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Author van der Linden, V.; Bultinck, E.; de Ruytter, J.; Schalm, O.; Janssens, K.; Devos, W.; Tiri, W. doi  openurl
  Title Compositional analysis of 17-18th century archaeological glass fragments, excavated in Mechelen, Belgium: comparison with data from neighboring cities in the Low Countries Type A1 Journal article
  Year 2005 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms Abbreviated Journal Nucl Instrum Meth B  
  Volume 239 Issue 1/2 Pages 100-106  
  Keywords A1 Journal article; AXES (Antwerp X-ray Analysis, Electrochemistry and Speciation); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000233514700013 Publication Date 2005-08-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.109 Times cited 15 Open Access  
  Notes Approved (up) Most recent IF: 1.109; 2005 IF: 1.181  
  Call Number UA @ lucian @ c:irua:56068 Serial 444  
Permanent link to this record
 

 
Author Neyts, E.; Bogaerts, A.; Gijbels, R.; Benedikt, J.; van de Sanden, M.C.M. doi  openurl
  Title Molecular dynamics simulation of the impact behaviour of various hydrocarbon species on DLC Type A1 Journal article
  Year 2005 Publication Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms Abbreviated Journal Nucl Instrum Meth B  
  Volume 228 Issue Pages 315-318  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000226669800052 Publication Date 2004-12-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-583X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.109 Times cited 19 Open Access  
  Notes Approved (up) Most recent IF: 1.109; 2005 IF: 1.181  
  Call Number UA @ lucian @ c:irua:49873 Serial 2172  
Permanent link to this record
 

 
Author Adriaens, A.; Goossens, D.; Pijpers, A.; Van Tendeloo, G.; Gijbels, R. doi  openurl
  Title Dissolution study of potassium feldspars using hydrothermally treated sanidine as an example Type A1 Journal article
  Year 1999 Publication Surface and interface analysis Abbreviated Journal Surf Interface Anal  
  Volume 27 Issue Pages 8-23  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000078240800002 Publication Date 2002-09-11  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0142-2421;1096-9918; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.132 Times cited 4 Open Access  
  Notes Approved (up) Most recent IF: 1.132; 1999 IF: 1.705  
  Call Number UA @ lucian @ c:irua:22726 Serial 741  
Permanent link to this record
 

 
Author de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. doi  openurl
  Title SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding Type A1 Journal article
  Year 2000 Publication Surface and interface analysis Abbreviated Journal Surf Interface Anal  
  Volume 29 Issue Pages 761-765  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000165476500006 Publication Date 2002-08-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0142-2421;1096-9918; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.132 Times cited 4 Open Access  
  Notes Approved (up) Most recent IF: 1.132; 2000 IF: 1.215  
  Call Number UA @ lucian @ c:irua:34072 Serial 3007  
Permanent link to this record
 

 
Author Bogaerts, A.; Chen, Z.; Gijbels, R. doi  openurl
  Title Glow discharge modelling: from basic understanding towards applications Type A1 Journal article
  Year 2003 Publication Surface and interface analysis Abbreviated Journal Surf Interface Anal  
  Volume 35 Issue Pages 593-603  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000184687500007 Publication Date 2003-08-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0142-2421;1096-9918; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.132 Times cited 14 Open Access  
  Notes Approved (up) Most recent IF: 1.132; 2003 IF: 1.014  
  Call Number UA @ lucian @ c:irua:44020 Serial 1350  
Permanent link to this record
 

 
Author Oleshko, V.P.; Gijbels, R.H.; van Daele, A.J.; Jacob, W.A.; Xu, Y.-E.; Wang, S.-E.; Park, I.-Y.; Kang, T.-S. doi  openurl
  Title Combined characterization of composite tabular silver halide microcrystals by cryo-EFTEM/EELS and cryo-STEM/EDX techniques Type A1 Journal article
  Year 1998 Publication Microscopy research and technique Abbreviated Journal Microsc Res Techniq  
  Volume 42 Issue 2 Pages 108-122  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000075521300005 Publication Date 2002-09-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1059-910X;1097-0029; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.147 Times cited 4 Open Access  
  Notes Approved (up) Most recent IF: 1.147; 1998 IF: 0.765  
  Call Number UA @ lucian @ c:irua:24907 Serial 398  
Permanent link to this record
 

