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  Author Title Year (down) Publication Volume Times cited Additional Links Links
Prabhakara, V.; Nuytten, T.; Bender, H.; Vandervorst, W.; Bals, S.; Verbeeck, J. Linearized radially polarized light for improved precision in strain measurements using micro-Raman spectroscopy 2021 Optics Express 29 2 UA library record; WoS full record; WoS citing articles pdf url doi
Mehta, A.N.; Gauquelin, N.; Nord, M.; Orekhov, A.; Bender, H.; Cerbu, D.; Verbeeck, J.; Vandervorst, W. Unravelling stacking order in epitaxial bilayer MX₂ using 4D-STEM with unsupervised learning 2020 Nanotechnology 31 13 UA library record; WoS full record; WoS citing articles pdf url doi
Khanam, A.; Vohra, A.; Slotte, J.; Makkonen, I.; Loo, R.; Pourtois, G.; Vandervorst, W. A demonstration of donor passivation through direct formation of V-As-i complexes in As-doped Ge1-XSnx 2020 Journal Of Applied Physics 127 UA library record; WoS full record; WoS citing articles url doi
Vohra, A.; Makkonen, I.; Pourtois, G.; Slotte, J.; Porret, C.; Rosseel, E.; Khanam, A.; Tirrito, M.; Douhard, B.; Loo, R.; Vandervorst, W. Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnx 2020 Ecs Journal Of Solid State Science And Technology 9 UA library record; WoS full record; WoS citing articles url doi
Mehta, A.N.; Mo, J.; Pourtois, G.; Dabral, A.; Groven, B.; Bender, H.; Favia, P.; Caymax, M.; Vandervorst, W. Grain-boundary-induced strain and distortion in epitaxial bilayer MoS₂ lattice 2020 Journal Of Physical Chemistry C 124 2 UA library record; WoS full record; WoS citing articles pdf doi
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Porret, C.; Loo, R.; Vandervorst, W. Heavily phosphorus doped germanium : strong interaction of phosphorus with vacancies and impact of tin alloying on doping activation 2019 Journal of applied physics 125 1 UA library record; WoS full record; WoS citing articles url doi
Dhayalan, S.K.; Nuytten, T.; Pourtois, G.; Simoen, E.; Pezzoli, F.; Cinquanta, E.; Bonera, E.; Loo, R.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Vandervorst, W. Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers 2019 ECS journal of solid state science and technology 8 UA library record; WoS full record pdf doi
Vohra, A.; Khanam, A.; Slotte, J.; Makkonen, I.; Pourtois, G.; Loo, R.; Vandervorst, W. Evolution of phosphorus-vacancy clusters in epitaxial germanium 2019 Journal of applied physics 125 5 UA library record; WoS full record; WoS citing articles pdf doi
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Loo, R.; Vandervorst, W. On the evolution of strain and electrical properties in as-grown and annealed Si:P epitaxial films for source-drain stressor applications 2018 ECS journal of solid state science and technology 7 4 UA library record; WoS full record; WoS citing articles url doi
Mehta, A.N.; Zhang, H.; Dabral, A.; Richard, O.; Favia, P.; Bender, H.; Delabie, A.; Caymax, M.; Houssa, M.; Pourtois, G.; Vandervorst, W. Structural characterization of SnS crystals formed by chemical vapour deposition 2017 Journal of microscopy T2 – 20th International Conference on Microscopy of Semiconducting Materials, (MSM), APR 09-13, 2017, Univ Oxford, Univ Oxford, Oxford, ENGLAND 268 2 UA library record; WoS full record; WoS citing articles pdf doi
Dutta, S.; Sankaran, K.; Moors, K.; Pourtois, G.; Van Elshocht, S.; Bommels, J.; Vandervorst, W.; Tokei, Z.; Adelmann, C. Thickness dependence of the resistivity of platinum-group metal thin films 2017 Journal of applied physics 122 42 UA library record; WoS full record; WoS citing articles doi
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films 2016 Applied physics letters 108 9 UA library record; WoS full record; WoS citing articles url doi
Martens, K.; Jeong, J.W.; Aetukuri, N.; Rettner, C.; Shukla, N.; Freeman, E.; Esfahani, D.N.; Peeters, F.M.; Topuria, T.; Rice, P.M.; Volodin, A.; Douhard, B.; Vandervorst, W.; Samant, M.G.; Datta, S.; Parkin, S.S.P. Field Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO(2) 2015 Physical review letters 115 28 UA library record; WoS full record; WoS citing articles url doi
