|
“Wavevector filtering through single-layer and bilayer graphene with magnetic barrier structures”. Masir MR, Vasilopoulos P, Peeters FM, Applied physics letters 93, 242103 (2008). http://doi.org/10.1063/1.3049600
Abstract: We show that the angular range of the transmission through magnetic barrier structures can be efficiently controlled in single-layer and bilayer graphenes and this renders the structures efficient wavevector filters. As the number of magnetic barriers increases, this range shrinks, the gaps in the transmission versus energy become wider, and the conductance oscillates with the Fermi energy.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 91
DOI: 10.1063/1.3049600
|
|
|
“Electronic, vibrational, elastic, and piezoelectric properties of monolayer Janus MoSTe phases: A first-principles study”. Yagmurcukardes M, Sevik C, Peeters FM, Physical review B 100, 045415 (2019). http://doi.org/10.1103/PHYSREVB.100.045415
Abstract: By performing density functional theory based first-principles calculations, the electronic, vibrational, elastic, and piezoelectric properties of two dynamically stable crystal phases of monolayer Janus MoSTe, namely 1H-MoSTe and 1T'-MoSTe, are investigated. Vibrational frequency analysis reveals that the other possible crystal structure, 1T-MoSTe, of this Janus monolayer does not exhibit dynamical stability. The 1H-MoSTe phase is found to be an indirect band-gap semiconductor while 1T'-MoSTe is predicted as small-gap semiconductor. Notably, in contrast to the direct band-gap nature of monolayers 1H-MoS2 and 1H-MoTe2, 1H-MoSTe is found to be an indirect gap semiconductor driven by the induced surface strains on each side of the structure. The calculated Raman spectrum of each structure shows unique character enabling us to clearly distinguish the stable crystal phases via Raman measurements. The systematic piezoelectric stress and strain coefficient analysis reveals that out-of-plane piezoelectricity appears in 1H-MoSTe and the noncentral symmetric 1T'-MoSTe has large piezoelectric coefficients. Static total-energy calculations show clearly that the formation of 1T'-MoSTe is feasible by using 1T'-MoTe2 as a basis monolayer. Therefore, we propose that the Janus MoSTe structure can be fabricated in two dynamically stable phases which possess unique electronic, dynamical, and piezoelectric properties.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 91
DOI: 10.1103/PHYSREVB.100.045415
|
|
|
“Graphene nanoribbons subjected to axial stress”. Neek-Amal M, Peeters FM, Physical review : B : condensed matter and materials physics 82, 085432 (2010). http://doi.org/10.1103/PhysRevB.82.085432
Abstract: Atomistic simulations are used to study the bending of rectangular graphene nanoribbons subjected to axial stress both for free boundary and supported boundary conditions. The shapes of the deformations of the buckled graphene nanoribbons, for small values of the stress, are sine waves where the number of nodal lines depend on the longitudinal size of the system and the applied boundary condition. The buckling strain for the supported boundary condition is found to be independent of the longitudinal size and estimated to be 0.86%. From a calculation of the free energy at finite temperature we find that the equilibrium projected two-dimensional area of the graphene nanoribbon is less than the area of a flat sheet. At the optimum length the boundary strain for the supported boundary condition is 0.48%.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 92
DOI: 10.1103/PhysRevB.82.085432
|
|
|
“Quantum states in a magnetic anti-dot”. Reijniers J, Peeters FM, Matulis A, Physical review : B : condensed matter and materials physics 59, 2817 (1999). http://doi.org/10.1103/PhysRevB.59.2817
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Engineering Management (ENM)
Impact Factor: 3.836
Times cited: 92
DOI: 10.1103/PhysRevB.59.2817
|
|
|
“Dirac electrons in a Kronig-Penney potential: dispersion relation and transmission periodic in the strength of the barriers”. Barbier M, Vasilopoulos P, Peeters FM, Physical review : B : solid state 80, 205415 (2009). http://doi.org/10.1103/PhysRevB.80.205415
Abstract: The transmission T and conductance G through one or multiple one-dimensional, ä-function barriers of two-dimensional fermions with a linear energy spectrum are studied. T and G are periodic functions of the strength P of the ä-function barrier V(x,y)/ℏvF=Pä(x). The dispersion relation of a Kronig-Penney (KP) model of a superlattice is also a periodic function of P and causes collimation of an incident electron beam for P=2ðn and n integer. For a KP superlattice with alternating sign of the height of the barriers the Dirac point becomes a Dirac line for P=(n+1/2)ð.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 93