 
Author Goux, L.; Fantini, A.; Govoreanu, B.; Kar, G.; Clima, S.; Chen, Y.-Y.; Degraeve, R.; Wouters, D.J.; Pourtois, G.; Jurczak, M. doi  openurl
  Title Asymmetry and switching phenomenology in TiN\ (Al2O3) \ HfO2 \ Hf systems Type A1 Journal article
  Year 2012 Publication ECS solid state letters Abbreviated Journal Ecs Solid State Lett  
  Volume 1 Issue 4 Pages 63-65  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this letter, we address the bipolar resistive switching phenomenology in scaled TiN\HfO2\Hf cells. By means of stack engineering using a thin Al2O3 layer inserted either at the TiN\HfO2 or at the Hf\HfO2 interface, we demonstrate that the reset operation takes place close to the TiNanode. Due to the increase of the oxygen-vacancy profile from the TiN to the Hf interface, the filament-confining and wide band-gap Al2O3 layer should indeed be engineered at the interface with the TiN electrode in order to further improve the switching control and to allow reaching larger state resistances. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003204ssl] All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Electrochemical society Place of Publication Pennington (N.J.) Editor  
  Language Wos 000318340300005 Publication Date 2012-08-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2162-8742;2162-8750; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.184 Times cited 11 Open Access  
  Notes Approved (up) Most recent IF: 1.184; 2012 IF: NA  
  Call Number UA @ lucian @ c:irua:108530 Serial 160  
Permanent link to this record
 

 
Author Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; url  doi
openurl 
  Title Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates Type A1 Journal article
  Year 2013 Publication ECS solid state letters Abbreviated Journal Ecs Solid State Lett  
  Volume 2 Issue 11 Pages P104-P106  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Electrochemical society Place of Publication Pennington (N.J.) Editor  
  Language Wos 000324582600006 Publication Date 2013-09-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2162-8742;2162-8750; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.184 Times cited 12 Open Access  
  Notes Approved (up) Most recent IF: 1.184; 2013 IF: 0.781  
  Call Number UA @ lucian @ c:irua:111208 Serial 1070  
Permanent link to this record
 

 
Author Le Compte, M.; Cardenas De La Hoz, E.; Peeters, S.; Smits, E.; Lardon, F.; Roeyen, G.; Vanlanduit, S.; Prenen, H.; Peeters, M.; Lin, A.; Deben, C. url  doi
openurl 
  Title Multiparametric tumor organoid drug screening using widefield live-cell imaging for bulk and single-organoid analysis Type A1 Journal article
  Year 2022 Publication Jove-Journal Of Visualized Experiments Abbreviated Journal Jove-J Vis Exp  
  Volume Issue 190 Pages 1-18  
  Keywords A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT); Antwerp Surgical Training, Anatomy and Research Centre (ASTARC); Center for Oncological Research (CORE)  
  Abstract Patient-derived tumor organoids (PDTOs) hold great promise for preclinical and translational research and predicting the patient therapy response from ex vivo drug screenings. However, current adenosine triphosphate (ATP)-based drug screening assays do not capture the complexity of a drug response (cytostatic or cytotoxic) and intratumor heterogeneity that has been shown to be retained in PDTOs due to a bulk readout. Live-cell imaging is a powerful tool to overcome this issue and visualize drug responses more in-depth. However, image analysis software is often not adapted to the three-dimensionality of PDTOs, requires fluorescent viability dyes, or is not compatible with a 384-well microplate format. This paper describes a semi-automated methodology to seed, treat, and image PDTOs in a high-throughput, 384-well format using conventional, widefield, live-cell imaging systems. In addition, we developed viability marker-free image analysis software to quantify growth rate-based drug response metrics that improve reproducibility and correct growth rate variations between different PDTO lines. Using the normalized drug response metric, which scores drug response based on the growth rate normalized to a positive and negative control condition, and a fluorescent cell death dye, cytotoxic and cytostatic drug responses can be easily distinguished, profoundly improving the classification of responders and non-responders. In addition, drug-response heterogeneity can by quantified from single-organoid drug response analysis to identify potential, resistant clones. Ultimately, this method aims to improve the prediction of clinical therapy response by capturing a multiparametric drug response signature, which includes kinetic growth arrest and cell death quantification. ,  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000928020400010 Publication Date 2022-12-24  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1940-087x ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.2 Times cited Open Access OpenAccess  
  Notes Approved (up) Most recent IF: 1.2  
  Call Number UA @ admin @ c:irua:193168 Serial 7271  
Permanent link to this record
 

