volume 470 Issue 19 Pages 946-948  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Using the time-dependent GinzburgLandau formalism, we study the dynamic properties of a submicron superconducting loop in applied current and in presence of a perpendicular magnetic field. The resistive state of the sample is caused by the motion of kinematic vortexantivortex pairs. Vortices and antivortices move in opposite directions to each other, perpendicularly to the applied drive, and the periodic creation and annihilation of such pairs results in periodic oscillations of the voltage across the sample. The dynamics of these kinematic pairs is strongly influenced by the applied magnetic field, which for high fields leads to the flow of just vortices. Kinematic vortices can be temporarily pinned inside the loop with observable trace in the voltage vs. time characteristics.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language (up) Wos 000282454400061 Publication Date 2010-03-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.404 Times cited 9 Open Access  
  Notes ; ; Approved Most recent IF: 1.404; 2010 IF: 1.415  
  Call Number UA @ lucian @ c:irua:85039 Serial 777  
Permanent link to this record
 

 
Author Nelissen, K.; Partoens, B.; Peeters, F.M. url  doi
openurl 
  Title Dynamics of topological defects and the effects of the cooling rate on finite-size two-dimensional screened Coulomb clusters Type A1 Journal article
  Year 2007 Publication Europhysics letters Abbreviated Journal Epl-Europhys Lett  
  Volume 79 Issue 6 Pages 66001,1-5  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Paris Editor  
  Language (up) Wos 000250409500013 Publication Date 2007-08-08  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0295-5075;1286-4854; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.957 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.957; 2007 IF: 2.206  
  Call Number UA @ lucian @ c:irua:66690 Serial 785  
Permanent link to this record
 

 
Author Chen, Z.; Tan, Z.; Ji, G.; Schryvers, D.; Ouyang, Q.; Li, Z. pdf  url
doi  openurl
  Title Effect of interface evolution on thermal conductivity of vacuum hot pressed SiC/Al composites Type A1 Journal article
  Year 2015 Publication Advanced engineering materials Abbreviated Journal Adv Eng Mater  
  Volume 17 Issue 17 Pages 1076-1084  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The SiC/Al composites have been fabricated by a vacuum hot pressing (VHP) process in order to study the effect of interface evolution on the global thermal conductivity (TC). By optimizing the VHP parameters of sintering temperature and time, the three different kinds of SiC/Al interface configurations, that is, non-bonded, diffusion-bonded, and reaction-bonded interfaces, are formed and identified by measurement of relative density, X-ray diffraction, scanning and (high-resolution) transmission electron microscopy. The VHPed composite sintered at 655 °C for 60 min is fully dense and presents a tightly-adhered and clean SiC/Al interface at the nanoscale, the ideal diffusion-bonded interface being the most favorable for minimizing interfacial thermal resistance, which in turn results in the highest TC of around 270 W/mK.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Weinheim Editor  
  Language (up) Wos 000357680700019 Publication Date 2015-01-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1438-1656; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.319 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.319; 2015 IF: 1.758  
  Call Number c:irua:123000 Serial 818  
Permanent link to this record
 

 
Author Abakumov, A.; Rozova, M.; Shpanchenko, R.; Kovba, M.; Putilin, S.; Antipov, E.; Lebedev, O.; Van Tendeloo, G.; Kopnin, E.; Karpinski, J. doi  openurl
  Title Effects of fluorination on the structure and superconducting properties of Y2Ba4Cu7O14+ phases Type A1 Journal article
  Year 1998 Publication Physica: C : superconductivity Abbreviated Journal Physica C  
  Volume 301 Issue Pages 155-164  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language (up) Wos 000074516500005 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.404 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.404; 1998 IF: 1.086  
  Call Number UA @ lucian @ c:irua:25663 Serial 862  
Permanent link to this record
 

