toggle visibility
Search within Results:
Display Options:

Select All    Deselect All
List View
 |   | 
   print
  Author Title Year Publication Volume Times cited Additional Links Links
Sun, J.; Li, Y.; Karaaslan, Y.; Sevik, C.; Chen, Y. Misfit dislocation structure and thermal boundary conductance of GaN/AlN interfaces 2021 Journal Of Applied Physics 130 UA library record; WoS full record; WoS citing articles doi
Buschmann, V.; Rodewald, M.; Fuess, H.; Van Tendeloo, G.; Schäffer, C. High resolution electron microscopy study of molecular beam epitaxy grown CoSi2/Si1-xGex/Si(100) heterostructurs 1999 Journal of applied physics 85 6 UA library record; WoS full record; WoS citing articles doi
Milovanović, S.P.; Masir, M.R.; Peeters, F.M. Magnetic electron focusing and tuning of the electron current with a pn-junction 2014 Journal of applied physics 115 21 UA library record; WoS full record; WoS citing articles pdf doi
Dhong, H.M.; Zhang, J.; Peeters, F.M.; Xu, W. Optical conductance and transmission in bilayer graphene 2009 Journal of applied physics 106 11 UA library record; WoS full record; WoS citing articles doi
Gryse, O.D.; Clauws, P.; van Landuyt, J.; Lebedev, O.; Claeys, C.; Simoen, E.; Vanhellemont, J. Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques 2002 Journal of applied physics 91 27 UA library record; WoS full record; WoS citing articles pdf doi
Cornelissens, Y.G.; Peeters, F.M. Response function of a Hall magnetosensor in the diffusive regime 2002 Journal of applied physics 92 24 UA library record; WoS full record; WoS citing articles doi
Kao, K.-H.; Verhulst, A.S.; Van de Put, M.; Vandenberghe, W.G.; Sorée, B.; Magnus, W.; De Meyer, K. Tensile strained Ge tunnel field-effect transistors: k\cdot p material modeling and numerical device simulation 2014 Journal of applied physics 115 26 UA library record; WoS full record; WoS citing articles doi
Papp, G.; Peeters, F.M. Tunable giant magnetoresistance with magnetic barriers 2006 Journal of applied physics 100 49 UA library record; WoS full record; WoS citing articles doi
Lu, A.K.A.; Pourtois, G.; Luisier, M.; Radu, I.P.; Houssa, M. On the electrostatic control achieved in transistors based on multilayered MoS2 : a first-principles study 2017 Journal of applied physics 121 UA library record; WoS full record; WoS citing articles url doi
Vereecke, B.; van der Veen, M.H.; Sugiura, M.; Kashiwagi, Y.; Ke, X.; Cott, D.J.; Hantschel, T.; Huyghebaert, C.; Tökei, Z. Wafer-level electrical evaluation of vertical carbon nanotube bundles as a function of growth temperature 2013 Japanese journal of applied physics 52 5 UA library record; WoS full record; WoS citing articles pdf doi
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology 2009 Journal of applied physics 106 3 UA library record; WoS full record; WoS citing articles doi
Herrebout, D.; Bogaerts, A.; Yan, M.; Gijbels, R.; Goedheer, W.; Vanhulsel, A. Modeling of a capacitively coupled radio-frequency methane plasma: comparison between a one-dimensional and a two-dimensional fluid model 2002 Journal of applied physics 92 15 UA library record; WoS full record; WoS citing articles doi
de Witte, H.; Vandervorst, W.; Gijbels, R. Modeling of bombardment induced oxidation of silicon 2001 Journal of applied physics 89 16 UA library record; WoS full record; WoS citing articles doi
Verreck, D.; Van de Put, M.; Sorée, B.; Verhulst, A.S.; Magnus, W.; Vandenberghe, W.G.; Collaert, N.; Thean, A.; Groeseneken, G. Quantum mechanical solver for confined heterostructure tunnel field-effect transistors 2014 Journal of applied physics 115 15 UA library record; WoS full record; WoS citing articles doi
Milants, K.; Verheyden, J.; Barancira, T.; Deweerd, W.; Pattyn, H.; Bukshpan, S.; Williamson, D.L.; Vermeiren, F.; Van Tendeloo, G.; Vlekken, C.; Libbrecht, S.; van Haesendonck, C. Size distribution and magnetic behavior of lead inclusions in silicon single crystals 1997 Journal of applied physics 81 8 UA library record; WoS full record; WoS citing articles
