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Author Bals, S.; Van Tendeloo, G.; Salluzzo, M.; Maggio-Aprile, I. pdf  doi
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  Title Why are sputter deposited Nd1+xBa2-xCu3O7-\delta thin films flatter than NdBa2Cu3O7-\delta films? Type A1 Journal article
  Year (down) 2001 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 79 Issue 22 Pages 3660-3662  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract High-resolution electron microscopy and scanning tunneling microscopy have been used to compare the microstructure of NdBa2Cu3O7-delta and Nd1+xBa2-xCu3O7-delta thin films. Both films contain comparable amounts of Nd2CuO4 inclusions. Antiphase boundaries are induced by unit cell high steps at the substrate or by a different interface stacking. In Nd1+xBa2-xCu3O7-delta the antiphase boundaries tend to annihilate by the insertion of extra Nd layers. Stacking faults, which can be characterized as local Nd2Ba2Cu4O9 inclusions, also absorb the excess Nd. A correlation is made between the excess Nd and the absence of growth spirals at the surface of the Nd-rich films. (C) 2001 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000172204400034 Publication Date 2002-07-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.411; 2001 IF: 3.849  
  Call Number UA @ lucian @ c:irua:54801 Serial 3916  
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