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Records |
Links |
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Author |
Zhao, C.X.; Xu, W.; Peeters, F.M. |
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Title |
Cerenkov emission of terahertz acoustic-phonons from graphene |
Type |
A1 Journal article |
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Year |
2013 |
Publication |
Applied physics letters |
Abbreviated Journal |
Appl Phys Lett |
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Volume |
102 |
Issue |
22 |
Pages |
222101-222104 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We present a theoretical study of the electrical generation of acoustic-phonon emission from graphene at room temperature. The drift velocity (v(x)) and temperature of electrons driven by dc electric field (F-x) are determined by solving self-consistently the momentum-and energy-balance equations derived from the Boltzmann equation. We find that in the presence of impurity, acoustic-and optic-phonon scattering, v(x) can be much larger than the longitudinal (v(l)) and transverse (v(t)) sound velocities in graphene even within the linear response regime. As a result, although the acoustic Cerenkov effect cannot be obviously seen in the analytical formulas, the enhanced acoustic-phonon emission can be observed with increasing F-x when v(x) > v(l) and v > v(t). The frequency of acoustic-phonon emission from graphene can be above 10 THz, which is much higher than that generated from conventional semiconductor systems. This study is pertinent to the application of graphene as hypersonic devices such as terahertz sound sources. (C) 2013 AIP Publishing LLC. |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000320621600034 |
Publication Date |
2013-06-03 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0003-6951; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.411 |
Times cited |
25 |
Open Access |
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Notes |
; This work was supported by the National Natural Science Foundation of China (Grant No. 10974206), Ministry of Science and Technology of China (Grant No. 2011YQ130018), Department of Science and Technology of Yunnan Province, and by the Chinese Academy of Sciences. ; |
Approved |
Most recent IF: 3.411; 2013 IF: 3.515 |
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Call Number |
UA @ lucian @ c:irua:109607 |
Serial |
305 |
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Permanent link to this record |
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Author |
Leadley, D.R.; Nicholas, R.J.; Singleton, J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; Perenboom, J.A.A.J.; van Bockstal, L.; Herlach, F.; Harris, J.J.; Foxon, C.T. |
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Title |
Collapse of high field magnetophonon resonance in GaAs-GaAlAs heterojunctions |
Type |
A1 Journal article |
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Year |
1994 |
Publication |
Physical review letters |
Abbreviated Journal |
Phys Rev Lett |
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Volume |
73 |
Issue |
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Pages |
589-592 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
A1994NZ23700021 |
Publication Date |
2002-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0031-9007; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
7.512 |
Times cited |
24 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:9278 |
Serial |
383 |
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Permanent link to this record |
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Author |
Yang, C.H.; Peeters, F.M.; Xu, W. |
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Title |
Density of states and magneto-optical conductivity of graphene in a perpendicular magnetic field |
Type |
A1 Journal article |
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Year |
2010 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
82 |
Issue |
20 |
Pages |
205428 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The density of states (DOS) and the optical conductivity of graphene is calculated in the presence of a perpendicular magnetic field and where scattering on charged and short-range impurities is included. The standard Kubo formula is employed where the self-energy induced by impurity scattering and the Green's function are calculated self-consistently including inter-Landau level (LL) coupling and screening effects. It is found that the scattering from those two types of impurities results in a symmetric LL broadening and asymmetric inter-LL coupling renormalizes the LL positions to lower energy. The peak position and intensity of the magneto-optical conductivity depends on the filling factor and the broadened DOS. Good agreement is found with recent cyclotron resonance measurements. |
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Corporate Author |
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Place of Publication |
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Wos |
000284400700003 |
Publication Date |
2010-11-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1098-0121;1550-235X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
39 |
Open Access |
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Notes |
; This work was supported by the National Natural Science Foundation of China under Grant No. 10804053, the Flemish Science Foundation (FWO-Vl), the Belgian Science Policy (IAP), and the Chinese Academy of Sciences and Department of Science and Technology of Yunnan Province. ; |
Approved |
Most recent IF: 3.836; 2010 IF: 3.774 |
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Call Number |
UA @ lucian @ c:irua:95543 |
Serial |
641 |
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Permanent link to this record |
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Author |
Xu, W.; Peeters, F.M.; Lu, T.C. |
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Title |
Dependence of resistivity on electron density and temperature in graphene |
Type |
A1 Journal article |
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Year |
2009 |
Publication |
Physical review : B : solid state |
Abbreviated Journal |
Phys Rev B |
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Volume |
79 |
Issue |
7 |
Pages |
073403,1-073403,4 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
On the basis of the momentum-balance equation derived from the Boltzmann equation in which electron interactions with impurities and acoustic and optic phonons are included, we examine the dependence of the resistivity in graphene on temperature and electron density. Simple analytical expressions for the different contributions to the resistivity are obtained. Our results reproduce recent experimental findings and we are able to understand the different temperature dependence of the resistivity for low and high density samples. |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lancaster, Pa |