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. Zener tunneling in semiconductors under nonuniform electric fields 2010 Journal of applied physics 107 22 UA library record; WoS full record; WoS citing articles doi
Ishikawa, K.; Karahashi, K.; Ichiki, T.; Chang, J.P.; George, S.M.; Kessels, W.M.M.; Lee, H.J.; Tinck, S.; Um, J.H.; Kinoshita, K. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? 2017 Japanese journal of applied physics 56 18 UA library record; WoS full record; WoS citing articles pdf url doi
Chen, Z.; Bleiner, D.; Bogaerts, A. Effect of ambient pressure on laser ablation and plume expansion dynamics: a numerical simulation 2006 Journal of applied physics 99 42 UA library record; WoS full record; WoS citing articles doi
Malakho, A.; Fargin, E.; Lahaye, M.; Lazoryak, B.; Morozov, V.; Van Tendeloo, G.; Rodriguez, V.; Adamietz, F. Enhancement of second harmonic generation signal in thermally poled glass ceramic with NaNbO3 nanocrystals 2006 Journal of applied physics 100 13 UA library record; WoS full record; WoS citing articles doi
Dong, H.M.; Xu, W.; Peeters, F.M. High-field transport properties of graphene 2011 Journal of applied physics 110 17 UA library record; WoS full record; WoS citing articles doi
Amini, M.N.; Saniz, R.; Lamoen, D.; Partoens, B. Hydrogen impurities and native defects in CdO 2011 Journal of applied physics 110 13 UA library record; WoS full record; WoS citing articles doi
Okhrimovskyy, A.; Bogaerts, A.; Gijbels, R. Incorporating the gas flow in a numerical model of rf discharges in methane 2004 Journal of applied physics 96 11 UA library record; WoS full record; WoS citing articles doi
Papp, G.; Peeters, F.M. Magnetoresistance in a hybrid ferromagnetic/semiconductor device 2010 Journal of applied physics 107 10 UA library record; WoS full record; WoS citing articles doi
Ariskin, D.A.; Schweigert, I.V.; Alexandrov, A.L.; Bogaerts, A.; Peeters, F.M. Modeling of chemical processes in the low pressure capacitive radio frequency discharges in a mixture of Ar/C2H2 2009 Journal of applied physics 105 21 UA library record; WoS full record; WoS citing articles doi
Bogaerts, A.; Yan, M.; Gijbels, R.; Goedheer, W. Modeling of ionization of argon in an analytical capacitively coupled radio-frequency glow discharge 1999 Journal of applied physics 86 18 UA library record; WoS full record; WoS citing articles doi
Papp, G.; Peeters, F.M. Resistance maps from local probing of a ballistic mesoscopic Hall bar 2007 Journal of applied physics 101 5 UA library record; WoS full record; WoS citing articles url doi
Moors, K.; Sorée, B.; Tokei, Z.; Magnus, W. Resistivity scaling and electron relaxation times in metallic nanowires 2014 Journal of applied physics 116 17 UA library record; WoS full record; WoS citing articles url doi
Carrillo-Nuñez, H.; Magnus, W.; Peeters, F.M. A simplified quantum mechanical model for nanowire transistors based on non-linear variational calculus 2010 Journal of applied physics 108 7 UA library record; WoS full record; WoS citing articles doi
Bernaerts, D.; Van Tendeloo, G.; Amelinckx, S.; Hevesi, K.; Gensterblum, G.; Yu, L.M.; Pireaux, J.J.; Grey, F.; Bohr, J. Structural defects and epitaxial rotation of C60 and C70 (111) films on GeS(001) 1996 Journal of applied physics 80 6 UA library record; WoS full record; WoS citing articles pdf doi
Topalovic, D.B.; Arsoski, V.V.; Tadic, M.Z.; Peeters, F.M. Asymmetric versus symmetric HgTe/CdxHg1-x Te double quantum wells: Bandgap tuning without electric field 2020 Journal Of Applied Physics 128 3 UA library record; WoS full record; WoS citing articles pdf doi
Select All    Deselect All
List View
 |   | 
   print

Save Citations:
Export Records: