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Author |
Title |
Year |
Publication |
Volume |
Times cited |
Additional Links  |
Links |
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Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor |
2004 |
Journal of applied physics |
96 |
14 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Lujan, G.S.; Sorée, B.; Magnus, W.; de Meyer, K. |
A method to calculate tunneling leakage currents in silicon inversion layers |
2006 |
Journal of applied physics |
100 |
1 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Croitoru, M.D.; Gladilin, V.N.; Fomin, V.M.; Devreese, J.T.; Magnus, W.; Schoenmaker, W.; Sorée, B. |
Quantum transport in an ultra-thin SOI MOSFET: influence of the channel thickness on the I-V characteristics |
2008 |
Solid state communications |
147 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. |
Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference |
2008 |
Physical review : B : condensed matter and materials physics |
77 |
8 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Tunneling-lifetime model for metal-oxide-semiconductor structures |
2009 |
Physical review : B : solid state |
80 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pourghaderi, M.A.; Magnus, W.; Sorée, B.; Meuris, M.; de Meyer, K.; Heyns, M. |
Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology |
2009 |
Journal of applied physics |
106 |
3 |
UA library record; WoS full record; WoS citing articles |
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|
|
Zhang, Y.; Fischetti, M.V.; Sorée, B.; Magnus, W.; Heyns, M.; Meuris, M. |
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers |
2009 |
Journal of applied physics |
106 |
29 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.; Sorée, B.; Magnus, W.; Groeseneken, G. |
Zener tunneling in semiconductors under nonuniform electric fields |
2010 |
Journal of applied physics |
107 |
22 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Magnus, W.; Brosens, F.; Sorée, B. |
Time dependent transport in 1D micro- and nanostructures: solving the Boltzmann and Wigner-Boltzmann equations |
2009 |
Journal of physics : conference series |
193 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.G.; Sorée, B.; Magnus, W.; Groeseneken, G.; Fischetti, M.V. |
Impact of field-induced quantum confinement in tunneling field-effect devices |
2011 |
Applied physics letters |
98 |
76 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Katti, G.; Stucchi, M.; Velenis, D.; Sorée, B.; de Meyer, K.; Dehaene, W. |
Temperature-dependent modeling and characterization of through-silicon via capacitance |
2011 |
IEEE electron device letters |
32 |
27 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sels, D.; Sorée, B.; Groeseneken, G. |
Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor |
2011 |
Journal of computational electronics |
10 |
12 |
UA library record; WoS full record; WoS citing articles |
|
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Cantoro, M.; Klekachev, A.V.; Nourbakhsh, A.; Sorée, B.; Heyns, M.M.; de Gendt, S. |
Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy |
2011 |
European physical journal : B : condensed matter and complex systems |
79 |
10 |
UA library record; WoS full record; WoS citing articles |
|
|
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Magnus, W.; Brosens, F.; Sorée, B. |
Modeling drive currents and leakage currents : a dynamic approach |
2009 |
Journal of computational electronics |
8 |
4 |
UA library record; WoS full record; WoS citing articles |
|
|
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Sorée, B.; Magnus, W.; Pourtois, G. |
Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode |
2008 |
Journal of computational electronics |
7 |
70 |
UA library record; WoS full record; WoS citing articles |
|
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Pourghaderi, M.A.; Magnus, W.; Sorée, B.; de Meyer, K.; Meuris, M.; Heyns, M. |
General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors |
2008 |
Journal of computational electronics |
7 |
3 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sorée, B.; Magnus, W. |
Quantized conductance without reservoirs : method of the nonequilibrium statistical operator |
2007 |
Journal of computational electronics |
6 |
|
UA library record; WoS full record |
|
|
|
Vandenberghe, W.; Sorée, B.; Magnus, W.; Fischetti, M.V. |
Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach |
2011 |
Journal of applied physics |
109 |
41 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Sorée, B.; Magnus, W.; Vandenberghe, W. |
Low-field mobility in ultrathin silicon nanowire junctionless transistors |
2011 |
Applied physics letters |
99 |
20 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pham, A.-T.; Zhao, Q.-T.; Jungemann, C.; Meinerzhagen, B.; Mantl, S.; Sorée, B.; Pourtois, G. |
Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs : CV characteristics, mobility, and ON current |
2011 |
Solid state electronics |
65-66 |
2 |
UA library record; WoS full record; WoS citing articles |
|
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Pourtois, G.; Lauwers, A.; Kittl, J.; Pantisano, L.; Sorée, B.; De Gendt, S.; Magnus, W.; Heyns, A.; Maex, K. |
First-principle calculations on gate/dielectric interfaces : on the origin of work function shifts |
2005 |
Microelectronic engineering |
80 |
31 |
UA library record; WoS full record; WoS citing articles |
|
|
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Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Direct and indirect band-to-band tunneling in germanium-based TFETs |
2012 |
IEEE transactions on electron devices |
59 |
212 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Kao, K.-H.; Verhulst, A.S.; Vandenberghe, W.G.; Sorée, B.; Groeseneken, G.; De Meyer, K. |
Modeling the impact of junction angles in tunnel field-effect transistors |
2012 |
Solid state electronics |
69 |
9 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Pham, A.-T.; Sorée, B.; Magnus, W.; Jungemann, C.; Meinerzhagen, B.; Pourtois, G. |
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations |
2012 |
Solid state electronics |
71 |
2 |
UA library record; WoS full record; WoS citing articles |
|
|
|
Vandenberghe, W.G.; Verhulst, A.S.; Kao, K.-H.; De Meyer, K.; Sorée, B.; Magnus, W.; Groeseneken, G. |
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors |
2012 |
Applied physics letters |
100 |
25 |
UA library record; WoS full record; WoS citing articles |
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