Editor |
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Language |
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Wos |
000263815800013 |
Publication Date |
2009-02-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1098-0121;1550-235X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
31 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.836; 2009 IF: 3.475 |
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Call Number |
UA @ lucian @ c:irua:76222 |
Serial |
642 |
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Permanent link to this record |
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Author |
Xu, W.; Peeters, F.M.; Devreese, J.T.; Leadley, D.R.; Nicholas, R.J. |
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Title |
Destruction of magnetophonon resonance in high magnetic fields from impurity and phonon scattering in heterojunctions |
Type |
A1 Journal article |
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Year |
1996 |
Publication |
International journal of modern physics: B: condensed matter physics, statistical physics, applied physics |
Abbreviated Journal |
Int J Mod Phys B |
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Volume |
10 |
Issue |
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Pages |
169-202 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Singapore |
Editor |
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Language |
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Wos |
A1996TR56200002 |
Publication Date |
2004-10-12 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0217-9792;1793-6578; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
0.937 |
Times cited |
11 |
Open Access |
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Notes |
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Approved |
CHEMISTRY, PHYSICAL 54/144 Q2 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 9/35 Q2 # |
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Call Number |
UA @ lucian @ c:irua:15803 |
Serial |
664 |
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Permanent link to this record |
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Author |
Xu, W.; Leadley, D.R.; Peeters, F.M.; Devreese, J.T.; Nicholas, R.J.; Harris, J.J.; Foxon, C.T. |
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Title |
Destruction of magnetophonon resonance in high mobility heterojunctions from competition between elastic and inelastic scattering |
Type |
P3 Proceeding |
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Year |
1994 |
Publication |
Proceedings of the International Conference on the Physics of Semiconductors |
Abbreviated Journal |
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Volume |
22 |
Issue |
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Pages |
839-842 |
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Keywords |
P3 Proceeding; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
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Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
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ISBN |
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Additional Links |
UA library record |
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Impact Factor |
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Times cited |
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Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:9284 |
Serial |
665 |
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Permanent link to this record |
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Author |
Xu, W.; Peeters, F.M.; Devreese, J.T. |
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Title |
Diffusion-to-streaming transition in a two-dimensional electron system in a polar semiconductor |
Type |
A1 Journal article |
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Year |
1991 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
43 |
Issue |
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Pages |
14134-14141 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lancaster, Pa |
Editor |
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Language |
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Wos |
A1991FQ97400035 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1098-0121; 0163-1829 |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.736 |
Times cited |
24 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:913 |
Serial |
701 |
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Permanent link to this record |
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Author |
Leadley, D.R.; Nicholas, R.J.; Singleton, J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; van Bockstal, L.; Herlach, F.; Perenboom, J.A.A.J.; Harris, J.J.; Foxon, C.T. |
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Title |
Disappearance of magnetophonon resonance at high magnetic fields in GaAs-GaAlAs heterojunctions |
Type |
A1 Journal article |
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Year |
1994 |
Publication |
Surface science : a journal devoted to the physics and chemistry of interfaces |
Abbreviated Journal |
Surf Sci |
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Volume |
305 |
Issue |
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Pages |
327-331 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1994ND67400061 |
Publication Date |
2002-10-18 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0039-6028; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.925 |
Times cited |
1 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:9280 |
Serial |
728 |
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Permanent link to this record |
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Author |
Zhang, S.H.; Xu, W.; Peeters, F.M.; Badalyan, S.M. |
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Title |
Electron energy and temperature relaxation in graphene on a piezoelectric substrate |
Type |
A1 Journal article |
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Year |
2014 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
89 |
Issue |
19 |
Pages |
195409 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We study the energy and temperature relaxation of electrons in graphene on a piezoelectric substrate. Scattering from the combined potential of extrinsic piezoelectric surface acoustical (PA) phonons of the substrate and intrinsic deformation acoustical phonons of graphene is considered for a (non) degenerate gas of Dirac fermions. It is shown that in the regime of low energies or temperatures the PA phonons dominate the relaxation and change qualitatively its character. This prediction is relevant for quantum metrology and electronic applications using graphene devices and suggests an experimental setup for probing electron-phonon coupling in graphene. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000336000400008 |
Publication Date |
2014-05-09 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1098-0121;1550-235X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
