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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links |
Links |
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Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. |
Quantum mechanical solver for confined heterostructure tunnel field-effect transistors |
2014 |
Journal of applied physics |
115 |
15 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor |
2004 |
Journal of applied physics |
96 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field effect transistor |
2003 |
Journal of applied physics |
93 |
16 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. |
Resistivity scaling and electron relaxation times in metallic nanowires |
2014 |
Journal of applied physics |
116 |
17 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. |
Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation |
2014 |
Journal of applied physics |
115 |
26 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. |
Zener tunneling in semiconductors under nonuniform electric fields |
2010 |
Journal of applied physics |
107 |
22 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Agarwal, T.; Sorée, B.; Radu, I.; Raghavan, P.; Fiori, G.; Iannaccone, G.; Thean, A.; Heyns, M.; Dehaene, W. |
Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors |
2016 |
Applied physics letters |
108 |
13 |
UA library record; WoS full record; WoS citing articles |
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|
|
Verreck, D.; Verhulst, A.S.; Van de Put, M.; Sorée, B.; Magnus, W.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. |
Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors |
2015 |
Journal of applied physics |
118 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Van de Put, M.L.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Inter-ribbon tunneling in graphene: An atomistic Bardeen approach |
2016 |
Journal of applied physics |
119 |
6 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Moors, K.; Sorée, B.; Magnus, W. |
Modeling surface roughness scattering in metallic nanowires |
2015 |
Journal of applied physics |
118 |
11 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Andrikopoulos, D.; Sorée, B.; De Boeck, J. |
Skyrmion-induced bound states on the surface of three-dimensional topological insulators |
2016 |
Journal of applied physics |
119 |
8 |
UA library record; WoS full record; WoS citing articles |
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Verhulst, A.S.; Verreck, D.; Pourghaderi, M.A.; Van de Put, M.; Sorée, B.; Groeseneken, G.; Collaert, N.; Thean, A.V.-Y. |
Can p-channel tunnel field-effect transistors perform as good as n-channel? |
2014 |
Applied physics letters |
105 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Mohammed, M.; Verhulst, A.S.; Verreck, D.; Van de Put, M.; Simoen, E.; Sorée, B.; Kaczer, B.; Degraeve, R.; Mocuta, A.; Collaert, N.; Thean, A.; Groeseneken, G. |
Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides |
2016 |
Journal of applied physics |
120 |
6 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Beckers, A.; Thewissen, M.; Sorée, B. |
Energy filtering in silicon nanowires and nanosheets using a geometric superlattice and its use for steep-slope transistors |
2018 |
Journal of applied physics |
124 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
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Zografos, O.; Dutta, S.; Manfrini, M.; Vaysset, A.; Sorée, B.; Naeemi, A.; Raghavan, P.; Lauwereins, R.; Radu, I.P. |
Non-volatile spin wave majority gate at the nanoscale |
2017 |
AIP advances
T2 – 61st Annual Conference on Magnetism and Magnetic Materials (MMM), OCT 31-NOV 04, 2016, New Orleans, LA |
7 |
13 |
UA library record; WoS full record; WoS citing articles |
|
|
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Van de Put, M.L.; Vandenberghe, W.G.; Magnus, W.; Sorée, B. |
An envelope function formalism for lattice-matched heterostructures |
2015 |
Physica: B : condensed matter |
470-471 |
5 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Lujan, G.S.; Magnus, W.; Sorée, B.; Ragnarsson, L.A.; Trojman, L.; Kubicek, S.; De Gendt, S.; Heyns, A.; De Meyer, K. |
Barrier permeation effects on the inversion layer subband structure and its applications to the electron mobility |
2005 |
Microelectronic engineering |
80 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current |
2011 |
Solid state electronics |
65-66 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. |
Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference |
2008 |
Physical review : B : condensed matter and materials physics |
77 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Direct and indirect band-to-band tunneling in germanium-based TFETs |
2012 |
IEEE transactions on electron devices |
59 |
212 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. |
First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts |
2005 |
Microelectronic engineering |
80 |
31 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; de Meyer, K.; Meuris, M.; Heyns, M. |
General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors |
2008 |
Journal of computational electronics |
7 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Cantoro, M.; Klekachev, A.V.; Nourbakhsh, A.; Sorée, B.; Heyns, M.M.; de Gendt, S. |
Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy |
2011 |
European physical journal : B : condensed matter and complex systems |
79 |
10 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Magnus, W.; Brosens, F.; Sorée, B. |
Modeling drive currents and leakage currents : a dynamic approach |
2009 |
Journal of computational electronics |
8 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Modeling the impact of junction angles in tunnel field-effect transistors |
2012 |
Solid state electronics |
69 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sorée, B.; Magnus, W.; Szepieniec, M.; Vandenbreghe, W.; Verhulst, A.; Pourtois, G.; Groeseneken, G.; de Gendt, S.; Heyns, M. |
Novel device concepts for nanotechnology : the nanowire pinch-off FET and graphene tunnelFET |
2010 |
ECS transactions |
28 |
|
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. |
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets |
2012 |
IEEE transactions on electron devices |
59 |
72 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Carrillo-Nunez, H.; Magnus, W.; Vandenberghe, W.G.; Sorée, B.; Peeters, F.M. |
Phonon-assisted Zener tunneling in a p-n diode silicon nanowire |
2013 |
Solid state electronics |
79 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sorée, B.; Magnus, W. |
Quantized conductance without reservoirs : method of the nonequilibrium statistical operator |
2007 |
Journal of computational electronics |
6 |
|
UA library record; WoS full record |
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