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Author Figuerola, A.; van Huis, M.; Zanella, M.; Genovese, A.; Marras, S.; Falqui, A.; Zandbergen, H.W.; Cingolani, R.; Manna, L. doi  openurl
  Title Epitaxial CdSe-Au nanocrystal heterostructures by thermal annealing Type A1 Journal article
  Year 2010 Publication Nano letters Abbreviated Journal Nano Lett  
  Volume 10 Issue (down) 8 Pages 3028-3036  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington Editor  
  Language Wos 000280728900049 Publication Date 2010-07-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1530-6984;1530-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 12.712 Times cited 112 Open Access  
  Notes Approved Most recent IF: 12.712; 2010 IF: 12.219  
  Call Number UA @ lucian @ c:irua:83995 Serial 1069  
Permanent link to this record
 

 
Author Shen, Y.; Turner, S.; Yang, P.; Van Tendeloo, G.; Lebedev, O.I.; Wu, T. pdf  url
doi  openurl
  Title Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations Type A1 Journal article
  Year 2014 Publication Nano letters Abbreviated Journal Nano Lett  
  Volume 14 Issue (down) 8 Pages 4342-4351  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract Controlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vaporliquidsolid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington Editor  
  Language Wos 000340446200022 Publication Date 2014-06-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1530-6984;1530-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 12.712 Times cited 33 Open Access  
  Notes European Union Seventh Framework Programme under Grant 312483 – ESTEEM; FWOl; esteem2_ta Approved Most recent IF: 12.712; 2014 IF: 13.592  
  Call Number UA @ lucian @ c:irua:118622 Serial 1075  
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Author Goris, B.; Bals, S.; van den Broek, W.; Verbeeck, J.; Van Tendeloo, G. pdf  doi
openurl 
  Title Exploring different inelastic projection mechanisms for electron tomography Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 111 Issue (down) 8 Pages 1262-1267  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract Several different projection mechanisms that all make use of inelastically scattered electrons are used for electron tomography. The advantages and the disadvantages of these methods are compared to HAADFSTEM tomography, which is considered as the standard electron tomography technique in materials science. The different inelastic setups used are energy filtered transmission electron microscopy (EFTEM), thickness mapping based on the log-ratio method and bulk plasmon mapping. We present a comparison that can be used to select the best inelastic signal for tomography, depending on different parameters such as the beam stability and nature of the sample. The appropriate signal will obviously also depend on the exact information which is requested.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000300461100039 Publication Date 2011-03-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 21 Open Access  
  Notes Fwo; Iap; Esteem 026019 Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:91260UA @ admin @ c:irua:91260 Serial 1151  
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Author Rosenauer, A.; Schowalter, M.; Glas, F.; Lamoen, D. doi  openurl
  Title First-principles calculations of 002 structure factors for electron scattering in strained InxGa1-xAs Type A1 Journal article
  Year 2005 Publication Physical Review B Abbreviated Journal Phys Rev B  
  Volume 72 Issue (down) 8 Pages 1-10  
  Keywords A1 Journal article; Electron Microscopy for Materials Science (EMAT);  
  Abstract This work provides values of electron scattering 002 structure factors for InxGa1-xAs as a function of the In concentration x=0 to 1. These results allow accurate compositional analysis of pseudomorphically grown InxGa1-xAs/GaAs layers by transmission electron microscopy methods relying on the chemical sensitivity of the (002) beam. The calculations go beyond the limits of the isolated atom approximation, because they take into account charge redistribution effects between atomic sites in the crystal, strain, and static atomic displacements. The computations were performed by the full potential linearized augmented plane-wave method using a generalized gradient approximation for the exchange and correlation part of the potential. The calculations of strained InxGa1-xAs correspond to the strain state in specimens with large, small, and intermediate thickness in the electron beam direction. Additionally, the effect of static atomic displacements is taken into account. All results are listed in a parameterized form. The calculated 002 structure factor vanishes at an In concentration of 16.4%. This value is in a good agreement with previously reported experimental measurements. Hence, our results are a significant improvement with respect to the isolated atom approximation which is conventionally applied in transmission electron microscopy simulations, and which predicts a value of 22.5%.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000231564600106 Publication Date 2005-08-12  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 42 Open Access  
  Notes Approved Most recent IF: 3.836; 2005 IF: 3.185  
  Call Number UA @ lucian @ c:irua:54918 Serial 1201  
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Author Shields, P.A.; Nicholas, R.J.; Peeters, F.M.; Beaumont, B.; Gibart, P. doi  openurl
  Title Free-carrier effects in gallium nitride epilayers: Valence-band dispersion Type A1 Journal article
  Year 2001 Publication Physical Review B Abbreviated Journal Phys Rev B  