18 |
Open Access |
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Notes |
; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Methusalem program of the Flemish government. ; |
Approved |
Most recent IF: 3.836; 2014 IF: 3.736 |
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Call Number |
UA @ lucian @ c:irua:117675 |
Serial |
928 |
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Permanent link to this record |
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Author |
Xu, W.; Peeters, F.M.; Devreese, J.T. |
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Title |
Electrophonon resonances in a quasi-two-dimensional electron system |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
48 |
Issue |
3 |
Pages |
1562-1570 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
When the energy difference between two electric subbands in a quasi-two-dimensional electron system equals a LO-phonon energy, resonant scattering will occur. This leads to an enhancement of the scattering rate and, consequently, to a suppression of the conductivity. Changing the energy difference between the electric subbands (e.g., through a gate) leads to a series of electrophonon resonances in the conductivity. A detailed study is made of this effect for different confinement potentials. We found that the scattering processes where the emission of a phonon is involved are very important for the electrophonon resonance and that the size of the effect decreases with increasing temperature. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lancaster, Pa |
Editor |
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Language |
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Wos |
A1993LP05000024 |
Publication Date |
2002-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0163-1829;1095-3795; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.736 |
Times cited |
45 |
Open Access |
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Notes |
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Approved |
no |
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Call Number |
UA @ lucian @ c:irua:5747 |
Serial |
1022 |
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Permanent link to this record |
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Author |
Leadley, D.R.; Nicholas, R.J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; Foxon, C.T.; Harris, J.J. |
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Title |
High-field magneto-resistance in GaAs-GaAlAs heterojunctions |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Physica: B : condensed matter |
Abbreviated Journal |
Physica B |
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Volume |
184 |
Issue |
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Pages |
197-201 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
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Wos |
A1993KU62100039 |
Publication Date |
2002-10-17 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0921-4526; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
1.319 |
Times cited |
4 |
Open Access |
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Notes |
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Approved |
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Call Number |
UA @ lucian @ c:irua:5746 |
Serial |
1428 |
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Permanent link to this record |
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Author |
Leadley, D.R.; Nicholas, R.J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; Singleton, J.; Perenboom, J.A.; van Bockstal, L.; Herlach, F.; Foxon, C.T.; Harris, J.J. |
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Title |
High-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scattering |
Type |
A1 Journal article |
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Year |
1993 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
48 |
Issue |
8 |
Pages |
5457-5468 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Lancaster, Pa |
Editor |
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Language |
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Wos |
A1993LV38500055 |
Publication Date |
2002-07-27 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0163-1829;1095-3795; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.736 |
Times cited |
22 |
Open Access |
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Notes |
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Approved |
CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 # |
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Call Number |
UA @ lucian @ c:irua:5750 |
Serial |
1430 |
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Permanent link to this record |
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Author |
Dong, H.M.; Xu, W.; Peeters, F.M. |
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Title |
High-field transport properties of graphene |
Type |
A1 Journal article |
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Year |
2011 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
110 |
Issue |
6 |
Pages |
063704,1-063704,6 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We present a theoretical investigation on the transport properties of graphene in the presence of high dc driving fields. Considering electron interactions with impurities and acoustic and optical phonons in graphene, we employ the momentum- and energy-balance equations derived from the Boltzmann equation to self-consistently evaluate the drift velocity and temperature of electrons in graphene in the linear and nonlinear response regimes. We find that the current-voltage relation exhibits distinctly nonlinear behavior, especially in the high electric field regime. Under the action of high-fields the large source-drain (sd) current density can be achieved and the current saturation in graphene is incomplete with increasing the sd voltage Vsd up to 3 V. Moreover, for high fields, Vsd>0.1 V, the heating of electrons in graphene occurs. It is shown that the sd current and electron temperature are sensitive to electron density and lattice temperature in the graphene device. This study is relevant to the application of graphene as high-field nano-electronic devices such as graphene field-effect transistors. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000295619300059 |
Publication Date |
2011-09-19 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0021-8979; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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|
Impact Factor |
2.068 |
Times cited |
17 |
Open Access |
|
|
|
Notes |
; This work was supported by the National Natural Science Foundation of China (Grant No. 10974206) and the Department of Science and Technology of Yunnan Province. ; |
Approved |
Most recent IF: 2.068; 2011 IF: 2.168 |
|
|
Call Number |
UA @ lucian @ c:irua:93614 |
Serial |
1433 |
|
Permanent link to this record |