 
Author Čukarić, N.; Tadić, M.; Peeters, F.M. doi  openurl
  Title Electron and hole states in a quantum ring grown by droplet epitaxy. Influence of the layer inside the ring opening Type A1 Journal article
  Year 2010 Publication Superlattices and microstructures Abbreviated Journal Superlattice Microst  
  Volume 48 Issue 5 Pages 491-501  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The electronic structure of the conduction and valence bands of a quantum ring containing a layer inside the ring opening is modeled This structure (nanocup) consists of a GaAs nanodisk (the cup s bottom) and a GaAs nanoring (the cup s rim) which encircles the disk The whole system is embedded in an (Al Ga)As matrix and its shape resembles realistic ring structures grown by the droplet epitaxy technique The conduction-band states in the structure are modeled by the single-band effective-mass theory while the 4-band Luttinger-Kohn model is adopted to compute the valence-band states We analyze how the electronic structure of the nanocup evolves from the one of a quantum ring when the size of either the nanodisk or the nanoring is changed For that purpose (1) the width of the ring (2) the disk radius and (3) the disk height are separately varied For dimensions typical for experimentally realized structures we find that the electron wavefunctions are mainly localized inside the ring even when the thickness of the Inner layer is 90% of the ring thickness These calculations indicate that topological phenomena like the excitonic Aharonov-Bohm effect are negligibly affected by the presence of the layer inside the ring (C) 2010 Elsevier Ltd All rights reserved  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language (up) Wos 000284521400005 Publication Date 2010-09-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0749-6036; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.123 Times cited 9 Open Access  
  Notes ; The authors would like to thank Prof B Partoens for useful discussions This work was supported by the EU NoE SANDiE the Ministry of Science of Serbia the Flemish Science Foundation (FWO-VI) and the Belgian Science Policy (IAP) ; Approved Most recent IF: 2.123; 2010 IF: 1.096  
  Call Number UA @ lucian @ c:irua:95551 Serial 906  
Permanent link to this record
 

 
Author Frangis, N.; Van Tendeloo, G.; van Landuyt, J.; Muret, P.; Nguyen, T.T.A. doi  openurl
  Title Electron microscopy characterisation of erbium silicide-thin films grown on a Si(111) substrate Type A1 Journal article
  Year 1996 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 102 Issue Pages 163-168  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language (up) Wos A1996VJ86100037 Publication Date 2003-05-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.711 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15458 Serial 953  
Permanent link to this record
 

 
Author Koenraad, P.M.; van de Stadt, A.F.W.; Hai, G.Q.; Shi, J.M.; Vansant, P.; Peeters, F.M.; Devreese, J.T.; Perenboom, J.A.A.J.; Wolter, J.H. doi  openurl
  Title Electron mobility in Si delta doped GaAs Type A1 Journal article
  Year 1995 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 211 Issue Pages 462-465  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language (up) Wos A1995RD54400120 Publication Date 2003-05-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.319 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:11694 Serial 978  
Permanent link to this record
 

 
Author de Mondt, R.; Adriaensen, L.; Vangaever, F.; Lenaerts, J.; van Vaeck, L.; Gijbels, R. doi  openurl
  Title Empirical evaluation of metal deposition for the analysis of organic compounds with static secondary ion mass spectrometry (S-SIMS) Type A1 Journal article
  Year 2006 Publication Applied surface science Abbreviated Journal Appl Surf Sci  
  Volume 252 Issue 19 Pages 6652-6655  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language (up) Wos 000240609900063 Publication Date 2006-05-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0169-4332; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.387 Times cited 9 Open Access  
  Notes Approved Most recent IF: 3.387; 2006 IF: 1.436  
  Call Number UA @ lucian @ c:irua:58812 Serial 1034  
Permanent link to this record
 

 
Author Bogaerts, R.; Herlach, F.; de Keyser, A.; Peeters, F.M.; DeRosa, F.; Palmstrøm, C.J.; Brehmer, D.; Allen, S.J. doi  openurl
  Title Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields Type A1 Journal article
  Year 1996 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 53 Issue Pages 15951-15963  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language (up) Wos A1996UT77000086 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.736 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:15794 Serial 1137  
Permanent link to this record
 

 
Author Bogaerts, R.; van Esch, A.; van Bockstal, L.; Herlach, F.; Peeters, F.M.; DeRosa, F.; Palmstrøm, C.J.; Allen, S.J. doi  openurl
  Title Experimental study of the energy band structure of Sc1-xErxAs layers in pulsed magnetic fields Type A1 Journal article
  Year 1993 Publication Physica: B : condensed matter Abbreviated Journal Physica B  
  Volume 184 Issue Pages 232-235  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language (up) Wos A1993KU62100047 Publication Date 2002-10-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4526; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.319 Times cited 9 Open Access  
  Notes Approved no  
  Call Number UA @ lucian @ c:irua:5791 Serial 1143  
Permanent link to this record
 

 
Author Tian, H.; Schryvers, D.; Mohanchandra, K.P.; Carman, G.P.; van Humbeeck, J. pdf  doi
openurl 
  Title Fabrication and characterization of functionally graded Ni-Ti multilayer thin films Type A1 Journal article
  Year 2009 Publication Functional materials letters Abbreviated Journal Funct Mater Lett  
  Volume 2 Issue 2 Pages 61-66  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A functionally graded multilayer NiTi thin film was deposited on a SiO2/Si substrate by d.c. sputtering using a ramped heated NiTi alloy target. The stand-alone films were crystallized at 500°C in vacuum better than 10-7 Torr. Transmission electron microscopy micrographs taken along the film cross section show two distinct regions, thin and thick, with weak R and B2 phases, respectively. The film compositions along the thickness were measured and quantified using the standard-less EELSMODEL method. The film deposited during the initial thermal ramp (thin regions) displays an average of 54 at.% Ni while the film deposited at a more elevated target temperature (thick regions) shows about 51 at.% Ni.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language (up) Wos 000271077000003 Publication Date 2009-07-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1793-6047;1793-7213; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.234 Times cited 9 Open Access  
  Notes Fwo Approved Most recent IF: 1.234; 2009 IF: 2.561  
  Call Number UA @ lucian @ c:irua:77655 Serial 1165  
Permanent link to this record
 

 
Author Zhang, Y.-R.; Gao, F.; Li, X.-C.; Bogaerts, A.; Wang, Y.-N. url  doi
openurl 
  Title Fluid simulation of the bias effect in inductive/capacitive discharges Type A1 Journal article
  Year 2015 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 33 Issue 33 Pages 061303  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0300V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120V at 2MHz and 90V at 27.12 MHz.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language (up) Wos 000365503800020 Publication Date 2015-08-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101;1520-8559; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.374; 2015 IF: 2.322  
  Call Number c:irua:126824 Serial 1229  
Permanent link to this record
 

 
Author Frangis, N.; Stoemenos, J.; van Landuyt, J.; Nejim, A.; Hemment, P.L.F. openurl 
  Title The formation of 3C-SiC in crystalline Si by carbon implantation at 9500C and annealing: a structural study Type A1 Journal article
  Year 1997 Publication Journal of crystal growth Abbreviated Journal J Cryst Growth  
  Volume 181 Issue Pages 218-228  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language (up) Wos A1997YD52700007 Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-0248 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.751 Times cited 9 Open Access  
  Notes Approved Most recent IF: 1.751; 1997 IF: 1.259  
  Call Number UA @ lucian @ c:irua:21415 Serial 1253  
Permanent link to this record
 

 
Author Galvan-Moya, J.E.; Misko, V.R.; Peeters, F.M. url  doi
openurl 
  Title Generic ordering of structural transitions in quasi-one-dimensional Wigner crystals Type A1 Journal article
  Year 2014 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 90 Issue 9 Pages 094111  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We investigate the dependence of the structural phase transitions in an infinite quasi-one-dimensional system of repulsively interacting particles on the profile of the confining channel. Three different functional expressions for the confinement potential related to real experimental systems are used that can be tuned continuously from a parabolic to a hard-wall potential in order to find a thorough understanding of the ordering of the chainlike structure transitions. We resolve the long-standing issue why the most theories predicted a 1-2-4-3-4 sequence of chain configurations with increasing density, while some experiments found the 1-2-3-4 sequence.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language (up) Wos 000342127000001 Publication Date 2014-09-17  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 9 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-VI) and the Odysseus and Methusalem programmes of the Flemish government. Computational resources were provided by HPC infrastructure of the University of Antwerp (CalcUA), a division of the Flemish Supercomputer Center (VSC). ; Approved Most recent IF: 3.836; 2014 IF: 3.736  
  Call Number UA @ lucian @ c:irua:119904 Serial 1326  
Permanent link to this record
 

 
Author Reijniers, J.; Peeters, F.M.; Matulis, A. doi  openurl
  Title The Hall resistivity of a two-dimensional electron gas in the presence of magnetic clusters with perpendicular magnetization Type A1 Journal article
  Year 2000 Publication Physica. E: Low-dimensional systems and nanostructures Abbreviated Journal Physica E  
  Volume 6 Issue Pages 759-762  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher North-Holland Place of Publication Amsterdam Editor  
  Language (up) Wos 000085770600180 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1386-9477; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.221 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.221; 2000 IF: 0.878  
  Call Number UA @ lucian @ c:irua:28525 Serial 1405  
Permanent link to this record
 