  Volume 64 Issue (down) 8 Pages 155303  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The dispersion of the A-valence-band in GaN has been deduced from the observation of high-index magnetoexcitonic states in polarized interband magnetoreflectivity and is found to be strongly nonparabolic with a mass in the range 1.2-1.8m(e). It matches the theory of Kim et al. [Phys. Rev. B 56, 7363 (1997)] extremely well, which also gives a strong k-dependent A-valence-band mass. A strong phonon coupling leads to quenching of the observed transitions at about an LO-phonon energy above the band gap and a strong nonparabolicity. The valence band was deduced from subtracting from the reduced dispersion the electron contribution with a model that includes a full treatment of the electron-phonon interaction.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos 000170623000005 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 13 Open Access  
  Notes Approved Most recent IF: 3.836; 2001 IF: NA  
  Call Number UA @ lucian @ c:irua:37288 Serial 1274  
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Author Neek-Amal, M.; Peeters, F.M. url  doi
openurl 
  Title Graphene nanoribbons subjected to axial stress Type A1 Journal article
  Year 2010 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 82 Issue (down) 8 Pages 085432-085432,6  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract Atomistic simulations are used to study the bending of rectangular graphene nanoribbons subjected to axial stress both for free boundary and supported boundary conditions. The shapes of the deformations of the buckled graphene nanoribbons, for small values of the stress, are sine waves where the number of nodal lines depend on the longitudinal size of the system and the applied boundary condition. The buckling strain for the supported boundary condition is found to be independent of the longitudinal size and estimated to be 0.86%. From a calculation of the free energy at finite temperature we find that the equilibrium projected two-dimensional area of the graphene nanoribbon is less than the area of a flat sheet. At the optimum length the boundary strain for the supported boundary condition is 0.48%.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000281065100007 Publication Date 2010-08-20  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121;1550-235X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.836 Times cited 92 Open Access  
  Notes ; This work was supported by the Flemish Science Foundation (FWO-Vl) and the Belgian Science Policy (IAP). ; Approved Most recent IF: 3.836; 2010 IF: 3.774  
  Call Number UA @ lucian @ c:irua:84583 Serial 1373  
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Author Leadley, D.R.; Nicholas, R.J.; Xu, W.; Peeters, F.M.; Devreese, J.T.; Singleton, J.; Perenboom, J.A.; van Bockstal, L.; Herlach, F.; Foxon, C.T.; Harris, J.J. doi  openurl
  Title High-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scattering Type A1 Journal article
  Year 1993 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 48 Issue (down) 8 Pages 5457-5468  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos A1993LV38500055 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.736 Times cited 22 Open Access  
  Notes Approved CHEMISTRY, PHYSICAL 77/144 Q3 # MATHEMATICS, INTERDISCIPLINARY 19/101 Q1 # PHYSICS, ATOMIC, MOLECULAR & CHEMICAL 17/35 Q2 #  
  Call Number UA @ lucian @ c:irua:5750 Serial 1430  
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Author Turner, S.; Lazar, S.; Freitag, B.; Egoavil, R.; Verbeeck, J.; Put, S.; Strauven, Y.; Van Tendeloo, G. pdf  doi
openurl 
  Title High resolution mapping of surface reduction in ceria nanoparticles Type A1 Journal article
  Year 2011 Publication Nanoscale Abbreviated Journal Nanoscale  
  Volume 3 Issue (down) 8 Pages 3385-3390  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract Surface reduction of ceria nano octahedra with predominant {111} and {100} type surfaces is studied using a combination of aberration-corrected Transmission Electron Microscopy (TEM) and spatially resolved electron energy-loss spectroscopy (EELS) at high energy resolution and atomic spatial resolution. The valency of cerium ions at the surface of the nanoparticles is mapped using the fine structure of the Ce M4,5 edge as a fingerprint. The valency of the surface cerium ions is found to change from 4+ to 3+ owing to oxygen deficiency (vacancies) close to the surface. The thickness of this Ce3+ shell is measured using atomic-resolution Scanning Transmission Electron Microscopy (STEM)-EELS mapping over a {111} surface (the predominant facet for this ceria morphology), {111} type surface island steps and {100} terminating planes. For the {111} facets and for {111} surface islands, the reduction shell is found to extend over a single fully reduced surface plane and 12 underlying mixed valency planes. For the {100} facets the reduction shell extends over a larger area of 56 oxygen vacancy-rich planes. This finding provides a plausible explanation for the higher catalytic activity of the {100} surface facets in ceria.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Cambridge Editor  
  Language Wos 000293521700057 Publication Date 2011-06-30  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2040-3364;2040-3372; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 7.367 Times cited 127 Open Access  
  Notes Fwo Approved Most recent IF: 7.367; 2011 IF: 5.914  
  Call Number UA @ lucian @ c:irua:90361UA @ admin @ c:irua:90361 Serial 1458  
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Author Verbeeck, J.; Tian, H.; Van Tendeloo, G. pdf  doi
openurl 