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|
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Author |
Xu, W.; Peeters, F.M.; Devreese, J.T. |
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|
Title |
The hot electron distribution of two-dimensional electrons in a polar semiconductor at zero temperature |
Type |
A3 Journal article |
|
Year |
1991 |
Publication |
Journal of physics: C: condensed matter |
Abbreviated Journal |
|
|
|
Volume |
3 |
Issue |
|
Pages |
1783-1791 |
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Keywords |
A3 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
A1991FE35700009 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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|
Impact Factor |
|
Times cited |
1 |
Open Access |
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|
Notes |
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Approved |
no |
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|
Call Number |
UA @ lucian @ c:irua:948 |
Serial |
1490 |
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Permanent link to this record |
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Author |
Xiao, Y.M.; Xu, W.; Peeters, F.M. |
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Title |
Infrared to terahertz absorption window in mono- and multi-layer graphene systems |
Type |
A1 Journal article |
|
Year |
2014 |
Publication |
Optics communications |
Abbreviated Journal |
Opt Commun |
|
|
Volume |
328 |
Issue |
|
Pages |
135-142 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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|
Abstract |
We present a theoretical study on optical properties such as optical conductance and light transmission coefficient for mono- and multi-layer graphene systems with AB- and ABC-stacking. Considering an air/graphene/dielectric-water structure, the optical coefficients for those graphene systems are examined and compared. The universal optical conductance sigma(N)(0)=N pi e(2)/(2h) for N layer graphene systems in the visible region is verified. For N 3 layer graphene, the mini-gap induced absorption edges can be observed in odd layers AB-stacked multilayer graphene, where the number and position of the absorption edges are decided by the layers number N. Meanwhile, we can observe the optical absorption windows for those graphene systems in the infrared to terahertz bandwidth (0.2-150 THz). The absorption window is induced by different transition energies required for inter- and intra-band optical absorption channels. We find that the depth and width of the absorption window can be tuned not only via varying temperature and electron density but also by changing the number of graphene layers and the stacking order. These theoretical findings demonstrate that mono- and multi-layer graphene systems can be applied as frequency tunable optoelectronic devices working in infrared to terahertz bandwidth. (C) 2014 Elsevier B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Amsterdam |
Editor |
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Language |
|
Wos |
000336970000022 |
Publication Date |
2014-05-14 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0030-4018; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.588 |
Times cited |
7 |
Open Access |
|
|
|
Notes |
; This work was supported by the Ministry of Science and Technology of China (Grant no, 2011YQ130018), Department of Science and Technology of Yunnan Province, and by the Chinese Academy of Sciences. ; |
Approved |
Most recent IF: 1.588; 2014 IF: 1.449 |
|
|
Call Number |
UA @ lucian @ c:irua:118364 |
Serial |
1666 |
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Permanent link to this record |
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Author |
Li, L.L.; Xu, W.; Peeters, F.M. |
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|
Title |
Intrinsic optical anisotropy of [001]-grown short-period InAs/GaSb superlattices |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
|
|
Volume |
82 |
Issue |
23 |
Pages |
235422-235422,10 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We theoretically investigate the intrinsic optical anisotropy or polarization induced by the microscopic interface asymmetry (MIA) in no-common-atom (NCA) InAs/GaSb superlattices (SLs) grown along the [001] direction. The eight-band K⋅P model is used to calculate the electronic band structures and incorporates the MIA effect. A Boltzmann equation approach is employed to calculate the optical properties. We found that in NCA InAs/GaSb SLs, the MIA effect causes a large in-plane optical anisotropy for linearly polarized light and the largest anisotropy occurs for light polarized along the [110] and [11̅ 0] directions. The relative difference between the optical-absorption coefficient for [110]-polarized light and that for [11̅ 0]-polarized light is found to be larger than 50%. The dependence of the in-plane optical anisotropy on temperature, photoexcited carrier density, and layer width is examined in detail. This study is important for optical devices which require the polarization control and selectivity. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000286768800007 |
Publication Date |
2010-12-13 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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|
ISSN |
1098-0121;1550-235X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.836 |
Times cited |
18 |
Open Access |
|
|
|
Notes |
; This work was supported partly by the Flemish Science Foundation (FWO-VL), the Belgium Science Policy (IAP), the NSF of China (Grants No. 10664006, No. 10504036, and No. 90503005), Special Funds of 973 Project of China (Grant No. 2005CB623603), and Knowledge Innovation Program of the Chinese Academy of Sciences. ; |
Approved |
Most recent IF: 3.836; 2010 IF: 3.774 |
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|
Call Number |
UA @ lucian @ c:irua:88909 |
Serial |
1717 |
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Permanent link to this record |
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Author |
Yang, C.H.; Peeters, F.M.; Xu, W. |
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Title |
Landau-level broadening due to electron-impurity interaction in graphene in strong magnetic fields |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
82 |
Issue |
7 |
Pages |
075401:1-075401:6 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
The effect of electron-impurity and electron-electron interactions on the energy spectrum of electrons moving in graphene is investigated in the presence of a high magnetic field. We find that the width of the broadened Landau levels exhibits an approximate 1/B dependence near half filling for charged impurity scattering. The Landau-level width, the density of states, and the Fermi energy exhibit an oscillatory behavior as a function of magnetic field. Comparison with experiment shows that scattering with charged impurities cannot be the main scattering mechanism that determines the width of the Landau levels. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000280553700008 |
