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  Author (up) Title Year Publication Volume Times cited Additional Links Links
Clima, S.; Sankaran, K.; Chen, Y.Y.; Fantini, A.; Celano, U.; Belmonte, A.; Zhang, L.; Goux, L.; Govoreanu, B.; Degraeve, R.; Wouters, D.J.; Jurczak, M.; Vandervorst, W.; Gendt, S.D.; Pourtois, G.; RRAMs based on anionic and cationic switching : a short overview 2014 Physica status solidi: rapid research letters 8 28 UA library record; WoS full record; WoS citing articles doi
Delabie, A.; Jayachandran, S.; Caymax, M.; Loo, R.; Maggen, J.; Pourtois, G.; Douhard, B.; Conard, T.; Meersschaut, J.; Lenka, H.; Vandervorst, W.; Heyns, M.; Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates 2013 ECS solid state letters 2 12 UA library record; WoS full record; WoS citing articles url doi
Dhayalan, S.K.; Kujala, J.; Slotte, J.; Pourtois, G.; Simoen, E.; Rosseel, E.; Hikavyy, A.; Shimura, Y.; Iacovo, S.; Stesmans, A.; Loo, R.; Vandervorst, W.; On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films 2016 Applied physics letters 108 9 UA library record; WoS full record; WoS citing articles url doi
Houssa, M.; van den Broek, B.; Scalise, E.; Ealet, B.; Pourtois, G.; Chiappe, D.; Cinquanta, E.; Grazianetti, C.; Fanciulli, M.; Molle, A.; Afanas’ev, V.V.; Stesmans, A.; Theoretical aspects of graphene-like group IV semiconductors 2014 Applied surface science 291 20 UA library record; WoS full record; WoS citing articles doi
Scalise, E.; Cinquanta, E.; Houssa, M.; van den Broek, B.; Chiappe, D.; Grazianetti, C.; Pourtois, G.; Ealet, B.; Molle, A.; Fanciulli, M.; Afanas’ev, V.V.; Stesmans, A.; Vibrational properties of epitaxial silicene layers on (111) Ag 2014 Applied surface science 291 36 UA library record; WoS full record; WoS citing articles doi
Xu, X.; Vereecke, G.; Chen, C.; Pourtois, G.; Armini, S.; Verellen, N.; Tsai, W.K.; Kim, D.W.; Lee, E.; Lin, C.Y.; Van Dorpe, P.; Struyf, H.; Holsteyns, F.; Moshchalkov, V.; Indekeu, J.; De Gendt, S.; Capturing wetting states in nanopatterned silicon 2014 ACS nano 8 39 UA library record; WoS full record; WoS citing articles doi
Adelmann, C.; Sankaran, K.; Dutta, S.; Gupta, A.; Kundu, S.; Jamieson, G.; Moors, K.; Pinna, N.; Ciofi, I.; Van Elshocht, S.; Bommels, J.; Boccardi, G.; Wilson, C.J.; Pourtois, G.; Tokei, Z. Alternative Metals: from ab initio Screening to Calibrated Narrow Line Models 2018 Proceedings of the IEEE ... International Interconnect Technology Conference T2 – IEEE International Interconnect Technology Conference (IITC), JUN 04-07, 2018, Santa Clara, CA UA library record; WoS full record; WoS citing articles pdf doi
Adelmann, C.; Wen, L.G.; Peter, A.P.; Pourtois, G.; et al. Alternative metals for advanced interconnects 2014 2014 Ieee International Interconnect Technology Conference / Advanced Metallization Conference (iitc/amc) UA library record; WoS full record;
Chen, Y.Y.; Pourtois, G.; Adelmann, C.; Goux, L.; Govoreanu, B.; Degreave, R.; Jurczak, M.; Kittl, J.A.; Groeseneken, G.; Wouters, D.J. Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device 2012 Applied physics letters 100 29 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Belmonte, A.; Degraeve, R.; Fantini, A.; Goux, L.; Govoreanu, B.; Jurczak, M.; Ota, K.; Redolfi, A.; Kar, G.S.; Pourtois, G. Kinetic and thermodynamic heterogeneity : an intrinsic source of variability in Cu-based RRAM memories 2017 Journal of computational electronics 16 2 UA library record; WoS full record; WoS citing articles pdf doi
Clima, S.; Chen, Y.Y.; Chen, C.Y.; Goux, L.; Govoreanu, B.; Degraeve, R.; Fantini, A.; Jurczak, M.; Pourtois, G. First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device 2016 Journal of applied physics 119 17 UA library record; WoS full record; WoS citing articles url doi
Clima, S.; Chen, Y.Y.; Degraeve, R.; Mees, M.; Sankaran, K.; Govoreanu, B.; Jurczak, M.; De Gendt, S.; Pourtois, G. First-principles simulation of oxygen diffusion in HfOx : role in the resistive switching mechanism 2012 Applied physics letters 100 63 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Chen, Y.Y.; Fantini, A.; Goux, L.; Degraeve, R.; Govoreanu, B.; Pourtois, G.; Jurczak, M. Intrinsic tailing of resistive states distributions in amorphous <tex>HfOx </tex> and TaOx based resistive random access memories 2015 IEEE electron device letters 36 33 UA library record; WoS full record; WoS citing articles doi
Clima, S.; Garbin, D.; Devulder, W.; Keukelier, J.; Opsomer, K.; Goux, L.; Kar, G.S.; Pourtois, G. Material relaxation in chalcogenide OTS SELECTOR materials 2019 Microelectronic engineering 215 1 UA library record; WoS full record; WoS citing articles pdf doi
Clima, S.; Garbin, D.; Opsomer, K.; Avasarala, N.S.; Devulder, W.; Shlyakhov, I.; Keukelier, J.; Donadio, G.L.; Witters, T.; Kundu, S.; Govoreanu, B.; Goux, L.; Detavernier, C.; Afanas'ev, V.; Kar, G.S.; Pourtois, G. Ovonic threshold-switching GexSey chalcogenide materials : stoichiometry, trap nature, and material relaxation from first principles 2020 Physica Status Solidi-Rapid Research Letters 3 UA library record; WoS full record; WoS citing articles pdf doi
Clima, S.; Govoreanu, B.; Jurczak, M.; Pourtois, G. HfOx as RRAM material : first principles insights on the working principles 2014 Microelectronic engineering 120 22 UA library record; WoS full record; WoS citing articles pdf doi
Clima, S.; Kaczer, B.; Govoreanu, B.; Popovici, M.; Swerts, J.; Verhulst, A.S.; Jurczak, M.; De Gendt, S.; Pourtois, G. Determination of ultimate leakage through rutile TiO2 and tetragonal ZrO2 from ab initio complex band calculations 2013 IEEE electron device letters 34 3 UA library record; WoS full record; WoS citing articles doi
Clima, S.; McMitchell, S.R.C.; Florent, K.; Nyns, L.; Popovici, M.; Ronchi, N.; Di Piazza, L.; Van Houdt, J.; Pourtois, G. First-principles perspective on poling mechanisms and ferroelectric/antiferroelectric behavior of Hf1-xZrxO2 for FEFET applications 2018 2018 Ieee International Electron Devices Meeting (iedm) UA library record; WoS full record; WoS citing articles pdf
Clima, S.; O'Sullivan, B.J.; Ronchi, N.; Bardon, M.G.; Banerjee, K.; Van den Bosch, G.; Pourtois, G.; van Houdt, J. Ferroelectric switching in FEFET : physics of the atomic mechanism and switching dynamics in HfZrOx, HfO2 with oxygen vacancies and Si dopants 2020 UA library record; WoS full record; WoS citing articles pdf doi
Clima, S.; Wouters, D.J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2 : a first principles insight 2014 Applied physics letters 104 79 UA library record; WoS full record; WoS citing articles doi
Compemolle, S.; Pourtois, G.; Sorée, B.; Magnus, W.; Chibotaru, L.F.; Ceulemans, A. Conductance of a copper-nanotube bundle interface: impact of interface geometry and wave-function interference 2008 Physical review : B : condensed matter and materials physics 77 8 UA library record; WoS full record; WoS citing articles doi
Cornil, D.; Li, H.; Wood, C.; Pourtois, G.; Bredas, J.-L.; Cornil, J. Work-function modification of Au and Ag surfaces upon deposition of self-assembled monolayers : influence of the choice of the theoretical approach and the thiol decomposition scheme 2013 ChemPhysChem : a European journal of chemical physics and physical chemistry 14 9 UA library record; WoS full record; WoS citing articles doi
Dabral, A.; Lu, A.K.A.; Chiappe, D.; Houssa, M.; Pourtois, G. A systematic study of various 2D materials in the light of defect formation and oxidation 2019 Physical chemistry, chemical physics 21 1 UA library record; WoS full record; WoS citing articles pdf doi
Dabral, A.; Pourtois, G.; Sankaran, K.; Magnus, W.; Yu, H.; de de Meux, A.J.; Lu, A.K.A.; Clima, S.; Stokbro, K.; Schaekers, M.; Collaert, N.; Horiguchi, N.; Houssa, M. Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations 2018 ECS journal of solid state science and technology 7 2 UA library record; WoS full record; WoS citing articles doi
De Clercq, M.; Moors, K.; Sankaran, K.; Pourtois, G.; Dutta, S.; Adelmann, C.; Magnus, W.; Sorée, B. Resistivity scaling model for metals with conduction band anisotropy 2018 Physical review materials 2 UA library record; WoS full record; WoS citing articles url doi
de de Meux, A.J.; Bhoolokam, A.; Pourtois, G.; Genoe, J.; Heremans, P. Oxygen vacancies effects in a-IGZO : formation mechanisms, hysteresis, and negative bias stress effects 2017 Physica status solidi : A : applications and materials science 214 8 UA library record; WoS full record; WoS citing articles pdf doi
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor : structure, tail states and strain effects 2015 Journal of physics: D: applied physics 48 23 UA library record; WoS full record; WoS citing articles pdf doi
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor 2017 Journal of physics : condensed matter 29 5 UA library record; WoS full record; WoS citing articles pdf doi
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Method to quantify the delocalization of electronic states in amorphous semiconductors and its application to assessing charge carrier mobility of p-type amorphous oxide semiconductors 2018 Physical review B 97 2 UA library record; WoS full record; WoS citing articles url doi
de de Meux, A.J.; Pourtois, G.; Genoe, J.; Heremans, P. Defects in amorphous semiconductors : the case of amorphous indium gallium zinc oxide 2018 Physical review applied 9 7 UA library record; WoS full record; WoS citing articles url doi
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