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  Author Title Year Publication Volume Times cited Additional Links Links
Sorée, B.; Pham, A.-T.; Sels, D.; Magnus, W. The junctionless nanowire transistor 2011 UA library record
Magnus, W.; Carrillo-Nunez, H.; Sorée, B. Transport in nanostructures 2011 UA library record
Tiwari, S.; Vanherck, J.; Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B. Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy 2021 Physical review research 3 UA library record; WoS full record; WoS citing articles url doi
Vandenberghe, W.G.; Verhulst, A.S.; Sorée, B.; Magnus, W.; Groeseneken, G.; Smets, Q.; Heyns, M.; Fischetti, M.V. Figure of merit for and identification of sub-60 mV/decade devices 2013 Applied physics letters 102 64 UA library record; WoS full record; WoS citing articles pdf doi
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. Impact of field-induced quantum confinement in tunneling field-effect devices 2011 Applied physics letters 98 76 UA library record; WoS full record; WoS citing articles doi
Sorée, B.; Magnus, W.; Vandenberghe, W. Low-field mobility in ultrathin silicon nanowire junctionless transistors 2011 Applied physics letters 99 20 UA library record; WoS full record; WoS citing articles url doi
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors 2012 Applied physics letters 100 25 UA library record; WoS full record; WoS citing articles doi
O'Regan, T.P.; Hurley, P.K.; Sorée, B.; Fischetti, M.V. Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures : charge quantization and nonparabolic corrections 2010 Applied Physics Letters 96 26 UA library record; WoS full record; WoS citing articles doi
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors 2016 Applied physics letters 108 13 UA library record; WoS full record; WoS citing articles doi
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. Can p-channel tunnel field-effect transistors perform as good as n-channel? 2014 Applied physics letters 105 8 UA library record; WoS full record; WoS citing articles url doi
Vanherck, J.; Bacaksiz, C.; Sorée, B.; Milošević, M.V.; Magnus, W. 2D ferromagnetism at finite temperatures under quantum scrutiny 2020 Applied Physics Letters 117 8 UA library record; WoS full record; WoS citing articles pdf doi
Duflou, R.; Ciubotaru, F.; Vaysset, A.; Heyns, M.; Sorée, B.; Radu, I.P.; Adelmann, C. Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides 2017 Applied physics letters 111 UA library record; WoS full record; WoS citing articles url doi
Verreck, D.; Verhulst, A.S.; Sorée, B.; Collaert, N.; Mocuta, A.; Thean, A.; Groeseneken, G. Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic 2014 Applied physics letters 105 10 UA library record; WoS full record; WoS citing articles doi
Bizindavyi, J.; Verhulst, A.S.; Sorée, B.; Groeseneken, G. Signature of ballistic band-tail tunneling current in tunnel FET 2020 Ieee Transactions On Electron Devices 67 UA library record; WoS full record; WoS citing articles pdf doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. Direct and indirect band-to-band tunneling in germanium-based TFETs 2012 IEEE transactions on electron devices 59 212 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. Optimization of gate-on-source-only tunnel FETs with counter-doped pockets 2012 IEEE transactions on electron devices 59 72 UA library record; WoS full record; WoS citing articles doi
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology 2009 Journal of applied physics 106 3 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach 2011 Journal of applied physics 109 41 UA library record; WoS full record; WoS citing articles doi
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. A method to calculate tunneling leakage currents in silicon inversion layers 2006 Journal of applied physics 100 1 UA library record; WoS full record; WoS citing articles doi
Verhulst, A.; Sorée, B.; Leonelli, D.; Vandenberghe, W.G.; Groeseneken, G. Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor 2010 Journal Of Applied Physics 107 150 UA library record; WoS full record; WoS citing articles doi
Carrillo-Nuñez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. Phonon-assisted Zener tunneling in a cylindrical nanowire transistor 2013 Journal of applied physics 113 4 UA library record; WoS full record; WoS citing articles doi
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers 2009 Journal of applied physics 106 29 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor 2004 Journal of applied physics 96 14 UA library record; WoS full record; WoS citing articles doi
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor 2003 Journal of applied physics 93 16 UA library record; WoS full record; WoS citing articles doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. Zener tunneling in semiconductors under nonuniform electric fields 2010 Journal of applied physics 107 22 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors 2015 Journal of applied physics 118 9 UA library record; WoS full record; WoS citing articles doi
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. Inter-ribbon tunneling in graphene: An atomistic Bardeen approach 2016 Journal of applied physics 119 6 UA library record; WoS full record; WoS citing articles url doi
Moors, K.; Sorée, B.; Magnus, W. Modeling surface roughness scattering in metallic nanowires 2015 Journal of applied physics 118 11 UA library record; WoS full record; WoS citing articles url doi
Andrikopoulos, D.; Sorée, B.; De Boeck, J. Skyrmion-induced bound states on the surface of three-dimensional topological insulators 2016 Journal of applied physics 119 8 UA library record; WoS full record; WoS citing articles url doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides 2016 Journal of applied physics 120 6 UA library record; WoS full record; WoS citing articles url doi
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