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  Author Title Year Publication Volume Times cited Additional Links Links
Masir, M.R.; Vasilopoulos, P.; Peeters, F.M. Wavevector filtering through single-layer and bilayer graphene with magnetic barrier structures 2008 Applied physics letters 93 91 UA library record; WoS full record; WoS citing articles url doi
Bals, S.; Van Tendeloo, G.; Salluzzo, M.; Maggio-Aprile, I. Why are sputter deposited Nd1+xBa2-xCu3O7-\delta thin films flatter than NdBa2Cu3O7-\delta films? 2001 Applied physics letters 79 13 UA library record; WoS full record; WoS citing articles pdf doi
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. Zener tunneling in semiconductors under nonuniform electric fields 2010 Journal of applied physics 107 22 UA library record; WoS full record; WoS citing articles doi
Homm, P.; Dillemans, L.; Menghini, M.; Van Bilzen, B.; Bakalov, P.; Su, C.Y.; Lieten, R.; Houssa, M.; Nasr Esfahani, D.; Covaci, L.; Peeters, F.M.; Seo, J.W.; Locquet, J.P.; Collapse of the low temperature insulating state in Cr-doped V2O3 thin films 2015 Applied physics letters 107 14 UA library record; WoS full record; WoS citing articles url doi
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors 2016 Applied physics letters 108 13 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Chen, Y.Y.; Chen, C.Y.; Goux, L.; Govoreanu, B.; Degraeve, R.; Fantini, A.; Jurczak, M.; Pourtois, G. First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device 2016 Journal of applied physics 119 17 UA library record; WoS full record; WoS citing articles url doi
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors 2015 Journal of applied physics 118 9 UA library record; WoS full record; WoS citing articles doi
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. Inter-ribbon tunneling in graphene: An atomistic Bardeen approach 2016 Journal of applied physics 119 6 UA library record; WoS full record; WoS citing articles url doi
Moors, K.; Sorée, B.; Magnus, W. Modeling surface roughness scattering in metallic nanowires 2015 Journal of applied physics 118 11 UA library record; WoS full record; WoS citing articles url doi
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films 2016 Applied physics letters 108 9 UA library record; WoS full record; WoS citing articles url doi
Yagmurcukardes, M.; Sahin, H.; Kang, J.; Torun, E.; Peeters, F.M.; Senger, R.T. Pentagonal monolayer crystals of carbon, boron nitride, and silver azide 2015 Journal of applied physics 118 79 UA library record; WoS full record; WoS citing articles doi
de Sousa, A.A.; Chaves, A.; Pereira, T.A.S.; Farias, G.A.; Peeters, F.M. Quantum tunneling between bent semiconductor nanowires 2015 Journal of applied physics 118 7 UA library record; WoS full record; WoS citing articles doi
Andrikopoulos, D.; Sorée, B.; De Boeck, J. Skyrmion-induced bound states on the surface of three-dimensional topological insulators 2016 Journal of applied physics 119 8 UA library record; WoS full record; WoS citing articles url doi
Frota, D.A.; Chaves, A.; Ferreira, W.P.; Farias, G.A.; Milošević, M.V. Superconductor-ferromagnet bilayer under external drive : the role of vortex-antivortex matter 2016 Journal of applied physics 119 4 UA library record; WoS full record; WoS citing articles doi
Fatima; Oguz, I.C.; Çakir, D.; Hossain, S.; Mohottige, R.; Gulseren, O.; Oncel, N. On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface 2016 Journal of applied physics 120 7 UA library record; WoS full record; WoS citing articles url doi
Balasubramaniam, Y.; Pobedinskas, P.; Janssens, S.D.; Sakr, G.; Jomard, F.; Turner, S.; Lu, Y.G.; Dexters, W.; Soltani, A.; Verbeeck, J.; Barjon, J.; Nesládek, M.; Haenen, K.; Thick homoepitaxial (110)-oriented phosphorus-doped n-type diamond 2016 Applied physics letters 109 20 UA library record; WoS full record; WoS citing articles doi
Milovanović, S.P.; Peeters, F.M. Strain controlled valley filtering in multi-terminal graphene structures 2016 Applied physics letters 109 50 UA library record; WoS full record; WoS citing articles doi
Leenaerts, O.; Vercauteren, S.; Partoens, B. Band alignment of lateral two-dimensional heterostructures with a transverse dipole 2017 Applied physics letters 110 4 UA library record; WoS full record; WoS citing articles url doi
Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. Can p-channel tunnel field-effect transistors perform as good as n-channel? 2014 Applied physics letters 105 8 UA library record; WoS full record; WoS citing articles url doi
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides 2016 Journal of applied physics 120 6 UA library record; WoS full record; WoS citing articles url doi
Lindell, L.; Çakir, D.; Brocks, G.; Fahlman, M.; Braun, S. Role of intrinsic molecular dipole in energy level alignment at organic interfaces 2013 Applied Physics Letters 102 22 UA library record; WoS full record; WoS citing articles url doi
Torun, E.; Sahin, H.; Cahangirov, S.; Rubio, A.; Peeters, F.M. Anisotropic electronic, mechanical, and optical properties of monolayer WTe2 2016 Journal of applied physics 119 62 UA library record; WoS full record; WoS citing articles url doi
Lu, A.K.A.; Pourtois, G.; Agarwal, T.; Afzalian, A.; Radu, I.P.; Houssa, M. Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study 2016 Applied physics letters 108 4 UA library record; WoS full record; WoS citing articles doi
Volodin, A.; Van Haesendonck, C.; Leenaerts, O.; Partoens, B.; Peeters, F.M. Stress dependence of the suspended graphene work function : vacuum Kelvin probe force microscopy and density functional theory 2017 Applied physics letters 110 8 UA library record; WoS full record; WoS citing articles pdf doi
Jones, E.; Cooper, D.; Rouvière, J.-L.; Béché, A.; Azize, M.; Palacios, T.; Gradecak, S. Towards rapid nanoscale measurement of strain in III-nitride heterostructures 2013 Applied Physics Letters 103 6 UA library record; WoS full record; WoS citing articles doi
Cooper, D.; Rouvière, J.-L.; Béché, A.; Kadkhodazadeh, S.; Semenova, E.S.; Dunin-Borkowsk, R. Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography 2011 Applied physics letters 99 26 UA library record; WoS full record; WoS citing articles doi
Cooper, D.; Le Royer, C.; Béché, A.; Rouvière, J.-L. Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy 2012 Applied Physics Letters 100 UA library record; WoS full record; WoS citing articles doi
Cooper, D.; Denneulin, T.; Barnes, J.-P.; Hartmann, J.-M.; Hutin, L.; Le Royer, C.; Béché, A.; Rouvière, J.-L. Strain mapping with nm-scale resolution for the silicon-on-insulator generation of semiconductor devices by advanced electron microscopy 2012 Applied Physics Letters 112 14 UA library record; WoS full record; WoS citing articles doi
Berdiyorov, G.R.; Mortazavi, B.; Ahzi, S.; Peeters, F.M.; Khraisheh, M.K. Effect of straining graphene on nanopore creation using Si cluster bombardment: A reactive atomistic investigation 2016 Journal of applied physics 120 10 UA library record; WoS full record; WoS citing articles url doi
Rouvière, J.-L.; Béché, A.; Martin, Y.; Denneulin, T.; Cooper, D. Improved strain precision with high spatial resolution using nanobeam precession electron diffraction 2013 Applied physics letters 103 53 UA library record; WoS full record; WoS citing articles doi
Select All    Deselect All << 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 >> [101–200]
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