  Title How to manipulate nanoparticles with an electron beam? Type A1 Journal article
  Year 2013 Publication Advanced materials Abbreviated Journal Adv Mater  
  Volume 25 Issue (down) 8 Pages 1114-1117  
  Keywords A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Weinheim Editor  
  Language Wos 000315102600003 Publication Date 2012-11-26  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0935-9648; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 19.791 Times cited 75 Open Access  
  Notes FWO; VORTEX; Countatoms ECASJO_; Approved Most recent IF: 19.791; 2013 IF: 15.409  
  Call Number UA @ lucian @ c:irua:105287UA @ admin @ c:irua:105287 Serial 1494  
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Author Potapov, P.L.; Verbeeck, J.; Schattschneider, P.; Lichte, H.; van Dyck, D. pdf  doi
openurl 
  Title Inelastic electron holography as a variant of the Feynman thought experiment Type A1 Journal article
  Year 2007 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 107 Issue (down) 8 Pages 559-567  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract Using a combination of electron holography and energy filtering, interference fringes produced after inelastic interaction of electrons with hydrogen molecules are examined. Surprisingly, the coherence of inelastic scattering increases when moving from the surface of a hydrogen-containing bubble to the vacuum. This phenomenon can be understood in terms of the Feynman two-slit thought experiment with a variable ambiguity of the which-way registration. (C) 2006 Elsevier B.V. All rights reserved.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000246937000001 Publication Date 2006-12-16  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 13 Open Access  
  Notes Fwo G.0147.06 Approved Most recent IF: 2.843; 2007 IF: 1.996  
  Call Number UA @ lucian @ c:irua:103588UA @ admin @ c:irua:103588 Serial 1605  
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Author Bleiner, D.; Bogaerts, A.; Belloni, F.; Nassisi, V. doi  openurl
  Title Laser-induced plasmas from the ablation of metallic targets: the problem of the onset temperature, and insights on the expansion dynamics Type A1 Journal article
  Year 2007 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 101 Issue (down) 8 Pages 083301,1-5  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Laser-induced plasmas are transient systems rapidly aging in few nanoseconds of evolution. Time-of-flight spectrometry allowed studying initial plasma characteristics based on frozen translational degrees of freedom, hence overcoming intrinsic limitations of optical spectroscopy. Experimental ion velocity distributions were reconstructed as developed during the longitudinal plasma expansion. The obtained onset plasma temperatures are in the range of similar to 18-45 eV depending on the ablated metals. Also the ion angular spreads were found to be a function of ablated metal, e.g., the narrowest for Fe, the broadest for Al, due to different collisional coupling in the plasma population. (c) 2007 American Institute of Physics.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000246072200047 Publication Date 2007-04-18  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 31 Open Access  
  Notes Approved Most recent IF: 2.068; 2007 IF: 2.171  
  Call Number UA @ lucian @ c:irua:64635 Serial 1788  
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Author Bezjak, J.; Abakumov, A.M.; Recnik, A.; Krzmanc, M.M.; Jancar, B.; Suvorov, D. doi  openurl
  Title The local structure and composition of Ba4Nb2O9-based oxycarbonates Type A1 Journal article
  Year 2010 Publication Journal of solid state chemistry Abbreviated Journal J Solid State Chem  
  Volume 183 Issue (down) 8 Pages 1823-1828  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract X-ray powder-diffraction(XRD),high-resolutiontransmissionelectronmicroscopy(HRTEM),electron diffraction(ED),infraredspectroscopy(IR),thermogravimetry(TG)andmassspectroscopy(MS)were performedtoinvestigatethecompositionandthecrystalstructureoftetra-bariumdi-niobate(V) Ba4Nb2O9. TheTG,MSandIRstudiesrevealedthatthecompoundisahydratedoxycarbonate.Assuming that thecarbonatestoichiometricallyreplacesoxygen,thecompositionofthelow-temperature a-modification,obtainedbyslowcoolingfrom1100 1C, correspondstoBa4Nb2O8.8(CO3)0.2 0.1H2O, while thequenchedhigh-temperature g-modificationhastheBa4Nb2O8.42(CO3)0.58 0.38H2O composi- tion. The a-phase hasacompositeincommensuratelymodulatedstructureconsistingoftwomutually interacting[Ba]N and the[(Nb,)O3]N subsystems.Thecompositemodulatedcrystalstructureofthe a-phase canbedescribedwiththelatticeparameters a¼10.2688(1) A˚ , c¼2.82426(8) A˚ , q¼0.66774(2)c* and asuperspacegroup R3m(00g)0s. TheHRTEManalysisdemonstratesthenanoscale twinningofthetrigonaldomainsparalleltothe{100}crystallographicplanes.Thetwinningintroduces a one-dimensionaldisorderintothe[(Nb,)O3]N subsystem,whichresultsinanaverage P62c crystal structureofthe a-phase. Possibleplacesforthecarbonategroupinthestructurearediscussedusinga comparisonwithotherhexagonalperovskite-basedoxycarbonates.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000280620300013 Publication Date 2010-06-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-4596; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.299 Times cited 10 Open Access  
  Notes Approved Most recent IF: 2.299; 2010 IF: 2.261  
  Call Number UA @ lucian @ c:irua:84046 Serial 1830  
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Author Walter, A.L.; Sahin, H.; Jeon, K.J.; Bostwick, A.; Horzum, S.; Koch, R.; Speck, F.; Ostler, M.; Nagel, P.; Merz, M.; Schupler, S.; Moreschini, L.; Chang, Y.J.; Seyller, T.; Peeters, F.M.; Horn, K.; Rotenberg, E.; doi  openurl