 
Author Fei, G.; Xue-Chun, L.; Zhao, S.-X.; You-Nian, W. pdf  doi
openurl 
  Title Spatial variation behaviors of argon inductively coupled plasma during discharge mode transition Type A1 Journal article
  Year 2012 Publication Chinese physics B Abbreviated Journal Chinese Phys B  
  Volume 21 Issue 7 Pages 075203  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A Langmuir probe and an ICCD are employed to study the discharge mode transition in Ar inductively coupled plasma. Electron density and plasma emission intensity are measured during the E (capacitive discharge) to H (inductive discharge) mode transitions at different pressures. It is found that plasma exists with a low electron density and a weak emission intensity in the E mode, while it has a high electron density and a strong emission intensity in the H mode. Meanwhile, the plasma emission intensity spatial (2D image) profile is symmetrical in the H mode, but the 2D image is an asymmetric profile in the E mode. Moreover, the electron density and emission intensity jump up discontinuously at high pressure, but increase almost continuously at the E to H mode transition under low pressure.  
  Address  
  Corporate Author Thesis  
  Publisher IOP publishing Place of Publication Bristol Editor  
  Language Wos 000306558300058 Publication Date 2012-07-19  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1674-1056; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.223 Times cited 11 Open Access  
  Notes Approved (up) Most recent IF: 1.223; 2012 IF: 1.148  
  Call Number UA @ lucian @ c:irua:100843 Serial 3065  
Permanent link to this record
 

 
Author Pietanza, L.D.; Guaitella, O.; Aquilanti, V.; Armenise, I.; Bogaerts, A.; Capitelli, M.; Colonna, G.; Guerra, V.; Engeln, R.; Kustova, E.; Lombardi, A.; Palazzetti, F.; Silva, T. pdf  url
doi  openurl
  Title Advances in non-equilibrium $$\hbox {CO}_2$$ plasma kinetics: a theoretical and experimental review Type A1 Journal Article
  Year 2021 Publication European Physical Journal D Abbreviated Journal Eur Phys J D  
  Volume 75 Issue 9 Pages 237  
  Keywords A1 Journal Article; Plasma, laser ablation and surface modeling Antwerp (PLASMANT) ;  
  Abstract Numerous applications have required the study of CO2 plasmas since the 1960s, from CO2 lasers to spacecraft heat shields. However, in recent years, intense research activities on the subject have restarted because of environmental problems associated with CO2 emissions. The present review provides a synthesis of the current state of knowledge on the physical chemistry of cold CO2 plasmas. In particular, the different modeling approaches implemented to address specific aspects of CO2 plasmas are presented. Throughout the paper, the importance of conducting joint experimental, theoretical and modeling studies to elucidate the complex couplings at play in CO2 plasmas is emphasized. Therefore, the experimental data that are likely to bring relevant constraints to the different modeling approaches are first reviewed. Second, the calculation of some key elementary processes obtained with semi-empirical, classical and quantum methods is presented. In order to describe the electron kinetics, the latest coherent sets of cross section satisfying the constraints of “electron swarm” analyses are introduced, and the need for self-consistent calculations for determining accurate electron energy distribution function (EEDF) is evidenced. The main findings of the latest zero-dimensional (0D) global models about the complex chemistry of CO2 and its dissociation products in different plasma discharges are then given, and full state-to-state (STS) models of only the vibrational-dissociation kinetics developed for studies of spacecraft shields are described. Finally, two important points for all applications using CO2 containing plasma are discussed: the role of surfaces in contact with the plasma, and the need for 2D/3D models to capture the main features of complex reactor geometries including effects induced by fluid dynamics on the plasma properties. In addition to bringing together the latest advances in the description of CO2 non-equilibrium plasmas, the results presented here also highlight the fundamental data that are still missing and the possible routes that still need to be investigated.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000692394800001 Publication Date 2021-09-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1434-6060 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.288 Times cited Open Access OpenAccess  
  Notes Russian Science Foundation, project 19-11-00041 ; Marie Skłodowska-Curie Actions, grant agreement 813393 grant agreement 813393 ; H2020 Marie Skłodowska-Curie Actions, grant agreement 813393 grant agreement 813393 ; Fundação para a Ciência e a Tecnologia, UIDB/50010/2020 and UIDP/50010/2020 UIDB/50010/2020 and UIDP/50010/2020 ; Università degli Studi di Perugia, AMIS project (Dipartimenti di Eccellenza-2018-2022) Dipartimento di Chimica, Biologia e Biotecnologie (Fondo Ricerca di Base 2019 program)) ; agenzia spaziale italiana, ASI N. 2019-3-U.0 ; The work of Kustova is supported by the Russian Science Foundation, project 19-11-00041. The work of Guerra, Bogaerts, Engeln and Guaitella has received funding from the European Union’s Horizon 2020 research and innovation programme under the Marie SklodowskaCurie grant agreement No 813393, Guerra and Silva were partially funded by the Portuguese FCT – Fundação para Approved (up) Most recent IF: 1.288  
  Call Number PLASMANT @ plasmant @c:irua:181081 Serial 6809  
Permanent link to this record
 