DOI: 10.1103/PhysRevB.80.205415
|
|
|
“Stone-Wales defects in silicene : formation, stability, and reactivity of defect sites”. Sahin H, Sivek J, Li S, Partoens B, Peeters FM, Physical review : B : condensed matter and materials physics 88, 045434 (2013). http://doi.org/10.1103/PhysRevB.88.045434
Abstract: During the synthesis of ultrathin materials with hexagonal lattice structure Stone-Wales (SW) type of defects are quite likely to be formed and the existence of such topological defects in the graphenelike structures results in dramatic changes of their electronic and mechanical properties. Here we investigate the formation and reactivity of such SW defects in silicene. We report the energy barrier for the formation of SW defects in freestanding (similar to 2.4 eV) and Ag(111)-supported (similar to 2.8 eV) silicene and found it to be significantly lower than in graphene (similar to 9.2 eV). Moreover, the buckled nature of silicene provides a large energy barrier for the healing of the SW defect and therefore defective silicene is stable even at high temperatures. Silicene with SW defects is semiconducting with a direct band gap of 0.02 eV and this value depends on the concentration of defects. Furthermore, nitrogen substitution in SW-defected silicene shows that the defect lattice sites are the least preferable substitution locations for the N atoms. Our findings show the easy formation of SW defects in silicene and also provide a guideline for band gap engineering in silicene-based materials through such defects.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 93
DOI: 10.1103/PhysRevB.88.045434
|
|
|
“Realization of a tunable artificial atom at a supercritically charged vacancy in graphene”. Mao J, Jiang Y, Moldovan D, Li G, Watanabe K, Taniguchi T, Masir MR, Peeters FM, Andrei EY, Nature physics 12, 545 (2016). http://doi.org/10.1038/nphys3665
Abstract: Graphene’s remarkable electronic properties have fuelled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor graphene’s electronic properties and to control its charge carriers. Here we show that a single-atom vacancy in graphene can stably host a local charge and that this charge can be gradually built up by applying voltage pulses with the tip of a scanning tunnelling microscope. The response of the conduction electrons in graphene to the local charge is monitored with scanning tunnelling and Landau level spectroscopy, and compared to numerical simulations. As the charge is increased, its interaction with the conduction electrons undergoes a transition into a supercritical regime where itinerant electrons are trapped in a sequence of quasi-bound states which resemble an artificial atom. The quasi-bound electron states are detected by a strong enhancement of the density of states within a disc centred on the vacancy site which is surrounded by halo of hole states. We further show that the quasi-bound states at the vacancy site are gate tunable and that the trapping mechanism can be turned on and off, providing a mechanism to control and guide electrons in graphene.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 22.806
Times cited: 93
DOI: 10.1038/nphys3665
|
|
|
“Formation and segregation energies of B and P doped and BP codoped silicon nanowires”. Peelaers H, Partoens B, Peeters FM, Nano letters 6, 2781 (2006). http://doi.org/10.1021/nl061811p
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 12.712
Times cited: 94
DOI: 10.1021/nl061811p
|
|
|
“Vortex shells in mesoscopic superconducting disks”. Baelus BJ, Cabral LRE, Peeters FM, Physical review : B : condensed matter and materials physics 69, 064506 (2004). http://doi.org/10.1103/PhysRevB.69.064506
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 94
DOI: 10.1103/PhysRevB.69.064506
|
|
|
“Size-dependent enhancement of superconductivity in Al and Sn nanowires: shape-resonance effect”. Shanenko AA, Croitoru MD, Zgirski M, Peeters FM, Arutyunov K, Physical review : B : condensed matter and materials physics 74, 052502 (2006). http://doi.org/10.1103/PhysRevB.74.052502
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Electron microscopy for materials research (EMAT)
Impact Factor: 3.836
Times cited: 95
DOI: 10.1103/PhysRevB.74.052502
|
|
|