  Title Luminescence, patterned metallic regions, and photon-mediated electronic changes in single-sided fluorinated graphene sheets Type A1 Journal article
  Year 2014 Publication ACS nano Abbreviated Journal Acs Nano  
  Volume 8 Issue (down) 8 Pages 7801-7808  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract Single-sided fluorination has been predicted to open an electronic band gap in graphene and to exhibit unique electronic and magnetic properties; however, this has not been substantiated by experimental reports. Our comprehensive experimental and theoretical study of this material on a SiC(0001) substrate shows that single-sided fluorographene exhibits two phases, a stable one with a band gap of similar to 6 eV and a metastable one, induced by UV irradiation, with a band gap of similar to 2.5 eV. The metastable structure, which reverts to the stable “ground-state” phase upon annealing under emission of blue light, in our view is induced by defect states, based on the observation of a nondispersive electronic state at the top of the valence band, not unlike that found in organic molecular layers. Our structural data show that the stable C2F ground state has a “boat” structure, in agreement with our X-ray magnetic circular dichroism data, which show the absence of an ordered magnetic phase. A high flux of UV or X-ray photons removes the fluorine atoms, demonstrating the possibility of lithographically patterning conducting regions into an otherwise semiconducting 2D material.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000340992300025 Publication Date 2014-08-09  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1936-0851;1936-086X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 13.942 Times cited 23 Open Access  
  Notes Approved Most recent IF: 13.942; 2014 IF: 12.881  
  Call Number UA @ lucian @ c:irua:119263 Serial 1857  
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Author Brück, S.; Paul, M.; Tian, H.; Müller, A.; Kufer, D.; Praetorius, C.; Fauth, K.; Audehm, P.; Goering, E.; Verbeeck, J.; Van Tendeloo, G.; Sing, M.; Claessen, R.; pdf  doi
openurl 
  Title Magnetic and electronic properties of the interface between half metallic Fe3O4 and semiconducting ZnO Type A1 Journal article
  Year 2012 Publication Applied physics letters Abbreviated Journal Appl Phys Lett  
  Volume 100 Issue (down) 8 Pages 081603-081603,4  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract We have investigated the magnetic depth profile of an epitaxial Fe3O4 thin film grown directly on a semiconducting ZnO substrate by soft x-ray resonant magnetic reflectometry (XRMR) and electron energy loss spectroscopy (EELS). Consistent chemical profiles at the interface between ZnO and Fe3O4 are found from both methods. Valence selective EELS and XRMR reveal independently that the first monolayer of Fe at the interface between ZnO and Fe3O4 contains only Fe3+ ions. Besides this narrow 2.5 Å interface layer, Fe3O4 shows magnetic bulk properties throughout the whole film making highly efficient spin injection in this system feasible.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000300711200014 Publication Date 2012-02-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.411 Times cited 12 Open Access  
  Notes The authors thank E. Pellegrin for helpful comments and S. Macke for help with the software REMAGX. S.B. acknowledges financial support by the HZB, Berlin, and the Australian Government via Grant No. RM08550. H.T. acknowledges funding from GOA project “XANES meets ELNES,” J.V. and G.V.T. acknowledge funding from the European Research Council under Grant No. 46791-COUN-TATOMS. The authors acknowledge financial support by the DFG through Forschergruppe FOR 1162. Approved Most recent IF: 3.411; 2012 IF: 3.794  
  Call Number UA @ lucian @ c:irua:95041UA @ admin @ c:irua:95041 Serial 1860  
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Author Shi, J.M.; Peeters, F.M.; Devreese, J.T. doi  openurl
  Title Magnetopolaron effect on shallow donor states in GaAs Type A1 Journal article
  Year 1993 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 48 Issue (down) 8 Pages 5202-5216  
  Keywords A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos A1993LV38500026 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.736 Times cited 58 Open Access  
  Notes Approved CHEMISTRY, MULTIDISCIPLINARY 56/163 Q2 # CRYSTALLOGRAPHY 6/26 Q1 #  
  Call Number UA @ lucian @ c:irua:5749 Serial 1923  
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Author Adriaensen, L.; Vangaever, F.; Lenaerts, J.; Gijbels, R. doi  openurl
  Title Matrix-enhanced secondary ion mass spectrometry: the influence of MALDI matrices on molecular ion yields of thin organic films Type A1 Journal article
  Year 2005 Publication Rapid communications in mass spectrometry Abbreviated Journal Rapid Commun Mass Sp  
  Volume 19 Issue (down) 8 Pages 1017-1024  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication London Editor  
  Language Wos 000228571700007 Publication Date 2005-03-14  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0951-4198;1097-0231; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.998 Times cited 24 Open Access  
  Notes Approved Most recent IF: 1.998; 2005 IF: 3.087  
  Call Number UA @ lucian @ c:irua:51981 Serial 1958  
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Author Felten, A.; Gillon, X.; Gulas, M.; Pireaux, J.-J.; Ke, X.; Van Tendeloo, G.; Bittencourt, C.; Najafi, E.; Hitchcock, A.P. pdf  doi
openurl 
  Title Measuring point defect density in individual carbon nanotubes using polarization-dependent X-ray microscopy Type A1 Journal article