 
Author Duan, Z.L.; Chen, Z.Y.; Zhang, J.T.; Feng, X.L.; Xu, Z.Z. doi  openurl
  Title Scheme for the generation of entangled atomic state in cavity QED Type A1 Journal article
  Year 2004 Publication European physical journal : D : atomic, molecular and optical physics Abbreviated Journal Eur Phys J D  
  Volume 30 Issue 2 Pages 275-278  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract We propose a scheme to generate the entangled state of two Lambda-type three-level atoms trapped in a cavity. The atoms are initially prepared in their excited state and the cavity in vacuum state. Each atom has two possibilities to deexcite to one of the ground states. If two different polarized photons are detected subsequently, it is sure that both atoms are in different ground states. But which atom is in which ground state cannot be determined, the atoms are thus prepared in a superposition of two ground states, i.e., an entangled state. In comparison with the proposal of Hong and Lee [Phys. Rev. Lett. 89, 237901 (2002)], the requirement of a single polarized photon source can be avoided in our scheme.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Berlin Editor  
  Language Wos 000223019400013 Publication Date 2004-07-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1434-6060;1434-6079; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.288 Times cited 4 Open Access  
  Notes Approved (up) Most recent IF: 1.288; 2004 IF: 1.692  
  Call Number UA @ lucian @ c:irua:94796 Serial 2954  
Permanent link to this record
 

 
Author Yuan, X.; Yu, W.; Yu, M.Y.; Chen, Z.Y.; Liu, J.R.; Lu, P.X.; Li, R.X.; Qian, L.J.; Lu, B.D. pdf  doi
openurl 
  Title Long-distance channeling and focusing of lasers in plasmas Type A1 Journal article
  Year 2002 Publication Physica scripta Abbreviated Journal Phys Scripta  
  Volume 66 Issue 5 Pages 381-384  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The propagation of a short laser beam in plasma is investigated analytically Relativistic ponderomotive force and space charge effects are included, and an equation describing the evolution of the laser spot size is derived. It is shown that self-consistent electron cavitation can lead to self channelling and thus long-distance self-focusing of the laser. The condition for the latter to occur is given.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Stockholm Editor  
  Language Wos 000179465400008 Publication Date 2003-07-31  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8949;1402-4896; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.28 Times cited 2 Open Access  
  Notes Approved (up) Most recent IF: 1.28; 2002 IF: 0.748  
  Call Number UA @ lucian @ c:irua:95120 Serial 1835  
Permanent link to this record
 

 
Author Chen, Z.; Kong, M.; Milošević, M.V.; Wu, Y. doi  openurl
  Title Ground state configurations of two-dimensional plasma crystals under long-range attractive particle interaction force Type A1 Journal article
  Year 2003 Publication Physica scripta Abbreviated Journal Phys Scripta  
  Volume 67 Issue 5 Pages 439  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Stockholm Editor  
  Language Wos 000183154800014 Publication Date 2003-07-31  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8949;1402-4896; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.28 Times cited 4 Open Access  
  Notes Approved (up) Most recent IF: 1.28; 2003 IF: 0.688  
  Call Number UA @ lucian @ c:irua:57249 Serial 1385  
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Author Bogaerts, A.; Gijbels, R.; Grozeva, M.; Sabotinov, N. doi  openurl
  Title Investigation of laser output power saturation in the He-Cu+ IR hollow cathode discharge laser by experiments and numerical modeling Type A1 Journal article
  Year 2003 Publication Physica scripta Abbreviated Journal Phys Scripta  
  Volume T105 Issue Pages 90-97  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Stockholm Editor  
  Language Wos 000184344900014 Publication Date 2003-07-31  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8949; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.28 Times cited Open Access  
  Notes Approved (up) Most recent IF: 1.28; 2003 IF: 0.688  
  Call Number UA @ lucian @ c:irua:44019 Serial 1733  
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Author Chen, Z.; Feng, X.; Xu, Y.; Yu, M.Y. pdf  doi
openurl 
  Title Optical bistability and multistability in four-level systems Type A1 Journal article
  Year 2003 Publication Physica scripta Abbreviated Journal Phys Scripta  
  Volume 68 Issue 3 Pages 199-204  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The optical behavior of a four-level system in a ring cavity driven by two coherent laser fields is studied. One laser field is treated as the incident field and the other the control field, respectively. It is found that there is optical transparency when the difference between the two frequency detunings of the incident and control fields from the corresponding atomic transition frequencies is zero. Optical bistability can be produced and controlled by increasing the magnitude of the frequency difference. The bistable hysteresis becomes larger when the frequency difference is increased. Further increase of the latter can lead to onset of multistability.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Stockholm Editor  
  Language Wos 000185204400005 Publication Date 2003-08-04  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8949;1402-4896; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.28 Times cited 8 Open Access  
  Notes Approved (up) Most recent IF: 1.28; 2003 IF: 0.688  
  Call Number UA @ lucian @ c:irua:94844 Serial 2471  
Permanent link to this record
 

 
Author Chen, Z.; Yu, M.Y.; Luo, H. doi  openurl
  Title Molecular dynamics simulation of dust clusters in plasmas Type A1 Journal article
  Year 2005 Publication Physica scripta Abbreviated Journal Phys Scripta  
  Volume 71 Issue 6 Pages 638-643  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Finite and infinite three-dimensional dust systems and their configurational and transport properties are investigated by Molecular Dynamics simulation. The model dust-dust interaction potential includes an attraction part. Spherical dust clusters or balls are found and their structural and transport properties studied. Qualitatively, the cluster structure agrees well with recent experimental results.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Stockholm Editor  
  Language Wos 000230087300010 Publication Date 2006-01-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8949;1402-4896; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.28 Times cited 13 Open Access  
  Notes Approved (up) Most recent IF: 1.28; 2005 IF: 1.240  
  Call Number UA @ lucian @ c:irua:95096 Serial 2169  
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Author Wang, Y.; Yu, M.Y.; Chen, Z.Y. pdf  doi
openurl 
  Title Coherent relativistic wake wave of a charged object moving steadily in a plasma Type A1 Journal article
  Year 2011 Publication Physica scripta Abbreviated Journal Phys Scripta  
  Volume 84 Issue 2 Pages 025501,1-025501,5  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Nonlinear electron plasma waves driven by a finite-charged particle pulse or rigid object moving at relativistic speeds are investigated. Quasi-stationary smooth and spiky wake waves comoving with the object are found. Localized soliton-like solutions are also shown to exist. Relativistic effects tend to prevent their formation because of the electron mass increase. The application of the very-large-amplitude wake density waves as a source of ultrahigh-energy cosmic-ray events is discussed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Stockholm Editor  
  Language Wos 000294727900017 Publication Date 2011-07-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-8949;1402-4896; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.28 Times cited 5 Open Access  
  Notes Approved (up) Most recent IF: 1.28; 2011 IF: 1.204  
  Call Number UA @ lucian @ c:irua:92435 Serial 381  
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Author Neyts, E.; Eckert, M.; Bogaerts, A. doi  openurl
  Title Molecular dynamics simulations of the growth of thin a-C:H films under additional ion bombardment: influence of the growth species and the Ar+ ion kinetic energy Type A1 Journal article
  Year 2007 Publication Chemical vapor deposition Abbreviated Journal Chem Vapor Depos  
  Volume 13 Issue 6/7 Pages 312-318  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Weinheim Editor  
  Language Wos 000248381800007 Publication Date 2007-07-10  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0948-1907;1521-3862; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.333 Times cited 14 Open Access  
  Notes Approved (up) Most recent IF: 1.333; 2007 IF: 1.936  
  Call Number UA @ lucian @ c:irua:64532 Serial 2176  
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Author Eckert, M.; Neyts, E.; Bogaerts, A. doi  openurl
  Title Molecular dynamics simulations of the sticking and etch behavior of various growth species of (ultra)nanocrystalline diamond films Type A1 Journal article
  Year 2008 Publication Chemical vapor deposition Abbreviated Journal Chem Vapor Depos  
  Volume 14 Issue 7/8 Pages 213-223  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The reaction behavior of species that may affect the growth of ultrananocrystal line and nanocrystalline diamond ((U)NCD) films is investigated by means of molecular dynamics simulations. Impacts of CHx (x = 0 – 4), C2Hx (x=0-6), C3Hx (x=0-2), C4Hx (x = 0 – 2), H, and H-2 on clean and hydrogenated diamond (100)2 x 1 and (111) 1 x 1 surfaces at two different substrate temperatures are simulated. We find that the different bonding structures of the two surfaces cause different temperature effects on the sticking efficiency. These results predict a temperature-dependent ratio of diamond (100) and (111) growth. Furthermore, predictions of which are the most important hydrocarbon species for (U)NCD growth are made.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Weinheim Editor  
  Language Wos 000259302700008 Publication Date 2008-08-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0948-1907;1521-3862; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.333 Times cited 25 Open Access  
  Notes Approved (up) Most recent IF: 1.333; 2008 IF: 1.483  
  Call Number UA @ lucian @ c:irua:70001 Serial 2177  
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Author Baguer, N.; Neyts, E.; van Gils, S.; Bogaerts, A. doi  openurl
  Title Study of atmospheric MOCVD of TiO2 thin films by means of computational fluid dynamics simulations Type A1 Journal article
  Year 2008 Publication Chemical vapor deposition Abbreviated Journal Chem Vapor Depos  
  Volume 14 Issue 11/12 Pages 339-346  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract This paper presents the computational study of the metal-organic (MO) CVD of titanium dioxide (TiO2) films grown using titanium tetraisopropoxide (TTIP) as a precursor and nitrogen as a carrier gas. The TiO2 films are deposited under atmospheric pressure. The effects of the precursor concentration, the substrate temperature, and the hydrolysis reaction on the deposition process are investigated. It is found that hydrolysis of the TTIP decreases the onset temperature of the gas-phase thermal decomposition, and that the deposition rate increases with the precursor concentration and with the decrease of substrate temperature. Concerning the mechanism responsible for the film growth, the model shows that at the lowest precursor concentration, the direct adsorption of the precursor is dominant, while at higher precursor concentrations, the monomer deposition becomes more important.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Weinheim Editor  
  Language Wos 000262215800003 Publication Date 2008-12-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0948-1907;1521-3862; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.333 Times cited 14 Open Access  
  Notes Approved (up) Most recent IF: 1.333; 2008 IF: 1.483  
  Call Number UA @ lucian @ c:irua:71905 Serial 3325  
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Author Heyne, M.H.; de Marneffe, J.-F.; Radu, I.; Neyts, E.C.; De Gendt, S. pdf  doi
openurl 
  Title Thermal recrystallization of short-range ordered WS2 films Type A1 Journal article
  Year 2018 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 36 Issue 5 Pages 05g501  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract The integration of van der Waals materials in nanoelectronic devices requires the deposition of few-layered MX2 films with excellent quality crystals covering a large area. In recent years, astonishing progress in the monolayer growth of WS2 and MoS2 was demonstrated, but multilayer growth resulted often in separated triangular or hexagonal islands. These polycrystalline films cannot fully employ the specific MX2 properties since they are not connected in-plane to the other domains. To coalesce separated islands, ultrahigh-temperature postdeposition anneals in H2S are applied, which are not compatible with bare silicon substrates. Starting from the deposition of stoichiometric short-ordered films, the present work studies different options for subsequent high-temperature annealing in an inert atmosphere to form crystalline films with large grains from stoichiometric films with small grains. The rapid thermal annealing, performed over a few seconds, is compared to excimer laser annealing in the nanosecond range, which are both able to crystallize the thin WS2. The WS2 recrystallization temperature can be lowered using metallic crystallization promoters (Co and Ni). The best result is obtained using a Co cap, due to the circumvention of Co and S binary phase formation below the eutectic temperature. The recrystallization above a critical temperature is accompanied by sulfur loss and 3D regrowth. These undesired effects can be suppressed by the application of a dielectric capping layer prior to annealing. A SiO2 cap can suppress the sulfur loss successfully during annealing and reveals improved material quality in comparison to noncapped films Published by the AVS.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000444033200002 Publication Date 2018-07-05  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 2 Open Access Not_Open_Access  
  Notes Approved (up) Most recent IF: 1.374  
  Call Number UA @ lucian @ c:irua:153671 Serial 5134  
Permanent link to this record
 

 
Author Bogaerts, A.; Naylor, J.; Hatcher, M.; Jones, W.J.; Mason, R. doi  openurl
  Title Influence of sticking coefficients on the behavior of sputtered atoms in an argon glow discharge: modeling and comparison with experiment Type A1 Journal article
  Year 1998 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 16 Issue 4 Pages 2400-2410  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000074852700061 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 12 Open Access  
  Notes Approved (up) Most recent IF: 1.374; 1998 IF: 1.612  
  Call Number UA @ lucian @ c:irua:24124 Serial 1634  
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Author Depla, D.; Chen, Z.Y.; Bogaerts, A.; Ignatova, V.; de Gryse, R.; Gijbels, R. doi  openurl
  Title Modeling of the target surface modification by reactive ion implantation during magnetron sputtering Type A1 Journal article
  Year 2004 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 22 Issue 4 Pages 1524-1529  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000223322000075 Publication Date 2004-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 13 Open Access  
  Notes Approved (up) Most recent IF: 1.374; 2004 IF: 1.557  
  Call Number UA @ lucian @ c:irua:47331 Serial 2137  
Permanent link to this record
 

 
Author Delabie, A.; Sioncke, S.; Rip, J.; Van Elshocht, S.; Pourtois, G.; Mueller, M.; Beckhoff, B.; Pierloot, K. doi  openurl
  Title Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates Type A1 Journal article
  Year 2012 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 30 Issue 1 Pages 01a127-01a127,10  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this work, we have studied the TMA/H(2)O (TMA Al(CH(3))(3)) atomic layer deposition (ALD) of Al(2)O(3) on hydroxyl (OH) and thiol (SH) terminated semiconductor substrates. Total reflection x-ray fluorescence reveals a complex growth-per-cycle evolution during the early ALD reaction cycles. OH and SH terminated surfaces demonstrate growth inhibition from the second reaction cycle on. Theoretical calculations, based on density functional theory, are performed on cluster models to investigate the first TMA/H(2)O reaction cycle. Based on the theoretical results, we discuss possible mechanisms for the growth inhibition from the second reaction cycle on. In addition, our calculations show that AlCH(3) groups are hydrolyzed by a H(2)O molecule adsorbed on a neighboring Al atom, independent of the type of backbonds (Si-O, Ge-O, or Ge-S) of AlCH(3). The coordination of Al remains four-fold after the first TMA/H(2)O reaction cycle. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3664090]  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000298992800027 Publication Date 2011-12-02  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 41 Open Access  
  Notes Approved (up) Most recent IF: 1.374; 2012 IF: 1.432  
  Call Number UA @ lucian @ c:irua:96253 Serial 2818  
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Author Liu, Y.-X.; Zhang, Y.-R.; Bogaerts, A.; Wang, Y.-N. pdf  doi
openurl 
  Title Electromagnetic effects in high-frequency large-area capacitive discharges : a review Type A1 Journal article
  Year 2015 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 33 Issue 33 Pages 020801  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In traditional capacitively coupled plasmas, the discharge can be described by an electrostatic model, in which the Poisson equation is employed to determine the electrostatic electric field. However, current plasma reactors are much larger and driven at a much higher frequency. If the excitation wavelength k in the plasma becomes comparable to the electrode radius, and the plasma skin depth d becomes comparable to the electrode spacing, the electromagnetic (EM) effects will become significant and compromise the plasma uniformity. In this regime, capacitive discharges have to be described by an EM model, i.e., the full set of Maxwells equations should be solved to address the EM effects. This paper gives an overview of the theory, simulation and experiments that have recently been carried out to understand these effects, which cause major uniformity problems in plasma processing for microelectronics and flat panel display industries. Furthermore, some methods for improving the plasma uniformity are also described and compared.  
  Address  
  Corporate Author Thesis  
  Publisher A v s amer inst physics Place of Publication Melville Editor  
  Language Wos 000355739500007 Publication Date 2015-02-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101;1520-8559; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 10 Open Access  
  Notes Approved (up) Most recent IF: 1.374; 2015 IF: 2.322  
  Call Number c:irua:123541 Serial 903  
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Author Zhang, Y.-R.; Gao, F.; Li, X.-C.; Bogaerts, A.; Wang, Y.-N. url  doi
openurl 
  Title Fluid simulation of the bias effect in inductive/capacitive discharges Type A1 Journal article
  Year 2015 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 33 Issue 33 Pages 061303  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitive discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0300V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120V at 2MHz and 90V at 27.12 MHz.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000365503800020 Publication Date 2015-08-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101;1520-8559; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 9 Open Access  
  Notes Approved (up) Most recent IF: 1.374; 2015 IF: 2.322  
  Call Number c:irua:126824 Serial 1229  
Permanent link to this record
 

 
Author Zhang, Y.-R.; Tinck, S.; De Schepper, P.; Wang, Y.-N.; Bogaerts, A. url  doi
openurl 
  Title Modeling and experimental investigation of the plasma uniformity in CF4/O2 capacitively coupled plasmas, operating in single frequency and dual frequency regime Type A1 Journal article
  Year 2015 Publication Journal of vacuum science and technology: A: vacuum surfaces and films Abbreviated Journal J Vac Sci Technol A  
  Volume 33 Issue 33 Pages 021310  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract A two-dimensional hybrid Monte Carlofluid model, incorporating a full-wave solution of Maxwell's equations, is employed to describe the behavior of high frequency (HF) and very high frequency capacitively coupled plasmas (CCPs), operating both at single frequency (SF) and dual frequency (DF) in a CF4/O2 gas mixture. First, the authors investigate the plasma composition, and the simulations reveal that besides CF4 and O2, also COF2, CF3, and CO2 are important neutral species, and CF+3 and F− are the most important positive and negative ions. Second, by comparing the results of the model with and without taking into account the electromagnetic effects for a SF CCP, it is clear that the electromagnetic effects are important, both at 27 and 60 MHz, because they affect the absolute values of the calculation results and also (to some extent) the spatial profiles, which accordingly affects the uniformity in plasma processing. In order to improve the plasma radial uniformity, which is important for the etch process, a low frequency (LF) source is added to the discharge. Therefore, in the major part of the paper, the plasma uniformity is investigated for both SF and DF CCPs, operating at a HF of 27 and 60 MHz and a LF of 2 MHz. For this purpose, the authors measure the etch rates as a function of position on the wafer in a wide range of LF powers, and the authors compare them with the calculated fluxes toward the wafer of the plasma species playing a role in the etch process, to explain the trends in the measured etch rate profiles. It is found that at a HF of 60 MHz, the uniformity of the etch rate is effectively improved by adding a LF power of 2 MHz and 300 W, while its absolute value increases by about 50%, thus a high etch rate with a uniform distribution is observed under this condition.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000355739500026 Publication Date 2015-01-29  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0734-2101;1520-8559; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.374 Times cited 3 Open Access  
  Notes Approved (up) Most recent IF: 1.374; 2015 IF: 2.322  
  Call Number c:irua:122650 Serial 2107  
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Author Ishikawa, K.; Karahashi, K.; Ichiki, T.; Chang, J.P.; George, S.M.; Kessels, W.M.M.; Lee, H.J.; Tinck, S.; Um, J.H.; Kinoshita, K. pdf  url
doi  openurl
  Title Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? Type A1 Journal article
  Year 2017 Publication Japanese journal of applied physics Abbreviated Journal Jpn J Appl Phys  
  Volume 56 Issue 56 Pages 06HA02  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000425887900001 Publication Date 2017-06-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-4922 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.384 Times cited 18 Open Access OpenAccess  
  Notes The authors would like to thank Drs. Masanobu Honda, Miyako Matsui, Tomohiro Okumura, Tetsuya Tatsumi, Satoshi Hamaguchi, Hiroto Ohtake, Yoshinobu Ohya, Kazunori Shinoda, Masaru Izawa, Hisataka Hayashi, Toshio Hayashi, Makoto Sekine, and Masaru Hori, and all members of the Program and Publication Committee of the 38th International Symposium on Dry Process 2016 held in Sapporo, Japan, as well as Nicholas Altieri and Jeffrey Chang at UCLA for proofreading and providing feedback on the manuscript. Approved (up) Most recent IF: 1.384  
  Call Number PLASMANT @ plasmant @ c:irua:143872 Serial 4576  
Permanent link to this record
 

 
Author Bogaerts, A.; Gijbels, R.; Goedheer, W. doi  openurl
  Title Hybrid modeling of a capacitively coupled radio frequency glow discharge in argon: combined Monte Carlo and fluid model Type A1 Journal article
  Year 1999 Publication Japanese journal of applied physics Abbreviated Journal Jpn J Appl Phys  
  Volume 38 Issue Pages 4404-4415  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Kyoto Editor  
  Language Wos 000082871400032 Publication Date 2002-10-01  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-4922;1347-4065; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.384 Times cited 45 Open Access  
  Notes Approved (up) Most recent IF: 1.384; 1999 IF: 1.411  
  Call Number UA @ lucian @ c:irua:24922 Serial 1523  
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