Publication Date |
2010-08-04 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
1098-0121;1550-235X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.836 |
Times cited |
38 |
Open Access |
|
|
|
Notes |
; This work was supported by the Flemish Science Foundation (FWO-Vl), the Belgian Science Policy (IAP), the National Science Foundation of China under Grant No. 10804053, the Foundation of NUIST under Grant No. S8108062001, and the Chinese Academy of Sciences and Department of Science and Technology of Yunnan Province. ; |
Approved |
Most recent IF: 3.836; 2010 IF: 3.774 |
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|
Call Number |
UA @ lucian @ c:irua:84043 |
Serial |
1769 |
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Permanent link to this record |
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Author |
Xu, W.; Vasilopoulos, P.; Das, M.P.; Peeters, F.M. |
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Title |
The low-temperature self-consistent g factor for heterostructures in strong magnetic fields |
Type |
A1 Journal article |
|
Year |
1995 |
Publication |
Journal of physics : condensed matter |
Abbreviated Journal |
J Phys-Condens Mat |
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Volume |
7 |
Issue |
|
Pages |
4419-4432 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1995RC23600011 |
Publication Date |
0000-00-00 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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|
ISSN |
0953-8984 |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.346 |
Times cited |
20 |
Open Access |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:12196 |
Serial |
1853 |
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Permanent link to this record |
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Author |
Xu, W.; Peeters, F.M.; Devreese, J.T. |
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Title |
Normal and hot electro-phonon resonance effect in a quasi-two-dimensional semiconductor system |
Type |
A1 Journal article |
|
Year |
1993 |
Publication |
Journal of physics : condensed matter |
Abbreviated Journal |
J Phys-Condens Mat |
|
|
Volume |
5 |
Issue |
15 |
Pages |
2307-2320 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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|
Abstract |
The electro-phonon resonance effect is a consequence of a resonant interaction between two electric subbands mediated by an optical phonon. It occurs in a quasi-two-dimensional electron system each time the energy difference between two electric subbands equals the energy of a Lo phonon. We study the influence of this effect on the electron mobility by using the momentum balance equation. The temperature and electron density dependences of the resonances are studied in the linear and non-linear response regimes. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
London |
Editor |
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Language |
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Wos |
A1993KX70100004 |
Publication Date |
2002-08-25 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0953-8984;1361-648X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
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|
Impact Factor |
2.346 |
Times cited |
18 |
Open Access |
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Notes |
|
Approved |
no |
|
|
Call Number |
UA @ lucian @ c:irua:102984 |
Serial |
2367 |
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Permanent link to this record |
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Author |
Dhong, H.M.; Zhang, J.; Peeters, F.M.; Xu, W. |
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Title |
Optical conductance and transmission in bilayer graphene |
Type |
A1 Journal article |
|
Year |
2009 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
106 |
Issue |
4 |
Pages |
043103,1-043103,6 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We present a theoretical study of the optoelectronic properties of bilayer graphene. The optical conductance and transmission coefficient are calculated using the energy-balance equation derived from a Boltzmann equation for an air/graphene/dielectric-wafer system. For short wavelengths (<0.2 µm), we obtain the universal optical conductance =e2/(2). Interestingly, there exists an optical absorption window in the wavelength range 10100 µm, which is induced by different transition energies required for inter- and intra-band optical absorptions in the presence of the MossBurstein effect. As a result, the position and width of this absorption window depend sensitively on temperature, carrier density, and sample mobility of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000270083800004 |
Publication Date |
2009-08-20 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
|
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ISSN |
0021-8979; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
11 |
Open Access |
|
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|
Notes |
|
Approved |
Most recent IF: 2.068; 2009 IF: 2.072 |
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|
Call Number |
UA @ lucian @ c:irua:79315 |
Serial |
2472 |
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Permanent link to this record |
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Author |
Li, L.L.; Xu, W.; Peeters, F.M. |
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Title |
Optical conductivity of topological insulator thin films |
Type |
A1 Journal article |
|
Year |
2015 |
Publication |
Journal of applied physics |
Abbreviated Journal |
J Appl Phys |
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Volume |
117 |
Issue |
117 |
Pages |
175305 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We present a detailed theoretical study on the optoelectronic properties of topological insulator thin film (TITFs). The k . p approach is employed to calculate the energy spectra and wave functions for both the bulk and surface states in the TITF. With these obtained results, the optical conductivities induced by different electronic transitions among the bulk and surface states are evaluated using the energy-balance equation derived from the Boltzmann equation. We find that for Bi2Se3-based TITFs, three characteristic regimes for the optical absorption can be observed. (i) In the low radiation frequency regime (photon energy (h) over bar omega < 200 meV), the free-carrier absorption takes place due to intraband electronic transitions. An optical absorption window can be observed. (ii) In the intermediate radiation frequency regime (200 < (h) over bar omega < 300 meV), the optical absorption is induced mainly by interband electronic transitions from surface states in the valance band to surface states in the conduction band and an universal value sigma(0) = e(2) / (8<(h)over bar>) for the optical conductivity can be obtained. (iii) In the high radiation frequency regime ((h) over bar omega > 300 meV), the optical absorption can be achieved via interband electronic transitions from bulk and surface states in the valance band to bulk and surface states in the conduction band. A strong absorption peak can be observed. These interesting findings indicate that optical measurements can be applied to identify the energy regimes of bulk and surface states in the TITF. (C) 2015 AIP Publishing LLC. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