“Wave-packet dynamics and valley filter in strained graphene”. Chaves A, Covaci L, Rakhimov KY, Farias GA, Peeters FM, Physical review : B : condensed matter and materials physics 82, 205430 (2010). http://doi.org/10.1103/PhysRevB.82.205430
Abstract: The time evolution of a wave packet in strained graphene is studied within the tight-binding model and continuum model. The effect of an external magnetic field, as well as a strain-induced pseudomagnetic field, on the wave-packet trajectories and zitterbewegung are analyzed. Combining the effects of strain with those of an external magnetic field produces an effective magnetic field which is large in one of the Dirac cones, but can be practically zero in the other. We construct an efficient valley filter, where for a propagating incoming wave packet consisting of momenta around the K and K' Dirac points, the outgoing wave packet exhibits momenta in only one of these Dirac points while the components of the packet that belong to the other Dirac point are reflected due to the Lorentz force. We also found that the zitterbewegung is permanent in time in the presence of either external or strain-induced magnetic fields, but when both the external and strain-induced magnetic fields are present, the zitterbewegung is transient in one of the Dirac cones, whereas in the other cone the wave packet exhibits permanent spatial oscillations.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 95
DOI: 10.1103/PhysRevB.82.205430
|
|
|
“Structural transitions in monolayer MOS2 by lithium adsorption”. Esfahani, Leenaerts O, Sahin H, Partoens B, Peeters FM, The journal of physical chemistry: C : nanomaterials and interfaces 119, 10602 (2015). http://doi.org/10.1021/jp510083w
Abstract: Based on first-principles calculations, we study the structural stability of the H and T phases of monolayer MoS2 upon Li doping. Our calculations demonstrate that it is possible to stabilize a distorted T phase of MoS2 over the H phase through adsorption of Li atoms on the MoS2 surface. Through molecular dynamics and phonon calculations, we show that the T phase of MoS2 is dynamically unstable and undergoes considerable distortions. The type of distortion depends on the concentration of adsorbed Li atoms and changes from zigzag-like to diamond-like when increasing the Li doping. There exists a substantial energy barrier to transform the stable H phase to the distorted T phases, which is considerably reduced by increasing the concentration of Li atoms. We show that it is necessary that the Li atoms adsorb on both sides of the MoS2 monolayer to reduce the barrier sufficiently. Two processes are examined that allow for such two-sided adsorption, namely, penetration through the MoS2 layer and diffusion over the MoS2 surface. We show that while there is only a small barrier of 0.24 eV for surface diffusion, the amount of energy needed to pass through a pure MoS2 layer is of the order of similar or equal to 2 eV. However, when the MoS2 layer is covered with Li atoms the amount of energy that Li atoms should gain to penetrate the layer is drastically reduced and penetration becomes feasible.
Keywords: A1 Journal article; Engineering sciences. Technology; Condensed Matter Theory (CMT)
Impact Factor: 4.536
Times cited: 96
DOI: 10.1021/jp510083w
|
|
|
“Vortex configurations and critical parameters in superconducting thin films containing antidot arrays: nonlinear Ginzburg-Landau theory”. Berdiyorov GR, Milošević, MV, Peeters FM, Physical review : B : condensed matter and materials physics 74, Artn 174512 (2006). http://doi.org/10.1103/PhysRevB.74.174512
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 97
DOI: 10.1103/PhysRevB.74.174512
|
|
|
“Hexagonal A1N : dimensional-crossover-driven band-gap transition”. Bacaksiz C, Sahin H, Ozaydin HD, Horzum S, Senger RT, Peeters FM, Physical review : B : condensed matter and materials physics 91, 085430 (2015). http://doi.org/10.1103/PhysRevB.91.085430
Abstract: Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas et al., Appl. Phys. Lett. 103, 251605 (2013)], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm(-1) and an E-g mode at 703 cm(-1), which are observable by Raman measurements. In addition, single-layer h-AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA'-type stacking is found to be the most favorable one, and interlayer interaction is strong. While N-layered h-AlN is an indirect-band-gap semiconductor for N = 1 – 9, we predict that thicker structures (N >= 10) have a direct band gap at the Gamma point. The number-of-layer-dependent band-gap transitions in h-AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 99
DOI: 10.1103/PhysRevB.91.085430
|
|
|
“Molecule-type phases and Hund's rule in vertically coupled quantum dots”. Partoens B, Peeters FM, Physical review letters 84, 4433 (2000). http://doi.org/10.1103/PhysRevLett.84.4433
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 99
DOI: 10.1103/PhysRevLett.84.4433
|
|
|
“Magnetic field dependence of the energy of negatively charged excitons in semiconductor quantum wells”. Riva C, Peeters FM, Varga K, Physical review : B : condensed matter and materials physics 63, 115302 (2001). http://doi.org/10.1103/PhysRevB.63.115302
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 100
DOI: 10.1103/PhysRevB.63.115302
|
|
|
“Electron optical-phonon coupling in GaAs/AlxGa1-xAs quantum wells due to interface, slab and half-space modes”. Hai GQ, Peeters FM, Devreese JT, Physical review : B : condensed matter and materials physics 48, 4666 (1993). http://doi.org/10.1103/PhysRevB.48.4666
Keywords: A1 Journal article; Condensed Matter Theory (CMT); Theory of quantum systems and complex systems
Impact Factor: 3.736
Times cited: 102
DOI: 10.1103/PhysRevB.48.4666
|
|
|
“Rearrangement of the vortex lattice due to instabilities of vortex flow”. Vodolazov DY, Peeters FM, Physical review : B : condensed matter and materials physics 76, 014521 (2007). http://doi.org/10.1103/PhysRevB.76.014521
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 103
DOI: 10.1103/PhysRevB.76.014521
|
|
|
“Flux penetration and expulsion in thin superconducting disks”. Schweigert VA, Peeters FM, Physical review letters 83, 2409 (1999). http://doi.org/10.1103/PhysRevLett.83.2409
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 104
DOI: 10.1103/PhysRevLett.83.2409
|
|
|
“Realization of a p-n junction in a single layer boron-phosphide”. Çakir D, Kecik D, Sahin H, Durgun E, Peeters FM, Physical chemistry, chemical physics 17, 13013 (2015). http://doi.org/10.1039/c5cp00414d
Abstract: Two-dimensional (2D) materials have attracted growing interest due to their potential use in the next generation of nanoelectronic and optoelectronic applications. On the basis of first-principles calculations based on density functional theory, we first investigate the electronic and mechanical properties of single layer boron phosphide (h-BP). Our calculations show that h-BP is a mechanically stable 2D material with a direct band gap of 0.9 eV at the K-point, promising for both electronic and optoelectronic applications. We next investigate the electron transport properties of a p-n junction constructed from single layer boron phosphide (h-BP) using the non-equilibrium Green's function formalism. The n-and p-type doping of BP are achieved by substitutional doping of B with C and P with Si, respectively. C(Si) substitutional doping creates donor (acceptor) states close to the conduction (valence) band edge of BP, which are essential to construct an efficient p-n junction. By modifying the structure and doping concentration, it is possible to tune the electronic and transport properties of the p-n junction which exhibits not only diode characteristics with a large current rectification but also negative differential resistance (NDR). The degree of NDR can be easily tuned via device engineering.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.123
Times cited: 104
DOI: 10.1039/c5cp00414d
|
|
|
“Spin filtering in a magnetic-potential barrier structures: erratum”. Papp G, Peeters FM, Applied physics letters 79, 3198 (2001). http://doi.org/10.1063/1.1415371
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.411
Times cited: 104
DOI: 10.1063/1.1415371
|
|
|
“Vortex-antivortex lattices in superconducting films with magnetic pinning arrays”. Milošević, MV, Peeters FM, Physical review letters 93, 267006 (2004). http://doi.org/10.1103/PhysRevLett.93.267006
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 8.462
Times cited: 105
DOI: 10.1103/PhysRevLett.93.267006
|
|
|
“Direct Coulomb and phonon-mediated coupling between spatially separated electron gases”. Tso HC, Vasilopoulos P, Peeters FM, Physical review letters 68, 2516 (1992). http://doi.org/10.1103/PhysRevLett.68.2516
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 7.512
Times cited: 106
DOI: 10.1103/PhysRevLett.68.2516
|
|
|
“Electric-field control of the band gap and Fermi energy in graphene multilayers by top and back gates”. Avetisyan AA, Partoens B, Peeters FM, Physical review : B : solid state 80, 195401 (2009). http://doi.org/10.1103/PhysRevB.80.195401
Abstract: It is known that a perpendicular electric field applied to multilayers of graphene modifies the electronic structure near the K point and may induce an energy gap in the electronic spectrum which is tunable by the gate voltage. Here we consider a system of graphene multilayers in the presence of a positively charged top and a negatively charged back gate to control independently the density of electrons on the graphene layers and the Fermi energy of the system. The band structure of three- and four-layer graphene systems in the presence of the top and back gates is obtained using a tight-binding approach. A self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We predict that for opposite and equal charges on the top and bottom layers an energy gap is opened at the Fermi level. For an even number of layers this gap is larger than in the case of an odd number of graphene layers. We find that the circular asymmetry of the spectrum, which is a consequence of the trigonal warping, changes the size of the induced electronic gap, even when the total density of the induced electrons on the graphene layers is low.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.80.195401
|
|
|
“Electric field tuning of the band gap in graphene multilayers”. Avetisyan AA, Partoens B, Peeters FM, Physical review : B : solid state 79, 035421 (2009). http://doi.org/10.1103/PhysRevB.79.035421
Abstract: A perpendicular electric field applied to multilayers of graphene modifies the electronic structure near the K point and may induce an energy gap in the electronic spectrum. This gap is tunable by the gate voltage and its size depends on the number of layers. We use a tight-binding approach to calculate the band structure and include a self-consistent calculation in order to obtain the density of charge carriers. Results are presented for systems consisting of three and four layers of graphene. The effect of the circular asymmetry of the band structure on the gap is critically examined.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 106
DOI: 10.1103/PhysRevB.79.035421
|
|
|
“Quantum properties and applications of 2D Janus crystals and their superlattices”. Yagmurcukardes M, Qin Y, Ozen S, Sayyad M, Peeters FM, Tongay S, Sahin H, Applied Physics Reviews 7, 011311 (2020). http://doi.org/10.1063/1.5135306
Abstract: Two-dimensional (2D) Janus materials are a new class of materials with unique physical, chemical, and quantum properties. The name “Janus” originates from the ancient Roman god which has two faces, one looking to the future while the other facing the past. Janus has been used to describe special types of materials which have two faces at the nanoscale. This unique atomic arrangement has been shown to present rather exotic properties with applications in biology, chemistry, energy conversion, and quantum sciences. This review article aims to offer a comprehensive review of the emergent quantum properties of Janus materials. The review starts by introducing 0D Janus nanoparticles and 1D Janus nanotubes, and highlights their difference from classical ones. The design principles, synthesis, and the properties of graphene-based and chalcogenide-based Janus layers are then discussed. A particular emphasis is given to colossal built-in potential in 2D Janus layers and resulting quantum phenomena such as Rashba splitting, skyrmionics, excitonics, and 2D magnetic ordering. More recent theoretical predictions are discussed in 2D Janus superlattices when Janus layers are stacked onto each other. Finally, we discuss the tunable quantum properties and newly predicted 2D Janus layers waiting to be experimentally realized. The review serves as a complete summary of the 2D Janus library and predicted quantum properties in 2D Janus layers and their superlattices.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 15
Times cited: 107
DOI: 10.1063/1.5135306
|
|
|
“Nanoindentation of a circular sheet of bilayer graphene”. Neek-Amal M, Peeters FM, Physical review : B : condensed matter and materials physics 81, 235421 (2010). http://doi.org/10.1103/PhysRevB.81.235421
Abstract: Nanoindentation of bilayer graphene is studied using molecular-dynamics simulations. We compared our simulation results with those from elasticity theory as based on the nonlinear Föppl-Hencky equations with rigid boundary condition. The force-deflection values of bilayer graphene are compared to those of monolayer graphene. Youngs modulus of bilayer graphene is estimated to be 0.8 TPa which is close to the value for graphite. Moreover, an almost flat bilayer membrane at low temperature under central load has a 14% smaller Youngs modulus as compared to the one at room temperature.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 108
DOI: 10.1103/PhysRevB.81.235421
|
|
|
“Mechanical properties of monolayer GaS and GaSe crystals”. Yagmurcukardes M, Senger RT, Peeters FM, Sahin H, Physical review B 94, 245407 (2016). http://doi.org/10.1103/PHYSREVB.94.245407
Abstract: The mechanical properties of monolayer GaS and GaSe crystals are investigated in terms of their elastic constants: in-plane stiffness (C), Poisson ratio (nu), and ultimate strength (sigma(U)) by means of first-principles calculations. The calculated elastic constants are compared with those of graphene and monolayer MoS2. Our results indicate that monolayer GaS is a stiffer material than monolayer GaSe crystals due to the more ionic character of the Ga-S bonds than the Ga-Se bonds. Although their Poisson ratio values are very close to each other, 0.26 and 0.25 for GaS and GaSe, respectively, monolayer GaS is a stronger material than monolayer GaSe due to its slightly higher sU value. However, GaS and GaSe crystals are found to be more ductile and flexible materials than graphene and MoS2. We have also analyzed the band-gap response of GaS and GaSe monolayers to biaxial tensile strain and predicted a semiconductor-metal crossover after 17% and 14% applied strain, respectively, for monolayer GaS and GaSe. In addition, we investigated how the mechanical properties are affected by charging. We found that the flexibility of single layer GaS and GaSe displays a sharp increase under 0.1e/cell charging due to the repulsive interactions between extra charges located on chalcogen atoms. These charging-controllable mechanical properties of single layers of GaS and GaSe can be of potential use for electromechanical applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 108
DOI: 10.1103/PHYSREVB.94.245407
|
|
|
“Electric field activated hydrogen dissociative adsorption to nitrogen-doped graphene”. Ao ZM, Peeters FM, The journal of physical chemistry: C : nanomaterials and interfaces 114, 14503 (2010). http://doi.org/10.1021/jp103835k
Abstract: Graphane, hydrogenated graphene, was very recently synthesized and predicted to have great potential applications. In this work, we propose a new promising approach for hydrogenation of graphene based on density functional theory (DFT) calculations through the application of a perpendicular electric field after substitutionally doping by nitrogen atoms. These DFT calculations show that the doping by nitrogen atoms into the graphene layer and applying an electrical field normal to the graphene surface induce dissociative adsorption of hydrogen. The dissociative adsorption energy barrier of an H2 molecule on a pristine graphene layer changes from 2.7 to 2.5 eV on N-doped graphene, and to 0.88 eV on N-doped graphene under an electric field of 0.005 au. When increasing the electric field above 0.01 au, the reaction barrier disappears. Therefore, N doping and applying an electric field have catalytic effects on the hydrogenation of graphene, which can be used for hydrogen storage purposes and nanoelectronic applications.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 4.536
Times cited: 110
DOI: 10.1021/jp103835k
|
|
|
“Spin-current modulation and square-wave transmission through periodically stubbed electron waveguides”. Wang XF, Vasilopoulos P, Peeters FM, Physical review : B : condensed matter and materials physics 65, 165217 (2002). http://doi.org/10.1103/PhysRevB.65.165217
Abstract: Ballistic spin transport through waveguides, with symmetric or asymmetric double stubs attached to them periodically, is studied systematically in the presence of a weak spin-orbit coupling that makes the electrons precess. By an appropriate choice of the waveguide length and of the stub parameters injected spin-polarized electrons can be blocked completely and the transmission shows a periodic and nearly-square-type behavior, with values 1 and 0, with wide gaps when only one mode is allowed to propagate in the waveguide. A similar behavior is possible for a certain range of the stub parameters even when two modes can propagate in the waveguide and the conductance is doubled. Such a structure is a good candidate for establishing a realistic spin transistor. A further modulation of the spin current can be achieved by inserting defects in a finite-number stub superlattice. Finite-temperature effects on the spin conductance are also considered.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 3.836
Times cited: 112
DOI: 10.1103/PhysRevB.65.165217
|
|