  Year 2010 Publication ACS nano Abbreviated Journal Acs Nano  
  Volume 4 Issue (down) 8 Pages 4431-4436  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The presence of defects in carbon nanotubes strongly modifies their electrical, mechanical, and chemical properties. It was long thought undesirable, but recent experiments have shown that introduction of structural defects using ion or electron irradiation can lead to novel nanodevices. We demonstrate a method for detecting and quantifying point defect density in individual carbon nanotubes (CNTs) based on measuring the polarization dependence (linear dichroism) of the C 1s → π* transition at specific locations along individual CNTs with a scanning transmission X-ray microscope (STXM). We show that STXM can be used to probe defect density in individual CNTs with high spatial resolution. The quantitative relationship between ion dose, nanotube diameter, and defect density was explored by purposely irradiating selected sections of nanotubes with kiloelectronvolt (keV) Ga+ ions. Our results establish polarization-dependent X-ray microscopy as a new and very powerful characterization technique for carbon nanotubes and other anisotropic nanostructures.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000281052700014 Publication Date 2010-07-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1936-0851;1936-086X; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 13.942 Times cited 26 Open Access  
  Notes Approved Most recent IF: 13.942; 2010 IF: 9.865  
  Call Number UA @ lucian @ c:irua:84734 Serial 1966  
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Author Ignatova, V.A.; Lebedev, O.I.; Watjen, U.; van Vaeck, L.; van Landuyt, J.; Gijbels, R.; Adams, F. pdf  doi
openurl 
  Title Metal and composite nanocluster precipitate formation in silicon dioxide implanted with Sb+ ions Type A1 Journal article
  Year 2002 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 92 Issue (down) 8 Pages 4336-4341  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000178318000024 Publication Date 2002-10-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 5 Open Access  
  Notes Approved Most recent IF: 2.068; 2002 IF: 2.281  
  Call Number UA @ lucian @ c:irua:39872 Serial 2005  
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Author Wang, A.; Chen, F.R.; Van Aert, S.; van Dyck, D. pdf  doi
openurl 
  Title A method to determine the local surface profile from reconstructed exit waves Type A1 Journal article
  Year 2011 Publication Ultramicroscopy Abbreviated Journal Ultramicroscopy  
  Volume 111 Issue (down) 8 Pages 1352-1359  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT); Vision lab  
  Abstract Reconstructed exit waves are useful to quantify unknown structure parameters such as the position and composition of the atom columns at atomic scale. Existing techniques provide a complex wave in a flat plane which is close to the plane where the electrons leave the atom columns. However, due to local deviation in the flatness of the exit surface, there will be an offset between the plane of reconstruction and the actual exit of a specific atom column. Using the channelling theory, it has been shown that this defocus offset can in principle be determined atom column-by-atom column. As such, the surface roughness could be quantified at atomic scale. However, the outcome strongly depends on the initial plane of reconstruction especially in a crystalline structure. If this plane is further away from the true exit, the waves of the atom columns become delocalized and interfere mutually which strongly complicates the interpretation of the exit wave in terms of the local structure. In this paper, we will study the delocalization with defocus using the channelling theory in a more systematic way.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000300461100049 Publication Date 2011-05-03  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0304-3991; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.843 Times cited 3 Open Access  
  Notes Fwo Approved Most recent IF: 2.843; 2011 IF: 2.471  
  Call Number UA @ lucian @ c:irua:88941 Serial 2017  
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Author Zieliński, P.; Michel, K.H. url  doi
openurl 
  Title Microscopic model of surfaces in orientationally disordered ionic crystals : the (001) surface of KCN Type A1 Journal article
  Year 1992 Publication Physical review : B : condensed matter and materials physics Abbreviated Journal Phys Rev B  
  Volume 46 Issue (down) 8 Pages 4806-4815  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract The crystallographic structure and the distribution of orientations of molecular ions are studied near the surface in an orientationally disordered crystal with the use of a Green-function formalism. The orientational degrees of freedom are treated by means of symmetry-adapted functions of angular coordinates. The structure of the (001) surface of KCN in its cubic fcc phase is then predicted using the existing data on the interaction of the ions K+ and CN-. A local antiferroelectric and antiferroelastic order i shown to exist in the surface region. The magnitude of the order and the spatial extent of the ordered re ion increase as the temperature approaches the point of the phase transition to the ordered phase. The,influence of the external electric field on the structure of the surface is predicted.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Lancaster, Pa Editor  
  Language Wos A1992JK72500049 Publication Date 2002-07-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829;1095-3795; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.736 Times cited 4 Open Access  