American Institute of Physics |
Place of Publication |
New York, N.Y. |
Editor |
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Language |
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Wos |
000354984100615 |
Publication Date |
2015-05-06 |
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Series Editor |
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Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
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ISSN |
0021-8979;1089-7550; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.068 |
Times cited |
9 |
Open Access |
|
|
|
Notes |
; This work was supported by the National Natural Science Foundation of China (Grant No. 11304316), Ministry of Science and Technology of China (Grant No. 2011YQ130018), Department of Science and Technology of Yunnan Province, and by the Chinese Academy of Sciences. ; |
Approved |
Most recent IF: 2.068; 2015 IF: 2.183 |
|
|
Call Number |
c:irua:126412 |
Serial |
2473 |
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Permanent link to this record |
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Author |
Xiao, Y.M.; Xu, W.; Zhang, Y.Y.; Peeters, F.M. |
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Title |
Optoelectronic properties of ABC-stacked trilayer graphene |
Type |
A1 Journal article |
|
Year |
2013 |
Publication |
Physica status solidi: B: basic research |
Abbreviated Journal |
Phys Status Solidi B |
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|
Volume |
250 |
Issue |
1 |
Pages |
86-94 |
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|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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|
Abstract |
We present a theoretical study on the optoelectronic properties of ABC-stacked trilayer graphene (TLG). The optical conductance and light transmittance are evaluated through using the energy-balance equation derived from the Boltzmann equation for an air/graphene/dielectric-wafer system in the presence of linearly polarized radiation field. The results obtained from two band structure models are examined and compared. For short wavelength radiation, the universal optical conductance sigma(0) = 3e(2)/(4h) can be obtained. Importantly, there exists an optical absorption window in the radiation wavelength range 10-200 mu m, which is induced by different transition energies required for inter- and intra-band optical absorption channels. As a result, we find that the position and width of this window depend sensitively on temperature and carrier density of the system, especially the lower frequency edge. There is a small characteristic absorption peak at about 82 mu m where the largest interband transition states exist in the ABC-stacked TLG model, in contrast to the relatively smooth curves in a simplified model. These theoretical results indicate that TLG has some interesting and important physical properties which can be utilized to realize infrared or THz optoelectronic devices. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
Berlin |
Editor |
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Language |
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Wos |
000313347500011 |
Publication Date |
2012-08-08 |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
|
Series Issue |
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Edition |
|
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|
ISSN |
0370-1972; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
1.674 |
Times cited |
6 |
Open Access |
|
|
|
Notes |
; This work was supported by the National Natural Science Foundation of China (grant no. 10974206), Department of Science and Technology of Yunnan Province, and by the Chinese Academy of Sciences. One of us (F.M.P.) was a Specially Appointed Foreign Professor of the Chinese Academy of Sciences. ; |
Approved |
Most recent IF: 1.674; 2013 IF: 1.605 |
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|
Call Number |
UA @ lucian @ c:irua:110109 |
Serial |
2495 |
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Permanent link to this record |
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Author |
Xu, W.; Dong, H.M.; Li, L.L.; Yao, J.Q.; Vasilopoulos, P.; Peeters, F.M. |
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Title |
Optoelectronic properties of graphene in the presence of optical phonon scattering |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
|
|
Volume |
82 |
Issue |
12 |
Pages |
125304-125304,9 |
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|
Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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|
Abstract |
We study in detail the optoelectronic properties of graphene. Considering the electron interactions with photons and phonons, we employ the mass- and energy-balance equations to self-consistently evaluate the photoinduced carrier densities, the optical conductance, and the transmission coefficient in the presence of a linearly polarized radiation field. We demonstrate that the photoinduced carrier densities increase around the electron-photon-phonon resonant transition. They depend strongly on the radiation intensity and frequency, temperature, and dark carrier density. For short-wavelength radiation (L<3 μm), we obtain the universal optical conductance σ0=e2/(4ℏ). Importantly, there exists an optical-absorption window in the radiation wavelength range 4100 μm, which is induced by different transition energies required for interband and intraband optical absorption. The position and width of this window depend sensitively on the temperature and the carrier density of the system. These theoretical results are in line with recent experimental findings and indicate that graphene exhibits important features not only in the visible regime but also in the midinfrared bandwidth. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
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Place of Publication |
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Editor |
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Language |
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Wos |
000281516500009 |
Publication Date |
2010-09-03 |
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Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1098-0121;1550-235X; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
3.836 |
Times cited |
28 |
Open Access |
|
|
|
Notes |
; This work was supported by the Chinese Academy of Sciences, National Natural Science Foundation of China, and Department of Science and Technology of Yunnan Province. ; |
Approved |
Most recent IF: 3.836; 2010 IF: 3.774 |
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|
Call Number |
UA @ lucian @ c:irua:84260 |
Serial |
2496 |
|
Permanent link to this record |
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Author |
Dong, H.M.; Xu, W.; Zhang, J.; Peeters, F.M.; Vasilopoulos, P. |
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Title |
Photo-excited carriers and optical conductance and transmission in graphene in the presence of phonon scattering |
Type |
A1 Journal article |
|
Year |
2010 |
Publication |
Physica. E: Low-dimensional systems and nanostructures |
Abbreviated Journal |
Physica E |
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Volume |
42 |
Issue |
4 |
Pages |
748-750 |
|
|
Keywords |
A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT) |
|
|
Abstract |
We present a theoretical study of the optoelectronic properties of monolayer graphene. Including the effect of the electron-photon-phonon scattering, we employ the mass- and energy-balance equations derived from the Boltzmann equation to evaluate self-consistently the carrier densities, optical conductance and transmission coefficient in graphene in the presence of linearly polarized radiation field. We find that the photo-excited carrier density can be increased under infrared radiation and depend strongly on radiation intensity and frequency. For short wavelengths (lambda <3 mu m), the universal optical conductance sigma(0) = e(2)/4h is obtained and the light transmittance is about 0.97-0.98. Interestingly, there is an optical absorption window in the range 4-100 mu m which is induced by different transition energies required for inter- and intra-band optical absorption. The position and width of this absorption window depend sensitively on temperature and carrier density of the system. These results are relevant for applications of recently developed graphene devices in advanced optoelectronics such as the infrared photodetectors. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved. |
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Address |
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Corporate Author |
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Thesis |
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Publisher |
North-Holland |
Place of Publication |
Amsterdam |
Editor |
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Language |
|
Wos |
000276541200022 |
Publication Date |
2009-11-25 |
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
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Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1386-9477; |
ISBN |
|
Additional Links |
UA library record; WoS full record; WoS citing articles |
|
|
Impact Factor |
2.221 |
Times cited |
7 |
Open Access |
|
|
|
Notes |
; ; |
Approved |
Most recent IF: 2.221; 2010 IF: 1.304 |
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Call Number |
UA @ lucian @ c:irua:99216 |
Serial |
2607 |
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Permanent link to this record |
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Author |
Zhang, S.H.; Xu, W.; Badalyan, S.M.; Peeters, F.M. |
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Title |
Piezoelectric surface acoustical phonon limited mobility of electrons in graphene on a GaAs substrate |
Type |
A1 Journal article |
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Year |
2013 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
87 |
Issue |
7 |
Pages |
075443-75445 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We study the mobility of Dirac fermions in monolayer graphene on a GaAs substrate, limited by the combined action of the extrinsic potential of piezoelectric surface acoustical phonons of GaAs (PA) and of the intrinsic deformation potential of acoustical phonons in graphene (DA). In the high-temperature (T) regime, the momentum relaxation rate exhibits the same linear dependence on T but different dependencies on the carrier density n, corresponding to the mobility mu proportional to 1 root n and 1/n, respectively for the PA and DA scattering mechanisms. In the low-T Bloch-Gruneisen regime, the mobility shows the same square-root density dependence mu proportional to root n, but different temperature dependencies mu proportional to T-3 and T-4, respectively for PA and DA phonon scattering. DOI: 10.1103/PhysRevB.87.075443 |
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Wos |
000315375200008 |
Publication Date |
2013-02-27 |
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Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1098-0121;1550-235X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
25 |
Open Access |
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Notes |
; This work was supported by the ESF-Eurocores program EuroGRAPHENE (CONGRAN project) and the Flemish Science Foundation (FWO-VI). ; |
Approved |
Most recent IF: 3.836; 2013 IF: 3.664 |
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Call Number |
UA @ lucian @ c:irua:107655 |
Serial |
2622 |
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Permanent link to this record |
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Author |
Zhao, C.X.; Xu, W.; Dong, H.M.; Peeters, F.M. |
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Title |
Plasmon and coupled plasmon-phonon modes in graphene in the presence of a driving electric field |
Type |
A1 Journal article |
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Year |
2014 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
89 |
Issue |
19 |
Pages |
195447 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Abstract |
We present a theoretical study of the plasmon and coupled plasmon-phonon modes induced by intraband electron-electron interaction in graphene in the presence of driving dc electric field. We find that the electric field dependence of these collective excitation modes in graphene differs significantly from that in a conventional two-dimensional electron gas with a parabolic energy spectrum. This is due mainly to the fact that graphene has a linear energy spectrum and the Fermi velocity of electrons in graphene is much larger than the drift velocity of electrons. The obtained results demonstrate that the plasmon and coupled plasmon-phonon modes in graphene can be tuned by applying not only the gate voltage but also the source-to-drain field. The manipulation of plasmon and coupled plasmon-phonon modes by source-to-drain voltage can let graphene be more conveniently applied as an advanced plasmonic material. |
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Wos |
000336841000007 |
Publication Date |
2014-05-29 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1098-0121;1550-235X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
9 |
Open Access |
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Notes |