Smets, Q.; Verreck, D.; Verhulst, A.S.; Rooyackers, R.; Merckling, C.; Van De Put, M.; Simoen, E.; Vandervorst, W.; Collaert, N.; Thean, V.Y.; Sorée, B.; Groeseneken, G.; Heyns, M.M.; InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models 2014 Journal of applied physics 115 34 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Sankaran, K.; Chen, Y.Y.; Fantini, A.; Celano, U.; Belmonte, A.; Zhang, L.; Goux, L.; Govoreanu, B.; Degraeve, R.; Wouters, D.J.; Jurczak, M.; Vandervorst, W.; Gendt, S.D.; Pourtois, G.; RRAMs based on anionic and cationic switching : a short overview 2014 Physica status solidi: rapid research letters 8 28 UA library record; WoS full record; WoS citing articles doi
Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates 2013 ECS solid state letters 2 12 UA library record; WoS full record; WoS citing articles url doi
Schulze, A.; Hantschel, T.; Dathe, A.; Eyben, P.; Ke, X.; Vandervorst, W. Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects 2012 Nanotechnology 23 29 UA library record; WoS full record; WoS citing articles pdf doi
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. Compositional characterization of nickel silicides by HAADF-STEM imaging 2011 Journal of materials science 46 1 UA library record; WoS full record; WoS citing articles doi
Verleysen, E.; Bender, H.; Richard, O.; Schryvers, D.; Vandervorst, W. Characterization of nickel silicides using EELS-based methods 2010 Journal of microscopy 240 11 UA library record; WoS full record; WoS citing articles doi
Ignatova, V.A.; Möller, W.; Conard, T.; Vandervorst, W.; Gijbels, R. Interpretation of TOF-SIMS depth profiles from ultrashallow high-k dielectric stacks assisted by hybrid collisional computer simulation 2005 Applied physics A : materials science & processing 81 4 UA library record; WoS full record; WoS citing articles doi
Ignatova, V.A.; Conard, T.; Möller, W.; Vandervorst, W.; Gijbels, R. Depth profiling of ZrO2/SiO2/Si stacks : a TOF-SIMS and computer simulation study 2004 Applied surface science 231/232 4 UA library record; WoS full record; WoS citing articles doi
de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks 2003 Applied surface science 203 15 UA library record; WoS full record; WoS citing articles doi
de Witte, H.; Vandervorst, W.; Gijbels, R. Modeling of bombardment induced oxidation of silicon 2001 Journal of applied physics 89 16 UA library record; WoS full record; WoS citing articles doi
de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding 2000 Surface and interface analysis 29 4 UA library record; WoS full record; WoS citing articles doi
de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on wafer surfaces 2000 Journal of the electrochemical society 147 14 UA library record; WoS full record; WoS citing articles doi
de Witte, H.; Conard, T.; Vandervorst, W.; Gijbels, R. Study of oxynitrides with dual beam TOF-SIMS 2000 UA library record
de Witte, H.; Conard, T.; Sporken, R.; Gouttebaron, R.; Magnee, R.; Vandervorst, W.; Caudano, R.; Gijbels, R. XPS study of ion induced oxidation of silicon with and without oxygen flooding 2000 UA library record
Conard, T.; de Witte, H.; Loo, R.; Verheyen, P.; Vandervorst, W.; Caymax, M.; Gijbels, R. XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers 1999 Thin solid films : an international journal on the science and technology of thin and thick films 343/344 1 UA library record; WoS full record; WoS citing articles doi
de Witte, H.; de Gendt, S.; Douglas, M.; Conard, T.; Kenis, K.; Mertens, P.W.; Vandervorst, W.; Gijbels, R. Capabilities of TOF-SIMS to study the influence of different oxidation conditions on metal contamination redistribution 1999 UA library record; WoS full record;
de Witte, H.; Vandervorst, W.; Gijbels, R. Modeling of bombardment induced oxidation of silicon with and without oxygen flooding 1998 UA library record
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