  Notes Approved PHYSICS, CONDENSED MATTER 16/67 Q1 #  
  Call Number UA @ lucian @ c:irua:2974 Serial 2029  
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Author Lei, C.H.; Van Tendeloo, G.; Siegert, M.; Schubert, J. doi  openurl
  Title Microstructural investigation of BaTiO3 thin films deposited on (001) MgO Type A1 Journal article
  Year 2002 Publication Journal of materials research Abbreviated Journal J Mater Res  
  Volume 17 Issue (down) 8 Pages 1923-1931  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The microstructure of BaTiO3 thin films, epitaxially deposited on (001) MgO by pulsed laser ablation, has been investigated by transmission electron microscopy. The films are always c-axis-orientated, but dislocations, {111} stacking faults, and antiphase boundaries are frequently observed. Conventional TEM and high-resolution microscopy allow one to deduce the Burgers vectors of dislocations as b(1) = <100> or b(2) = <110>, both being perfect dislocations. Most extrinsic stacking faults are ending at 1/3<112> or 1/3<111> partial dislocations; the displacement vector of the antiphase boundaries is 1/2<101>. Studying the interfacial structure by means of zone images taken along [100] and [110] shows that the misfit is mainly released by dislocations with Burgers vectors of 1/2<110> and 1/2<101>.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000177208800010 Publication Date 2008-03-06  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0884-2914;2044-5326; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 1.673 Times cited 8 Open Access  
  Notes Approved Most recent IF: 1.673; 2002 IF: 1.530  
  Call Number UA @ lucian @ c:irua:103343 Serial 2044  
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Author Lebedev, O.I.; Van Tendeloo, G.; Amelinckx, S. doi  openurl
  Title Misfit accommodation of epitaxial La1-xAxMnO3 (A=Ca, Sr) thin films Type A1 Journal article
  Year 2001 Publication International journal of inorganic materials Abbreviated Journal Int J Inorg Mater  
  Volume 3 Issue (down) 8 Pages 1331-1337  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Amsterdam Editor  
  Language Wos 000172877700054 Publication Date 2002-07-25  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1466-6049; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited 2 Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:54830 Serial 2087  
Permanent link to this record
 

 
Author Eckert, M.; Neyts, E.; Bogaerts, A. pdf  doi
openurl 
  Title Modeling adatom surface processes during crystal growth: a new implementation of the Metropolis Monte Carlo algorithm Type A1 Journal article
  Year 2009 Publication CrystEngComm Abbreviated Journal Crystengcomm  
  Volume 11 Issue (down) 8 Pages 1597-1608  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract In this paper, a new implementation of the Metropolis Monte Carlo (MMC) algorithm is presented. When combining the MMC model with a molecular dynamics (MD) code, crystal growth by plasma-enhanced chemical vapor deposition can be simulated. As the MD part simulates impacts of growth species onto the surface on a time scale of picoseconds, the MMC algorithm simulates the slower adatom surface processes. The implementation includes a criterion for the selection of atoms that are allowed to be displaced during the simulation, and a criterion of after how many MMC cycles the simulation is stopped. We performed combined MD-MMC simulations for hydrocarbon species that are important for the growth of ultrananocrystalline diamond (UNCD) films at partially hydrogenated diamond surfaces, since this implementation is part of a study of the growth mechanisms of (ultra)nanocrystalline diamond films. Exemplary for adatom arrangements during the growth of UNCD, the adatom surface behavior of C and C2H2 at diamond (111)1 × 1, C and C4H2 at diamond (111)1 × 1 and C3 at diamond (100)2 × 1 has been investigated. For all cases, the diamond crystal structure is pursued under the influence of MMC simulation. Additional longer time-scale MD simulations put forward very similar structures, verifying the MMC algorithm. Nevertheless, the MMC simulation time is typically one order of magnitude shorter than the MD simulation time.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos 000268184300021 Publication Date 2009-04-07  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1466-8033; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 3.474 Times cited 15 Open Access  
  Notes Approved Most recent IF: 3.474; 2009 IF: 4.183  
  Call Number UA @ lucian @ c:irua:77374 Serial 2106  
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Author Titantah, J.T.; Lamoen, D.; Schowalter, M.; Rosenauer, A. pdf  doi
openurl 
  Title Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1-xInxAs/GaAs quantum wells Type A1 Journal article
  Year 2009 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 105 Issue (down) 8 Pages 084310,1-084310,8  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract The modified atomic scattering amplitudes (MASAs) of mixed Ga<sub>1-x</sub>In<sub>x</sub>As, GaAs<sub>1-x</sub>N<sub>x</sub>, and InAs<sub>1-x</sub>N<sub>x</sub> are calculated using the density functional theory approach and the results are compared with those of the binary counterparts. The MASAs of N, Ga, As, and In for various scattering vectors in various chemical environments and in the zinc-blende structure are compared with the frequently used Doyle and Turner values. Deviation from the Doyle and Turner results is found for small scattering vectors (s<0.3 Å<sup>-1</sup>) and for these scattering vectors the MASAs are found to be sensitive to the orientation of the scattering vector and on the chemical environment. The chemical environment sensitive MASAs are used within zero pressure classical Metropolis Monte Carlo, finite temperature calculations to investigate the effect of well size on the electron 002 and 220 structure factors (SFs). The implications of the use of the 002 (200) spot for the quantification of nanostructured Ga<sub>1-x</sub>In<sub>x</sub>As systems are examined while the 220 SF across the well is evaluated and is found to be very sensitive to the in-plane static displacements.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000268064700149 Publication Date 2009-04-23  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979; ISBN Additional Links UA library record; WoS full record  
  Impact Factor 2.068 Times cited Open Access  
  Notes Fwo G.0425.05; Esteem 026019 Approved Most recent IF: 2.068; 2009 IF: 2.072  
  Call Number UA @ lucian @ c:irua:78282 Serial 2160  
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Author Sen, H.S.; Sahin, H.; Peeters, F.M.; Durgun, E. doi  openurl
  Title Monolayers of MoS2 as an oxidation protective nanocoating material Type A1 Journal article
  Year 2014 Publication Journal of applied physics Abbreviated Journal J Appl Phys  
  Volume 116 Issue (down) 8 Pages 083508  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract First-principle calculations are employed to investigate the interaction of oxygen with ideal and defective MoS2 monolayers. Our calculations show that while oxygen atoms are strongly bound on top of sulfur atoms, the oxygen molecule only weakly interacts with the surface. The penetration of oxygen atoms and molecules through a defect-free MoS2 monolayer is prevented by a very high diffusion barrier indicating that MoS2 can serve as a protective layer for oxidation. The analysis is extended to WS2 and similar coating characteristics are obtained. Our calculations indicate that ideal and continuous MoS2 and WS2 monolayers can improve the oxidation and corrosion-resistance of the covered surface and can be considered as an efficient nanocoating material. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.  
  Address  
  Corporate Author Thesis  
  Publisher American Institute of Physics Place of Publication New York, N.Y. Editor  
  Language Wos 000342821600017 Publication Date 2014-08-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979;1089-7550; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.068 Times cited 52 Open Access  
  Notes ; This work was supported by the bilateral project between TUBITAK (through Grant No. 113T050) and Flemish Science Foundation (FWO-Vl). The calculations were performed at TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). E.D. acknowledges support from Bilim Akademisi-The Science Academy, Turkey under the BAGEP program. H.S. is supported by an FWO Pegasus-long Marie Curie Fellowship. ; Approved Most recent IF: 2.068; 2014 IF: 2.183  
  Call Number UA @ lucian @ c:irua:121101 Serial 2194  
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Author Gasparotto, A.; Barreca, D.; Fornasiero, P.; Gombac, V.; Lebedev, O.; Maccato, C.; Montini, T.; Tondello, E.; Van Tendeloo, G.; Comini, E.; Sberveglieri, G. openurl 
  Title Multi-functional copper oxide nanosystems for H2 sustainable production and sensing Type A2 Journal article
  Year 2009 Publication ECS transactions Abbreviated Journal  
  Volume 25 Issue (down) 8 Pages 1169-1176  
  Keywords A2 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract This work focuses on the use of tailored copper oxide nanoarchitectures as multi-functional materials for the sustainable production of hydrogen and its on-line detection. An innovative copper(II) precursor, Cu(hfa)2TMEDA, was adopted in the CVD of CuxO (x=1,2) nanosystems under both O2 and O2+H2O atmospheres on Si(100) and Al2O3 substrates. A multi-technique characterization indicates that both the phase composition (from Cu2O to CuO) and morphology (from continuous films to entangled quasi-1D nanosystems) can be tailored by varying the growth temperature and reaction atmosphere. The obtained CuxO nanodeposits are active in the photocatalytic H2 production from aqueous solutions under UV-Vis irradiation and display interesting gas sensing performances towards hydrogen detection even at moderate temperatures.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Wos Publication Date 0000-00-00  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1938-5862 ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor Times cited Open Access  
  Notes Approved Most recent IF: NA  
  Call Number UA @ lucian @ c:irua:81872 Serial 2211  
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Author Földi, P.; Kálmán, O.; Benedict, M.G.; Peeters, F.M. doi  openurl
  Title Networks of quantum nanorings : programmable spintronic devices Type A1 Journal article
  Year 2008 Publication Nano letters Abbreviated Journal Nano Lett  
  Volume 8 Issue (down) 8 Pages 2556-2558  
  Keywords A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)  
  Abstract An array of quantum rings with local (ring by ring) modulation of the spin orbit interaction (SOI) can lead to novel effects in spin state transformation of electrons. It is shown that already small (3 x 3, 5 x 5) networks are remarkably versatile from this point of view: Working in a given network geometry, the input current can be directed to any of the output ports, simply by changing the SOI strengths by external gate voltages. Additionally, the same network with different SOI strengths can be completely analogous to the Stern-Gerlach device, exhibiting spatial-spin entanglement.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Washington Editor  
  Language Wos 000258440700077 Publication Date 2008-07-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1530-6984;1530-6992; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 12.712 Times cited 76 Open Access  
  Notes Approved Most recent IF: 12.712; 2008 IF: 10.371  
  Call Number UA @ lucian @ c:irua:102609 Serial 2294  
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Author Schattschneider, P.; Stoeger-Pollach, M.; Verbeeck, J. url  doi
openurl 
  Title Novel vortex generator and mode converter for electron beams Type A1 Journal article
  Year 2012 Publication Physical review letters Abbreviated Journal Phys Rev Lett  
  Volume 109 Issue (down) 8 Pages 084801-1  
  Keywords A1 Journal article; Electron microscopy for materials research (EMAT)  
  Abstract A mode converter for electron vortex beams is described. Numerical simulations, confirmed by experiment, show that the converter transforms a vortex beam with a topological charge m = +/- 1 into beams closely resembling Hermite-Gaussian HG(10) and HG(01) modes. The converter can be used as a mode discriminator or filter for electron vortex beams. Combining the converter with a phase plate turns a plane wave into modes with topological charge m = +/- 1. This combination serves as a generator of electron vortex beams of high brilliance.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000307790900004 Publication Date 2012-08-22  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-9007;1079-7114; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 8.462 Times cited 74 Open Access  
  Notes Countatoms; Vortex ECASJO_; Approved Most recent IF: 8.462; 2012 IF: 7.943  
  Call Number UA @ lucian @ c:irua:101103UA @ admin @ c:irua:101103 Serial 2384  
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Author Tinck, S.; De Schepper, P.; Bogaerts, A. pdf  doi
openurl 
  Title Numerical investigation of SiO2 coating deposition in wafer processing reactors with SiCl4/O2/Ar inductively coupled plasmas Type A1 Journal article
  Year 2013 Publication Plasma processes and polymers Abbreviated Journal Plasma Process Polym  
  Volume 10 Issue (down) 8 Pages 714-730  
  Keywords A1 Journal article; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)  
  Abstract Simulations and experiments are performed to obtain a better insight in the plasma enhanced chemical vapor deposition process of SiO2 by SiCl4/O2/Ar plasmas for introducing a SiO2-like coating in wafer processing reactors. Reaction sets describing the plasma and surface chemistry of the SiCl4/O2/Ar mixture are presented. Typical calculation results include the bulk plasma characteristics, i.e., electrical properties, species densities, and information on important production and loss processes, as well as the chemical composition of the deposited coating, and the thickness uniformity of the film on all reactor surfaces. The film deposition characteristics, and the trends for varying discharge conditions, are explained based on the plasma behavior, as calculated by the model.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Weinheim Editor  
  Language Wos 000327790000006 Publication Date 2013-05-28  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1612-8850; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.846 Times cited 3 Open Access  
  Notes Approved Most recent IF: 2.846; 2013 IF: 2.964  
  Call Number UA @ lucian @ c:irua:109900 Serial 2397  
Permanent link to this record
 

 
Author Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Leonelli, D.; Groeseneken, G.; De Meyer, K. doi  openurl
  Title Optimization of gate-on-source-only tunnel FETs with counter-doped pockets Type A1 Journal article
  Year 2012 Publication IEEE transactions on electron devices Abbreviated Journal Ieee T Electron Dev  
  Volume 59 Issue (down) 8 Pages 2070-2077  
  Keywords A1 Journal article; Condensed Matter Theory (CMT)  
  Abstract We investigate a promising tunnel FET configuration having a gate on the source only, which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current than the lateral tunneling configuration with a gate on the channel. Our analysis is performed based on a recently developed 2-D quantum-mechanical simulator calculating band-to-band tunneling and including quantum confinement (QC). It is shown that the two disadvantages of the structure, namely, the sensitivity to gate alignment and the physical oxide thickness, are mitigated by placing a counter-doped parallel pocket underneath the gate-source overlap. The pocket also significantly reduces the field-induced QC. The findings are illustrated with all-Si and all-Ge gate-on-source-only tunnel field-effect transistor simulations.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication New York, N.Y. Editor  
  Language Wos 000306920200011 Publication Date 2012-06-27  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9383;1557-9646; ISBN Additional Links UA library record; WoS full record; WoS citing articles  
  Impact Factor 2.605 Times cited 72 Open Access  
  Notes ; Manuscript received February 17, 2012; revised May 7, 2012; accepted May 11, 2012. Date of publication June 26, 2012; date of current version July 19, 2012. This work was supported by the Interuniversity Microelectronics Center's Industrial Affiliation Program. The work of W. G. Vandenberghe was supported by the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen) through a Ph.D. stipend. The review of this paper was arranged by Editor H. S. Momose. ; Approved Most recent IF: 2.605; 2012 IF: 2.062  
  Call Number UA @ lucian @ c:irua:100820 Serial 2487  
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