; This work was supported by the Ministry of Science and Technology of China (Grant No. 2011YQ130018), the Department of Science and Technology of Yunnan Province, the Chinese Academy of Sciences, and by the National Natural Science Foundation of China (Grant No. 11247002). ; |
Approved |
Most recent IF: 3.836; 2014 IF: 3.736 |
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Call Number |
UA @ lucian @ c:irua:117764 |
Serial |
2642 |
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Permanent link to this record |
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Author |
Dong, H.M.; Xu, W.; Zeng, Z.; Lu, T.C.; Peeters, F.M. |
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Title |
Quantum and transport conductivities in monolayer graphene |
Type |
A1 Journal article |
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Year |
2008 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
77 |
Issue |
23 |
Pages |
235402,1-9 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT) |
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Place of Publication |
Lancaster, Pa |
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Wos |
000257289500092 |
Publication Date |
2008-06-03 |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1098-0121;1550-235X; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.836 |
Times cited |
31 |
Open Access |
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Notes |
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Approved |
Most recent IF: 3.836; 2008 IF: 3.322 |
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Call Number |
UA @ lucian @ c:irua:69637 |
Serial |
2771 |
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Permanent link to this record |
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Author |
Xu, W.; Vasilopoulos, P.; Das, M.P.; Peeters, F.M. |
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Title |
Self-consistent g* factor and spin-split Landau levels in strong magnetic fields and at low temperatures |
Type |
P3 Proceeding |
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Year |
1995 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
743-746 |
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Keywords |
P3 Proceeding; Condensed Matter Theory (CMT) |
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Publisher |
World Scientific |
Place of Publication |
Singapore |
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Publication Date |
0000-00-00 |
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Additional Links |
UA library record |
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Approved |
MATERIALS SCIENCE, MULTIDISCIPLINARY 96/271 Q2 # |
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Call Number |
UA @ lucian @ c:irua:12203 |
Serial |
2974 |
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Permanent link to this record |
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Author |
Xu, W.; Peeters, F.M.; Devreese, J.T. |
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Title |
Streaming-to-accumulation transition in a 2-dimensional electron-system in a polar semiconductor |
Type |
A1 Journal article |
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Year |
1992 |
Publication |
Physical review : B : condensed matter and materials physics |
Abbreviated Journal |
Phys Rev B |
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Volume |
46 |
Issue |
12 |
Pages |
7571-7580 |
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Keywords |
A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems |
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Abstract |
Hot-electron transport is studied for a two-dimensional electron gas coupled to longitudinal-optical phonons in crossed electric and magnetic fields. At low electric and high magnetic fields the electrons are accumulated, while at high electric fields they are in a streaming state. We develop a streaming-to-accumulation transition model and compare the results with that from a Monte Carlo simulation. |
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Place of Publication |
Lancaster, Pa |
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Wos |
A1992JQ37800028 |
Publication Date |
2002-07-27 |
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ISSN |
0163-1829;1095-3795; |
ISBN |
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Additional Links |
UA library record; WoS full record; WoS citing articles |
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Impact Factor |
3.736 |
Times cited |
13 |
Open Access |
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Notes |
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Approved |
PHYSICS, APPLIED 28/145 Q1 # |
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Call Number |
UA @ lucian @ c:irua:103023 |
Serial |
3174 |
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Author |
Dong, H.M.; Qin, H.; Zhang, J.; Peeters, F.M.; Xu, W. |
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Title |
Terahertz absorption window in bilayer graphene |
Type |
H1 Book chapter |
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Year |
2009 |
Publication |
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Abbreviated Journal |
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Volume |
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Issue |
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Pages |
247-248 |
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Keywords |
H1 Book chapter; Condensed Matter Theory (CMT) |
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Abstract |
We present a detailed theoretical study of terahertz (THz) optical absorption in bilayer graphene. Considering an air/graphene/dielectric-wafer system, we find that there is an absorption window in the range 3 similar to 30 THz. Such an absorption window is induced by different transition energies required for inter- and intra-band optical absorption in the presence of the Pauli blockade effect. As a result, the position and width of this THz absorption window depend sensitively on temperature and carrier density of the system. These results are pertinent to the applications of recently developed graphene systems as novel optoelectronic devices such as THz photo-detectors. |
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Publisher |
Ieee |
Place of Publication |
New York, N.Y. |
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Publication Date |
0000-00-00 |
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ISBN |
978-1-4244-5416-7 |
Additional Links |
UA library record; WoS full record; |
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Impact Factor |
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Open Access |
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Notes |
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Approved |
Most recent IF: NA |
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Call Number |
UA @ lucian @ c:irua:99225 |
Serial |
3506 |
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Permanent link to this record |