 
Author Zhang, Q.-Z.; Liu, Y.-X.; Jiang, W.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Heating mechanism in direct current superposed single-frequency and dual-frequency capacitively coupled plasmas Type A1 Journal article
  Year 2013 Publication Plasma sources science and technology Abbreviated Journal Plasma Sources Sci T  
  Volume 22 Issue 2 Pages 025014-25018  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work particle-in-cell/Monte Carlo collision simulations are performed to study the heating mechanism and plasma characteristics in direct current (dc) superposed radio-frequency (RF) capacitively coupled plasmas, operated both in single-frequency (SF) and dual-frequency (DF) regimes. An RF (60/2 MHz) source is applied on the bottom electrode to sustain the discharge, and a dc source is fixed on the top electrode. The heating mechanism appears to be very different in dc superposed SF and DF discharges. When only a single source of 60 MHz is applied, the plasma bulk region is reduced by the dc source, thus the ionization rate and hence the electron density decrease with rising dc voltage. However, when a DF source of 60 and 2 MHz is applied, the electron density can increase upon addition of a dc voltage, depending on the gap length and applied dc voltage. This is explained from the spatiotemporal ionization rates in the DF discharge. In fact, a completely different behavior is observed for the ionization rate in the two half-periods of the LF source. In the first LF half-period, the situation resembles the dc superposed SF discharge, and the reduced plasma bulk region due to the negative dc bias results in a very small effective discharge area and a low ionization rate. On the other hand, in the second half-period, the negative dc bias is to some extent counteracted by the LF voltage, and the sheath close to the dc electrode becomes particularly thin. Consequently, the amplitude of the high-frequency sheath oscillations at the top electrode is largely enhanced, while the LF sheath at the bottom electrode is in its expanding phase and can thus well confine the high-energy electrons. Therefore, the ionization rate increases considerably in this second LF half-period. Furthermore, in addition to the comparison between SF and DF discharges and the effect of gap length and dc voltage, the effect of secondary electrons is examined.  
  Address  
  Corporate Author Thesis  
  Publisher Institute of Physics Place of Publication Bristol Editor  
  Language (up) Wos 000317275400016 Publication Date 2013-03-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0963-0252;1361-6595; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.302 Times cited 9 Open Access  
  Notes Approved Most recent IF: 3.302; 2013 IF: 3.056  
  Call Number UA @ lucian @ c:irua:106877 Serial 1413  
Permanent link to this record
 

 
Author Zhang, Q.-Z.; Wang, Y.-N.; Bogaerts, A. pdf  doi
openurl 
  Title Heating mode transition in a hybrid direct current/dual-frequency capacitively coupled CF4 discharge Type A1 Journal article
  Year 2014 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 115 Issue 22 Pages 223302-223306  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Computer simulations based on the particle-in-cell/Monte Carlo collision method are performed to study the plasma characteristics and especially the transition in electron heating mechanisms in a hybrid direct current (dc)/dual-frequency (DF) capacitively coupled CF 4 discharge. When applying a superposed dc voltage, the plasma density first increases, then decreases, and finally increases again, which is in good agreement with experiments. This trend can be explained by the transition between the four main heating modes, i.e., DF coupling, dc and DF coupling, dc source dominant heating, and secondary electron dominant heating.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language (up) Wos 000337891800006 Publication Date 2014-06-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.068; 2014 IF: 2.183  
  Call Number UA @ lucian @ c:irua:117347 Serial 1414  
Permanent link to this record
 

 
Author Retuerto, M.; Li, M.R.; Go, Y.B.; Ignatov, A.; Croft, M.; Ramanujachary, K.V.; Herber, R.H.; Nowik, I.; Hodges, J.P.; Dachraoui, W.; Hadermann, J.; Greenblatt, M.; pdf  doi
openurl 
  Title High magnetic ordering temperature in the perovskites Sr4-xLaxFe3ReO12 (x=0.0, 1.0, 2.0) Type A1 Journal article
  Year 2012 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 194 Issue Pages 48-58  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A series of perovskites Sr4−xLaxFe3ReO12 (x=0.0, 1.0, 2.0) has been prepared by wet chemistry methods. The structure analyses by powder X-ray and neutron diffraction and electron microscopy show that these compounds adopt simple perovskite structures without cation ordering over the B sites: tetragonal (I4/mcm) for x=0.0 and 1.0 and orthorhombic (Pbmn) for x=2.0. The oxidation states of the cations in the compound with x=0.0 appear to be Fe3+/4+ and Re7+ and decrease for both with La substitution as evidenced by X-ray absorption spectroscopy. All the compounds are antiferromagnetically ordered above room temperature, as demonstrated by Mössbauer spectroscopy and the magnetic structures, which were determined by powder neutron diffraction. The substitution of Sr by La strongly affects the magnetic properties with an increase of TN up to ∼750 K.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language (up) Wos 000308896400009 Publication Date 2012-07-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.299 Times cited 9 Open Access  
  Notes Approved Most recent IF: 2.299; 2012 IF: 2.040  
  Call Number UA @ lucian @ c:irua:101220 Serial 1435  
Permanent link to this record
Select All    Deselect All
 |   | 
Details
   print

Save Citations:
Export Records: